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1. 发明授权

US07382011B2 Solid-state image sensing device equipped with inner lens 失效
标题翻译：配有内镜的固态摄像装置
公开(公告)号：US07382011B2
公开(公告)日：2008-06-03
申请号：US11477418
申请日：2006-06-30
申请人： Tomoyuki Noda , Yuya Fujino
发明人： Tomoyuki Noda , Yuya Fujino
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14625 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/14685 , H01L27/14687
摘要： A solid-state image sensing device having an effective pixel area and an optical black area disposed on one principal surface of a substrate, includes photoelectric converter elements, a wiring part containing a plurality of wiring layers disposed on the one principal surface of the substrate, in which in the optical black area more wiring layers are disposed than in the effective pixel area, an interlayer dielectric disposed between, among the plurality of wiring layers, a topmost first wiring layer and a second wiring layer disposed beneath the first wiring layer, a passivation film disposed on the interlayer dielectric in the effective pixel area and disposed on the first wiring layer in the optical black area, and inner lenses disposed at least at positions on the passivation film that corresponds to the effective pixel area, a thickness of the passivation film being equal to or less than a thickness of the first wiring layer.
摘要翻译：具有设置在基板的一个主表面上的有效像素区域和光学黑色区域的固体摄像装置包括光电转换元件，配置在基板的一个主面上的多个配线层的配线部，其中在所述光学黑色区域中布置的布线层比有效像素区域中更多的布线层，布置在所述多个布线层之间的层间电介质，布置在所述第一布线层下方的最上面的第一布线层和第二布线层，钝化膜设置在有效像素区域中的层间电介质上，并且设置在光学黑色区域中的第一布线层上，并且至少位于钝化膜上对应于有效像素区域的位置处的内透镜，钝化膜的厚度膜的厚度等于或小于第一布线层的厚度。

2. 发明申请

US20080191301A1 SOLID-STATE IMAGE SENSING DEVICE EQUIPPED WITH INNER LENS 有权
标题翻译：固态图像传感装置，内置镜头
公开(公告)号：US20080191301A1
公开(公告)日：2008-08-14
申请号：US12105354
申请日：2008-04-18
申请人： Tomoyuki Noda , Yuya Fujino
发明人： Tomoyuki Noda , Yuya Fujino
IPC分类号： H01L31/00
CPC分类号： H01L27/14625 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/14685 , H01L27/14687
摘要： A solid-state image sensing device having an effective pixel area and an optical black area disposed on one principal surface of a substrate, includes photoelectric converter elements, a wiring part containing a plurality of wiring layers disposed on the one principal surface of the substrate, in which in the optical black area more wiring layers are disposed than in the effective pixel area, an interlayer dielectric disposed between, among the plurality of wiring layers, a topmost first wiring layer and a second wiring layer disposed beneath the first wiring layer, a passivation film disposed on the interlayer dielectric in the effective pixel area and disposed on the first wiring layer in the optical black area, and inner lenses disposed at least at positions on the passivation film that corresponds to the effective pixel area, a thickness of the passivation film being equal to or less than a thickness of the first wiring layer.
摘要翻译：具有设置在基板的一个主表面上的有效像素区域和光学黑色区域的固体摄像装置包括光电转换元件，配置在基板的一个主面上的多个配线层的配线部，其中在所述光学黑色区域中布置的布线层比有效像素区域中更多的布线层，布置在所述多个布线层之间的层间电介质，布置在所述第一布线层下方的最上面的第一布线层和第二布线层，钝化膜设置在有效像素区域中的层间电介质上，并且设置在光学黑色区域中的第一布线层上，并且至少设置在钝化膜上对应于有效像素区域的位置的内透镜，钝化层的厚度膜的厚度等于或小于第一布线层的厚度。

3. 发明授权

US07679117B2 Solid-state image sensing device equipped with inner lens 有权
标题翻译：配有内镜的固态摄像装置
公开(公告)号：US07679117B2
公开(公告)日：2010-03-16
申请号：US12105354
申请日：2008-04-18
申请人： Tomoyuki Noda , Yuya Fujino
发明人： Tomoyuki Noda , Yuya Fujino
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14625 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/14685 , H01L27/14687
摘要： A solid-state image sensing device having an effective pixel area and an optical black area disposed on one principal surface of a substrate, includes photoelectric converter elements, a wiring part containing a plurality of wiring layers disposed on the one principal surface of the substrate, in which in the optical black area more wiring layers are disposed than in the effective pixel area, an interlayer dielectric disposed between, among the plurality of wiring layers, a topmost first wiring layer and a second wiring layer disposed beneath the first wiring layer, a passivation film disposed on the interlayer dielectric in the effective pixel area and disposed on the first wiring layer in the optical black area, and inner lenses disposed at least at positions on the passivation film that corresponds to the effective pixel area, a thickness of the passivation film being equal to or less than a thickness of the first wiring layer.
摘要翻译：具有设置在基板的一个主表面上的有效像素区域和光学黑色区域的固体摄像装置包括光电转换元件，配置在基板的一个主面上的多个配线层的配线部，其中在所述光学黑色区域中布置的布线层比有效像素区域中更多的布线层，布置在所述多个布线层之间的层间电介质，布置在所述第一布线层下方的最上面的第一布线层和第二布线层，钝化膜设置在有效像素区域中的层间电介质上，并且设置在光学黑色区域中的第一布线层上，并且至少设置在钝化膜上对应于有效像素区域的位置的内透镜，钝化层的厚度膜的厚度等于或小于第一布线层的厚度。

4. 发明申请

US20070001252A1 Solid-state image sensing device equipped with inner lens 失效
标题翻译：固态摄像装置配有内镜
公开(公告)号：US20070001252A1
公开(公告)日：2007-01-04
申请号：US11477418
申请日：2006-06-30
申请人： Tomoyuki Noda , Yuya Fujino
发明人： Tomoyuki Noda , Yuya Fujino
IPC分类号： H01L31/0232
CPC分类号： H01L27/14625 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/14685 , H01L27/14687
摘要： A solid-state image sensing device having an effective pixel area and an optical black area disposed on one principal surface of a substrate, includes photoelectric converter elements, a wiring part containing a plurality of wiring layers disposed on the one principal surface of the substrate, in which in the optical black area more wiring layers are disposed than in the effective pixel area, an interlayer dielectric disposed between, among the plurality of wiring layers, a topmost first wiring layer and a second wiring layer disposed beneath the first wiring layer, a passivation film disposed on the interlayer dielectric in the effective pixel area and disposed on the first wiring layer in the optical black area, and inner lenses disposed at least at positions on the passivation film that corresponds to the effective pixel area, a thickness of the passivation film being equal to or less than a thickness of the first wiring layer.
摘要翻译：具有设置在基板的一个主表面上的有效像素区域和光学黑色区域的固体摄像装置包括光电转换元件，配置在基板的一个主面上的多个配线层的配线部，其中在光学黑色区域中布置的布线层比在有效像素区域中更多的布线层，布置在多个布线层之间的层间电介质，布置在第一布线层之下的最上面的第一布线层和第二布线层，钝化膜设置在有效像素区域中的层间电介质上，并且设置在光学黑色区域中的第一布线层上，并且至少位于钝化膜上对应于有效像素区域的位置处的内透镜，钝化膜的厚度膜的厚度等于或小于第一布线层的厚度。

5. 发明申请

US20100230728A1 MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换装置的制造方法
公开(公告)号：US20100230728A1
公开(公告)日：2010-09-16
申请号：US12784567
申请日：2010-05-21
申请人： Takashi Okagawa , Hiroaki Naruse , Hiroshi Yuzurihara , Shigeru Nishimura , Takeshi Aoki , Yuya Fujino
发明人： Takashi Okagawa , Hiroaki Naruse , Hiroshi Yuzurihara , Shigeru Nishimura , Takeshi Aoki , Yuya Fujino
IPC分类号： H01L27/148
CPC分类号： H01L27/14689 , H01L21/76877 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14636 , H01L27/14643
摘要： A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other. And the step of forming the first electroconductor, and the step of forming the third electroconductor are performed simultaneously.
摘要翻译：由光电转换元件的光的入射孔径变宽的结构产生的噪声降低。在光电转换装置的制造方法中，布置在布置在第一层间绝缘层中的第一孔中的第一导电体不是通过布线层中包含的布线将第一半导体区域电连接到放大MOS晶体管的栅电极。此外，第二电导体将不同于第一半导体区域的第二半导体区域电连接到布线。在该第二电导体的结构中，布置在布置在第一层间绝缘层中的第二孔中的第三导电体和布置在布置在第二层间绝缘层中的第三孔中的第四导电体彼此堆叠并电连接。并且同时进行形成第一导电体的步骤和形成第三导电体的步骤。

6. 发明授权

US07842988B2 Manufacturing method of photoelectric conversion device 有权
标题翻译：光电转换装置的制造方法
公开(公告)号：US07842988B2
公开(公告)日：2010-11-30
申请号：US12784567
申请日：2010-05-21
申请人： Takashi Okagawa , Hiroaki Naruse , Hiroshi Yuzurihara , Shigeru Nishimura , Takeshi Aoki , Yuya Fujino
发明人： Takashi Okagawa , Hiroaki Naruse , Hiroshi Yuzurihara , Shigeru Nishimura , Takeshi Aoki , Yuya Fujino
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L21/76877 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14636 , H01L27/14643
摘要： A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other. And the step of forming the first electroconductor, and the step of forming the third electroconductor are performed simultaneously.
摘要翻译：由光电转换元件的光的入射孔径变宽的结构产生的噪声降低。在光电转换装置的制造方法中，布置在布置在第一层间绝缘层中的第一孔中的第一导电体不是通过布线层中包含的布线将第一半导体区域电连接到放大MOS晶体管的栅电极。此外，第二电导体将不同于第一半导体区域的第二半导体区域电连接到布线。在该第二电导体的结构中，布置在布置在第一层间绝缘层中的第二孔中的第三导电体和布置在布置在第二层间绝缘层中的第三孔中的第四导电体彼此堆叠并电连接。并且同时进行形成第一导电体的步骤和形成第三导电体的步骤。

7. 发明申请

US20080057615A1 MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换装置的制造方法
公开(公告)号：US20080057615A1
公开(公告)日：2008-03-06
申请号：US11840583
申请日：2007-08-17
申请人： Takashi Okagawa , Hiroaki Naruse , Hiroshi Yuzurihara , Shigeru Nishimura , Takeshi Aoki , Yuya Fujino
发明人： Takashi Okagawa , Hiroaki Naruse , Hiroshi Yuzurihara , Shigeru Nishimura , Takeshi Aoki , Yuya Fujino
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L21/76877 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14636 , H01L27/14643
摘要： A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other. And the step of forming the first electroconductor, and the step of forming the third electroconductor are performed simultaneously.
摘要翻译：由光电转换元件的光的入射孔径变宽的结构产生的噪声降低。在光电转换装置的制造方法中，布置在布置在第一层间绝缘层中的第一孔中的第一导电体不是通过布线层中包含的布线将第一半导体区域电连接到放大MOS晶体管的栅电极。此外，第二电导体将不同于第一半导体区域的第二半导体区域电连接到布线。在该第二电导体的结构中，布置在布置在第一层间绝缘层中的第二孔中的第三导电体和布置在布置在第二层间绝缘层中的第三孔中的第四导电体彼此堆叠并电连接。并且同时进行形成第一导电体的步骤和形成第三导电体的步骤。

8. 发明授权

US07749788B2 Manufacturing method of photoelectric conversion device 有权
公开(公告)号：US07749788B2
公开(公告)日：2010-07-06
申请号：US11840583
申请日：2007-08-17
申请人： Takashi Okagawa , Hiroaki Naruse , Hiroshi Yuzurihara , Shigeru Nishimura , Takeshi Aoki , Yuya Fujino
发明人： Takashi Okagawa , Hiroaki Naruse , Hiroshi Yuzurihara , Shigeru Nishimura , Takeshi Aoki , Yuya Fujino
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L21/76877 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14636 , H01L27/14643
摘要： A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other. And the step of forming the first electroconductor, and the step of forming the third electroconductor are performed simultaneously.

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