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1. 发明授权

US4210464A Method of simultaneously controlling the lifetimes and leakage currents in semiconductor devices by hot electron irradiation through passivating glass layers 失效
标题翻译：通过钝化玻璃层通过热电子照射同时控制半导体器件寿命和漏电流的方法
公开(公告)号：US4210464A
公开(公告)日：1980-07-01
申请号：US873774
申请日：1978-01-31
申请人： Tomoyuki Tanaka , Masahiro Okamura , Toshikatsu Shirasawa , Takuzo Ogawa
发明人： Tomoyuki Tanaka , Masahiro Okamura , Toshikatsu Shirasawa , Takuzo Ogawa
IPC分类号： H01L29/73 , H01L21/26 , H01L21/263 , H01L21/322 , H01L21/331 , H01L21/56 , H01L23/31 , H01L29/74 , H01L29/861 , C03C3/04
CPC分类号： H01L24/01 , H01L21/26 , H01L21/263 , H01L21/56 , H01L23/3171 , H01L23/3178 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/0103 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/10253 , H01L2924/12036 , H01L2924/1301 , H01L2924/3025
摘要： The whole body of a semiconductor device with its pn junction exposed ends covered by insulating glass is subjected to the exposure to radiation having an energy of higher than 0.5 MeV in terms of the reduced energy of electron beams while the semiconductor device is maintained at temperatures higher than 300.degree. C., and preferably higher than 350.degree. C. As a result, the life time of the minority carriers in the semiconductor device can be shortened without increasing the leakage current in the reverse direction.
摘要翻译：以绝缘玻璃覆盖的其pn结露出端的半导体器件的整个体，由于电子束的能量减少而被照射到具有高于0.5MeV的能量的辐射，同时半导体器件保持在更高的温度超过300℃，优选高于350℃。结果，半导体器件中的少数载流子的寿命可以缩短，而不会增加相反方向的泄漏电流。

2. 发明授权

US4201598A Electron irradiation process of glass passivated semiconductor devices for improved reverse characteristics 失效
标题翻译：用于改善反向特性的玻璃钝化半导体器件的电子辐射过程
公开(公告)号：US4201598A
公开(公告)日：1980-05-06
申请号：US820698
申请日：1977-08-01
申请人： Tomoyuki Tanaka , Toshikatsu Shirasawa , Masahiro Okamura
发明人： Tomoyuki Tanaka , Toshikatsu Shirasawa , Masahiro Okamura
IPC分类号： H01L29/73 , H01L21/263 , H01L21/322 , H01L21/331 , H01L21/56 , H01L23/29 , H01L23/31 , H01L29/744 , H01L29/861 , H01L7/54
CPC分类号： H01L21/263 , H01L21/56 , H01L23/291 , H01L23/3107 , H01L23/3171 , H01L2924/0002 , Y10S438/904
摘要： Semiconductor devices with improved reverse characteristics are obtained by exposing the semiconductor bodies of the devices that are passivated by alkali-free glasses to a high energy radiation such as an electron radiation so as to shorten a life time of the bodies down to a predetermined value, while increasing the reverse leakage current of the bodies, and by subjecting the irradiated semiconductor bodies to an annealing treatment at a temperature of 250.degree. to 350.degree. C. for a sufficient time so as to decrease the reverse leakage current down to a predetermined value, while maintaining the order of the shortened life time.
摘要翻译：具有改进的反向特性的半导体器件通过将被无碱玻璃钝化的器件的半导体本体暴露于诸如电子辐射的高能量辐射来获得，以便将物体的寿命缩短到预定值，同时增加体的反向泄漏电流，并且通过在250〜350℃的温度下对照射的半导体体进行退火处理足够的时间，以将反向泄漏电流降低到预定值，同时保持缩短生命周期的顺序。

3. 发明授权

US4040084A Semiconductor device having high blocking voltage with peripheral circular groove 失效
标题翻译：具有外围圆形沟槽的高阻塞电压的半导体器件
公开(公告)号：US4040084A
公开(公告)日：1977-08-02
申请号：US610786
申请日：1975-09-05
申请人： Tomoyuki Tanaka , Masahiro Okamura , Takuzo Ogawa , Yutaka Misawa
发明人： Tomoyuki Tanaka , Masahiro Okamura , Takuzo Ogawa , Yutaka Misawa
IPC分类号： H01L29/73 , H01L21/00 , H01L21/329 , H01L21/331 , H01L29/00 , H01L29/06 , H01L29/74 , H01L29/34 , H01L29/72
CPC分类号： H01L29/00 , H01L21/00 , H01L29/06
摘要： A semiconductor device having a high blocking voltage, comprises a pair of principal surfaces opposite to each other, a circular groove cut in the peripheral portion of one of the principal surfaces and a PN junction formed along the surface of the groove and the one of the principal surfaces, wherein the region on the side of the PN junction near the one of the principal surfaces is of high impurity concentration, the outer edge of the PN junction appears in the bevel surface connecting the pair of principal surfaces, and the edge of the PN junction intersects the bevel surface in such a manner that the angle therebetween in the region of high impurity concentration is obtuse.

4. 发明授权

US08872127B2 Beam current controller for laser ion source 有权
标题翻译：光束电流控制器用于激光离子源
公开(公告)号：US08872127B2
公开(公告)日：2014-10-28
申请号：US13398553
申请日：2012-02-16
申请人： Masahiro Okamura
发明人： Masahiro Okamura
IPC分类号： H01J27/24 , H05H1/10 , A61N5/10 , H05H7/08
CPC分类号： H01J27/24 , A61N5/10 , A61N2005/1074 , A61N2005/1088 , H05H2007/082
摘要： The present invention relates to the design and use of an ion source with a rapid beam current controller for experimental and medicinal purposes. More particularly, the present invention relates to the design and use of a laser ion source with a magnetic field applied to confine a plasma flux caused by laser ablation.
摘要翻译：本发明涉及具有用于实验和药用目的的快速束流控制器的离子源的设计和使用。更具体地，本发明涉及具有施加磁场的激光离子源的设计和使用，以限制由激光烧蚀引起的等离子体通量。

5. 发明授权

US06310582B1 Antenna system 失效
标题翻译：天线系统
公开(公告)号：US06310582B1
公开(公告)日：2001-10-30
申请号：US09493658
申请日：2000-01-28
申请人： Tatsuya Uetake , Masahiro Okamura , Midori Taira , Akito Kobayashi , Ken Satou
发明人： Tatsuya Uetake , Masahiro Okamura , Midori Taira , Akito Kobayashi , Ken Satou
IPC分类号： H01A300
CPC分类号： H01Q21/28 , H01Q1/125 , H01Q3/08
摘要： When communication is performed simultaneously with two moving bodies such as a satellite, an antenna construction in which a plurality of antennas do not become an obstacle to each other's communication and the direction (the azimuth angle and the elevation angle) adjusting mechanism thereof can be realized with a simple construction. The two antennas have another movable portion (a rotation mechanism with respect to the axis) independently, while sharing the direction adjusting mechanism for the azimuth angle and the elevation angle. The rotation axis of the rotation mechanism of each antenna faces the same direction on the same plane, and each rotation mechanism is separately arranged in an area defined by a plane obtained by extending the axis of the azimuth angle adjusting mechanism toward the axial direction of the elevation angle adjusting mechanism. The azimuth angle and the elevation angle of respective antennas can be separately adjusted by the rotation mechanism with respect to the axis, hence the antennas can be directed to the communication targets existing in the two different directions simultaneously from the reception point.
摘要翻译：当与诸如卫星的两个移动体同时进行通信时，可以实现多个天线不会成为彼此通信的障碍物的天线结构以及其方向（方位角和仰角）调节机构施工简单。两个天线独立地具有另一个可移动部分（相对于轴线的旋转机构），同时共享用于方位角和仰角的方向调节机构。每个天线的旋转机构的旋转轴线在相同的平面上面向相同的方向，并且每个旋转机构分开布置在由通过使方位角调节机构的轴线朝向轴向方向延伸而获得的平面所限定的区域中仰角调整机构。可以通过旋转机构相对于轴分别调整各个天线的方位角和仰角，从而可以从接收点同时将天线指向存在于两个不同方向上的通信对象。

6. 发明授权

US07046698B1 Communicating apparatus and communicating method 失效
标题翻译：通讯装置及通讯方式
公开(公告)号：US07046698B1
公开(公告)日：2006-05-16
申请号：US09658877
申请日：2000-09-08
申请人： Manabu Nohara , Takehiko Shioda , Katsunori Arakawa , Osamu Yamazaki , Masami Suzuki , Yasuteru Kodama , Masahiro Okamura , Takayuki Akimoto , Hiroto Inoue
发明人： Manabu Nohara , Takehiko Shioda , Katsunori Arakawa , Osamu Yamazaki , Masami Suzuki , Yasuteru Kodama , Masahiro Okamura , Takayuki Akimoto , Hiroto Inoue
IPC分类号： H04J3/06
CPC分类号： H04W56/0085 , H04B7/2662
摘要： A communicating apparatus performs an asynchronous communication with a base station. The communicating apparatus is provided with: a receiving device for receiving a down link signal, which is transmitted from the base station and in which a division signal is inserted for each of constant time intervals; a detecting device for detecting division signals out of the received down link signal, in phase to the constant time intervals; an adding device for adding the detected division signals over a predetermined time duration, which is longer than the constant time interval, with matching phases for each of the constant time intervals, so as to generate accumulated additional values; and a memory device for storing the accumulated additional values generated by the adding device, to thereby perform synchronization capturing with the base station on the basis of the accumulated additional values added over the predetermined time duration and stored in the memory device.
摘要翻译：通信装置与基站进行异步通信。通信装置具有：接收装置，用于接收从基站发送的下行链路信号，并且对于每个恒定时间间隔插入分频信号; 检测装置，用于相对于所述恒定时间间隔检测所接收的下行链路信号中的分频信号; 一个加法装置，用于在比常数时间间隔长的预定持续时间内对每个恒定时间间隔的匹配相位增加检测到的除法信号，以产生累加的附加值; 以及存储装置，用于存储由加法装置产生的积累的附加值，从而基于在预定持续时间内添加并存储在存储装置中的累积附加值，与基站执行同步捕获。

7. 发明授权

US06546258B1 Communication apparatus and communication method 失效
标题翻译：通信设备和通信方法
公开(公告)号：US06546258B1
公开(公告)日：2003-04-08
申请号：US09639888
申请日：2000-08-17
申请人： Manabu Nohara , Yasuteru Kodama , Masami Suzuki , Masahiro Okamura , Takayuki Akimoto , Osamu Yamazaki , Takehiko Shioda
发明人： Manabu Nohara , Yasuteru Kodama , Masami Suzuki , Masahiro Okamura , Takayuki Akimoto , Osamu Yamazaki , Takehiko Shioda
IPC分类号： H04B1500
CPC分类号： H04W48/20
摘要： A communication apparatus for communicating with one base station among a plurality of base stations is provided with a present position detecting device for detecting a present position of the communication apparatus and outputting present position information indicative of the detected present position. The communication apparatus is also provided with an identification information obtaining device for obtaining identification information of respective one of the base stations on the basis of the present position information outputted by the present position detecting device. The communication apparatus is further provided with a specifying device for specifying said one base station on the basis of the identification information obtained by the identification information obtaining device.
摘要翻译：在多个基站中与一个基站通信的通信装置设置有用于检测通信装置的当前位置并输出表示检测到的当前位置的当前位置信息的当前位置检测装置。通信装置还具有识别信息获取装置，用于根据当前位置检测装置输出的当前位置信息获得各个基站的识别信息。该通信装置还具有根据由识别信息获取装置获得的识别信息来指定所述一个基站的指定装置。

8. 发明授权

US4745088A Vapor phase growth on semiconductor wafers 失效
标题翻译：半导体晶圆上的气相生长
公开(公告)号：US4745088A
公开(公告)日：1988-05-17
申请号：US830713
申请日：1986-02-19
申请人： Yosuke Inoue , Takaya Suzuki , Masahiro Okamura , Noboru Akiyama , Masato Fujita , Hiroo Tochikubo , Shinya Iida
发明人： Yosuke Inoue , Takaya Suzuki , Masahiro Okamura , Noboru Akiyama , Masato Fujita , Hiroo Tochikubo , Shinya Iida
IPC分类号： H01L21/205 , C23C16/458 , C23C16/46 , H01L21/31 , C23C16/00
CPC分类号： C23C16/46 , C23C16/4584 , Y10S148/057 , Y10S148/169 , Y10S438/935
摘要： The vapor phase growth on semiconductor wafers is carried out by an apparatus in which a multiplicity of semiconductor wafers are held by a holder so that the semiconductor wafers lie one over another in a vertical direction, and are rotated together with the holder, the holder is placed in a heater disposed in a reaction vessel, a raw material gas supply nozzle and a raw material gas exhaust nozzle are provided within the heater so that the semiconductor wafers are interposed between the gas supply nozzle and the gas discharge nozzle, and the gas supply nozzle and the gas discharge nozzle have gas supply holes and gas discharge holes, respectively, so that a raw material gas can flow on each semiconductor wafer in horizontal directions. When the temperature of the heater is raised by a heating source to heat the semiconductor wafers, the raw material gas is supplied from the gas supply holes to each semiconductor wafer, and thus a uniform layer is grown on each semiconductor wafer from the raw material gas.
摘要翻译：半导体晶片上的气相生长由多个半导体晶片被保持器保持的装置进行，使得半导体晶片在垂直方向上一个接一个地并且与保持器一起旋转，保持器是放置在设置在反应容器中的加热器中，原料气体供给喷嘴和原料气体排出喷嘴设置在加热器内，使得半导体晶片插入在气体供给喷嘴和气体排出喷嘴之间，气体供给喷嘴和气体排出喷嘴分别具有气体供给孔和气体排出孔，使得原料气体可以在水平方向上在每个半导体晶片上流动。当加热器的温度由加热源升高以加热半导体晶片时，原料气体从气体供给孔供给到每个半导体晶片，因此从原料气体在每个半导体晶片上生长均匀的层。

9. 发明授权

US4649990A Heat-conducting cooling module 失效
标题翻译：导热冷却模块
公开(公告)号：US4649990A
公开(公告)日：1987-03-17
申请号：US730642
申请日：1985-05-06
申请人： Yasutoshi Kurihara , Tasao Soga , Hiroaki Hachino , Kenji Miyata , Masahiro Okamura , Fumiyuki Kobayashi , Takahiro Daikoku
发明人： Yasutoshi Kurihara , Tasao Soga , Hiroaki Hachino , Kenji Miyata , Masahiro Okamura , Fumiyuki Kobayashi , Takahiro Daikoku
IPC分类号： H01L23/373 , H01L23/433 , F28F7/00
CPC分类号： H01L23/3731 , H01L23/4338 , H01L2224/16225
摘要： A heat-conducting cooling module for cooling a semiconductor substrate in an integrated circuit package assembly in which a semiconductor substrate is mounted on a base board by small solder pellets, and which contains a single substrate or laminated substrates. A heat-conducting relay member is provided between the semiconductor substrate and a housing so as to be pressed onto the semiconductor substrate. At least either one of the housing or the heat-conducting relay member is made of a sintered product which includes silicon carbide as a chief component.
摘要翻译：一种用于冷却集成电路封装组件中的半导体衬底的导热冷却模块，其中通过小的焊料颗粒将半导体衬底安装在基板上，并且其包含单个衬底或层压衬底。导热继电器件设置在半导体衬底和壳体之间，以便被压在半导体衬底上。壳体或导热继电器构件中的至少一个由包括碳化硅作为主要成分的烧结产品制成。

10. 发明授权

US4216487A Bidirectional light-activated thyristor having substrate optical isolation 失效
标题翻译：具有基板光学隔离的双向光激活晶闸管
公开(公告)号：US4216487A
公开(公告)日：1980-08-05
申请号：US879758
申请日：1978-02-21
申请人： Nobutake Konishi , Takeshi Yokota , Yoshitaka Sugawara , Tsutomu Yatsuo , Masahiro Okamura
发明人： Nobutake Konishi , Takeshi Yokota , Yoshitaka Sugawara , Tsutomu Yatsuo , Masahiro Okamura
IPC分类号： H01L29/74 , G02B6/42 , H01L29/747 , H01L31/0203 , H01L31/111 , H01L31/167 , H02M1/08
CPC分类号： H01L31/0203 , G02B6/421 , G02B6/4295 , H01L31/1113 , H01L31/167
摘要： Disclosed is a bidirectional light-activated thyristor which comprises a first and a second thyristor portion arranged in inverse-parallel with each other with a predetermined positional relation, an isolation section for electrically isolating the first and second thyristor portions from each other, a first and a second main electrode for connecting the first and second thyristor portions with each other in inverse-parallel, and a first and a second photo-trigger means for triggering the first and second thyristor portions respectively, wherein the photo-trigger signal from the first photo-trigger means is prevented by the first thyristor portion from reaching the second thyristor portion and the photo-trigger signal from the second photo-trigger means is prevented by the second thyristor portion from reaching the first thyristor portion.
摘要翻译：公开了一种双向光激活晶闸管，其包括以预定的位置关系彼此相反并联布置的第一和第二晶闸管部分，用于将第一和第二晶闸管部分彼此电隔离的隔离部分，第一和第二晶体管用于将第一和第二晶闸管部分彼此并联连接的第二主电极和分别触发第一和第二晶闸管部分的第一和第二光触发装置，其中来自第一照片的光触发信号通过第一晶闸管部分防止触发装置到达第二晶闸管部分，并且通过第二晶闸管部分防止来自第二光触发装置的光触发信号到达第一晶闸管部分。

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