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1. 发明授权

US5475244A MIS transistor having second conductivity type source and drain regions sandwiching a channel region of a first conductivity type of a first semiconductor material formed on an insulating substrate, and a gate electrode formed on a main surface 失效
标题翻译： MIS晶体管具有第二导电类型的源极和漏极区域，其夹着形成在绝缘基板上的第一半导体材料的第一导电类型的沟道区域和形成在沟道区域的主表面上的栅电极
公开(公告)号：US5475244A
公开(公告)日：1995-12-12
申请号：US37681
申请日：1993-03-24
申请人： Toru Koizumi , Hidemasa Mizutani , Masakazu Morishita
发明人： Toru Koizumi , Hidemasa Mizutani , Masakazu Morishita
IPC分类号： H01L27/12 , H01L21/336 , H01L29/78 , H01L29/786 , H01L31/072 , H01L27/01 , H01L29/04 , H01L31/117
CPC分类号： H01L29/66772 , H01L29/78618 , H01L29/78621
摘要： An MIS transistor has a channel portion of a first conduction type of first semiconductor material formed on an insulating substrate, second conduction type source and drain regions sandwiching said channel portion therebetween, and a gate electrode formed on a main surface of the channel portion with an insulating film therebetween, wherein the source region is made of the first semiconductor material and a second semiconductor material having an energy band gap smaller than that of the first semiconductor material and a heterojunction between the first and second semiconductor materials is provided outside of a depletion layer region formed in the junction between the source and channel portions, and inside a diffusion length L.sub.d from a depletion edge.
摘要翻译： MIS晶体管具有形成在绝缘基板上的第一导电类型的第一半导体材料的沟道部分，夹在其间的所述沟道部分的第二导电型源极和漏极区域，以及形成在沟道部分的主表面上的栅电极，其间源区域由第一半导体材料制成，第二半导体材料的能带隙小于第一半导体材料的能带隙，第一和第二半导体材料之间的异质结设置在耗尽层的外侧在源极和沟道部分之间的接合处形成的区域，以及从耗尽边缘的扩散长度Ld内部。

2. 发明授权

US5410172A Thin film transistor and preparation thereof 失效
标题翻译：薄膜晶体管及其制备方法
公开(公告)号：US5410172A
公开(公告)日：1995-04-25
申请号：US996887
申请日：1992-12-23
申请人： Toru Koizumi , Jun Nakayama , Hidemasa Mizutani
发明人： Toru Koizumi , Jun Nakayama , Hidemasa Mizutani
IPC分类号： H01L27/12 , G02F1/136 , G02F1/1368 , H01L21/265 , H01L21/336 , H01L27/146 , H01L29/06 , H01L29/08 , H01L29/78 , H01L29/786
CPC分类号： H01L29/6678 , H01L21/26586 , H01L29/0657 , H01L29/0847 , H01L29/66772 , H01L29/78 , H01L29/7836 , H01L29/78618 , H01L29/78621 , H01L29/78624 , H01L29/78627 , H01L29/78657
摘要： A thin film transistor is provided with a semiconductor layer disposed on an insulating layer region having a channel region and a plurality of main electrode regions having an impurity concentration higher than an impurity concentration of the channel region. A second insulating layer region is disposed on the semiconductor region layer, and a control electrode is disposed on the second insulating layer. An interface is defined between at least one of the main electrode regions and the channel regions through a thickness of the semiconductor layer becoming increasing remote from its side of the control electrode in the direction from the second insulating layer region toward the first insulating layer region. An original point is defined as a position of the interface immediately beneath the insulating layer region. When a layer thickness of the semiconductor region is defined as T.sub.SOI and a maximum distance of the semiconductor layer region in the direction normal to a layer thickness is defined as L.sub.UP a value, the ratio of L.sub.UP /T.sub.SOI is at least 0.35.
摘要翻译：薄膜晶体管设置有设置在具有沟道区域和具有高于沟道区域的杂质浓度的杂质浓度的多个主电极区域的绝缘层区域上的半导体层。第二绝缘层区域设置在半导体区域层上，并且控制电极设置在第二绝缘层上。通过半导体层的厚度，在从第二绝缘层区域朝向第一绝缘层区域的方向远离其控制电极的侧面，在至少一个主电极区域和沟道区域之间界定界面。原点被定义为绝缘层区域正下方的界面的位置。当半导体区域的层厚被定义为TSOI，并且半导体层区域在垂直于层厚度的方向上的最大距离被定义为LUP值时，LUP / TSOI的比率至少为0.35。

3. 发明授权

US5034782A Semiconductor commutator with grain boundary 失效
标题翻译：具有晶界的半导体换向器
公开(公告)号：US5034782A
公开(公告)日：1991-07-23
申请号：US422762
申请日：1989-10-17
申请人： Toru Koizumi , Hidemasa Mizutani
发明人： Toru Koizumi , Hidemasa Mizutani
IPC分类号： H01L21/20 , H01L29/04 , H01L29/06 , H01L29/32 , H01L29/861
CPC分类号： H01L29/861 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02645 , H01L21/02647 , H01L29/04 , H01L29/0692 , H01L29/32 , Y10S438/921 , Y10S438/922
摘要： A semiconductor commutator is provided with first and second semiconductor regions joined at a junction formed therebetween. The first semiconductor region is of the first conductivity type at the second semiconductor region is of the opposite conductivity type. A grain boundary is provided near the junction and within a region, through which a carrier passes, between electrodes respectively provided on the semiconductor regions.

4. 发明授权

US5572044A Monocrystalline semiconductor commutator with grain boundry 失效
标题翻译：单晶半导体换向器与晶界
公开(公告)号：US5572044A
公开(公告)日：1996-11-05
申请号：US471161
申请日：1995-06-06
申请人： Toru Koizumi , Hidemasa Mizutani
发明人： Toru Koizumi , Hidemasa Mizutani
IPC分类号： H01L21/20 , H01L29/04 , H01L29/06 , H01L29/32 , H01L29/861 , H01L31/036
CPC分类号： H01L29/861 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02645 , H01L21/02647 , H01L29/04 , H01L29/0692 , H01L29/32 , Y10S438/921 , Y10S438/922
摘要： A semiconductor commutator which is constructed by joining a semiconductor region of the first conductivity type and a semiconductor region of the second conductivity type, wherein there is provided a grain boundary which is located near a junction surface of the semiconductor region of the first conductivity type and the semiconductor region of the second conductivity type so as not to cross said junction surface.
摘要翻译：一种半导体换向器，其通过连接第一导电类型的半导体区域和第二导电类型的半导体区域而构成，其中提供了位于第一导电类型的半导体区域的接合表面附近的晶界和所述第二导电类型的半导体区域不会穿过所述接合面。

5. 发明授权

US5616944A Diode and semiconductor device having a controlled intrinsic or low impurity concentration region between opposite conductivity type semiconductor regions 失效
标题翻译：二极管和半导体器件在相对导电型半导体区域之间具有受控的本征或低杂质浓度区域
公开(公告)号：US5616944A
公开(公告)日：1997-04-01
申请号：US348198
申请日：1994-11-28
申请人： Hidemasa Mizutani , Toru Koizumi
发明人： Hidemasa Mizutani , Toru Koizumi
IPC分类号： H01L29/68 , H01L27/06 , H01L29/739 , H01L29/861 , H01L29/76 , H01L29/94 , H01L31/075 , H01L31/105
CPC分类号： H01L27/0629 , H01L29/7391
摘要： A diode is provided comprising first and second semiconductor regions. The first semiconductor region is of one conductivity type and the second is of the opposite conductivity type. A third region is provided which is either an intrinsic semiconductor region or a low concentration region. The low concentration region has an impurity concentration lower than that of the first and second semiconductor layers. The third region is arranged to separate the first and second semiconductor regions. A control electrode region is provided over the third region through an insulative film.
摘要翻译：提供了包括第一和第二半导体区域的二极管。第一半导体区域是一种导电类型，第二半导体区域具有相反的导电类型。提供作为本征半导体区域或低浓度区域的第三区域。低浓度区域的杂质浓度低于第一和第二半导体层的杂质浓度。第三区域被布置成分离第一和第二半导体区域。通过绝缘膜在第三区域上设置控制电极区域。

6. 发明授权

US5571747A Method for producing a semiconductor commutator 失效
标题翻译：半导体换向器的制造方法
公开(公告)号：US5571747A
公开(公告)日：1996-11-05
申请号：US347164
申请日：1994-11-23
申请人： Toru Koizumi , Hidemasa Mizutani
发明人： Toru Koizumi , Hidemasa Mizutani
IPC分类号： H01L21/20 , H01L29/04 , H01L29/06 , H01L29/32 , H01L29/861
CPC分类号： H01L29/861 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02645 , H01L21/02647 , H01L29/04 , H01L29/0692 , H01L29/32 , Y10S438/921 , Y10S438/922
摘要： A semiconductor commutator which is constructed by joining a semiconductor region of the first conductivity type and a semiconductor region of the second conductivity type, wherein there is provided a grain boundary which is located near a junction surface of the semiconductor region of the first conductivity type and the semiconductor region of the second conductivity type so as not to cross said junction surface.
摘要翻译：一种半导体换向器，其通过连接第一导电类型的半导体区域和第二导电类型的半导体区域而构成，其中提供了位于第一导电类型的半导体区域的接合表面附近的晶界和所述第二导电类型的半导体区域不会穿过所述接合面。

7. 发明授权

US08619163B2 Solid state imaging using a correction parameter for correcting a cross talk between adjacent pixels 有权
标题翻译：使用用于校正相邻像素之间的串扰的校正参数的固态成像
公开(公告)号：US08619163B2
公开(公告)日：2013-12-31
申请号：US12874119
申请日：2010-09-01
申请人： Masanori Ogura , Toru Koizumi , Satoshi Koizumi
发明人： Masanori Ogura , Toru Koizumi , Satoshi Koizumi
IPC分类号： H04N5/217 , H04N9/083
CPC分类号： H04N5/359 , H04N9/045 , H04N9/646
摘要： An image processing apparatus, for correcting a cross talk between adjacent pixels, includes: a memory unit for storing a correction parameter for reducing a cross talk signal leaked to an object pixel from an adjacent pixel, the correction parameter corresponding to a position of the object pixel; and a correcting unit for subtracting, based on the correction parameter stored in the memory unit, the cross talk signal from a pixel signal of the solid-state imaging apparatus correspondingly to a position of the pixel, wherein a number of the object pixel is at least two, and the at least two object pixels have different addresses in a horizontal direction, and different addresses in a vertical direction.
摘要翻译：一种用于校正相邻像素之间的串扰的图像处理装置，包括：存储单元，用于存储用于减少从相邻像素泄漏到对象像素的串扰信号的校正参数，对应于对象位置的校正参数像素以及校正单元，用于根据存储在存储单元中的校正参数，相对于像素的位置从固态成像设备的像素信号中减去串扰信号，其中对象像素的数量在至少两个，并且所述至少两个对象像素在水平方向上具有不同的地址，并且在垂直方向上具有不同的地址。

8. 发明授权

US08520108B2 Method for driving a photoelectric conversion device with isolation switches arranged between signal lines and amplifiers 有权
标题翻译：用于驱动设置在信号线和放大器之间的隔离开关的光电转换装置的方法
公开(公告)号：US08520108B2
公开(公告)日：2013-08-27
申请号：US13085575
申请日：2011-04-13
申请人： Masanori Ogura , Toru Koizumi , Masaru Fujimura
发明人： Masanori Ogura , Toru Koizumi , Masaru Fujimura
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/378 , H04N5/3575 , H04N5/374
摘要： A photoelectric conversion device prevents a pseudo signal caused by the parasitic capacitance of a transfer switch from being input to an amplifier. A photoelectric conversion device (50) includes a pixel (10) which outputs a signal to a signal line (107), an amplifier which amplifies the signal supplied via the signal line (107), and an isolation switch (121) inserted between a signal line (108) and the input node of the amplifier. The pixel (10) includes a photodiode, a floating diffusion (FD), a transfer switch which transfers the charge of the photodiode to the FD, and an amplification transistor which outputs a signal to a signal line (109) in accordance with the potential of the FD. The isolation switch (121) is turned off at least in a period when a transfer pulse for controlling the transfer switch of the pixel (10) transits.
摘要翻译：光电转换装置防止由转印开关的寄生电容引起的伪信号被输入到放大器。光电转换装置（50）包括向信号线（107）输出信号的像素（10），放大经由信号线（107）供给的信号的放大器和插入在信号线（107）之间的隔离开关信号线（108）和放大器的输入节点。像素（10）包括光电二极管，浮动扩散（FD），将光电二极管的电荷传送到FD的转移开关，以及根据电位将信号输出到信号线（109）的放大晶体管的FD。至少在用于控制像素（10）的转印开关的转印脉冲转移的期间，隔离开关（121）截止。

9. 发明授权

US08520102B2 Solid-state imaging apparatus 失效
标题翻译：固态成像装置
公开(公告)号：US08520102B2
公开(公告)日：2013-08-27
申请号：US13075259
申请日：2011-03-30
申请人： Masanori Ogura , Yuichiro Yamashita , Toru Koizumi
发明人： Masanori Ogura , Yuichiro Yamashita , Toru Koizumi
IPC分类号： H04N9/64 , H04N3/14 , H01L27/148
CPC分类号： H04N5/378 , H03F3/45188 , H03F2203/45646 , H04N5/357
摘要： A solid-state imaging apparatus is provided that including a plurality of amplifiers each one amplifying a signal from each one of a plurality of pixels. The amplifier including first and second field effect transistors, gate electrodes of which are connected to the same voltage node (VBL); and a first wiring connected between the voltage node and the gate electrodes of the first and second field effect transistors. The first and second field effect transistors are arranged in a direction perpendicular to a direction in which the plurality of amplifiers is arranged. Material of the first wiring has a resistivity smaller than that of the gate electrodes of the first and second field effect transistors.
摘要翻译：提供一种固态成像装置，其包括多个放大器，每个放大器从多个像素中的每一个放大信号。该放大器包括第一和第二场效应晶体管，其栅电极连接到同一电压节点（VBL）; 以及连接在第一和第二场效应晶体管的电压节点和栅电极之间的第一布线。第一和第二场效应晶体管沿与多个放大器布置的方向垂直的方向排列。第一布线的材料的电阻率小于第一和第二场效应晶体管的栅电极的电阻率。

10. 发明授权

US08476102B2 Solid state image pickup device and method for manufacturing solid state image pickup device 有权
标题翻译：固体摄像装置及固态摄像装置的制造方法
公开(公告)号：US08476102B2
公开(公告)日：2013-07-02
申请号：US13029046
申请日：2011-02-16
申请人： Hideaki Takada , Toru Koizumi , Yasuo Yamazaki , Tatsuya Ryoki
发明人： Hideaki Takada , Toru Koizumi , Yasuo Yamazaki , Tatsuya Ryoki
IPC分类号： H01L21/00
CPC分类号： H01L27/14689
摘要： A method for manufacturing a solid state image pickup device including a first active region provided with a first conversion unit, a second active region provided with a second conversion unit, and a third active region adjoining the first and the second active regions with a field region therebetween and being provided with a pixel transistor, the method including the steps of ion-implanting first conductivity type impurity ions to form a semiconductor region serving as a potential barrier against the signal carriers at a predetermined depth in the third active region and ion-implanting second conductivity type impurity ions into the third active region with energy lower than the above-described ion-implantation energy.
摘要翻译：一种固态摄像装置的制造方法，其特征在于，具备设置有第一转换部的第一有源区，设置有第二转换部的第二有源区和与所述第一有源区和所述第二有源区邻接的第三有源区，并且设置有像素晶体管，所述方法包括以下步骤：离子注入第一导电型杂质离子，以形成用作第三有源区中预定深度处的信号载流子的势垒的半导体区域和离子注入第二导电型杂质离子进入第三有源区，能量低于上述离子注入能量。

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