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1. 发明授权

US5196034A Semiconductor wafer cleaning apparatus 失效
标题翻译： SEMICONDUCTOR WAFER CLEANING APPARATUS
公开(公告)号：US5196034A
公开(公告)日：1993-03-23
申请号：US737666
申请日：1991-07-30
申请人： Toshiki Ono , Shiro Yamasaki , Toshihiko Noguchi
发明人： Toshiki Ono , Shiro Yamasaki , Toshihiko Noguchi
IPC分类号： H01L21/304 , H01L21/00
CPC分类号： H01L21/67028 , Y10T29/41
摘要： A semiconductor wafer cleaning apparatus provided with an ice making unit and a jet nozzle for ejecting fine ice particles against a wafer held within a cleaning vessel includes an exhaust chamber having an expanded portion and connected to the cleaning vessel. Curved guide plates extend from cleaning vessel into the exhaust chamber equidistant from each other into the expanded portion to guide the jet particles into the expanded portion. A flow regulator plate having a multitude of inverted frustum-shaped tapered holes regulates the jetted particles within the cleaning bath in accordance with the downward flow direction. Further, the upward flow from the exhaust chamber along the side walls is caught by stopper plates and exhausted via exhaust ports.
摘要翻译：设置有制冰单元和喷射喷嘴的半导体晶片清洁设备包括具有扩展部分并连接到清洁容器的排气室，所述制冷单元和喷嘴用于将保存在清洁容器内的晶片喷射到精细冰颗粒。弯曲的引导板从清洁容器延伸到排放室中，彼此等距离地放入扩展部分中，以将射流颗粒引导到扩展部分中。具有多个反向截头锥形锥形孔的流量调节板根据向下流动方向调节清洗槽内的喷射颗粒。此外，从排气室沿着侧壁的向上流动被止动板卡住，并通过排气口排出。

2. 发明授权

US09017479B2 Nitride single crystal manufacturing apparatus 有权
标题翻译：氮化物单晶制造装置
公开(公告)号：US09017479B2
公开(公告)日：2015-04-28
申请号：US12181402
申请日：2008-07-29
申请人： Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Shiro Yamasaki
发明人： Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Shiro Yamasaki
IPC分类号： C30B35/00 , C30B11/04 , C30B9/10 , C30B19/02 , C30B19/06 , C30B29/40 , C30B7/00
CPC分类号： C30B9/10 , C30B7/00 , C30B19/02 , C30B19/06 , C30B29/406 , C30B35/002 , Y10S117/90 , Y10T117/10 , Y10T117/1016 , Y10T117/1024 , Y10T117/1064 , Y10T117/1096
摘要： The apparatus has a crucible for storing a solution; an inner container for storing a crucible; a heating container for storing the inner container, the heating container including heating elements, a container body provided with the heating elements and a lid combined with the container body; and a pressure vessel for storing the heating container and for charging an atmosphere comprising at least nitrogen gas. The lid also has a fitting surface to the container body that is inclined to a horizontal plane.
摘要翻译：该装置具有用于存储溶液的坩埚; 用于存储坩埚的内部容器; 用于存储内部容器的加热容器，包括加热元件的加热容器，设置有加热元件的容器主体和与容器主体组合的盖子; 以及用于储存所述加热容器并用于装入至少包含氮气的气体的压力容器。盖子还具有与容器主体相对于水平面倾斜的配合表面。

3. 发明授权

US08657955B2 Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal 有权
标题翻译：用于氮化镓单晶生长的熔体组成和用于生长氮化镓单晶的方法
公开(公告)号：US08657955B2
公开(公告)日：2014-02-25
申请号：US12462429
申请日：2009-08-03
申请人： Makoto Iwai , Takanao Shimodaira , Yoshihiko Yamamura , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Shiro Yamasaki
发明人： Makoto Iwai , Takanao Shimodaira , Yoshihiko Yamamura , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Shiro Yamasaki
IPC分类号： C30B11/02
CPC分类号： C30B29/406 , C30B9/12
摘要： It is provided a melt composition for growing a gallium nitride single crystal by flux method. The melt composition contains gallium, sodium and barium, and a content of barium is 0.05 to 0.3 mol % with respect to 100 mol % of sodium.
摘要翻译：提供一种通过助熔剂生长氮化镓单晶的熔融组合物。熔融组合物含有镓，钠和钡，相对于100摩尔％的钠，钡的含量为0.05〜0.3摩尔％。

4. 发明申请

US20090000542A1 APPARATUS FOR PRODUCING NITRIDE SINGLE CRYSTAL 有权
标题翻译：用于生产氮化物单晶的装置
公开(公告)号：US20090000542A1
公开(公告)日：2009-01-01
申请号：US12192428
申请日：2008-08-15
申请人： Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Shiro Yamasaki
发明人： Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Shiro Yamasaki
IPC分类号： C30B19/02
CPC分类号： C30B9/10 , C30B19/02 , C30B19/06 , C30B29/403 , Y10T117/10 , Y10T117/1024
摘要： It is disclosed an apparatus for growing a nitride single crystal using a flux containing an easily oxidizable substance. The apparatus has a crucible for storing the flux; a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen gas; furnace materials disposed within the pressure vessel and out of the crucible; heaters attached to the furnace material; and alkali-resistant and heat-resistant metallic layers covering the furnace material.
摘要翻译：公开了一种使用含有易氧化物质的助熔剂生长氮化物单晶的装置。该装置具有用于储存焊剂的坩埚; 压力容器，用于储存所述坩埚并给至少含有氮气的气氛充电; 设置在压力容器内并从坩埚中排出的炉料; 加热炉附着在炉料上; 以及覆盖炉料的耐碱和耐热金属层。

5. 发明授权

US06486068B2 Method for manufacturing group III nitride compound semiconductor laser diodes 失效
标题翻译：制造III族氮化物半导体激光二极管的方法
公开(公告)号：US06486068B2
公开(公告)日：2002-11-26
申请号：US09004608
申请日：1998-01-08
申请人： Shiro Yamasaki , Seiji Nagai , Masayoshi Koike , Isamu Akasaki , Hiroshi Amano , Isao Yamada , Jiro Matsuo
发明人： Shiro Yamasaki , Seiji Nagai , Masayoshi Koike , Isamu Akasaki , Hiroshi Amano , Isao Yamada , Jiro Matsuo
IPC分类号： H01L21302
CPC分类号： H01S5/0201 , H01S5/0203 , H01S5/32341
摘要： A method for manufacturing a laser diode using Group III nitride compound semiconductor comprising a buffer layer 2, an n+ layer 3, a cladding layer 4, an active layer 5, a p-type cladding layer 61, a contact layer 62, an SiO2 layer 9, an electrode 7 which is formed on the window formed in a portion of the SiO2 layer 9, and an electrode 8 which is formed on a portion of the n+ layer 3 by etching a portion of 4 layers from the contact layer 62 down to the cladding layer 4. One pair of opposite facets S of a cavity is formed by RIBE, and then the facets are etched by gas cluster ion beam etching using Ar gas. As a result, the facets S are flatted and the mirror reflection of the facets S is improved.
摘要翻译：一种使用III族氮化物化合物半导体制造激光二极管的方法，包括缓冲层2，n +层3，包覆层4，有源层5，p型覆层61，接触层62，SiO 2层如图9所示，形成在形成在SiO 2层9的一部分上的窗口上的电极7和通过从接触层62蚀刻4层的一部分而形成在n +层3的一部分上的电极8，通过RIBE形成空腔的一对相对面S，然后通过使用Ar气体的气体簇离子束蚀刻蚀刻该刻面。结果，小面S变平，并且小面S的镜面反射得到改善。

6. 发明授权

US08765313B2 Fuel cell system and method of controlling same 失效
标题翻译：燃料电池系统及其控制方法
公开(公告)号：US08765313B2
公开(公告)日：2014-07-01
申请号：US11902270
申请日：2007-09-20
申请人： Kenji Kurita , Kazumasa Takada , Shiro Yamasaki , Norihiko Toyonaga
发明人： Kenji Kurita , Kazumasa Takada , Shiro Yamasaki , Norihiko Toyonaga
IPC分类号： H01M8/06 , H01M8/04
CPC分类号： H01M8/04753 , H01M8/0267 , H01M8/04223 , H01M8/04225 , H01M8/04228 , H01M8/04679 , H01M8/04768 , H01M8/04776 , H01M8/04783 , H01M8/0612 , H01M8/241 , H01M2250/20 , Y02T90/32
摘要： A fuel cell system includes a reformer that generates reformed gas using reforming fuel; a fuel cell that generates electric power using the reformed gas generated by the reformer; and a control device. The control device includes a plurality of different stop control modes for stopping operation of the fuel cell system, and selects a specific stop control mode among the plurality of stop control modes, according to the cause of a malfunction of the fuel cell system.
摘要翻译：燃料电池系统包括使用重整燃料产生重整气体的重整器; 使用由重整器产生的重整气产生电力的燃料电池; 和控制装置。控制装置包括用于停止燃料电池系统的操作的多种不同的停止控制模式，并且根据燃料电池系统的故障原因，在多个停止控制模式中选择特定的停止控制模式。

7. 发明申请

US20080081231A1 Fuel cell system and method of controlling same 失效
标题翻译：燃料电池系统及其控制方法
公开(公告)号：US20080081231A1
公开(公告)日：2008-04-03
申请号：US11902270
申请日：2007-09-20
申请人： Kenji Kurita , Kazumasa Takada , Shiro Yamasaki , Norihiko Toyonaga
发明人： Kenji Kurita , Kazumasa Takada , Shiro Yamasaki , Norihiko Toyonaga
IPC分类号： H01M8/04
CPC分类号： H01M8/04753 , H01M8/0267 , H01M8/04223 , H01M8/04225 , H01M8/04228 , H01M8/04679 , H01M8/04768 , H01M8/04776 , H01M8/04783 , H01M8/0612 , H01M8/241 , H01M2250/20 , Y02T90/32
摘要： A fuel cell system includes a reformer that generates reformed gas using reforming fuel; a fuel cell that generates electric power using the reformed gas generated by the reformer; and a control device. The control device includes a plurality of different stop control modes for stopping operation of the fuel cell system, and selects a specific stop control mode among the plurality of stop control modes, according to the cause of a malfunction of the fuel cell system.
摘要翻译：燃料电池系统包括使用重整燃料产生重整气体的重整器; 使用由重整器产生的重整气产生电力的燃料电池; 和控制装置。控制装置包括用于停止燃料电池系统的操作的多种不同的停止控制模式，并且根据燃料电池系统的故障原因，在多个停止控制模式中选择特定的停止控制模式。

8. 发明授权

US06680957B1 Group III nitride compound semiconductor laser 失效
标题翻译： III族氮化物化合物半导体激光器
公开(公告)号：US06680957B1
公开(公告)日：2004-01-20
申请号：US09515493
申请日：2000-02-29
申请人： Masayoshi Koike , Shiro Yamasaki , Yuta Tezen , Seiji Nagai , Akira Kojima , Toshio Hiramatsu
发明人： Masayoshi Koike , Shiro Yamasaki , Yuta Tezen , Seiji Nagai , Akira Kojima , Toshio Hiramatsu
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/34333
摘要： A semiconductor laser 101 comprises a sapphire substrate 1, an AlN buffer layer 2, Si-doped GaN n-layer 3, Si-doped Al0.1Ga0.9N n-cladding layer 4, Si-doped GaN n-guide layer 5, an active layer 6 having multiple quantum well (MQW) structure in which about 35 Å in thickness of GaN barrier layer 62 and about 35 Å in thickness of Ga0.95In0.05N well layer 61 are laminated alternately, Mg-doped GaN p-guide layer 7, Mg-doped Al0.1Ga0.9N p-cladding layer 8, and Mg-doped GaN p-contact layer 9 are formed successively thereon. A ridged hole injection part B which contacts to a ridged resonator part A is formed to have the same width as the width w of an Ni electrode 10. Holes transmitted from the Ni electrode 10 are injected to the active layer 6 with high current density, and electric current threshold for laser oscillation can be decreased. Electric current threshold can be improved more effectively by forming also the p-guide layer 7 to have the same width as the width w of the Ni electrode 10.
摘要翻译：半导体激光器101包括蓝宝石衬底1，AlN缓冲层2，掺杂Si的GaN n层3，掺杂Si的Al 0.1 Ga 0.9 N n包层4，掺杂Si的GaN n引导层5，具有多个量子阱（MQW）结构的有源层6，其中厚度约为35的GaN阻挡层62和约35厚度的Ga0.95In0.05N阱层61交替层叠，掺杂Mg的GaN p引导层如图7所示，依次形成Mg掺杂的Al 0.1 Ga 0.9 N p包覆层8和Mg掺杂的GaN p接触层9。与脊状谐振器部件A接触的脊状空穴注入部分B形成为具有与Ni电极10的宽度w相同的宽度。从Ni电极10传输的孔以高电流密度注入到有源层6中，可以降低激光振荡的电流阈值。也可以通过将p导向层7形成为具有与Ni电极10的宽度w相同的宽度来更有效地提高电流阈值。

9. 发明授权

US5953581A Methods for manufacturing group III nitride compound semiconductor laser diodes 失效
标题翻译：制造III族氮化物半导体激光二极管的方法
公开(公告)号：US5953581A
公开(公告)日：1999-09-14
申请号：US840895
申请日：1997-04-17
申请人： Shiro Yamasaki , Seiji Nagai , Masayoshi Koike
发明人： Shiro Yamasaki , Seiji Nagai , Masayoshi Koike
IPC分类号： H01L33/10 , H01L33/12 , H01L33/14 , H01L33/32 , H01S5/00 , H01S5/02 , H01S5/10 , H01S5/323 , H01S5/343 , H01L21/66
CPC分类号： H01S5/32308 , H01S5/0203
摘要： As a method for manufacturing a laser diode using a group III nitride compound semiconductor, independent dry etching process for forming electrodes and mirror facets are adopted. A portion of an upper semiconductor layer is etched for forming a window. An electrode for a lower semiconductor layer is formed through the window. After electrodes are formed, then, etching is carried out for forming mirror facets of laser cavity. This method realizes high oscillation, because the method enhances parallel and vertical degrees of the mirror facets. Further, cleanness of the mirror facets are improved, because they are formed after the electrodes are formed. The method further lowers resistivity of lower semiconductor layer, because its thickness can be controlled easily without etching excessively. As a result, luminous efficiency is improved.
摘要翻译：作为使用III族氮化物化合物半导体制造激光二极管的方法，采用用于形成电极和镜面的独立的干蚀刻工艺。上部半导体层的一部分被蚀刻以形成窗口。通过窗口形成下半导体层用电极。在形成电极之后，进行蚀刻以形成激光腔的镜面。该方法实现了高振荡，因为该方法增强了镜面的平行和垂直度。此外，改善了镜面的清洁度，因为它们在形成电极之后形成。该方法进一步降低下半导体层的电阻率，因为其厚度可以容易地控制，而不会过度蚀刻。结果，发光效率提高。

10. 发明授权

US08231729B2 Apparatus for producing nitride single crystal 有权
标题翻译：用于生产氮化物单晶的设备
公开(公告)号：US08231729B2
公开(公告)日：2012-07-31
申请号：US12192428
申请日：2008-08-15
申请人： Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Shiro Yamasaki
发明人： Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Shiro Yamasaki
IPC分类号： C30B11/04
CPC分类号： C30B9/10 , C30B19/02 , C30B19/06 , C30B29/403 , Y10T117/10 , Y10T117/1024
摘要： It is disclosed an apparatus for growing a nitride single crystal using a flux containing an easily oxidizable substance. The apparatus has a crucible for storing the flux; a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen gas; furnace materials disposed within the pressure vessel and out of the crucible; heaters attached to the furnace material; and alkali-resistant and heat-resistant metallic layers covering the furnace material.
摘要翻译：公开了一种使用含有易氧化物质的助熔剂生长氮化物单晶的装置。该装置具有用于储存焊剂的坩埚; 压力容器，用于储存所述坩埚并给至少含有氮气的气氛充电; 设置在压力容器内并从坩埚中排出的炉料; 加热炉附着在炉料上; 以及覆盖炉料的耐碱和耐热金属层。

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