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1. 发明授权

US4908831A Buried type semiconductor laser device 失效
公开(公告)号：US4908831A
公开(公告)日：1990-03-13
申请号：US314363
申请日：1989-02-22
申请人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/223 , H01S5/227 , H01S5/24
CPC分类号： H01S5/24 , H01S5/227 , H01S5/0035 , H01S5/2235 , H01S5/2237 , H01S5/2275
摘要： A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operation area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.

2. 发明授权

US4908830A Buried type semiconductor laser device 失效
标题翻译：埋式半导体激光器件
公开(公告)号：US4908830A
公开(公告)日：1990-03-13
申请号：US313982
申请日：1989-02-22
申请人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/223 , H01S5/227 , H01S5/24
CPC分类号： H01S5/24 , H01S5/227 , H01S5/0035 , H01S5/2235 , H01S5/2237 , H01S5/2275
摘要： A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operating area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.

3. 发明授权

US4841534A Buried type semiconductor laser device 失效
标题翻译：埋式半导体激光器件
公开(公告)号：US4841534A
公开(公告)日：1989-06-20
申请号：US229212
申请日：1988-08-05
申请人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/223 , H01S5/227 , H01S5/24
CPC分类号： H01S5/24 , H01S5/227 , H01S5/0035 , H01S5/2235 , H01S5/2237 , H01S5/2275
摘要： A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operating area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.

4. 发明授权

US4839900A Buried type semiconductor laser device 失效
标题翻译：埋式半导体激光器件
公开(公告)号：US4839900A
公开(公告)日：1989-06-13
申请号：US897337
申请日：1986-08-15
申请人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/223 , H01S5/227 , H01S5/24
CPC分类号： H01S5/24 , H01S5/227 , H01S5/0035 , H01S5/2235 , H01S5/2237 , H01S5/2275
摘要： A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operating area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.
摘要翻译：一种埋式半导体激光器件，包括在半导体衬底上包括条纹激光振荡操作区的多层外延生长晶体，其中所述激光振荡操作区域包含具有与所述衬底相同极性的缓冲层，活性层和具有与所述基板的极性不同的包覆层，所述激光振荡操作区域被夹在所述基板上并且具有与所述基板不同的极性不同的所述掩埋层的一部分与所述掩埋层的另一部分之间的所述衬底，通过所述衬底或具有与所述衬底具有相同极性的杂质的扩散区域，以将所述掩埋层与所述包层电隔离，从而保持无效电流从低覆盖层流到所述掩埋层即使当注入到所述装置中的电流增加时。

5. 发明授权

US4692206A Method for producing a semiconductor laser device having a buried heterostructure 失效
标题翻译：一种具有掩埋异质结构的半导体激光器件的制造方法
公开(公告)号：US4692206A
公开(公告)日：1987-09-08
申请号：US830857
申请日：1986-02-19
申请人： Shinji Kaneiwa , Haruhisa Takiguchi , Toshihiko Yoshida , Sadayoshi Matsui
发明人： Shinji Kaneiwa , Haruhisa Takiguchi , Toshihiko Yoshida , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/22 , H01S5/227 , H01S3/18
CPC分类号： H01S5/227 , H01S5/2206 , H01S5/2275
摘要： A method for producing a semiconductor laser device having a buried heterostructure includes a multi-layered crystal structure, containing an active layer for laser oscillation, on a p-substrate, said multi-layered crystal structure having a striped mesa-portion, a p-n-p multi-layered structure surrounding said mesa-portion and a burying layer disposed on an upper face of said striped mesa-portion. The unique structure results in a heterojunction at each of both side faces of said active layer in said mesa-portion.
摘要翻译：一种具有掩埋异质结构的半导体激光器件的制造方法包括在p型基板上含有激光振荡用活性层的多层结晶结构体，具有条状台面部的多层结晶结构体，pnp多围绕所述台面部分的层状结构以及设置在所述条状台面部分的上表面上的掩埋层。独特的结构在所述台面部分中的所述有源层的两个侧面的每一个处产生异质结。

6. 发明授权

US4997747A Method for the formation of a diffraction grating 失效
$Method for the formation of a diffraction grating$
标题翻译：用于形成衍射光栅的方法
公开(公告)号：US4997747A
公开(公告)日：1991-03-05
申请号：US253811
申请日：1988-10-05
申请人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Sadayoshi Matsui
IPC分类号： G02B5/18 , G02B5/32 , G02B6/124 , H01S5/00 , H01S5/12
CPC分类号： H01S5/12 , G02B5/1857 , G02B5/32 , G02B6/124 , H01S5/124 , Y10S359/90
摘要： A method for the formation of a diffraction grating on a substrate using a holographic technique and an etching technique, wherein the periodicity of the pattern of the diffraction grating can be changed at will by a change of the light-path length of one of the two light fluxes from a holographic exposing system.

7. 发明授权

US4745616A Semiconductor laser device with a diffraction grating 失效
$Semiconductor laser device with a diffraction grating$
标题翻译：具有衍射光栅的半导体激光器件
公开(公告)号：US4745616A
公开(公告)日：1988-05-17
申请号：US830864
申请日：1986-02-19
申请人： Shinji Kaneiwa , Haruhisa Takiguchi , Toshihiko Yoshida , Sadayoshi Matsui
发明人： Shinji Kaneiwa , Haruhisa Takiguchi , Toshihiko Yoshida , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/12 , H01S3/19
CPC分类号： H01S5/12
摘要： A semiconductor laser device comprising a GaAlAs first cladding layer, a Ga.sub.1-x Al.sub.x As (0.ltoreq.x.ltoreq.0.4) active layer for laser oscillation, an In.sub.1-y Ga.sub.y P.sub.1-z As.sub.z (z=2.04y-1.04, and 0.ltoreq.z.ltoreq.1) optical guiding layer with a diffraction grating thereon, a GaAlAs buffer layer disposed between said active layer and said optical guiding layer, and a GaAlAs second cladding layer, the width of the forbidden band of said buffer layer being greater than that of the active layer and smaller than that of the optical guiding layer.
摘要翻译：包括GaAlAs第一包层，用于激光振荡的Ga1-xAlxAs（0≤x≤0.4）有源层，In1-yGayP1-zAsz（z = 2.04y-1.04和0）的半导体激光器件， = z 1）具有衍射光栅的光导层，设置在所述有源层和所述光导层之间的GaAlAs缓冲层和GaAlAs第二包层，所述缓冲层的禁带的宽度更大比活性层的厚度小，而且比光导层的面积小。

8. 发明授权

US4745615A Semiconductor laser device with a diffraction grating 失效
$Semiconductor laser device with a diffraction grating$
标题翻译：具有衍射光栅的半导体激光器件
公开(公告)号：US4745615A
公开(公告)日：1988-05-17
申请号：US789787
申请日：1985-10-21
申请人： Shinji Kaneiwa , Haruhisa Takiguchi , Toshihiko Yoshida , Sadayoshi Matsui
发明人： Shinji Kaneiwa , Haruhisa Takiguchi , Toshihiko Yoshida , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/042 , H01S5/12 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/32308 , H01S5/12 , H01S5/3211
摘要： A semiconductor laser device for laser oscillation at a wavelength in the range of from 660 nm to 890 nm which includes an active layer of Ga.sub.1-x Al.sub.x As (0.ltoreq.x.ltoreq.0.4) or In.sub.1-y Ga.sub.y P.sub.1-z As.sub.z (0.51.ltoreq.y.ltoreq.1, 0.ltoreq.z.ltoreq.1, and z=2.04y-1.04) and a layer with a diffraction grating thereon of In.sub.1-y Ga.sub.y P.sub.1-z As (z=2.04y-1.04) which is adjacent to the active layer.
摘要翻译：用于在660nm至890nm范围内的波长的激光振荡的半导体激光器件，其包括Ga1-xAlxAs（0≤x≤0.4）或In1-yGayP1-zAsz有效层（0.51 < = y 1 = 0,0 / z = 1，z = 2.04y-1.04）和其上具有In1-yGayP1-zAs（z = 2.04y-1.04）的衍射光栅的层，其相邻到活动层。

9. 发明授权

US4806454A Method for the formation of a diffraction grating 失效
$Method for the formation of a diffraction grating$
标题翻译：用于形成衍射光栅的方法
公开(公告)号：US4806454A
公开(公告)日：1989-02-21
申请号：US65145
申请日：1987-06-24
申请人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Sadayoshi Matsui
IPC分类号： G02B5/18 , G02B5/32 , G02B6/124 , H01S5/00 , H01S5/12 , G03C5/00
CPC分类号： H01S5/12 , G02B5/1857 , G02B5/32 , G02B6/124 , H01S5/124 , Y10S359/90
摘要： A method for the formation of a diffraction grating on a substrate using a holographic technique and an etching technique, wherein the periodicity of the pattern of the diffraction grating can be changed at will by a change of the light-path length of one of the two light fluxes from a holographic exposing system.
摘要翻译：一种使用全息技术和蚀刻技术在基板上形成衍射光栅的方法，其中衍射光栅的图案的周期可以随意地通过两个中的一个的光路长度的变化而改变来自全息曝光系统的光通量。

10. 发明授权

US4803690A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4803690A
公开(公告)日：1989-02-07
申请号：US839869
申请日：1986-03-13
申请人： Haruhisa Takiguchi , Shinji Kaneiwa , Toshihiko Yoshida , Sadayoshi Matsui
发明人： Haruhisa Takiguchi , Shinji Kaneiwa , Toshihiko Yoshida , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/12 , H01S3/09 , H01S3/08
CPC分类号： H01S5/12 , H01S5/1215
摘要： A semiconductor laser comprising a triple-layered structure composed of an active layer for laser oscillation and a pair of optical guiding layers sandwiching said active layer therebetween, wherein the refractive index of each of said optical guiding layers is smaller than that of said active layer, and the bandgap of each of said optical guiding layers is greater than that of said active layer, and moreover diffraction gratings with different pitches are positioned on the outer side of each of said optical guiding layers.
摘要翻译：一种半导体激光器，包括由用于激光振荡的有源层组成的三层结构和夹在其间的所述有源层的一对光导层，其中每个所述光导层的折射率小于所述有源层的折射率，并且每个所述光导层的带隙大于所述有源层的带隙，此外，具有不同间距的衍射光栅位于每个所述光导层的外侧。

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