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1. 发明授权

US5200634A Thin film phototransistor and photosensor array using the same 失效
标题翻译：薄膜光电晶体管和光电传感器阵列使用相同
公开(公告)号：US5200634A
公开(公告)日：1993-04-06
申请号：US803798
申请日：1991-12-09
申请人： Toshihisa Tsukada , Yoshiyuki Kaneko , Hideaki Yamamoto , Norio Koike , Ken Tsutsui , Haruo Matsumaru , Yasuo Tanaka
发明人： Toshihisa Tsukada , Yoshiyuki Kaneko , Hideaki Yamamoto , Norio Koike , Ken Tsutsui , Haruo Matsumaru , Yasuo Tanaka
IPC分类号： H01L27/146 , H01L31/113 , H04N1/031
CPC分类号： H04N1/02805 , H01L27/14643 , H01L31/1136 , H04N1/0313 , H04N1/0316
摘要： A thin film phototransistor is provided having a field effect transistor structure where at least one end of the gate electrode is not overlapped with an electrode neighboring the end. Such a thin film phototransistor has: (1) a function as a photosensor and a switching function; (2) a high input impedance; (3) a voltage control function; and (4) a high photocurrent ON/OFF ratio. This thin film phototransistor can be used independently or together with a thin film transistor for picture elements of a one-dimensional or two-dimensional photosensor array, producing satisfactory results.
摘要翻译：提供具有场效应晶体管结构的薄膜光电晶体管，其中栅电极的至少一端不与邻近端的电极重叠。这种薄膜光电晶体管具有：（1）作为光电传感器和开关功能的功能; （2）高输入阻抗; （3）电压控制功能; 和（4）高光电流ON / OFF比。该薄膜光电晶体管可以单独使用或与一维或二维光电传感器阵列的图像元素的薄膜晶体管一起使用，产生令人满意的结果。

2. 发明授权

US4990981A Thin film transistor and a liquid crystal display device using same 失效
标题翻译：薄膜晶体管和使用其的液晶显示装置
公开(公告)号：US4990981A
公开(公告)日：1991-02-05
申请号：US296811
申请日：1989-01-13
申请人： Yasuo Tanaka , Haruo Matsumaru , Hideaki Yamamoto , Toshihisa Tsukada , Ken Tsutsui , Yoshiyuki Kaneko
发明人： Yasuo Tanaka , Haruo Matsumaru , Hideaki Yamamoto , Toshihisa Tsukada , Ken Tsutsui , Yoshiyuki Kaneko
IPC分类号： G02F1/136 , G02F1/1368 , H01L29/786
CPC分类号： G02F1/1368 , H01L29/78633 , H01L29/78669
摘要： A thin film transistor is disclosed, which comprises a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, and a drain electrode, which are disposed on a predetermined substrate, and which is so constructed that the semiconductor layer doesn't exist in any regions, to which strong electric field parallel to said substrate is applied. Besides this thin film transistor a liquid crystal display device using it is disclosed. The thin film transistor according to the present invention has a small increase in the off level current due to photo-current and it is suitable for driving pixels in the liquid crystal display device.
摘要翻译：公开了一种薄膜晶体管，其包括设置在预定衬底上的栅电极，栅极绝缘层，半导体层，源电极和漏电极，并且其构造使得半导体层不是“ 存在于与所述基板平行的强电场的任何区域中。除此之外，还公开了使用该薄膜晶体管的液晶显示装置。根据本发明的薄膜晶体管由于光电流而导致的关断电平的增加很小，并且适用于驱动液晶显示装置中的像素。

3. 发明授权

US5719408A Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment 失效
标题翻译：薄膜晶体管基板，其制造方法，液晶显示面板和液晶显示设备
公开(公告)号：US5719408A
公开(公告)日：1998-02-17
申请号：US803011
申请日：1997-02-21
申请人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
发明人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/36 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L29/04 , H01L27/108 , H01L31/036
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/136213 , H01L29/4908 , H01L2924/0002
摘要： In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus lines. The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).
摘要翻译：在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。本发明还涉及在铝图案上选择性地形成阳极氧化膜的方法。也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

4. 发明授权

US5889573A Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment 失效
标题翻译：薄膜晶体管基板，其制造方法，液晶显示面板和液晶显示设备
公开(公告)号：US5889573A
公开(公告)日：1999-03-30
申请号：US928719
申请日：1997-09-12
申请人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
发明人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/36 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L29/04
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/136213 , H01L29/4908 , H01L2924/0002
摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof.In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines.The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).
摘要翻译：本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示设备，更具体地，涉及能够改善其特性的结构和制造方法。在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。本发明还涉及在铝图案上选择性地形成阳极氧化膜的方法。也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

5. 发明授权

US5359206A Thin film transistor substrate, liquid crystal display panel and liquid crystal display equipment 失效
标题翻译：薄膜晶体管基板，液晶显示面板和液晶显示设备
公开(公告)号：US5359206A
公开(公告)日：1994-10-25
申请号：US674328
申请日：1991-04-15
申请人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
发明人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/36 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L29/04 , H01L23/48 , H01L27/01 , H01L31/036
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/136213 , H01L29/4908 , H01L2924/0002
摘要： Disclosed is an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. In the TFT substrate, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extending therefrom, for gate electrodes, and for electrodes of thin film capacitors (additional capacitance, storage capacitance), and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulating films for the intersections between the bus-lines. Also disclosed is a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).
摘要翻译： PCT No.PCT / JP90 / 01039 Sec。 371日期：1991年4月15日 102（e）日期1991年4月15日PCT提交1990年8月13日PCT公布。 WO91 / 02999 PCT出版物 1991年3月7日公开。公开是使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用液体的液晶显示设备水晶显示面板。在TFT基板中，使用Cr或Ta作为栅极端子，铝或主要由铝构成的金属用于从栅极电极延伸的栅极总线，以及用于薄膜电容器的电极（附加电容，存储电容）并且由金属构成并且没有缺陷的阳极氧化膜用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一种。还公开了在铝图案上选择性地形成阳极氧化膜的方法。也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

6. 发明授权

US5585290A Method of manufacturing a thin film transistor substrate 失效
标题翻译：制造薄膜晶体管基板的方法
公开(公告)号：US5585290A
公开(公告)日：1996-12-17
申请号：US158219
申请日：1993-11-29
申请人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
发明人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/36 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L21/84
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/136213 , H01L29/4908 , H01L2924/0002
摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof. In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines.
摘要翻译：本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示设备，更具体地，涉及能够改善其特性的结构和制造方法。在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。

7. 发明授权

US5672523A Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment 失效
标题翻译：薄膜晶体管基板，其制造方法，液晶显示面板和液晶显示设备
公开(公告)号：US5672523A
公开(公告)日：1997-09-30
申请号：US451209
申请日：1995-05-26
申请人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
发明人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/36 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L21/84
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/136213 , H01L29/4908 , H01L2924/0002
摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. Cr or Ta is used for gate terminals; aluminum or a metal composed mainly of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance); and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, for the anodic oxidation, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .beta..gtoreq.110-20T(T: film thickness of the positive type photoresist). The photoresist is subjected to a heat treatment prior to and after exposure, preferably the after-treatment being performed before developing. The anodic oxidation film is heat-treated after formation, to reduce the leak current.
摘要翻译：本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用该TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示装置。 Cr或Ta用于栅极端子; 铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）; 并且由金属构成并且没有缺陷的阳极氧化膜用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一种。在用正型光致抗蚀剂形成选择性氧化掩模到铝图案上的所需区域时，为了阳极氧化，在选择性氧化掩模和铝图案之间形成的角度（θ）被制成： 20T（T：正型光致抗蚀剂的膜厚）。在曝光之前和之后对光致抗蚀剂进行热处理，优选在显影之前进行后处理。阳极氧化膜在形成后进行热处理，以减少漏电流。

8. 发明授权

US5032531A Method of manufacturing active matrix panel 失效
标题翻译：有源矩阵面板的制造方法
公开(公告)号：US5032531A
公开(公告)日：1991-07-16
申请号：US376866
申请日：1989-07-07
申请人： Ken Tsutsui , Toshihisa Tsukada , Hideaki Yamamoto , Yasuo Tanaka , Haruo Matsumaru
发明人： Ken Tsutsui , Toshihisa Tsukada , Hideaki Yamamoto , Yasuo Tanaka , Haruo Matsumaru
IPC分类号： G02F1/136 , G02F1/1343 , G02F1/1362 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： G02F1/1368 , H01L27/1214 , H01L29/66765 , G02F1/136213
摘要： In a first manufacturing step of an active matrix liquid-crystal panel, a transparent conductor film and a metal film are sequentially accumulated on a substrate in this order so as to form a two-layer film. The two-layer film including the transparent conductor film and the metal film is subjected to photoetching to simultaneously form at least a pixel electrode (transparent conductor film) and a gate electrode (metal film) of a thin-film transistor according to a predetermined pattern. In a fabrication process near the end of the fabrication, when the source and drain electrodes of the thin-film transistors are formed, the metal film on the pixel electrode is simultaneously removed. Since the removal of the metal film protecting the pixel electrode is simultaneously achieved at a point near the final process, protection of the pixel electrode is guaranteed, thereby realizing improvement of the yielding and reduction of the production process.
摘要翻译：在有源矩阵液晶面板的第一制造工序中，依次将透明导体膜和金属膜累积在基板上，形成双层膜。对包含透明导体膜和金属膜的两层膜进行光刻，以至少形成根据预定图案的薄膜晶体管的像素电极（透明导体膜）和栅电极（金属膜）。在接近制造结束的制造工艺中，当形成薄膜晶体管的源极和漏极时，同时去除像素电极上的金属膜。由于保护像素电极的金属膜的去除同时在最终工艺附近实现，因此保护像素电极的保护，从而实现生产过程的屈服和减少的改善。

9. 发明授权

US4855795A Photosensor 失效
标题翻译：光电传感器
公开(公告)号：US4855795A
公开(公告)日：1989-08-08
申请号：US898540
申请日：1986-08-21
申请人： Hideaki Yamamoto , Akira Sasano , Haruo Matsumaru , Yasuo Tanaka , Toshihisa Tsukada
发明人： Hideaki Yamamoto , Akira Sasano , Haruo Matsumaru , Yasuo Tanaka , Toshihisa Tsukada
IPC分类号： H01L27/14 , H01L27/146 , H01L31/0216 , H01L31/0224 , H01L31/09 , H01L31/20 , H04N1/028
CPC分类号： H01L27/14665 , H01L31/0216 , H01L31/022466 , H01L31/095 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A photosensor comprises an insulating substrate, an electrode, a photoconductor layer composed of a hydrogenated amorphous silicon semiconductor layer obtained by the glow discharge decomposition of monosilane gas, a junction stabilizing layer composed of a boron-containing hydrogenated amorphous silicon semiconductor which is obtained by the glow discharge decomposition of a mixed gas of monosilane and diborane, a transparent electrode and a transparent protective layer, these elements being laminated in that order. The insertion of the junction stabilizing layer between the photoconductor layer and the transparent electrode greatly improves the dark current characteristic. The electrode, the photoconductor layer and the junction stabilizing layer can be divided in correspondence with each picture element, thereby improving the resolution of the photosensor.
摘要翻译：光传感器包括绝缘基板，电极，由通过单硅烷气体的辉光放电分解获得的氢化非晶硅半导体层构成的感光体层，由含硼氢化非晶硅半导体构成的结稳定层，其由甲硅烷和乙硼烷的混合气体的辉光放电分解，透明电极和透明保护层，这些元素按顺序层压。在光电导体层和透明电极之间插入结稳定层极大地改善了暗电流特性。电极，光电导体层和结稳定层可以与每个像素对应地划分，从而提高光传感器的分辨率。

10. 发明授权

US4407010A Solid state image pickup device 失效
标题翻译：固态图像拾取装置
公开(公告)号：US4407010A
公开(公告)日：1983-09-27
申请号：US290570
申请日：1981-08-06
申请人： Toru Baji , Toshihisa Tsukada , Norio Koike , Toshiyuki Akiyama , Iwao Takemoto , Shigeru Shimada , Chushirou Kusano , Shinya Ohba , Haruo Matsumaru
发明人： Toru Baji , Toshihisa Tsukada , Norio Koike , Toshiyuki Akiyama , Iwao Takemoto , Shigeru Shimada , Chushirou Kusano , Shinya Ohba , Haruo Matsumaru
IPC分类号： H01L27/14 , H01L21/8234 , H01L23/62 , H01L23/64 , H01L27/02 , H01L27/06 , H01L27/088 , H01L27/092 , H01L27/146 , H01L29/78 , H01L31/08 , H02H7/20 , H03F1/42 , H03F1/52 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/369 , H04N5/374 , H04N3/14
CPC分类号： H01L23/62 , H01L23/647 , H01L27/0251 , H01L27/14654 , H04N3/1512 , H04N3/1568 , H01L2924/0002
摘要： A solid state image pickup device having a plurality of solid state elements in a two-dimensional array so as to form picture cells. Each solid state element includes a photoelectric converting element and a switching field effect transistor to permit scanning of the elements by scanners. To counteract noise and blooming, a second field effect transistor acting as an amplifier is connected between the photoelectric converting element and the switching field effect transistor. A third field effect transistor is coupled to the photoelectric converting element for resetting the same.
摘要翻译：具有二维阵列中的多个固态元件以形成图形单元的固态图像拾取装置。每个固态元件包括光电转换元件和开关场效应晶体管，以允许扫描器扫描元件。为了抵消噪声和起霜，用作放大器的第二场效应晶体管连接在光电转换元件和开关场效应晶体管之间。第三场效应晶体管耦合到光电转换元件，用于复位它。

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