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1. 发明申请

US20110236297A1 HEAT TREATMENT METHOD OF ZNTE SINGLE CRYSTAL SUBSTRATE AND ZNTE SINGLE CRYSTAL SUBSTRATE 审中-公开
标题翻译： ZNTE单晶基板和ZNTE单晶基板的热处理方法
公开(公告)号：US20110236297A1
公开(公告)日：2011-09-29
申请号：US13158618
申请日：2011-06-13
申请人： Toshiaki Asahi , Kenji Sato , Takayuki Shimizu
发明人： Toshiaki Asahi , Kenji Sato , Takayuki Shimizu
IPC分类号： C01B19/04
CPC分类号： C30B29/48 , C30B33/02 , H01L21/477
摘要： The present invention is to provide a heat treatment method for effectively eliminating Te deposits in a ZnTe single crystal substrate, and a ZnTe single crystal substrate having an optical characteristic suitable for use of a light modulation element and having a thickness of 1 mm or more. A heat treatment method of a ZnTe single crystal substrate, includes: a first step of increasing a temperature the ZnTe single crystal substrate to a first heat treatment temperature T1, and retaining the temperature of the substrate for a predetermined time; and a second step of gradually reducing the temperature of the substrate from the first heat treatment temperature T1 to a second heat treatment temperature T2 lower than the heat treatment temperature T1 with a predetermined rate, wherein the first heat treatment temperature T1 is set in a range of 700° C.≦T1≦1250° C. and the second heat treatment temperature T2 is set in a range of T2≦T1−50.
摘要翻译：本发明提供一种用于有效地消除ZnTe单晶衬底中的Te沉积物的热处理方法，以及具有适合于使用光调制元件并具有1mm以上厚度的光学特性的ZnTe单晶衬底。 ZnTe单晶衬底的热处理方法包括：将ZnTe单晶衬底的温度提高到第一热处理温度T1并将衬底的温度保持预定时间的第一步骤; 以及以预定的速率逐渐将基板的温度从第一热处理温度T1逐渐降低到低于热处理温度T1的第二热处理温度T2的第二步骤，其中第一热处理温度T1设定在一定范围内的温度为700℃，N 2; T1＆nlE; 1250℃，第二热处理温度T2设定在T2＆lt; 1N; T1-50的范围内。

2. 发明申请

US20090042002A1 Heat Treatment Method of ZnTe Single Crystal Substrate and ZnTe Single Crystal Substrate 有权
标题翻译： ZnTe单晶基板和ZnTe单晶基板的热处理方法
公开(公告)号：US20090042002A1
公开(公告)日：2009-02-12
申请号：US11988755
申请日：2006-07-18
申请人： Toshiaki Asahi , Kenji Sato , Takayuki Shimizu
发明人： Toshiaki Asahi , Kenji Sato , Takayuki Shimizu
IPC分类号： B32B5/00 , H01L21/263
CPC分类号： C30B29/48 , C30B33/02 , H01L21/477
摘要： The present invention is to provide a heat treatment method for effectively eliminating Te deposits in a ZnTe single crystal substrate, and a ZnTe single crystal substrate having an optical characteristic suitable for use of a light modulation element and having a thickness of 1 mm or more. A heat treatment method of a ZnTe single crystal substrate, includes: a first step of increasing a temperature the ZnTe single crystal substrate to a first heat treatment temperature T1, and retaining the temperature of the substrate for a predetermined time; and a second step of gradually reducing the temperature of the substrate from the first heat treatment temperature T1 to a second heat treatment temperature T2 lower than the heat treatment temperature T1 with a predetermined rate, wherein the first heat treatment temperature T1 is set in a range of 700° C.≦T1≦1250° C. and the second heat treatment temperature T2 is set in a range of T2≦T1−50.
摘要翻译：本发明提供一种用于有效地消除ZnTe单晶衬底中的Te沉积物的热处理方法，以及具有适合于使用光调制元件并具有1mm以上厚度的光学特性的ZnTe单晶衬底。 ZnTe单晶衬底的热处理方法包括：将ZnTe单晶衬底的温度提高到第一热处理温度T1并将衬底的温度保持预定时间的第一步骤; 以及以预定的速率逐渐将基板的温度从第一热处理温度T1逐渐降低到低于热处理温度T1的第二热处理温度T2的第二步骤，其中第一热处理温度T1设定在一定范围内 700℃，<= T1 <= 1250℃，第二热处理温度T2设定在T2 <= T1-50的范围内。

3. 发明授权

US08476171B2 Heat treatment method of ZnTe single crystal substrate and ZnTe single crystal substrate 有权
标题翻译： ZnTe单晶衬底和ZnTe单晶衬底的热处理方法
公开(公告)号：US08476171B2
公开(公告)日：2013-07-02
申请号：US11988755
申请日：2006-07-18
申请人： Toshiaki Asahi , Kenji Sato , Takayuki Shimizu
发明人： Toshiaki Asahi , Kenji Sato , Takayuki Shimizu
IPC分类号： H01L21/00
CPC分类号： C30B29/48 , C30B33/02 , H01L21/477
摘要： The present invention is to provide a heat treatment method for effectively eliminating Te deposits in a ZnTe single crystal substrate, and a ZnTe single crystal substrate having an optical characteristic suitable for use of a light modulation element and having a thickness of 1 mm or more. A heat treatment method of a ZnTe single crystal substrate, includes: a first step of increasing a temperature the ZnTe single crystal substrate to a first heat treatment temperature T1, and retaining the temperature of the substrate for a predetermined time; and a second step of gradually reducing the temperature of the substrate from the first heat treatment temperature T1 to a second heat treatment temperature T2 lower than the heat treatment temperature T1 with a predetermined rate, wherein the first heat treatment temperature T1 is set in a range of 700° C.≦T1≦1250° C. and the second heat treatment temperature T2 is set in a range of T2≦T1−50.
摘要翻译：本发明提供一种用于有效地消除ZnTe单晶衬底中的Te沉积物的热处理方法，以及具有适合于使用光调制元件并具有1mm以上厚度的光学特性的ZnTe单晶衬底。 ZnTe单晶衬底的热处理方法包括：将ZnTe单晶衬底的温度提高到第一热处理温度T1并将衬底的温度保持预定时间的第一步骤; 以及以预定的速率逐渐将基板的温度从第一热处理温度T1逐渐降低到低于热处理温度T1的第二热处理温度T2的第二步骤，其中第一热处理温度T1设定在一定范围内在T1 @ 1250℃下为700℃，第二热处理温度T2设定在T2 @ T1-50的范围内。

4. 发明授权

US07696073B2 Method of co-doping group 14 (4B) elements to produce ZnTe system compound semiconductor single crystal 失效
标题翻译：共组14（4B）元素制备ZnTe系化合物半导体单晶的方法
公开(公告)号：US07696073B2
公开(公告)日：2010-04-13
申请号：US11984943
申请日：2007-11-26
申请人： Tetsuya Yamamoto , Atsutoshi Arakawa , Kenji Sato , Toshiaki Asahi
发明人： Tetsuya Yamamoto , Atsutoshi Arakawa , Kenji Sato , Toshiaki Asahi
IPC分类号： H01L21/38 , H01L29/22 , H01L31/0296
CPC分类号： C30B29/48 , C30B23/002 , C30B25/02 , H01L21/02411 , H01L21/0248 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02623 , H01L21/02631 , H01L29/227 , H01L33/285
摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.
摘要翻译：本发明涉及一种具有高载流子浓度和低电阻率的n型ZnTe系化合物半导体单晶的制造方法，ZnTe系化合物半导体单晶以及使用ZnTe系化合物半导体作为基底制造的半导体装置会员。具体地，第一掺杂剂和第二掺杂剂共掺杂到ZnTe系化合物半导体单晶中，使得第二掺杂剂的原子数小于第一掺杂剂的原子数，第一掺杂剂用于控制 ZnTe系化合物半导体的导电类型为第一导电类型，第二掺杂剂用于将导电类型控制为不同于第一导电类型的第二导电类型。通过本发明，可以实现与早期技术相比更小的掺杂量的所需载流子浓度，并且可以提高所得晶体的结晶度。

5. 发明授权

US07629625B2 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device 失效
标题翻译：制备ZnTe系化合物半导体单晶，ZnTe系化合物半导体单晶及半导体器件的方法
公开(公告)号：US07629625B2
公开(公告)日：2009-12-08
申请号：US11984944
申请日：2007-11-26
申请人： Tetsuya Yamamoto , Atsutoshi Arakawa , Kenji Sato , Toshiaki Asahi
发明人： Tetsuya Yamamoto , Atsutoshi Arakawa , Kenji Sato , Toshiaki Asahi
IPC分类号： H01L21/00
CPC分类号： C30B29/48 , C30B23/002 , C30B25/02 , H01L21/02411 , H01L21/0248 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02623 , H01L21/02631 , H01L29/227 , H01L33/285
摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.
摘要翻译：本发明涉及一种具有高载流子浓度和低电阻率的n型ZnTe系化合物半导体单晶的制造方法，ZnTe系化合物半导体单晶以及使用ZnTe系化合物半导体作为基底制造的半导体装置会员。具体地，第一掺杂剂和第二掺杂剂共掺杂到ZnTe系化合物半导体单晶中，使得第二掺杂剂的原子数小于第一掺杂剂的原子数，第一掺杂剂用于控制 ZnTe系化合物半导体的导电类型为第一导电类型，第二掺杂剂用于将导电类型控制为不同于第一导电类型的第二导电类型。通过本发明，可以实现与早期技术相比掺杂量小的期望载流子浓度，并且可以提高所得晶体的结晶度。

6. 发明申请

US20080090327A1 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device 失效
公开(公告)号：US20080090327A1
公开(公告)日：2008-04-17
申请号：US11984941
申请日：2007-11-26
申请人： Tetsuya Yamamoto , Atsutoshi Arakawa , Kenji Sato , Toshiaki Asahi
发明人： Tetsuya Yamamoto , Atsutoshi Arakawa , Kenji Sato , Toshiaki Asahi
IPC分类号： H01L21/06
CPC分类号： C30B29/48 , C30B23/002 , C30B25/02 , H01L21/02411 , H01L21/0248 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02623 , H01L21/02631 , H01L29/227 , H01L33/285
摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

7. 发明授权

US07521282B2 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device 失效
公开(公告)号：US07521282B2
公开(公告)日：2009-04-21
申请号：US11984942
申请日：2007-11-26
申请人： Tetsuya Yamamoto , Atsutoshi Arakawa , Kenji Sato , Toshiaki Asahi
发明人： Tetsuya Yamamoto , Atsutoshi Arakawa , Kenji Sato , Toshiaki Asahi
IPC分类号： H01L21/00
CPC分类号： C30B29/48 , C30B23/002 , C30B25/02 , H01L21/02411 , H01L21/0248 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02623 , H01L21/02631 , H01L29/227 , H01L33/285
摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

8. 发明申请

US20080090386A1 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device 失效
公开(公告)号：US20080090386A1
公开(公告)日：2008-04-17
申请号：US11984943
申请日：2007-11-26
申请人： Tetsuya Yamamoto , Atsutoshi Arakawa , Kenji Sato , Toshiaki Asahi
发明人： Tetsuya Yamamoto , Atsutoshi Arakawa , Kenji Sato , Toshiaki Asahi
IPC分类号： H01L21/20
CPC分类号： C30B29/48 , C30B23/002 , C30B25/02 , H01L21/02411 , H01L21/0248 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02623 , H01L21/02631 , H01L29/227 , H01L33/285
摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

9. 发明授权

US06334897B1 Method of manufacturing compound semiconductor single crystal 失效
标题翻译：制造化合物半导体单晶的方法
公开(公告)号：US06334897B1
公开(公告)日：2002-01-01
申请号：US09424794
申请日：1999-11-30
申请人： Toshiaki Asahi , Keiji Kainosho , Tatsuya Nozaki , Kenji Sato
发明人： Toshiaki Asahi , Keiji Kainosho , Tatsuya Nozaki , Kenji Sato
IPC分类号： C30B1314
CPC分类号： C30B29/46 , C30B11/00 , C30B11/002 , C30B11/003 , C30B29/40 , C30B29/48
摘要： A method for producing a compound semiconductor single crystal, comprises the steps of: using a crucible having a bottom, a cylindrical shape, a diameter increasing portion having a reversed conical shape in a lower end side of the crucible, and a set portion for a seed crystal in a center of the bottom of the diameter increasing portion; setting a seed crystal in the seed crystal set portion of the crucible; putting a raw material of the compound semiconductor and an encapsulating material into the crucible; enclosing the crucible in an inner container; thereafter setting the inner container in a vertical type furnace; heating the raw material and the encapsulating material by a heating means to melt; and solidifying the obtained raw material melt from the seed crystal toward an upper side with annealing the raw material melt from a lower side to grow a single crystal of the compound semiconductor; wherein a rate of crystal growth at the diameter increasing portion of the crucible is made not less than 20 mm/hr during the crystal is grown.
摘要翻译：一种制备化合物半导体单晶的方法，包括以下步骤：使用具有底部，圆筒形状的坩埚，在坩埚的下端侧具有倒锥形的直径增加部分，以及用于种子晶体在直径增加部分的底部的中心; 将晶种设置在坩埚的晶种组合部分中; 将化合物半导体的原料和封装材料放入坩埚中; 将坩埚封闭在内部容器中; 然后将内容器设置在立式炉中; 通过加热装置加热原料和包封材料以熔化; 并且通过从下侧退火原料熔体而将获得的原料熔体从晶种固化到上侧，以生长化合物半导体的单晶; 其中在晶体生长期间，在坩埚的直径增加部分处的晶体生长速率不小于20mm / hr。

10. 发明授权

US07517720B2 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device 失效
公开(公告)号：US07517720B2
公开(公告)日：2009-04-14
申请号：US11984941
申请日：2007-11-26
申请人： Tetsuya Yamamoto , Atsutoshi Arakawa , Kenji Sato , Toshiaki Asahi
发明人： Tetsuya Yamamoto , Atsutoshi Arakawa , Kenji Sato , Toshiaki Asahi
IPC分类号： H01L21/00
CPC分类号： C30B29/48 , C30B23/002 , C30B25/02 , H01L21/02411 , H01L21/0248 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02623 , H01L21/02631 , H01L29/227 , H01L33/285
摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

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