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1. 发明申请

US20050040482A1 EPIR device and semiconductor devices utilizing the same 失效
标题翻译： EPIR器件和利用其的半导体器件
公开(公告)号：US20050040482A1
公开(公告)日：2005-02-24
申请号：US10790238
申请日：2004-03-02
申请人： Toshimasa Suzuki , Yuji Nishi , Masayuki Fujimoto , Nobuyoshi Awaya , Kohji Inoue , Keizo Sakiyama
发明人： Toshimasa Suzuki , Yuji Nishi , Masayuki Fujimoto , Nobuyoshi Awaya , Kohji Inoue , Keizo Sakiyama
IPC分类号： H01F10/32 , G11C13/00 , H01F41/18 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10 , H01L43/12 , H01L45/00 , H01L27/108
CPC分类号： G11C13/0007 , B82Y10/00 , G11C2213/31 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625
摘要： There is provided an EPIR device which is excellent in mass productivity and high in practical utility. The EPIR device includes a lower electrode layer, a CMR thin film layer and an upper electrode layer which are laminated in this order on any of various substrates. A Pt polycrystal thin film 10 forming the lower electrode layer includes columnar Pt crystal grains 10A, 10B, 10C, . . . and over 90% of these crystal grains is oriented to a (1 1 1) face. Columnar PCMO crystal grain groups 20A, 20B, 20C, . . . are respectively locally grown epitaxially on the respective outermost surfaces of the Pt crystal grains 10A, 10B, 10C, Then, the crystal faces of the crystal grains included in the PCMO crystal grain groups 20A, 20B, 20C, . . . and vertical in the substrate surface normal direction are any one of (1 0 0)p, (1 1 0)p and (1 1 1)p planes.
摘要翻译：提供了具有优异的批量生产率和高实用性的EPIR装置。 EPIR器件包括下列电极层，CMR薄膜层和上电极层，它们以任何各种衬底依次层叠。形成下电极层的Pt多晶薄膜10包括柱状Pt晶粒10A，10B，10C。。。并且超过90％的这些晶粒取向为（111）面。柱状PCMO晶粒组20A，20B，20C。。。分别在Pt晶粒10A，10B，10C的各个最外表面上外延地局部生长。然后，包含在PCMO晶粒组20A，20B，20C中的晶粒的晶面。。。并且在衬底表面法线方向垂直是（110）p，（110）p和（111）p平面中的任何一个。

2. 发明授权

US07027322B2 EPIR device and semiconductor devices utilizing the same 失效
标题翻译： EPIR器件和利用其的半导体器件
公开(公告)号：US07027322B2
公开(公告)日：2006-04-11
申请号：US10790238
申请日：2004-03-02
申请人： Toshimasa Suzuki , Yuji Nishi , Masayuki Fujimoto , Nobuyoshi Awaya , Kohji Inoue , Keizo Sakiyama
发明人： Toshimasa Suzuki , Yuji Nishi , Masayuki Fujimoto , Nobuyoshi Awaya , Kohji Inoue , Keizo Sakiyama
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , B82Y10/00 , G11C2213/31 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625
摘要： There is provided an EPIR device which is excellent in mass productivity and high in practical utility.The EPIR device includes a lower electrode layer, a CMR thin film layer and an upper electrode layer which are laminated in this order on any of various substrates. A Pt polycrystal thin film 10 forming the lower electrode layer includes columnar Pt crystal grains 10A, 10B, 10C, . . . and over 90% of these crystal grains is oriented to a (1 1 1) face. Columnar PCMO crystal grain groups 20A, 20B, 20C, . . . are respectively locally grown epitaxially on the respective outermost surfaces of the Pt crystal grains 10A, 10B, 10C, . . . . Then, the crystal faces of the crystal grains included in the PCMO crystal grain groups 20A, 20B, 20C, . . . and vertical in the substrate surface normal direction are any one of (1 0 0)p, (1 1 0)p and (1 1 1)p planes.
摘要翻译：提供了具有优异的批量生产率和高实用性的EPIR装置。 EPIR器件包括下列电极层，CMR薄膜层和上电极层，它们以任何各种衬底依次层叠。形成下电极层的Pt多晶薄膜10包括柱状Pt晶粒10 A，10 B，10 C。。。并且超过90％的这些晶粒取向为（111）面。柱状PCMO晶粒组20 A，20 B，20 C，。。分别在Pt晶粒10 A，10 B，10 C的各自的最外表面上外延地局部生长。。。。然后，包含在PCMO晶粒组20A，20B，20C中的晶粒的晶面。。。并且在衬底表面法线方向上的垂直方向是（110）p1，（111）p1和（111）中的任何一个p < / SUB>飞机。

3. 发明授权

US06824898B2 Dielectric thin film, method for making the same and electric components thereof 失效
标题翻译：介电薄膜，其制造方法及其电气部件
公开(公告)号：US06824898B2
公开(公告)日：2004-11-30
申请号：US10459558
申请日：2003-06-12
申请人： Toshimasa Suzuki , Yoshiki Iwazaki , Kentaro Morito , Shoichi Sekiguchi , Masayuki Fujimoto
发明人： Toshimasa Suzuki , Yoshiki Iwazaki , Kentaro Morito , Shoichi Sekiguchi , Masayuki Fujimoto
IPC分类号： B32B900
CPC分类号： H01L21/02197 , C23C16/409 , C30B23/02 , C30B29/24 , C30B29/32 , H01L21/02293 , H01L21/28291 , H01L21/31604 , H01L21/31691 , H01L28/55 , H01L29/516
摘要： A lattice strain(s) due to lattice mismatch can be effectively utilized and it is further designed for the reduction of leakage current and the improvement of fatigue characteristic. Substantially one layer of {X3}O corresponding to one atomic layer of {X3}O is inserted at suitable intervals while epitaxially growing perovskite oxides or {X1}{X2}O3 layers 12 on a substrate which is similar in crystallographic structure to a desired thin film. {X1} and {X3} are each Ca or the like, {X2} is Ti or the like and ┌O┘ is oxygen. While the {X3}O layer(s) 14 is introduced so as to divide the perovskite structure of the {X1}{X2}O3 layers 12, it is present in a condition exhibiting an extremely high structural matching with the perovskite structure thereby forming a layered perovskite structure. The {X3}O layer(s) 14 functions as a blocking layer for the introduction of misfit(lattice mismatch) dislocations. As a result, a ferroelectric thin film maintaining high lattice strains is produced.
摘要翻译：可以有效地利用由于晶格失配引起的晶格应变，并且进一步设计用于减少漏电流和改善疲劳特性。在一个{X3} O的一层对应于{X3} O的一个原子层以合适的间隔插入，同时在与晶体学结构相似的衬底上外延生长钙钛矿氧化物或{X1} {X2} O3层12，使其成为所需的薄膜。 {X1}和{X3}各自为Ca等，{X2}为Ti等，O 0为氧。当引入{X3} O层14以分割{X1} {X2} O3层12的钙钛矿结构时，其呈现与钙钛矿结构具有极高结构匹配的状态，从而形成层状钙钛矿结构。 {X3} O层14用作引入失配（晶格失配）位错的阻挡层。结果，产生维持高晶格应变的铁电薄膜。

4. 发明授权

US06815796B2 Composite module and process of producing same 失效
标题翻译：复合模块及其生产工艺
公开(公告)号：US06815796B2
公开(公告)日：2004-11-09
申请号：US10313037
申请日：2002-12-06
申请人： Kenichi Ota , Manabu Satomi , Masayuki Fujimoto
发明人： Kenichi Ota , Manabu Satomi , Masayuki Fujimoto
IPC分类号： H01L2900
CPC分类号： H01L23/645 , H01L21/8252 , H01L23/50 , H01L23/5389 , H01L23/642 , H01L24/48 , H01L27/0605 , H01L27/0688 , H01L28/10 , H01L28/40 , H01L2224/05599 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/85424 , H01L2924/00014 , H01L2924/01019 , H01L2924/01068 , H01L2924/01078 , H01L2924/09701 , H01L2924/10329 , H01L2924/14 , H01L2924/1423 , H01L2924/15153 , H01L2924/15165 , H01L2924/19041 , H01L2924/30107 , H01L2924/3011 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： A composite module and its production process which allow multiple functions, miniaturization, low power consumption and low costs without requiring any external chip parts at all. A high-frequency integrated circuit is embedded in a silicon substrate, a high-frequency high-capacity bypass capacitor and a matching coil using thin films of different types of materials are also formed on the silicon substrate, a high-frequency high-capacity bypass capacitor is further formed with an interlayer insulation film between them, and these elements and the high-frequency integrated circuit are connected via a wiring layer.
摘要翻译：复合模块及其生产过程，可以实现多种功能，小型化，低功耗和低成本，而无需任何外部芯片部件。高频集成电路嵌入硅衬底中，高频大容量旁路电容器和使用不同类型材料的薄膜的匹配线圈也形成在硅衬底上，高频高容量旁路电容器还在其间形成有层间绝缘膜，并且这些元件和高频集成电路经由布线层连接。

5. 发明授权

US4405478A Dielectric ceramic materials with insulated boundaries between crystal grains, and process for preparation 失效
标题翻译：介电陶瓷材料与晶粒之间具有绝缘边界，以及制备工艺
公开(公告)号：US4405478A
公开(公告)日：1983-09-20
申请号：US443781
申请日：1982-11-22
申请人： Kiyoshi Murase , Nobutatsu Yamaoka , Masayuki Fujimoto
发明人： Kiyoshi Murase , Nobutatsu Yamaoka , Masayuki Fujimoto
IPC分类号： C04B35/47 , H01G4/12 , C04B35/46 , H01B3/12
CPC分类号： H01G4/1281 , C04B35/47
摘要： A dielectric ceramic material composed of primary and secondary ingredients forming in combination a polycrystalline ceramic proper, and of insulating substances diffused throughout the intergranular boundaries of the ceramic proper for an increase in apparent relative dielectric constant. The primary ingredients comprise, in relative proportions, 90.68-99.88 wt. % SrTiO.sub.3, 0.07-5.32 wt. % Nb.sub.2 O.sub.5, and 0.05-4.00 wt. % GeO.sub.2. The secondary ingredients comprise 0.02-0.10 wt. part SiO.sub.2 and 0.01-0.03 wt. part Al.sub.2 O.sub.3 with respect to 100 wt. parts of the primary ingredients, with the weight ratio of SiO.sub.2 to Al.sub.2 O.sub.3 being from 1.5 to 5.0. The insulating substances comprise 0.03-2.90 wt. % PbO, 0.11-4.34 wt. % Bi.sub.2 O.sub.3, and 0.001-0.18 wt. % B.sub.2 O.sub.3 with respect to the total weight of the primary and the secondary ingredients. In the fabrication of bodies of the ceramic the mixture of the insulating substances is coated or otherwise layered on polycrystalline ceramic bodies prepared from the primary and secondary ingredients. The coated ceramic bodies are then heated to cause diffusion of the insulating substances throughout their intergranular boundaries.
摘要翻译：由主要和次要成分组成的介电陶瓷材料，其组合形成多晶陶瓷本身，并且绝缘物质在陶瓷本身的整个晶界处扩散，以增加表观相对介电常数。主要成分以相对比例包含90.68-99.88wt。％SrTiO 3，0.07-5.32wt。％Nb2O5和0.05-4.00wt。％GeO2。次要成分包含0.02-0.10wt。部分SiO2和0.01-0.03wt。部分Al2O3相对于100wt。主要成分的一部分，SiO 2与Al 2 O 3的重量比为1.5-5.0。绝缘物质包含0.03-2.90重量％％PbO，0.11-4.34wt。％Bi 2 O 3和0.001-0.18wt。％B2O3相对于初级和次级成分的总重量。在陶瓷体的制造中，绝缘物质的混合物被涂覆或以其它方式分层在由初级和次级成分制备的多晶陶瓷体上。然后将涂覆的陶瓷体加热，使绝缘物质扩散到其晶间界面。

6. 发明授权

US4405474A Dielectric ceramic materials with insulated boundaries between crystal grains, and process for preparation 失效
标题翻译：介电陶瓷材料与晶粒之间具有绝缘边界，以及制备工艺
公开(公告)号：US4405474A
公开(公告)日：1983-09-20
申请号：US443775
申请日：1982-11-22
申请人： Kiyoshi Murase , Nobutatsu Yamaoka , Masayuki Fujimoto
发明人： Kiyoshi Murase , Nobutatsu Yamaoka , Masayuki Fujimoto
IPC分类号： H01B3/12 , C04B35/47 , H01G4/12 , C04B35/46
CPC分类号： H01G4/1281 , C04B35/47
摘要： A dielectric ceramic material composed of primary and secondary ingredients forming in combination a polycrystalline ceramic proper, and of insulating substances diffused throughout the intergranular boundaries of the ceramic proper for an increase in apparent relative dielectric constant. The primary ingredients comprise in relative proportions, 96.70-99.83 wt. % SrTiO.sub.3, 0.15-2.30 wt. % WO.sub.3, and 0.02-1.00 wt. % CuO. The secondary ingredients comprise 0.02-0.10 wt %. part SiO.sub.2 and 0.01-0.03 wt. part Al.sub.2 O.sub.3 with respect to 100 wt. parts of the primary ingredients, with the weight ratio of SiO.sub.2 to Al.sub.2 O.sub.3 being from 1.5 to 5.0. The insulating substances comprise 0.003-2.83 wt. % PbO, 0.10-4.30 wt. % Bi.sub.2 O.sub.3, and 0.001-0.18 wt. % B.sub.2 O.sub.3 with respect to the total weight of the primary and the secondary ingredients. In the fabrication of bodies of the ceramic the mixture of the insulating substances is coated or otherwise layered on polycrystalline ceramic bodies prepared from the primary and secondary ingredients. The coated ceramic bodies are then heated to cause diffusion of the insulating substances throughout their intergranular boundaries.
摘要翻译：由主要和次要成分组成的介电陶瓷材料，其组合形成多晶陶瓷本身，并且绝缘物质在陶瓷本身的整个晶界处扩散，以增加表观相对介电常数。主要成分包括相对比例为96.70-99.83wt。％SrTiO 3，0.15-2.30重量％％WO3和0.02-1.00wt。％CuO。次要成分占0.02-0.10重量％。部分SiO2和0.01-0.03wt。部分Al2O3相对于100wt。主要成分的一部分，SiO 2与Al 2 O 3的重量比为1.5-5.0。绝缘物质包含0.003-2.83wt。％PbO，0.10-4.30wt。％Bi 2 O 3和0.001-0.18wt。％B2O3相对于初级和次级成分的总重量。在陶瓷体的制造中，绝缘物质的混合物被涂覆或以其它方式分层在由初级和次级成分制备的多晶陶瓷体上。然后将涂覆的陶瓷体加热，使绝缘物质扩散到其晶间界面。

7. 发明授权

US4405472A Dielectric ceramic materials with insulated boundaries between crystal grains, and process for preparation 失效
标题翻译：介电陶瓷材料与晶粒之间具有绝缘边界，以及制备工艺
公开(公告)号：US4405472A
公开(公告)日：1983-09-20
申请号：US443773
申请日：1982-11-22
申请人： Kiyoshi Murase , Nobutatsu Yamaoka , Masayuki Fujimoto
发明人： Kiyoshi Murase , Nobutatsu Yamaoka , Masayuki Fujimoto
IPC分类号： H01B3/12 , C04B35/47 , H01G4/12 , C04B35/46
CPC分类号： C04B35/47 , H01G4/1281
摘要： A dielectric ceramic material composed of primary and secondary ingredients forming in combination a polycrystalline ceramic proper, and of insulating substances diffused throughout the intergranular boundaries of the ceramic proper for an increase in apparent relative dielectric constant. The primary ingredients comprise, in relative proportions, 95.18-99.65 wt. % SrTiO.sub.3, 0.33-3.32 wt. % Ta.sub.2 O.sub.5, and 0.02-1.50 wt. % CuO. The secondary ingredients comprise 0.02-0.10 wt. % part SiO.sub.2 and 0.01-0.03 wt. part Al.sub.2 O.sub.3 with respect to 100 wt. parts of the primary ingredients, with the weight ratio of SiO.sub.2 to Al.sub.2 O.sub.3 being from 1.50 to 5.0. The insulating substances comprise 0.03-2.75 wt. % PbO, 0.11-4.22 wt. % Bi.sub.2 O.sub.3, and 0.001-0.18 wt. % B.sub.2 O.sub.3 with respect to the total weight of the primary and the secondary ingredients. In the fabrication of bodies of the ceramic the mixture of the insulating substances is coated or otherwise layered on polycrystalline ceramic bodies prepared from the primary and secondary ingredients. The coated ceramic bodies are then heated to cause diffusion of the insulating substances throughout their intergranular boundaries.
摘要翻译：由主要和次要成分组成的介电陶瓷材料，其组合形成多晶陶瓷本身，并且绝缘物质在陶瓷本身的整个晶界处扩散，以增加表观相对介电常数。主要成分以相对比例包含95.18-99.65wt。％SrTiO3，0.33-3.32wt。％Ta2O5和0.02-1.50wt。％CuO。次要成分包含0.02-0.10wt。％部分SiO 2和0.01-0.03重量％部分Al2O3相对于100wt。主要成分的一部分，SiO 2与Al 2 O 3的重量比为1.50〜5.0。绝缘物质包含0.03-2.75重量％％PbO，0.11-4.22wt。％Bi 2 O 3和0.001-0.18wt。％B2O3相对于初级和次级成分的总重量。在陶瓷体的制造中，绝缘物质的混合物被涂覆或以其它方式分层在由初级和次级成分制备的多晶陶瓷体上。然后将涂覆的陶瓷体加热，使绝缘物质扩散到其晶间界面。

8. 发明授权

US09187338B2 Process for manufacturing needle-shaped strontium carbonate particles 有权
标题翻译：针状碳酸锶粒子的制造方法
公开(公告)号：US09187338B2
公开(公告)日：2015-11-17
申请号：US13985322
申请日：2012-02-15
申请人： Fumio Okada , Takeshi Himoto , Masayuki Fujimoto
发明人： Fumio Okada , Takeshi Himoto , Masayuki Fujimoto
IPC分类号： C01F11/18
CPC分类号： C01F11/187 , C01P2004/03 , C01P2004/10 , C01P2004/54 , C01P2004/60 , C01P2004/61 , C01P2006/12
摘要： Acicular strontium carbonate particles are manufactured by introducing gaseous carbon dioxide into an aqueous solution or suspension of strontium hydroxide having a concentration of 1 to 20 wt. %, at a flow rate of 0.5 to 200 mL/min., relative to one gram of the strontium hydroxide, while stirring the solution or suspension in the presence of a dicarboxylic acid, in which the dicarboxylic acid comprises a divalent linear hydrocarbon group having one to four carbon atoms and carboxyl group bonded to each terminals, with the proviso that the linear hydrocarbon group may be substituted with one or more C1-6 alkyl groups, and thus carbonating the strontium hydroxide.
摘要翻译：通过将气态二氧化碳引入浓度为1〜20重量％的氢氧化锶的水溶液或悬浮液中来制造碳酸锶碳酸盐颗粒。相对于1克氢氧化锶，流速为0.5-200毫升/分钟，同时在二羧酸存在下搅拌溶液或悬浮液，其中二羧酸包含二价直链烃基，其具有一个至四个碳原子和与每个末端键合的羧基，条件是直链烃基可以被一个或多个C 1-6烷基取代，从而使氢氧化锶碳酸化。

9. 发明申请

US20140065052A1 PROCESS FOR MANUFACTURING NEEDLE-SHAPED STRONTIUM CARBONATE PARTICLES 有权
标题翻译：制造针状碳酸锶颗粒的方法
公开(公告)号：US20140065052A1
公开(公告)日：2014-03-06
申请号：US13985322
申请日：2012-02-15
申请人： Fumio Okada , Takeshi Himoto , Masayuki Fujimoto
发明人： Fumio Okada , Takeshi Himoto , Masayuki Fujimoto
IPC分类号： C01F11/18
CPC分类号： C01F11/187 , C01P2004/03 , C01P2004/10 , C01P2004/54 , C01P2004/60 , C01P2004/61 , C01P2006/12
摘要： Acicular strontium carbonate particles are manufactured by introducing gaseous carbon dioxide into an aqueous solution or suspension of strontium hydroxide having a concentration of 1 to 20 wt. %, at a flow rate of 0.5 to 200 mL/min., relative to one gram of the strontium hydroxide, while stirring the solution or suspension in the presence of a dicarboxylic acid, in which the dicarboxylic acid comprises a divalent linear hydrocarbon group having one to four carbon atoms and carboxyl group bonded to each terminals, with the proviso that the linear hydrocarbon group may be substituted with one or more C1-6 alkyl groups, and thus carbonating the strontium hydroxide.
摘要翻译：通过将气态二氧化碳引入浓度为1〜20重量％的氢氧化锶的水溶液或悬浮液中来制造碳酸锶碳酸盐颗粒。相对于1克氢氧化锶，流速为0.5-200毫升/分钟，同时在二羧酸存在下搅拌溶液或悬浮液，其中二羧酸包含二价直链烃基，其具有一个至四个碳原子和与每个末端键合的羧基，条件是直链烃基可以被一个或多个C 1-6烷基取代，从而使氢氧化锶碳酸化。

10. 发明授权

US4405479A Dielectric ceramic materials with insulated boundaries between crystal grains, and process for preparation 失效
标题翻译：介电陶瓷材料与晶粒之间具有绝缘边界，以及制备工艺
公开(公告)号：US4405479A
公开(公告)日：1983-09-20
申请号：US443782
申请日：1982-11-22
申请人： Kiyoshi Murase , Nobutatsu Yamaoka , Masayuki Fujimoto
发明人： Kiyoshi Murase , Nobutatsu Yamaoka , Masayuki Fujimoto
IPC分类号： C04B35/46 , C04B35/47 , H01B3/12 , H01G4/12
CPC分类号： H01G4/1281 , C04B35/47
摘要： A dielectric ceramic material composed of primary and secondary ingredients forming in combination a polycrystalline ceramic proper, and of insulating substances diffused throughout the intergranular boundaries of the ceramic proper for an increase in apparent relative dielectric constant. The primary ingredients comprise, in relative proportions, 95.20-99.80 wt. % SrTiO.sub.3, 0.15-2.30 wt. % WO.sub.3, and 0.05-2.50 wt. % ZnO. The seconary ingredients comprise 0.02-0.10 wt. part SiO.sub.2 and 0.01-0.03 wt. part Al.sub.2 O.sub.3 with respect to 100 wt. parts of the primary ingredients, with the weight ratio of SiO.sub.2 to Al.sub.2 O.sub.3 being from 1.5 to 5.0. The insulating substances comprise 0.03-2.75 wt. % PbO, 0.11-4.23 wt. % Bi.sub.2 O.sub.3, and 0.001-0.18 wt. % B.sub.2 O.sub.3 with respect to the total weight of the primary and the secondary ingredients. In the fabrication of bodies of the ceramic the mixture of the insulating substances is coated or otherwise layered on polycrystalline ceramic bodies prepared from the primary and secondary ingredients. The coated ceramic bodies are then heated to cause diffusion of the insulating substances throughout their intergranular boundaries.
摘要翻译：由主要和次要成分组成的介电陶瓷材料，其组合形成多晶陶瓷本身，并且绝缘物质在陶瓷本身的整个晶界处扩散，以增加表观相对介电常数。主要成分以相对比例包含95.20-99.80wt。％SrTiO 3，0.15-2.30重量％％WO3和0.05-2.50wt。％ZnO。所述第二成分包含0.02-0.10wt。部分SiO2和0.01-0.03wt。部分Al2O3相对于100wt。主要成分的一部分，SiO 2与Al 2 O 3的重量比为1.5-5.0。绝缘物质包含0.03-2.75重量％％PbO，0.11-4.23wt。％Bi 2 O 3和0.001-0.18wt。％B2O3相对于初级和次级成分的总重量。在陶瓷体的制造中，绝缘物质的混合物被涂覆或以其它方式分层在由初级和次级成分制备的多晶陶瓷体上。然后将涂覆的陶瓷体加热，使绝缘物质扩散到其晶间界面。

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