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1. 发明授权

US08410865B2 Surface acoustic wave filter and duplexer using the same 有权
标题翻译：表面声波滤波器和双工器使用相同
公开(公告)号：US08410865B2
公开(公告)日：2013-04-02
申请号：US12827091
申请日：2010-06-30
申请人： Toru Jibu , Shoji Okamoto , Yosuke Hamaoka , Hiroyuki Nakamura
发明人： Toru Jibu , Shoji Okamoto , Yosuke Hamaoka , Hiroyuki Nakamura
IPC分类号： H03H9/15 , H01L41/04
CPC分类号： H03H9/02992 , H03H9/725
摘要： A SAW filter includes a piezoelectric body, an IDT electrode on the piezoelectric body, and signal wiring electrically connected to the IDT electrode. The signal wiring has a thickness not less than a skin depth specified based on the frequency of a signal passing through the signal wiring and the electrical conductivity of the signal wiring. As a result, the signal wiring has low propagation loss of the signal passing through it, so that the SAW filter has excellent transmission characteristics.
摘要翻译： SAW滤波器包括压电体，压电体上的IDT电极和与IDT电极电连接的信号线。信号布线的厚度不小于根据通过信号布线的信号的频率和信号布线的导电率而指定的皮肤深度。结果，信号线路的信号传播损耗低，SAW滤波器具有优异的传输特性。

2. 发明申请

US20110001578A1 SURFACE ACOUSTIC WAVE FILTER AND DUPLEXER USING THE SAME 有权
标题翻译：表面声波滤波器和使用它的双工器
公开(公告)号：US20110001578A1
公开(公告)日：2011-01-06
申请号：US12827091
申请日：2010-06-30
申请人： Toru JIBU , Shoji Okamoto , Yosuke Hamaoka , Hiroyuki Nakamura
发明人： Toru JIBU , Shoji Okamoto , Yosuke Hamaoka , Hiroyuki Nakamura
IPC分类号： H03H9/64
CPC分类号： H03H9/02992 , H03H9/725
摘要： A SAW filter includes a piezoelectric body, an IDT electrode on the piezoelectric body, and signal wiring electrically connected to the IDT electrode. The signal wiring has a thickness not less than a skin depth specified based on the frequency of a signal passing through the signal wiring and the electrical conductivity of the signal wiring. As a result, the signal wiring has low propagation loss of the signal passing through it, so that the SAW filter has excellent transmission characteristics.
摘要翻译： SAW滤波器包括压电体，压电体上的IDT电极和与IDT电极电连接的信号线。信号布线的厚度不小于根据通过信号布线的信号的频率和信号布线的导电率而指定的皮肤深度。结果，信号线路的信号传播损耗低，SAW滤波器具有优异的传输特性。

3. 发明授权

US08669832B2 Acoustic wave device and acoustic wave filter 有权
标题翻译：声波装置和声波滤波器
公开(公告)号：US08669832B2
公开(公告)日：2014-03-11
申请号：US13125633
申请日：2010-02-23
申请人： Hiroki Kamiguchi , Hidekazu Nakanishi , Yosuke Hamaoka , Shoji Okamoto , Hiroyuki Nakamura
发明人： Hiroki Kamiguchi , Hidekazu Nakanishi , Yosuke Hamaoka , Shoji Okamoto , Hiroyuki Nakamura
IPC分类号： H03H9/64 , H03H9/25 , H03H9/42
CPC分类号： H03H9/02992 , H03H3/08 , H03H9/02685 , H03H9/14517
摘要： An acoustic wave device includes an interdigital transducer (IDT) electrode and a separate electrode facing the IDT electrode. The IDT electrode includes first and second comb-shaped electrode facing each other. The first comb-shaped electrode includes a first bus bar, first interdigitated electrode fingers, and first dummy electrode fingers. The second comb-shaped electrode includes a second bus bar second interdigitated electrode fingers interdigitated with the first interdigitated electrode fingers, second dummy electrode fingers facing the first interdigitated electrode fingers, weighted parts, and a non-weighted part. The weighted parts have electrodes at spaces between the second interdigitated electrode fingers and the second dummy electrode fingers. In the non-weighted part, there is no electrode at a space out of the spaces which is closest to the separate electrode in the non-interdigitated region. This acoustic wave device prevents short circuits between the IDT electrode and the separate electrode, and provides excellent characteristics of suppressing unwanted waves.
摘要翻译：声波装置包括叉指式换能器（IDT）电极和面向IDT电极的单独电极。 IDT电极包括彼此面对的第一和第二梳状电极。第一梳状电极包括第一汇流条，第一交叉指状电极指和第一虚拟电极指。所述第二梳状电极包括与所述第一交叉指状物电极指相交叉的第二汇流条第二交叉指状电极指，所述第二虚拟电极指指向所述第一交叉指状电极指，所述加权部和非加权部。加权部分在第二交叉指状电极指和第二虚拟电极指之间的空间具有电极。在非加重部分中，在非叉指区域中最靠近分离电极的空间之外的空间中不存在电极。该声波装置防止IDT电极和分离电极之间的短路，并且提供抑制不想要的波的优良特性。

4. 发明申请

US20110193655A1 ACOUSTIC WAVE DEVICE AND ACOUSTIC WAVE FILTER 有权
标题翻译：声波设备和声波滤波器
公开(公告)号：US20110193655A1
公开(公告)日：2011-08-11
申请号：US13125633
申请日：2010-02-23
申请人： Hiroki Kamiguchi , Hidekazu Nakanishi , Yosuke Hamaoka , Shoji Okamoto , Hiroyuki Nakamura
发明人： Hiroki Kamiguchi , Hidekazu Nakanishi , Yosuke Hamaoka , Shoji Okamoto , Hiroyuki Nakamura
IPC分类号： H03H9/54
CPC分类号： H03H9/02992 , H03H3/08 , H03H9/02685 , H03H9/14517
摘要： An acoustic wave device includes an interdigital transducer (IDT) electrode and a separate electrode facing the IDT electrode. The IDT electrode includes first and second comb-shaped electrode facing each other. The first comb-shaped electrode includes a first bus bar, first interdigitated electrode fingers, and first dummy electrode fingers. The second comb-shaped electrode includes a second bus bar second interdigitated electrode fingers interdigitated with the first interdigitated electrode fingers, second dummy electrode fingers facing the first interdigitated electrode fingers, weighted parts, and a non-weighted part. The weighted parts have electrodes at spaces between the second interdigitated electrode fingers and the second dummy electrode fingers. In the non-weighted part, there is no electrode at a space out of the spaces which is closest to the separate electrode in the non-interdigitated region. This acoustic wave device prevents short circuits between the IDT electrode and the separate electrode, and provides excellent characteristics of suppressing unwanted waves.
摘要翻译：声波装置包括叉指式换能器（IDT）电极和面向IDT电极的单独电极。 IDT电极包括彼此面对的第一和第二梳状电极。第一梳状电极包括第一汇流条，第一交叉指状电极指和第一虚拟电极指。所述第二梳状电极包括与所述第一交叉指状物电极指相交叉的第二汇流条第二交叉指状电极指，所述第二虚拟电极指指向所述第一交叉指状电极指，所述加权部和非加权部。加权部分在第二交叉指状电极指和第二虚拟电极指之间的空间具有电极。在非加重部分中，在非叉指区域中最靠近分离电极的空间之外的空间中不存在电极。该声波装置防止IDT电极和分离电极之间的短路，并且提供抑制不想要的波的优良特性。

5. 发明授权

US08421307B2 Acoustic wave device 有权
标题翻译：声波装置
公开(公告)号：US08421307B2
公开(公告)日：2013-04-16
申请号：US13206660
申请日：2011-08-10
申请人： Shoji Okamoto , Takashi Inoue , Takahiro Sato , Rei Goto , Hidehito Shimizu , Toru Jibu
发明人： Shoji Okamoto , Takashi Inoue , Takahiro Sato , Rei Goto , Hidehito Shimizu , Toru Jibu
IPC分类号： H01L41/08
CPC分类号： H03H9/02637 , H03H9/02921 , H03H9/14538
摘要： An acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode, a reflector electrode, and a dummy electrode. The IDT electrode includes electrode fingers extending in a predetermined direction. The reflector electrode faces the IDT electrode across a gap. The dummy electrode is situated on a straight line extending in the predetermined direction through the gap. At least one of the distance between the dummy electrode and the IDT electrode and the distance between the dummy electrode and the reflector electrode is larger than the distance between the IDT electrode and the reflector electrode. This acoustic wave device prevents a short circuit between the IDT electrode and the reflector electrode, thereby avoiding a decrease in its yield.
摘要翻译：声波装置包括压电基板，叉指式换能器（IDT）电极，反射器电极和虚拟电极。 IDT电极包括沿预定方向延伸的电极指。反射器电极跨越间隙面对IDT电极。虚拟电极位于沿预定方向延伸穿过间隙的直线上。虚拟电极和IDT电极之间的距离和虚拟电极与反射器电极之间的距离中的至少一个大于IDT电极和反射器电极之间的距离。该声波装置防止IDT电极和反射器电极之间的短路，从而避免其产量的降低。

6. 发明申请

US20120049690A1 ACOUSTIC WAVE DEVICE 有权
标题翻译：声波设备
公开(公告)号：US20120049690A1
公开(公告)日：2012-03-01
申请号：US13206660
申请日：2011-08-10
申请人： Shoji Okamoto , Takashi Inoue , Takahiro Sato , Rei Goto , Hidehito Shimizu , Toru Jibu
发明人： Shoji Okamoto , Takashi Inoue , Takahiro Sato , Rei Goto , Hidehito Shimizu , Toru Jibu
IPC分类号： H01L41/02
CPC分类号： H03H9/02637 , H03H9/02921 , H03H9/14538
摘要： An acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode, a reflector electrode, and a dummy electrode. The IDT electrode includes electrode fingers extending in a predetermined direction. The reflector electrode faces the IDT electrode across a gap. The dummy electrode is situated on a straight line extending in the predetermined direction through the gap. At least one of the distance between the dummy electrode and the IDT electrode and the distance between the dummy electrode and the reflector electrode is larger than the distance between the IDT electrode and the reflector electrode. This acoustic wave device prevents a short circuit between the IDT electrode and the reflector electrode, thereby avoiding a decrease in its yield.
摘要翻译：声波装置包括压电基板，叉指式换能器（IDT）电极，反射器电极和虚拟电极。 IDT电极包括沿预定方向延伸的电极指。反射器电极跨越间隙面对IDT电极。虚拟电极位于沿预定方向延伸穿过间隙的直线上。虚拟电极和IDT电极之间的距离和虚拟电极与反射器电极之间的距离中的至少一个大于IDT电极和反射器电极之间的距离。该声波器件防止IDT电极和反射器电极之间的短路，从而避免其产量的降低。

7. 发明授权

US07999437B2 Acoustic boundary wave device and electronic apparatus using the same 有权
标题翻译：声界波装置及其使用的电子装置
公开(公告)号：US07999437B2
公开(公告)日：2011-08-16
申请号：US12619077
申请日：2009-11-16
申请人： Hiroki Kamiguchi , Hidekazu Nakanishi , Yosuke Hamaoka , Shoji Okamoto
发明人： Hiroki Kamiguchi , Hidekazu Nakanishi , Yosuke Hamaoka , Shoji Okamoto
IPC分类号： H03H9/25
CPC分类号： H03H9/0222
摘要： An acoustic boundary wave device includes a piezoelectric body, an IDT layer formed on the piezoelectric body, a pad electrode layer formed on the piezoelectric body and connected to the IDT layer, a first dielectric layer formed on the piezoelectric body and covering at least a part of the IDT electrode layer, and a second dielectric layer formed on the piezoelectric body, covering the first dielectric layer, and having an opening through which at least a part of a top face of the pad electrode layer is exposed. The metal forming lateral faces of the pad electrode layer diffuses more readily into the first dielectric layer than into the second dielectric layer. The second dielectric layer covers the lateral faces of the pad electrode layer and prevents the first dielectric layer from touching the lateral faces of the pad electrode layer.
摘要翻译：声界波装置包括压电体，形成在压电体上的IDT层，形成在压电体上并连接到IDT层的焊盘电极层，形成在压电体上并覆盖至少一部分的第一电介质层以及形成在所述压电体上的第二电介质层，覆盖所述第一电介质层，并且具有露出所述焊盘电极层的顶面的至少一部分的开口部。焊盘电极层的形成金属的侧面比第二电介质层更容易扩散到第一电介质层。第二电介质层覆盖焊盘电极层的侧面，并且防止第一电介质层接触焊盘电极层的侧面。

8. 发明授权

US08576025B2 Acoustic wave device, and filter and duplexer using the same 有权
标题翻译：声波装置，以及使用相同的滤波器和双工器
公开(公告)号：US08576025B2
公开(公告)日：2013-11-05
申请号：US12976030
申请日：2010-12-22
申请人： Takashi Inoue , Hidekazu Nakanishi , Hiroyuki Nakamura , Shun-ichi Seki , Shoji Okamoto
发明人： Takashi Inoue , Hidekazu Nakanishi , Hiroyuki Nakamura , Shun-ichi Seki , Shoji Okamoto
IPC分类号： H03H9/72 , H03H9/64 , H03H9/25
CPC分类号： H03H9/02897 , H01L2224/11 , H03H9/059
摘要： An acoustic wave device includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a dielectric layer provided so as to cover the IDT electrode, and a first stress relaxation layer provided on the dielectric layer. Furthermore, the acoustic wave device includes an extraction electrode connected to the IDT electrode and extracted onto the first stress relaxation layer, and a bump provided on the extraction electrode. An elastic modulus of the first stress relaxation layer is smaller than that of the dielectric layer.
摘要翻译：声波装置包括压电基板，设置在压电基板上的IDT电极，设置为覆盖IDT电极的电介质层和设置在电介质层上的第一应力松弛层。此外，声波器件包括连接到IDT电极并提取到第一应力松弛层上的引出电极和设置在引出电极上的凸块。第一应力松弛层的弹性模量小于电介质层的弹性模量。

9. 发明申请

US20110156837A1 ACOUSTIC WAVE DEVICE, AND FILTER AND DUPLEXER USING THE SAME 有权
标题翻译：声波装置，以及使用它的滤波器和双工器
公开(公告)号：US20110156837A1
公开(公告)日：2011-06-30
申请号：US12976030
申请日：2010-12-22
申请人： Takashi INOUE , Hidekazu Nakanishi , Hiroyuki Nakamura , Shun-ichi Seki , Shoji Okamoto
发明人： Takashi INOUE , Hidekazu Nakanishi , Hiroyuki Nakamura , Shun-ichi Seki , Shoji Okamoto
IPC分类号： H03H9/70
CPC分类号： H03H9/02897 , H01L2224/11 , H03H9/059
摘要： An acoustic wave device includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a dielectric layer provided so as to cover the IDT electrode, and a first stress relaxation layer provided on the dielectric layer. Furthermore, the acoustic wave device includes an extraction electrode connected to the IDT electrode and extracted onto the first stress relaxation layer, and a bump provided on the extraction electrode. An elastic modulus of the first stress relaxation layer is smaller than that of the dielectric layer.
摘要翻译：声波装置包括压电基板，设置在压电基板上的IDT电极，设置为覆盖IDT电极的电介质层和设置在电介质层上的第一应力松弛层。此外，声波器件包括连接到IDT电极并提取到第一应力松弛层上的引出电极和设置在引出电极上的凸块。第一应力松弛层的弹性模量小于电介质层的弹性模量。

10. 发明申请

US20130026881A1 ACOUSTIC WAVE ELEMENT 审中-公开
标题翻译：声波元件
公开(公告)号：US20130026881A1
公开(公告)日：2013-01-31
申请号：US13639119
申请日：2011-05-31
申请人： Shoji Okamoto , Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
发明人： Shoji Okamoto , Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
IPC分类号： H01L41/047
CPC分类号： H03H9/14541 , H03H9/0222 , H03H9/02559
摘要： An IDT electrode includes a first electrode layer mainly made of Mo disposed above the piezoelectric body and a second electrode layer mainly made of Al disposed above the first electrode layer. The IDT electrode has a total thickness not more than 0.15λ. The first electrode layer has a thickness not less than 0.05λ. The second electrode layer has a thickness not less than 0.025λ.
摘要翻译： IDT电极包括主要由设置在压电体上方的Mo形成的第一电极层和设置在第一电极层上方的主要由Al制成的第二电极层。 IDT电极的总厚度不大于0.15λ。第一电极层的厚度不小于0.05λ。第二电极层的厚度不小于0.025λ。

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