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    • 5. 发明授权
    • Resist composition and pattern-forming method using the same
    • 抗蚀剂组合物和使用其的图案形成方法
    • US07989137B2
    • 2011-08-02
    • US12238856
    • 2008-09-26
    • Shuji HiranoKazuyoshi MizutaniShinichi SugiyamaJiro Yokoyama
    • Shuji HiranoKazuyoshi MizutaniShinichi SugiyamaJiro Yokoyama
    • G03F7/039G03F7/20G03F7/30
    • G03F7/0392G03F7/0397Y10S430/106Y10S430/111
    • A resist composition includes (A) a resin including: a repeating unit capable of decomposing by the action of an acid to increase solubility in an alkali developing solution and represented by formula (I), and a repeating unit represented by formula (II); and (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation: wherein A represents a hydrogen atom, an alkyl group, a hydroxyl group, an alkoxyl group, a halogen atom, a cyano group, a nitro group, an acyl group, an acyloxy group, a cycloalkyl group, an aryl group, a carboxyl group, an alkyloxycarbonyl group, an alkylcarbonyloxy group, or an aralkyl group; Ra represents a group containing a group capable of decomposing by the action of an acid; Rb represents an alkylene group, a cycloalkylene group, or a group of combining these groups; Y represents a heterocyclic group; and m represents 0 or 1.
    • 抗蚀剂组合物包括(A)树脂,其包含:能够通过酸的分解而分解的碱性显影液中的溶解度并由式(I)表示的重复单元和由式(II)表示的重复单元的重复单元; 和(B)能够在用光化射线或辐射照射时能够产生酸的化合物:其中A表示氢原子,烷基,羟基,烷氧基,卤素原子,氰基,硝基, 酰基,酰氧基,环烷基,芳基,羧基,烷氧基羰基,烷基羰基氧基或芳烷基; Ra表示含有能够通过酸的作用分解的基团的基团; Rb表示亚烷基,亚环烷基或组合这些基团的基团; Y表示杂环基; m表示0或1。