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1. 发明申请

US20120174986A1 METHOD OF OPERATING ON-OFF VALVE 有权
标题翻译：操作开关阀的方法
公开(公告)号：US20120174986A1
公开(公告)日：2012-07-12
申请号：US13347812
申请日：2012-01-11
申请人： Toshihisa NOZAWA
发明人： Toshihisa NOZAWA
IPC分类号： F17D3/00
CPC分类号： F16K31/528 , F16K1/24 , Y10T137/0396
摘要： A method of operating an on-off valve comprises closing one of two openings of a valve body with a seal member of a closure element within the valve body, the valve body being within an evacuation pipe connected between a process chamber and an evacuation apparatus; moving the closure element, using a linear driver, so that the seal member is moved away from the one of the two openings; and positioning the closure element into a retreat portion in an surface of the valve body, using the linear driver and a pivotal driver adapted to pivot the closure element between the one of the two openings and the retreat portion, so that the seal member is closed inside a protection seal member of the closure element to surround the seal member, thereby preventing the seal member from being directly exposed to the process gas.
摘要翻译：操作开关阀的方法包括用阀体内的封闭元件的密封构件封闭阀体的两个开口中的一个，所述阀体位于连接在处理室和抽空装置之间的抽气管内; 使用线性驱动器移动闭合元件，使得密封构件从两个开口中的一个移开; 并且使用线性驱动器和适于将闭合元件枢转在两个开口中的一个和后退部分之间的枢转驱动器，将闭合元件定位在阀体的表面中的后退部分中，使得密封构件被关闭在封闭元件的保护密封构件内部，以围绕密封构件，从而防止密封构件直接暴露于处理气体。

2. 发明申请

US20090266711A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工设备
公开(公告)号：US20090266711A1
公开(公告)日：2009-10-29
申请号：US12407959
申请日：2009-03-20
申请人： Kiyotaka ISHIBASHI , Toshihisa NOZAWA
发明人： Kiyotaka ISHIBASHI , Toshihisa NOZAWA
IPC分类号： C23C14/34
CPC分类号： H01L21/67742 , H01L21/67005 , H01L21/67196
摘要： The substrate processing apparatus includes: at least one processing chamber in which a semiconductor wafer is processed; a transfer chamber disposed adjacent to the at least one processing chamber; a vacuum pump for depressurizing an inside of the transfer chamber; a transfer device for carrying the semiconductor wafer between the transfer chamber and the at least one processing chamber; and a foreign substance removing unit for removing foreign substances adhered to the transfer device in the transfer chamber.
摘要翻译：基板处理装置包括：处理半导体晶片的至少一个处理室; 传送室，邻近所述至少一个处理室设置; 用于对转移室内部进行减压的真空泵; 用于在所述转移室和所述至少一个处理室之间承载所述半导体晶片的转移装置; 以及用于去除附着在转移室中的转印装置的异物的异物去除单元。

3. 发明申请

US20090194237A1 PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：等离子体处理系统
公开(公告)号：US20090194237A1
公开(公告)日：2009-08-06
申请号：US12362769
申请日：2009-01-30
申请人： Toshihisa NOZAWA , Toshifumi KITAHARA
发明人： Toshihisa NOZAWA , Toshifumi KITAHARA
IPC分类号： H01L21/306 , C23C16/513
CPC分类号： H01L21/68735 , C23C16/4404 , H01L21/67748
摘要： A plasma processing system includes: a plasma processing apparatus which processes a substrate in a processing container by turning a processing gas supplied inside the processing container into plasma; and a carrier arm which carries the substrate in and out of the processing container, wherein a loading table is mounted inside the processing container and the substrate is loaded on the top surface of the loading table, and one or more recessed portions are formed on regions of the top surface of the loading table, wherein the regions corresponds to locations on the carrier arm for supporting the substrate. The coating layer is not transferred from the top surface of the loading table to the back of the substrate in the regions corresponding to the locations on the carrier arm for supporting the substrate. Accordingly, the coating layer is not transferred to the top surface of the carrier arm.
摘要翻译：等离子体处理系统包括：等离子体处理装置，其通过将处理容器内供给的处理气体转化为等离子体来处理处理容器中的基板; 以及载体臂，其承载基板进出处理容器，其中装载台安装在处理容器内部，基板装载在装载台的顶表面上，并且一个或多个凹部形成在区域，其中所述区域对应于载体臂上用于支撑衬底的位置。在对应于用于支撑衬底的载体臂上的位置的区域中，涂层不会从负载台的顶表面转移到衬底的背面。因此，涂层不会转移到载体臂的上表面。

4. 发明申请

US20090230342A1 GATE VALVE AND SEMICONDUCTOR MANUFACTURING APPARATUS 有权
标题翻译：门阀和半导体制造设备
公开(公告)号：US20090230342A1
公开(公告)日：2009-09-17
申请号：US12401076
申请日：2009-03-10
申请人： Shinji KOMOTO , Toshihisa NOZAWA
发明人： Shinji KOMOTO , Toshihisa NOZAWA
IPC分类号： F16K1/16
CPC分类号： H01L21/67126 , Y10S251/90 , Y10S414/135
摘要： A gate valve of a semiconductor manufacturing apparatus, which is formed between a processing chamber in which processing is performed and a transfer chamber which carries a substrate on which the processing is performed, includes a gate valve at a side of the processing chamber; a sealing member which is formed in the gate valve at the side of the processing chamber; a gate valve at the side of the transfer chamber; a sealing member which is formed in the gate valve at the side of the transfer chamber; and a thermal insulator which is formed between the gate valve at the side of the processing chamber and the gate valve at the side of the transfer chamber.
摘要翻译：半导体制造装置的闸阀形成在执行处理的处理室和承载执行了处理的基板的传送室之间，包括处理室侧的闸阀; 密封构件，其形成在处理室侧的闸阀中; 在转移室一侧的闸阀; 密封构件，其形成在所述输送室侧的所述闸阀中; 以及形成在处理室侧的闸阀与传送室一侧的闸阀之间的绝热体。

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