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    • 1. 发明申请
    • Vacuum Processing Apparatus And Vacuum Processing Method Using The Same
    • 真空处理装置及其真空处理方法
    • US20100288730A1
    • 2010-11-18
    • US12844268
    • 2010-07-27
    • Toru ItoKotaro FujimotoEiji MatsumotoAtsushi YoshidaKouta Tanaka
    • Toru ItoKotaro FujimotoEiji MatsumotoAtsushi YoshidaKouta Tanaka
    • C23F1/00C23C16/50
    • G05D16/2013
    • The invention provides a vacuum processing chamber comprising a particle removing function and capable of improving the yield and process efficiency for processing samples. The vacuum processing apparatus for transferring and processing samples comprises a processing chamber 207 within a vacuum reactor 103 and a transfer chamber 217 which are communicated via a passage having a gate valve 218, wherein the apparatus further comprises a control unit 234 for performing control upon transferring a sample to be processed between the processing chamber 207 and the transfer chamber 217 by setting the opening of a variable valve 230 for controlling pressure disposed below the vacuum reactor 103 to a predetermined opening so as to decompress the interior of the vacuum reactor, and thereafter, without varying the opening of the variable valve 230 for controlling pressure, supplying a predetermined amount of gas through a feed hole 235 into the vacuum reactor 207 so as to create a gas flow, opening the gate valve 218 to transfer the sample, then closing the gate valve 218 and stopping the feeding of gas after the transfer of the sample has been completed.
    • 本发明提供一种真空处理室,其包括除尘功能,能够提高加工样品的产率和工艺效率。 用于转移和处理样品的真空处理设备包括在真空反应器103内的处理室207和经由具有闸阀218的通道连通的传送室217,其中该设备还包括控制单元234,用于在传送 通过将用于控制设置在真空反应器103下方的压力的可变阀230的开口设定为预定的开口,以便减压真空反应器的内部,然后将处理室207和转移室217之间的处理样品 ,而不改变用于控制压力的可变阀230的开口,将预定量的气体通过进料孔235供应到真空反应器207中,以产生气流,打开闸阀218以转移样品,然后关闭 闸阀218和在样品转移后停止气体供给已经完成。
    • 2. 发明申请
    • Vacuum Processing Apparatus and Vacuum Processing Method Using the Same
    • 真空处理装置及其真空处理方法
    • US20080170970A1
    • 2008-07-17
    • US11772850
    • 2007-07-03
    • Toru ItoKotaro FujimotoEiji MatsumotoAtsushi YoshidaKouta Tanaka
    • Toru ItoKotaro FujimotoEiji MatsumotoAtsushi YoshidaKouta Tanaka
    • G05D16/00
    • G05D16/2013
    • The invention provides a vacuum processing chamber comprising a particle removing function and capable of improving the yield and process efficiency for processing samples. The vacuum processing apparatus for transferring and processing samples comprises a processing chamber 207 within a vacuum reactor 103 and a transfer chamber 217 which are communicated via a passage having a gate valve 218, wherein the apparatus further comprises a control unit 234 for performing control upon transferring a sample to be processed between the processing chamber 207 and the transfer chamber 217 by setting the opening of a variable valve 230 for controlling pressure disposed below the vacuum reactor 103 to a predetermined opening so as to decompress the interior of the vacuum reactor, and thereafter, without varying the opening of the variable valve 230 for controlling pressure, supplying a predetermined amount of gas through a feed hole 235 into the vacuum reactor 207 so as to create a gas flow, opening the gate valve 218 to transfer the sample, then closing the gate valve 218 and stopping the feeding of gas after the transfer of the sample has been completed.
    • 本发明提供一种真空处理室,其包括除尘功能,能够提高加工样品的产率和工艺效率。 用于转移和处理样品的真空处理设备包括在真空反应器103内的处理室207和经由具有闸阀218的通道连通的传送室217,其中该设备还包括控制单元234,用于在传送 通过将用于控制设置在真空反应器103下方的压力的可变阀230的开口设定为预定的开口,以便减压真空反应器的内部,然后将处理室207和转移室217之间的处理样品 ,而不改变用于控制压力的可变阀230的开口,将预定量的气体通过进料孔235供应到真空反应器207中,以产生气流,打开闸阀218以转移样品,然后关闭 闸阀218和在样品转移后停止气体供给已经完成。
    • 3. 发明申请
    • Method of cleaning etching apparatus
    • 清洗蚀刻装置的方法
    • US20060191555A1
    • 2006-08-31
    • US11203092
    • 2005-08-15
    • Atsushi YoshidaKotaro FujimotoTakeshi Shimada
    • Atsushi YoshidaKotaro FujimotoTakeshi Shimada
    • B08B6/00B08B9/00
    • B08B7/0035
    • To provide a cleaning method for an etching apparatus for a metal film that efficiently removes an etching residue deposited in an etching process chamber, assures the reproducibility of the etching performance, and keeps the etching process chamber in a low-dust-emission condition. Each time one workpiece with a metal film is etched (S1), the interior of the vacuum chamber is cleaned by replacing the workpiece with a dummy substrate (S2), performing a first step of plasma processing using oxygen (O2) and carbon tetrafluoride (CF4) to remove a carbon-based deposit pile (S3), and performing a second step of plasma processing using boron trichloride (BCl3) and chlorine (Cl2) to remove a residue that could not be removed by the first step and an etching residue of the metal film (S4).
    • 为了提供一种用于金属膜的蚀刻装置的清洁方法,其有效地去除在蚀刻处理室中沉积的蚀刻残留物,确保蚀刻性能的再现性,并且使蚀刻处理室保持在低灰尘发射状态。 每次蚀刻具有金属膜的工件(S 1)时,通过用虚设衬底(S 2)代替工件来清洁真空室的内部,使用氧气进行等离子体处理的第一步骤(O < 2)和四氟化碳(CF 4 SO 4)以除去碳基沉积堆(S 3),并且使用三氯化硼(BCl 3)进行等离子体处理的第二步骤 和氯(Cl 2 O 2),以除去第一步骤不能除去的残余物和金属膜的蚀刻残留物(S 4)。
    • 4. 发明授权
    • Method of cleaning etching apparatus
    • 清洗蚀刻装置的方法
    • US07662235B2
    • 2010-02-16
    • US11203092
    • 2005-08-15
    • Atsushi YoshidaKotaro FujimotoTakeshi Shimada
    • Atsushi YoshidaKotaro FujimotoTakeshi Shimada
    • B08B3/12B08B6/00
    • B08B7/0035
    • To provide a cleaning method for an etching apparatus for a metal film that efficiently removes an etching residue deposited in an etching process chamber, assures the reproducibility of the etching performance, and keeps the etching process chamber in a low-dust-emission condition.Each time one workpiece with a metal film is etched (S1), the interior of the vacuum chamber is cleaned by replacing the workpiece with a dummy substrate (S2), performing a first step of plasma processing using oxygen (O2) and carbon tetrafluoride (CF4) to remove a carbon-based deposit pile (S3), and performing a second step of plasma processing using boron trichloride (BCl3) and chlorine (Cl2) to remove a residue that could not be removed by the first step and an etching residue of the metal film (S4).
    • 为了提供一种用于金属膜的蚀刻装置的清洁方法,其有效地去除在蚀刻处理室中沉积的蚀刻残留物,确保蚀刻性能的再现性,并且使蚀刻处理室保持在低灰尘发射状态。 每次蚀刻具有金属膜的一个工件(S1),通过用虚设衬底(S2)代替工件来清洁真空室的内部,使用氧(O 2)和四氟化碳(O 2)进行等离子体处理的第一步骤 CF4)以除去碳基沉积堆(S3),并且使用三氯化硼(BCl 3)和氯(Cl 2)进行等离子体处理的第二步骤,以除去第一步骤中不能除去的残留物和蚀刻残留物 的金属膜(S4)。
    • 9. 发明授权
    • Image modulation apparatus, method, and program
    • 图像调制装置,方法和程序
    • US09076369B2
    • 2015-07-07
    • US13754968
    • 2013-01-31
    • Atsushi Yoshida
    • Atsushi Yoshida
    • G09G5/02G06F3/14G09G5/00
    • G09G5/02G06F3/1454G09G5/003G09G2320/0693G09G2370/022G09G2370/042
    • An image modulation apparatus includes a device information obtaining unit to obtain device property information of a plurality of display devices respectively disposed at a plurality of image distribution destination apparatuses; a simulated image generator to generate a simulated image to be displayed on each of the display devices disposed at each of the image distribution destination apparatuses based on a distribution target image, to be transmitted to each of the image distribution destination apparatuses, and the device property information of each of the display devices obtained by the device information obtaining unit; and an image modulation unit to modulate the distribution target image based on a modulation instruction prepared for the plurality of the simulated images simulated by the simulated image generator.
    • 图像调制装置包括:设备信息获取单元,用于获得分别设置在多个图像分发目的地设备上的多个显示设备的设备属性信息; 模拟图像生成器,用于生成待发送到每个图像分发目的地设备的基于分发对象图像而在每个图像分发目的地设备上设置的每个显示设备上显示的模拟图像,以及设备属性 由设备信息获取单元获得的每个显示设备的信息; 以及图像调制单元,用于基于由模拟图像生成器模拟的多个模拟图像准备的调制指令来调制分布对象图像。