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1. 发明授权

US5411759A Electro-luminescence indicating panel and method of manufacture 失效
标题翻译：电发光指示板及其制造方法
公开(公告)号：US5411759A
公开(公告)日：1995-05-02
申请号：US74566
申请日：1993-06-10
申请人： Tomoyuki Kawashima , Hisato Kato , Kazuyoshi Shibata , Harutaka Taniguchi
发明人： Tomoyuki Kawashima , Hisato Kato , Kazuyoshi Shibata , Harutaka Taniguchi
IPC分类号： G09F9/30 , H05B33/10 , H05B33/12 , H05B33/22 , H05B33/26 , C23C26/00
CPC分类号： H05B33/12 , H05B33/10 , H05B33/22 , H05B33/26
摘要： The present invention reduces weak points in the insulation films of electro-luminescence (EL) panels by constructing, at least the lower part of the insulating film, as a coated film comprising an insulator in film form created by coating a fluidic material in an EL indicating panel which includes a light emitting film disposed between a lower electrode film and an upper electrode film, and insulation films disposed in a way that will make contact with the light emitting film; and further by forming the contours of the light emitting film parts larger than the area in which the lower and upper electrode films intersect with each other in an EL indicating panel in which the light emitting film is divided into many light emitting film parts.
摘要翻译：本发明通过至少构成绝缘膜的下部来形成电致发光（EL）面板的绝缘膜的薄弱环节，作为包含通过在EL中涂覆流体材料形成的膜形式的绝缘体的涂膜指示板，其包括设置在下电极膜和上电极膜之间的发光膜，以及以将与发光膜接触的方式设置的绝缘膜; 并且进一步通过在其中发光膜被分成许多发光膜部分的EL指示面板中形成大于下电极膜和上电极膜的区域彼此相交的发光膜部分的轮廓。

2. 发明授权

US5721562A Electroluminescent display device including a columnar crystal structure insulating film 失效
标题翻译：电致发光显示装置，包括柱状晶体结构绝缘膜
公开(公告)号：US5721562A
公开(公告)日：1998-02-24
申请号：US633218
申请日：1996-04-17
申请人： Tomoyuki Kawashima , Harutaka Taniguchi , Hisato Kato , Kazuyoshi Shibata
发明人： Tomoyuki Kawashima , Harutaka Taniguchi , Hisato Kato , Kazuyoshi Shibata
IPC分类号： H05B33/10 , H05B33/12 , H05B33/22 , G09G3/30
CPC分类号： H05B33/22 , H05B33/10
摘要： An electroluminescent display device with decreased voltage requirements comprises a substrate having a major surface, a first electrode over the major surface, a light-emitting film over the first electrode, and a second electrode over the light-emitting film. At least one insulating film is disposed in contact with a major surface of the light-emitting film, which insulating film has a columnar crystal structure oriented parallel to an electric field formed between the two electrodes.
摘要翻译：具有降低的电压要求的电致发光显示装置包括具有主表面的基板，主表面上的第一电极，在第一电极上方的发光膜，以及发光膜上的第二电极。至少一个绝缘膜设置成与发光膜的主表面接触，该绝缘膜具有与两个电极之间形成的电场平行取向的柱状晶体结构。

3. 发明授权

US5716501A Method of producing electroluminescence emitting film 失效
标题翻译：电致发光发光膜的制造方法
公开(公告)号：US5716501A
公开(公告)日：1998-02-10
申请号：US440400
申请日：1995-05-12
申请人： Tomoyuki Kawashima , Harutaka Taniguchi , Hisato Kato , Kazuyoshi Shibata
发明人： Tomoyuki Kawashima , Harutaka Taniguchi , Hisato Kato , Kazuyoshi Shibata
IPC分类号： C09K11/77 , C23C14/00 , C23C14/06 , H05B33/10 , H05B33/12 , H05B33/14 , C23C14/34
CPC分类号： H05B33/10 , C09K11/7702 , C09K11/7703 , C09K11/7717 , C09K11/7718 , C09K11/773 , C09K11/7731 , C23C14/0036 , C23C14/0057 , C23C14/0623 , H05B33/14
摘要： A method of making electroluminescence emitting films each containing sulfide such as Sr, Ca, etc. as a base material and a rare earth element such as Ce, Eu, Pr, etc. as an emitting center by sputtering method, so that the electroluminescence emitting film can produce with high luminance and with various emission light colors. In the method, an element such as Sr to be sulfidized for a base material is used as a target. A sputtering gas such as Argon to be supplied to a sputtering apparatus is mixed with an H.sub.2 S gas as a base material sulfur compound. A rare earth element compound such as tris-cyclopentadienyl-cerium for an emitting center is gasified by a gas generator while being heated under supply of a carrier gas such as Ar, so that the gasified rare earth element compound is added to the sputtering gas. In the above-mentioned condition, an electroluminescence emitting film is produced on a display panel by a high frequency sputtering method in a sputtering atmosphere of the sputtering gas containing sulfur for the base material and a rare earth element for the emitting center.
摘要翻译：通过溅射法制造以Sr，Ca等作为基体的硫化物和Ce，Eu，Pr等稀土类元素的电致发光发光膜的溅射法，胶片可以产生高亮度和各种发光颜色。在该方法中，作为靶材使用要被硫化的Sr等元素作为靶。供给溅射装置的氩气等溅射气体与作为基材硫化合物的H 2 S气体混合。用于发射中心的诸如三环戊二烯基 - 铈的稀土元素化合物在气体发生器的气化下在诸如Ar的载气的供应下被加热，从而将气化的稀土元素化合物加到溅射气体中。在上述条件下，通过高频溅射法在含有用于基材的硫的溅射气体和用于发光中心的稀土元素的溅射气氛中，在显示面板上制造电致发光发光膜。

4. 发明授权

US5482603A Method of producing electroluminescence emitting film 失效
标题翻译：电致发光发光膜的制造方法
公开(公告)号：US5482603A
公开(公告)日：1996-01-09
申请号：US055104
申请日：1993-05-03
申请人： Tomoyuki Kawashima , Harutaka Taniguchi , Hisato Kato , Kazuyoshi Shibata
发明人： Tomoyuki Kawashima , Harutaka Taniguchi , Hisato Kato , Kazuyoshi Shibata
IPC分类号： C09K11/77 , C23C14/00 , C23C14/06 , H05B33/10 , H05B33/12 , H05B33/14 , C23C14/34
CPC分类号： H05B33/10 , C09K11/7702 , C09K11/7703 , C09K11/7717 , C09K11/7718 , C09K11/773 , C09K11/7731 , C23C14/0036 , C23C14/0057 , C23C14/0623 , H05B33/14
摘要： A method of making electroluminescence emitting films each containing sulfide such as Sr, Ca, etc. as a base material and a rare earth element such as Ce, Eu, Pr, etc. as an emitting center by sputtering method, so that the electroluminescence emitting film can produce with high luminance and with various emission light colors. In the method, an element such as Sr to be sulfidized for a base material is used as a target. A sputtering gas such as Argon to be supplied to a sputtering apparatus is mixed with an H.sub.2 S gas as a base material sulfur compound. A rare earth element compound such as tris-cyclopentadienyl-cerium for an emitting center is gasified by a gas generator while being heated under supply of a carrier gas such as Ar, so that the gasified rare earth element compound is added to the sputtering gas. In the abovementioned condition, an electroluminescence emitting film is produced on a display panel by a high frequency sputtering method in a sputtering atmosphere of the sputtering gas containing sulfur for the base material and a rare earth element for the emitting center.
摘要翻译：通过溅射法制造以Sr，Ca等作为基体的硫化物和Ce，Eu，Pr等稀土类元素的电致发光发光膜的溅射法，胶片可以产生高亮度和各种发光颜色。在该方法中，作为靶材使用要被硫化的Sr等元素作为靶。供给溅射装置的氩气等溅射气体与作为基材硫化合物的H 2 S气体混合。用于发射中心的诸如三环戊二烯基 - 铈的稀土元素化合物在气体发生器的气化下在诸如Ar的载气的供应下被加热，从而将气化的稀土元素化合物加到溅射气体中。在上述条件下，通过高频溅射法在含有硫的用于基底材料的溅射气体和用于发射中心的稀土元素的溅射气氛中，在显示面板上制造电致发光发光膜。

5. 发明授权

US5660697A Electroluminescent display device and method of manufacturing same 失效
标题翻译：电致发光显示装置及其制造方法
公开(公告)号：US5660697A
公开(公告)日：1997-08-26
申请号：US460395
申请日：1995-06-02
申请人： Tomoyuki Kawashima , Harutaka Taniguchi , Hisato Kato , Kazuyoshi Shibata
发明人： Tomoyuki Kawashima , Harutaka Taniguchi , Hisato Kato , Kazuyoshi Shibata
IPC分类号： H05B33/10 , H05B33/12 , H05B33/22 , H05H1/24 , B05D5/12 , C23C14/06 , C30B28/14
CPC分类号： H05B33/22 , H05B33/10
摘要： An electroluminescent display device with decreased voltage requirements comprises:(a) a substrate having a major surface;(b) a first electrode disposed over the major surface of the substrate;(c) a first insulating film disposed over the first electrode;(d) a light-emitting film disposed over the first insulating film;(e) a second insulating film disposed over the light-emitting film; and(f) a second electrode disposed over the second insulating film. The insulating films have a columnar structure oriented perpendicular to an electric field formed between the two electrodes, and either of the insulating films may be omitted.
摘要翻译：具有降低的电压要求的电致发光显示装置包括：（a）具有主表面的基板; （b）设置在所述基板主表面上的第一电极; （c）设置在所述第一电极上的第一绝缘膜; （d）设置在所述第一绝缘膜上的发光膜; （e）设置在所述发光膜上的第二绝缘膜; 和（f）设置在所述第二绝缘膜上的第二电极。绝缘膜具有垂直于在两个电极之间形成的电场定向的柱状结构，并且可以省略任一绝缘膜。

6. 发明授权

US5403614A Method for making an electroluminescent element 失效
标题翻译：制造电致发光元件的方法
公开(公告)号：US5403614A
公开(公告)日：1995-04-04
申请号：US45904
申请日：1993-04-12
申请人： Tomoyuki Kawashima , Harutaka Taniguchi , Hisato Kato , Kazuyoshi Shibata
发明人： Tomoyuki Kawashima , Harutaka Taniguchi , Hisato Kato , Kazuyoshi Shibata
IPC分类号： G09F9/30 , C23C14/04 , H01L27/32 , H05B33/10 , H05B33/12 , H05B33/26 , B05D5/06
CPC分类号： H05B33/10 , C23C14/042
摘要： During manufacture of electroluminescent elements, layers of material are deposited upon a substrate as it is moving in a vacuum chamber beneath masks that shield the terminal regions of transparent electrodes formed upon the substrate. The masks are arranged so as to not contact the substrate, and are placed between the layer-forming material source. First insulation films, the light-emitting layers, or the second insulation films, or combinations thereof may be deposited using the method.
摘要翻译：在电致发光元件的制造期间，当衬底在保护形成在衬底上的透明电极的端子区域的掩模下的真空室中移动时，材料层沉积在衬底上。掩模布置成不接触基板，并且被放置在层形成材料源之间。可以使用该方法沉积第一绝缘膜，发光层或第二绝缘膜或其组合。

7. 发明授权

US5500103A Method for preparing thin film electro-luminescence element 失效
标题翻译：制备薄膜电致发光元件的方法
公开(公告)号：US5500103A
公开(公告)日：1996-03-19
申请号：US452729
申请日：1995-05-30
申请人： Hisato Katou , Tomoyuki Kawashima , Harutaka Taniguchi , Shin'ichi Nakamata , Kazuyoshi Shibata
发明人： Hisato Katou , Tomoyuki Kawashima , Harutaka Taniguchi , Shin'ichi Nakamata , Kazuyoshi Shibata
IPC分类号： C09K11/57 , C23C14/00 , C23C14/06 , H05B33/10 , H05B33/14 , C23C14/34
CPC分类号： H05B33/10 , C09K11/574 , C23C14/0057 , C23C14/0629 , H05B33/14
摘要： A light-emitting layer is prepared by using sputtering gas containing H.sub.2 S gas at a concentration greater than 20% by volume, and by sputtering a target under the optimal electric discharge power corresponding to the concentration of H.sub.2 S gas. A light-emitting layer having good light-emitting characteristics is obtained under a high film-forming rate.
摘要翻译：通过使用含有浓度大于20体积％的H 2 S气体的溅射气体，并且通过在对应于H 2 S气体的浓度的最佳放电功率下溅射靶来制备发光层。在高成膜速度下获得具有良好发光特性的发光层。

8. 发明授权

US5518432A Method for manufacturing thin-film EL device 失效
标题翻译：制造薄膜EL器件的方法
公开(公告)号：US5518432A
公开(公告)日：1996-05-21
申请号：US257630
申请日：1994-06-07
申请人： Hisato Katou , Tomoyuki Kawashima , Kazuyoshi Shibata , Harutaka Taniguchi , Shinichi Nakamata
发明人： Hisato Katou , Tomoyuki Kawashima , Kazuyoshi Shibata , Harutaka Taniguchi , Shinichi Nakamata
IPC分类号： C09K11/57 , C23C14/00 , C23C14/06 , C23C14/34 , H05B33/10 , H05B33/14 , H05B33/18 , H01J9/22
CPC分类号： H05B33/14 , C09K11/574 , C23C14/0057 , C23C14/0629 , C23C14/3414 , H05B33/10 , H05B33/18
摘要： A method for manufacturing a thin-film EL device utilizes a Zn-Mn target that contains less Mn than the optimum Mn concentration on the basis of the finding that the light-emitting layer grown by the sputtering method contains more Mn than in the target. Manganese concentration on the target surface layer is controlled by changing the area ratio between ZnS and Mn exposed on the surface of the target. Manganese concentration on the target surface is controlled at preferably from 0.3 to 0.4 wt % when the target surface is sulfurized during sputtering and less than 0.1 wt % when the target surface is not sulfurized.
摘要翻译：基于通过溅射法生长的发光层含有比目标中更多的Mn的发现，薄膜EL器件的制造方法使用含有比最佳Mn浓度少的Mn的Zn-Mn靶。通过改变暴露在靶表面上的ZnS和Mn之间的面积比来控制靶表面层上的锰浓度。当目标表面在溅射期间硫化时，目标表面上的锰浓度优选控制在0.3至0.4重量％，当目标表面未硫化时小于0.1重量％。

9. 发明授权

US07888173B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US07888173B2
公开(公告)日：2011-02-15
申请号：US12382412
申请日：2009-03-12
申请人： Harutaka Taniguchi , Yoshinari Ikeda
发明人： Harutaka Taniguchi , Yoshinari Ikeda
IPC分类号： H01L21/00
CPC分类号： H05K3/34 , H01L23/5385 , H01L24/01 , H01L24/32 , H01L24/33 , H01L24/73 , H01L24/83 , H01L24/91 , H01L25/072 , H01L25/50 , H01L2224/26145 , H01L2224/27013 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/83051 , H01L2224/83101 , H01L2224/83365 , H01L2224/838 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/0102 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0135 , H01L2924/014 , H01L2924/0665 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/157 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H05K1/145 , H05K2201/10166 , H05K2201/10303 , H05K2201/1059 , H05K2201/10962 , H05K2201/10969 , H05K2203/0405 , H01L2924/00 , H01L2924/07025 , H01L2924/01083 , H01L2924/01049 , H01L2924/01028
摘要： A semiconductor device manufacturing method includes the steps of preparing a semiconductor element having a first electrode, a second electrode, and a third electrode facing the first electrode and second electrode, the first electrode and second electrode being electrically separated by an insulating layer; arranging a first conductive bonding material on a first metal foil and placing the semiconductor element on the first conductive bonding material; supporting a sheet-shape second conductive bonding material by the insulating layer; arranging a first post electrode and a second post electrode above the first and second electrodes respectively with the second conductive bonding material intervening therebetween; and forming a first conductive bonding layer for bonding the first electrode and the first post electrode, a second conductive bonding layer for bonding the second electrode and the second post electrode, and a third conductive bonding layer for bonding the third electrode and the first metal foil.
摘要翻译：半导体器件制造方法包括以下步骤：制备具有第一电极，第二电极和与第一电极和第二电极相对的第三电极的半导体元件，第一电极和第二电极通过绝缘层电隔离; 在第一金属箔上布置第一导电接合材料并将半导体元件放置在第一导电接合材料上; 通过绝缘层支撑片状第二导电接合材料; 在所述第一和第二电极上方分别设置第一电极和第二电极，所述第二电极和第二电极分别与所述第二电极和所述第二电极之间插入所述第二电极和第二电极。以及形成用于接合所述第一电极和所述第一电极的第一导电接合层，用于接合所述第二电极和所述第二电极的第二导电接合层，以及用于接合所述第三电极和所述第一金属箔的第三导电接合层。

10. 发明授权

US4335369A Oxygen sensor 失效
标题翻译：氧传感器
公开(公告)号：US4335369A
公开(公告)日：1982-06-15
申请号：US194242
申请日：1980-03-14
申请人： Harutaka Taniguchi , Kenichi Hara , Hideo Shiraishi
发明人： Harutaka Taniguchi , Kenichi Hara , Hideo Shiraishi
IPC分类号： G01N27/12 , H01C17/065 , H01L7/00
CPC分类号： G01N27/12 , H01C17/065
摘要： An oxygen sensor in which a porous thick membrane (20) of transition-metal oxide and electrode metal thick membranes (14, 16) are provided on a ceramic base and these membranes are coated with a ceramic protective layer. The oxygen sensor in which the transition-metal oxide and the electrode metal are constructed in the forms of thick membranes and the protective layer is formed by plasma spray coating is mechanically tough and permits the gas to diffuse rapidly into the porous structure with rapid variation in the electric resistance depending on an oxygen partial pressure in the gas. Accordingly, the oxygen sensor may be conveniently used for detecting an oxygen content in the waste gas from automobiles.
摘要翻译： PCT No.PCT / JP79 / 00195 Sec。 371日期1980年3月14日 102（e）1980年3月14日PCT PCT。1979年7月26日。一种氧传感器，其中在陶瓷上提供过渡金属氧化物的多孔厚膜（20）和电极金属厚膜（14,16）基底，并且这些膜被涂覆有陶瓷保护层。其中过渡金属氧化物和电极金属以厚膜形式构成的氧传感器和通过等离子体喷涂形成的保护层是机械韧性的，并且允许气体快速扩散到多孔结构中，其中快速变化电阻取决于气体中的氧分压。因此，氧传感器可以方便地用于检测来自汽车的废气中的氧含量。

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