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1. 发明授权

US5478397A Heat treating device 失效
标题翻译：热处理装置
公开(公告)号：US5478397A
公开(公告)日：1995-12-26
申请号：US258066
申请日：1994-06-10
申请人： Toshimitsu Shibata , Toshiaki Miyaju , Naoya Kaneda
发明人： Toshimitsu Shibata , Toshiaki Miyaju , Naoya Kaneda
IPC分类号： H01L21/205 , C23C16/455 , H01L21/22 , C23C16/00
CPC分类号： C23C16/455
摘要： A heat treating device including a processing vessel for exposing objects to be treated (e.g., semiconductor wafers) held in a wafer boat for a heat treatment, processing gas introduction nozzles for introducing processing gases, a cap for openably closing tightly an opening of the processing vessel; a heat retention cylinder on which the boat is mounted; and a gas introduction opening, a gas passage, and a gas release opening opened in the heat retention cylinder. Processing gases introduced from the introduction nozzles are taken into the heat retention cylinder through the gas introduction opening and released radially from the gas release opening in the top thereof. The heat retention cylinder has the function of introducing the processing gases, whereby high intra-plane film thickness uniformity can be retained without rotating the wafer boat.
摘要翻译：一种热处理装置，包括：处理容器，用于将保持在晶片舟皿中的待处理物体（例如，半导体晶片）进行热处理，处理用于引入处理气体的气体引入喷嘴，用于可打开地闭合加工开口的盖船只; 其上安装有船的保温筒; 以及气体导入口，气体通路和在保温筒中开口的气体释放口。从引入喷嘴引入的处理气体通过气体导入口被吸入保温筒，并从其顶部的气体释放口径向释放。保温筒具有引入处理气体的功能，由此可以在不旋转晶片舟的情况下保持高的面内膜厚均匀性。

2. 发明授权

US5622639A Heat treating apparatus 失效
标题翻译：热处理设备
公开(公告)号：US5622639A
公开(公告)日：1997-04-22
申请号：US280855
申请日：1994-07-26
申请人： Hirofumi Kitayama , Toshimitu Shibata , Toshiaki Miyaju , Katsushin Miyagi
发明人： Hirofumi Kitayama , Toshimitu Shibata , Toshiaki Miyaju , Katsushin Miyagi
IPC分类号： C23C16/46 , C30B31/12 , F27B5/14
CPC分类号： C30B31/12 , C23C16/46
摘要： A heat treating apparatus for mounting objects to be treated on an object-to-be-treated boat (wafer boat) provided on a heat insulating cylinder, and loading the object-to-be-treated boat into a processing vessel for a heat treatment, a temperature detecting sensor is provided in a film depositing area of a relatively large heat capacity, which is a lower part of a gap defined between an inner tube of the processing vessel and an outer tube thereof so as to detect temperatures of those of the objects to be treated located there and control temperatures of the heating unit. Thus heat response is improved, and temperatures of the objects to be treated can be accurately detected.
摘要翻译：一种用于将被处理物体安装在设置在隔热圆筒上的被处理船舶（晶片舟皿）上并将待处理船舶装载到热处理处理容器中的热处理装置温度检测传感器设置在比较大的热容量的薄膜沉积区域中，该薄膜沉积区域是在处理容器的内管和外管之间限定的间隙的下部，以便检测其中的温度要处理的物体位于那里，并控制加热单元的温度。因此，热响应得到改善，并且可以准确地检测被处理物体的温度。

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