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    • 3. 发明授权
    • Multilayer photoreceptor
    • 多层感光体
    • US4859554A
    • 1989-08-22
    • US175583
    • 1988-03-28
    • Toshinori YamazakiEiichi SakaiTatsuo NakanishiHiroyuki Nomori
    • Toshinori YamazakiEiichi SakaiTatsuo NakanishiHiroyuki Nomori
    • G03G5/082
    • G03G5/08235
    • Disclosed is a photoreceptor which comprises a charge generation layer composed of at least one compound selected from the group consisting of amorphous hydrogenated silicon, amorphous fluorinated silicon and amorphous hydrofluorinated silicon, a charge transport layer formed on a lower surface of said charge generation layer and composed of at least one compound selected from the group consisting of amorphous hydrogenated silicon nitride, amorphous fluorinated silicon nitride, amorphous hydrofluorinated silicon nitride, amorphous hydrogenated silicon carbide, amorphous fluorinated silicon carbide and amorphous hydrofluorinated silicon carbide, and a substrate, wherein said charge transport layer contains oxygen within the range of from 50 atomic ppm to 5 atomic % based on the total atoms of silicon, nitrogen and carbon. The photoreceptor of this invention can be improved in the electrophotographic characteristics greatly with reduction of dependency on temperature by making the oxygen content in the charge transport layer 50 atomic ppm to 5 atomic %.
    • 公开了一种感光体,其包含由至少一种选自非晶氢化硅,无定形氟化硅和无定形氢氟硅的化合物组成的电荷产生层,形成在所述电荷产生层的下表面上的电荷输送层, 的非晶氢化氮化硅,无定形氟化氮化硅,无定形氢氟化氮化硅,无定形氢化碳化硅,无定形氟化碳化硅和无定形氢氟化碳化硅中的至少一种化合物和基板,其中所述电荷传输层 基于硅,氮和碳的总原子,氧含量在50原子%至5原子%的范围内。 通过使电荷输送层50中的氧含量为原子ppm为5原子%,本发明的感光体能够大大提高电子照相特性,同时降低对温度的依赖性。
    • 4. 发明授权
    • Amorphous silicon electrophotographic receptor having controlled carbon
and boron contents
    • 具有受控碳和硼含量的非晶硅电子照相受体
    • US4794064A
    • 1988-12-27
    • US11375
    • 1987-02-05
    • Toshinori YamazakiTatsuo NakanishiHiroyuki Nomori
    • Toshinori YamazakiTatsuo NakanishiHiroyuki Nomori
    • G03G5/082G03G5/085
    • G03G5/08235
    • An electrophotographic photoreceptor comprising a photosensitive layer comprisingat least one compound selected from the group consisting of hydrogenated amorphous silicon, fluorinated amorphous silicon,a surface modifying layer formed on the upper surface of said photosensitive layer comprising at least one compound selected from the group consisting of hydrogenated amorphous silicon carbide, fluorinated amorphous silicon carbide, hydrogenated and fluorinated amorphous silicon carbide, hydrogenated amorphous silicon nitride, fluorinated amorphous silicon nitride, and hydrogenated and fluorinated silicon nitride,a charge transport layer formed on the lower surface of said photosensitive layer comprising at least one compound selected from the group consisting of hydrogenated amorphous silicon carbide, fluorinated amorphous silicon carbide, and hydrogenated and fluorinated amorphous silicon carbide, the carbon content of said charge transport layer is within the range of 5 to 30 atomic % and said charge transport layer is doped with at least one element from group III of the periodic table,a charge blocking layer formed on the lower surface of said charge transport layer comprising at least one compound selected from the group consisting of hydrogenated amorphous silicon carbide, fluorinated amorphous silicon carbide, and hydrogenated and fluorinated amorphous silicon carbide, doped with larger amount of at least one element from group III of the periodic table than the amount of group III element dope in said charge transport layer, anda substrate.
    • 一种电子照相感光体,包括含有至少一种选自氢化非晶硅,氟化非晶硅的化合物的光敏层,在所述感光层的上表面上形成的表面改性层,所述表面改性层包含至少一种选自以下的化合物: 氢化非晶碳化硅,氟化非晶碳化硅,氢化和氟化非晶碳化硅,氢化非晶氮化硅,氟化非晶氮化硅和氢化和氟化氮化硅,形成在所述感光层的下表面上的电荷传输层,至少包括 选自氢化非晶碳化硅,氟化非晶碳化硅和氢化和氟化非晶碳化硅的一种化合物,所述电荷输送层的碳含量在5-30原子的范围内 ic%,并且所述电荷传输层掺杂有来自元素周期表的III族的至少一种元素,形成在所述电荷传输层的下表面上的电荷阻挡层包含至少一种选自氢化非晶硅 碳化物,氟化非晶碳化硅以及氢化和氟化的非晶碳化硅,以及基材中掺杂有更多量的元素周期表III族中的至少一种元素。