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1. 发明授权

US5721601A Display units having two insolating films and a planarizing film and process for producing the same 失效
标题翻译：具有两个绝缘膜和平面化膜的显示单元及其制造方法
公开(公告)号：US5721601A
公开(公告)日：1998-02-24
申请号：US532484
申请日：1995-09-22
申请人： Toshifumi Yamaji , Kou Masahara , Nobuhiko Oda , Koji Suzuki , Shiro Nakanishi , Hisashi Abe , Kiyoshi Yoneda , Yoshihiro Morimoto
发明人： Toshifumi Yamaji , Kou Masahara , Nobuhiko Oda , Koji Suzuki , Shiro Nakanishi , Hisashi Abe , Kiyoshi Yoneda , Yoshihiro Morimoto
IPC分类号： G02F1/1343 , G02F1/1333 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L29/786
CPC分类号： G02F1/136227 , G02F2001/133357
摘要： A liquid crystal display unit is described, which includes a first substrate, a second substrate opposing to the first substrate, pixel driving elements, first and second insulation layers, a planarizing film and a liquid crystal layer. The pixel driving elements are disposed on the first substrate and between the first and second substrates. The first insulation layer is deposited over the first substrate and the pixel driving elements. The planarizing film is formed on the first insulation layer. This planarizing film provides a substantially flat surface over the first substrate to minimize a height of a step present between an area corresponding to each pixel driving element and an area locating adjacent to the pixel driving element on the first substrate. The second insulation layer is formed on the planarizing film. The display electrodes are formed on the second insulation layer and electrically connected to the pixel driving elements, respectively. The liquid crystal layer is located between the first substrate and said second substrate.
摘要翻译：描述了一种液晶显示单元，其包括第一基板，与第一基板相对的第二基板，像素驱动元件，第一和第二绝缘层，平坦化膜和液晶层。像素驱动元件设置在第一基板上并且在第一和第二基板之间。第一绝缘层沉积在第一衬底和像素驱动元件上。平坦化膜形成在第一绝缘层上。该平坦化膜在第一基板上提供基本上平坦的表面，以使在与每个像素驱动元件相对应的区域和与第一基板上的像素驱动元件相邻定位的区域之间存在的台阶的高度最小化。第二绝缘层形成在平坦化膜上。显示电极分别形成在第二绝缘层上并与像素驱动元件电连接。液晶层位于第一基板和第二基板之间。

2. 发明授权

US5707882A Semiconductor device for display device using thin film transistors and process of manufacturing the same 失效
标题翻译：用于使用薄膜晶体管的显示装置的半导体器件及其制造方法
公开(公告)号：US5707882A
公开(公告)日：1998-01-13
申请号：US376795
申请日：1995-01-23
申请人： Hiroki Hamada , Kiichi Hirano , Nobuhiro Gouda , Hisashi Abe , Eiji Taguchi , Nobuhiko Oda , Yoshihiro Morimoto
发明人： Hiroki Hamada , Kiichi Hirano , Nobuhiro Gouda , Hisashi Abe , Eiji Taguchi , Nobuhiko Oda , Yoshihiro Morimoto
IPC分类号： G02F1/1362 , H01L21/20 , H01L21/336 , H01L27/12 , H01L29/78 , H01L29/786 , H01L21/84 , H01L21/265
CPC分类号： H01L29/66757 , H01L21/2022 , H01L27/12 , G02F1/13454
摘要： A method of manufacturing a polycrystalline silicon film having a particular field effect mobility is disclosed. A first polycrystalline silicon film is formed on a transparent insulation substrate. The surface of the silicon film is oxidized, and an amorphous silicon film is formed on the first polycrystalline silicon film and oxide layer. The amorphous silicon film is subjected to a solid phase growth process to be converted to a second polycrystalline silicon film. The field effect mobility of the second polycrystalline silicon film can be adjusted to a desired value by controlling the relative thicknesses of the first and second polycrystalline silicon films.
摘要翻译：公开了制造具有特定场效应迁移率的多晶硅膜的方法。在透明绝缘基板上形成第一多晶硅膜。硅膜的表面被氧化，在第一多晶硅膜和氧化物层上形成非晶硅膜。将非晶硅膜进行固相生长工艺以转变为第二多晶硅膜。通过控制第一和第二多晶硅膜的相对厚度，可以将第二多晶硅膜的场效应迁移率调整到期望值。

3. 发明授权

US06288412B1 Thin film transistors for display devices having two polysilicon active layers of different thicknesses 失效
标题翻译：用于具有不同厚度的两个多晶硅有源层的显示器件的薄膜晶体管
公开(公告)号：US06288412B1
公开(公告)日：2001-09-11
申请号：US08974746
申请日：1997-11-19
申请人： Hiroki Hamada , Kiichi Hirano , Nobuhiro Gouda , Hisashi Abe , Eiji Taguchi , Nobuhiko Oda , Yoshihiro Morimoto
发明人： Hiroki Hamada , Kiichi Hirano , Nobuhiro Gouda , Hisashi Abe , Eiji Taguchi , Nobuhiko Oda , Yoshihiro Morimoto
IPC分类号： H01L2900
CPC分类号： H01L21/02667 , G02F1/13454 , H01L21/02532 , H01L21/2022 , H01L27/12 , H01L29/66757
摘要： A method of manufacturing a polycrystalline silicon film having a particular field effect mobility is disclosed. A first polycrystalline silicon film is formed on a transparent insulation substrate. The surface of the silicon film is oxidized, and an amorphous silicon film is formed on the first polycrystalline silicon film and oxide layer. The amorphous silicon film is subjected to a solid phase growth process to be converted to a second polycrystalline silicon film. The field effect mobility of the second polycrystalline silicon film can be adjusted to a desired value by controlling the relative thicknesses of the first and second polycrystalline silicon films.
摘要翻译：公开了制造具有特定场效应迁移率的多晶硅膜的方法。在透明绝缘基板上形成第一多晶硅膜。硅膜的表面被氧化，在第一多晶硅膜和氧化物层上形成非晶硅膜。将非晶硅膜进行固相生长工艺以转变为第二多晶硅膜。通过控制第一和第二多晶硅膜的相对厚度，可以将第二多晶硅膜的场效应迁移率调整到期望值。

4. 发明授权

US08053338B2 Plasma CVD apparatus 有权
标题翻译：等离子体CVD装置
公开(公告)号：US08053338B2
公开(公告)日：2011-11-08
申请号：US12417158
申请日：2009-04-02
申请人： Shunpei Yamazaki , Toru Takayama , Mitsunori Sakama , Hisashi Abe , Hiroshi Uehara , Mika Ishiwata
发明人： Shunpei Yamazaki , Toru Takayama , Mitsunori Sakama , Hisashi Abe , Hiroshi Uehara , Mika Ishiwata
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01J37/32477 , C23C16/4401 , C23C16/5096 , Y10S438/905
摘要： In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.
摘要翻译：在等离子体CVD装置中，防止了不必要的放电，例如电弧放电，由于附着在反应室上的膜的剥离引起的颗粒的量减少，并且在该设备的工作时间内有助于生产的时间的百分比增加同时保持设备的扩大和易于加工的性能。等离子体CVD装置被构造成使得在具有电源113，真空排气装置118和反应气体引入管114的导电反应室104中，在由电极111围绕的空间中产生等离子体115，衬底保持器 112和绝缘体120。

5. 发明授权

US07150669B2 Electroluminescent panel and a manufacturing method therefor 有权
标题翻译：电致发光面板及其制造方法
公开(公告)号：US07150669B2
公开(公告)日：2006-12-19
申请号：US10378661
申请日：2003-03-05
申请人： Hisashi Abe , Koji Suzukii , Isao Hasegawa
发明人： Hisashi Abe , Koji Suzukii , Isao Hasegawa
IPC分类号： H01J9/00 , H01J9/38 , H05B33/10
CPC分类号： H01L27/3246 , H01L29/4908 , H01L51/5253
摘要： A second planarization insulating layer disposed under an organic EL layer is heat-treated so as to bring the moisture content thereof to an extremely low level. By lowering this moisture content to 77 ng/cm3 or below, an organic EL panel can be realized where the degradation of luminescence characteristics is minimized. As an alternative method of reducing the adverse effect of moisture content on the organic EL layer, a reforming processing or coating processing may be performed on the second planarization insulating layer.
摘要翻译：将设置在有机EL层下方的第二平坦化绝缘层进行热处理，使其含水量达到极低水平。通过将该水分含量降低至77ng / cm 3以下，可以实现发光特性降低最小化的有机EL面板。作为减少水分含量对有机EL层的不利影响的替代方法，可以在第二平坦化绝缘层上进行重整处理或涂布处理。

6. 发明申请

US20080156399A1 High-Concentration Carburized/Low-Strain Quenched Member and Process for Producing the Same 审中-公开
标题翻译：高浓度渗碳/低应变淬火构件及其生产方法
公开(公告)号：US20080156399A1
公开(公告)日：2008-07-03
申请号：US11883793
申请日：2006-02-08
申请人： Isao Machida , Hisashi Abe , Toshio Fukushima , Koji Horikiri
发明人： Isao Machida , Hisashi Abe , Toshio Fukushima , Koji Horikiri
IPC分类号： C23C8/22
CPC分类号： C23C8/22 , C21D1/06 , C21D1/78 , C21D6/002 , C21D9/00 , C21D2211/003 , C22C38/02 , C22C38/04 , C22C38/22 , C23C8/80
摘要： A super carburized, low-distortion quenched member with higher performance and minimized heat-treatment distortion is provided. A process for the production thereof includes a primary treatment and a secondary treatment. The primary treatment includes heating a steel member for a machine structure to a temperature within an austenite region by vacuum carburizing (low-pressure carburizing) to have carbon dissolved at least at a eutectoid carbon concentration of a surface layer portion of the member and then quenching the member to have at least one of ultrafine carbide and nuclei of the carbide formed in the surface layer portion of the member. The secondary treatment includes subsequently heating and soaking the member to a temperature within the austenite region and then conducting rapid quenching to have ultrafine carbide precipitated in an outermost surface layer portion.
摘要翻译：提供了具有更高性能和最小化热处理变形的超渗碳低失真淬火构件。其生产方法包括初级处理和二级处理。主要处理包括通过真空渗碳（低压渗碳）将机械结构的钢构件加热到奥氏体区域内的温度，使得至少在构件的表层部分的共析碳浓度上溶解碳，然后淬火所述构件具有形成在所述构件的表面层部分中的碳化物和碳化物的至少一种。二次处理包括随后将构件加热和浸泡到奥氏体区域内的温度，然后进行快速淬火以在最外表面层部分中析出超细碳化物。

7. 发明申请

US20050176221A1 Plasma CVD apparatus 有权
标题翻译：等离子体CVD装置
公开(公告)号：US20050176221A1
公开(公告)日：2005-08-11
申请号：US11102727
申请日：2005-04-11
申请人： Shunpei Yamazaki , Toru Takayama , Mitsunori Sakama , Hisashi Abe , Hiroshi Uehara , Mika Ishiwata
发明人： Shunpei Yamazaki , Toru Takayama , Mitsunori Sakama , Hisashi Abe , Hiroshi Uehara , Mika Ishiwata
IPC分类号： C23C16/44 , C23C16/50 , C23C16/509 , H01J37/32 , H01L21/31 , C25F1/00 , H01L21/20
CPC分类号： H01J37/32477 , C23C16/4401 , C23C16/5096 , Y10S438/905
摘要： In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.
摘要翻译：在等离子体CVD装置中，防止了不必要的放电，例如电弧放电，由于附着在反应室上的膜的剥离引起的颗粒的量减少，并且在该设备的工作时间内有助于生产的时间的百分比增加同时保持设备的扩大和易于加工的性能。等离子体CVD装置被构造成使得在具有电源113，真空排气装置118和反应气体引入管114的导电反应室104中，在由电极111围绕的空间中产生等离子体115，衬底保持器 112和绝缘体120。

8. 发明授权

US06482752B1 Substrate processing apparatus and method and a manufacturing method of a thin film semiconductor device 失效
标题翻译：基板处理装置及方法以及薄膜半导体装置的制造方法
公开(公告)号：US06482752B1
公开(公告)日：2002-11-19
申请号：US08685788
申请日：1996-07-24
申请人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
发明人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
IPC分类号： H01L21461
CPC分类号： H01L21/02686 , C23C16/303 , C23C16/345 , C23C16/402 , C23C16/54 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L21/67155 , H01L21/67207 , H01L27/1281 , H01L29/41733 , Y10S438/905 , Y10S438/908
摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.
摘要翻译：基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能，所述处理室中的至少一个具有加热功能。所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。

9. 发明授权

US06281057B1 Method of manufacturing a semiconductor device 失效
公开(公告)号：US06281057B1
公开(公告)日：2001-08-28
申请号：US09004779
申请日：1998-01-09
申请人： Yoichiro Aya , Tomoyuki Nouda , Yasuo Nakahara , Naoya Sotani , Hisashi Abe , Hiroki Hamada
发明人： Yoichiro Aya , Tomoyuki Nouda , Yasuo Nakahara , Naoya Sotani , Hisashi Abe , Hiroki Hamada
IPC分类号： H01L2184
摘要： A method is obtained of manufacturing a semiconductor device including a semiconductor layer with high field-effect mobility. According to the semiconductor device manufacturing method, a semiconductor layer is formed on a substrate and then the semiconductor layer is irradiated with high energy beam. Then, a heat treatment is provided under a temperature condition capable of reducing the surface roughness of the semiconductor layer. The radiation of high energy beam toward the semiconductor layer improves the crystalinity of the semiconductor layer and the subsequent heat treatment reduces the surface roughness of the semiconductor layer to enhance the field-effect mobility of the semiconductor layer.

10. 发明授权

US08392643B2 Data processing device, semiconductor integrated circuit device, and abnormality detection method 有权
标题翻译：数据处理装置，半导体集成电路装置及异常检测方法
公开(公告)号：US08392643B2
公开(公告)日：2013-03-05
申请号：US13034236
申请日：2011-02-24
申请人： Ryoichi Yamaguchi , Hisashi Abe
发明人： Ryoichi Yamaguchi , Hisashi Abe
IPC分类号： G06F13/24
CPC分类号： G06F13/24
摘要： A data processing device for detecting the abnormal operation of a CPU is provided. The data processing device comprises a CPU, an interrupt counter, and a counter-abnormal-value detection circuit. The interrupt counter increments a count value based on an interrupt start signal which is outputted in response to an interrupt signal indicative of an interrupt request to the CPU and which indicates that the interrupt request has been accepted, and decrements the count value based on an end-of-interrupt signal which indicates that processing corresponding to the interrupt has completed. The counter-abnormal-value detection circuit detects abnormalities by comparing the count value with a predetermined value.
摘要翻译：提供了用于检测CPU的异常操作的数据处理装置。数据处理装置包括CPU，中断计数器和反异常值检测电路。中断计数器根据中断起始信号递增计数值，该中断起始信号响应于指示中断请求的中断信号被输出到CPU，并且指示中断请求已被接受，并且基于结束递减计数值指示与中断相对应的处理完成的中断信号。反异常检测电路通过将计数值与预定值进行比较来检测异常。

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