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    • 2. 发明授权
    • Optical deflection element
    • 光学偏转元件
    • US06768575B2
    • 2004-07-27
    • US10391570
    • 2003-03-20
    • Toshihiko BabaTakeharu Tani
    • Toshihiko BabaTakeharu Tani
    • G02F100
    • B82Y20/00G02B6/1225
    • An optical deflection element for splitting light rays in accordance with a wavelength of incident light, includes a photonic crystal having an entrance end face and an exit end face, and having a refractive index which periodically changes depending upon positions thereof. The optical deflection element includes a region in which a propagation angle &thgr;C of the incident light within the photonic crystal changes in accordance with the wavelength of the incident light having entered at an incident angle &thgr;IN into the entrance end face, and a relationship among a wavelength &lgr; of the incident light in vacuum, a lattice constant A of the photonic crystal, the incident angle &thgr;IN and the propagation angle &thgr;C satisfies (∂&thgr;C/∂(A/&lgr;))/(∂&thgr;C/∂&thgr;IN)>10.
    • 用于根据入射光的波长分裂光线的光学偏转元件包括具有入射端面和出射端面的光子晶体,并且具有根据其位置周期性地变化的折射率。 光偏转元件包括其中光子晶体内的入射光的传播角θC根据入射角θIN入入入射端的入射光的波长而变化的区域,以及波长 真空中入射光的λ,光子晶体的晶格常数A,入射角θIN和传播角θC满足(∂thetaC/∂(A /λ))/(∂thetaC/∂thetaIN)> 10。
    • 8. 发明申请
    • Solid state imaging device
    • 固态成像装置
    • US20070145241A1
    • 2007-06-28
    • US11644943
    • 2006-12-26
    • Takeharu Tani
    • Takeharu Tani
    • H01L27/00
    • H01L27/14818H01L27/14627
    • A solid state imaging device has a semiconductor substrate with photodiodes and charge transfer sections formed thereon, transfer electrodes formed on the charge transfer sections across an insulating layer, and a light shielding layer to protect the charge transfer sections from light. The light shielding layer has openings to correspond the positions of the photodiodes. Disposed above the openings of the light shielding layer are microlenses, and a converging structure such as a converging lens is provided inside each opening. Incident light rays from the microlens are focused toward the photodiode effectively by the converging lens.
    • 固态成像装置具有形成有光电二极管和电荷转移部分的半导体衬底,形成在跨越绝缘层的电荷转移部分上的转移电极和用于保护电荷转移部分免受光照的遮光层。 遮光层具有与光电二极管的位置对应的开口。 设置在遮光层的开口上方的是微透镜,并且在每个开口内部设置会聚透镜等会聚结构。 来自微透镜的入射光线通过会聚透镜有效地朝向光电二极管聚焦。
    • 9. 发明授权
    • Sensor, sensing system and sensing method
    • 传感器,传感系统和传感方法
    • US08023115B2
    • 2011-09-20
    • US12306122
    • 2007-06-22
    • Masayuki NayaTakeharu Tani
    • Masayuki NayaTakeharu Tani
    • G01N21/55
    • G01N21/553
    • A sensor is an optical resonator constituted by: a first reflecting body that exhibits semi transmissivity/semi reflectivity; a transparent body; and a second reflecting body that exhibits one of reflectivity and semi transmissivity/semi reflectivity, provided in this order from the light incident side. The sensor is configured such that the absorption peak of the measuring light beam by resonance in the optical resonator matches the absorption peak of the measuring light beam by local plasmon resonance generated at the surface and/or within the optical resonator. The sensor has absorption properties such that light of specific wavelengths are absorbed depending the mean complex refractive indices of the first and second reflecting bodies and the thickness of the transparent body. An emitted light beam is output from the first reflecting body. The physical properties of the emitted light beam that change according to the absorption properties are detected.
    • 传感器是由以下部件组成的光谐振器:具有半透射/半反射率的第一反射体; 透明的身体 以及从光入射侧依次设置的具有反射率和半透射率/半反射率之一的第二反射体。 传感器被配置为使得光学谐振器中的谐振测量光束的吸收峰值与通过在表面和/或光谐振器内产生的局部等离子体共振来匹配测量光束的吸收峰。 传感器具有吸收特性,使得根据第一和第二反射体的平均复折射率和透明体的厚度吸收特定波长的光。 发射光束从第一反射体输出。 检测根据吸收特性而变化的发射光束的物理性质。