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    • 1. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20070178614A1
    • 2007-08-02
    • US11657163
    • 2007-01-24
    • Ryo ArasawaTomoyuki Iwabuchi
    • Ryo ArasawaTomoyuki Iwabuchi
    • H01L21/66
    • H01L22/32H01L27/12H01L2924/0002H01L2924/00
    • An object of the invention is to manage variation of electrical characteristics of an element in a semiconductor device due to a vapor deposition process by measuring electrical characteristics of a TEG. A substrate 100 of an active matrix EL panel includes a vapor deposition region 101 having a film formed by a vapor deposition method. In the vapor deposition region 101, a pixel region 102 is provided. A TEG 109 is provided in the vapor deposition region 101 having a film formed in a vapor deposition step and outside of the pixel region 102. A measurement terminal portion 110 for measuring the TEG 109 is provided outside of a sealing region 103.
    • 本发明的一个目的是通过测量TEG的电特性来管理由于气相沉积工艺而导致的半导体器件元件的电特性变化。 有源矩阵EL面板的基板100包括具有通过气相沉积法形成的膜的气相沉积区域101。 在蒸镀区域101中设置有像素区域102。 在蒸镀区域101中设置TEG109,该气相沉积区域101具有在气相沉积步骤中形成的膜并且在像素区域102外部。 用于测量TEG109的测量端子部分110设置在密封区域103的外侧。
    • 3. 发明申请
    • Semiconductor Device
    • 半导体器件
    • US20090153173A1
    • 2009-06-18
    • US12349325
    • 2009-01-06
    • Ryo ArasawaTomoyuki Iwabuchi
    • Ryo ArasawaTomoyuki Iwabuchi
    • G01R31/02
    • H01L22/32H01L27/12H01L2924/0002H01L2924/00
    • An object of the invention is to manage variation of electrical characteristics of an element in a semiconductor device due to a vapor deposition process by measuring electrical characteristics of a TEG. A substrate 100 of an active matrix EL panel includes a vapor deposition region 101 having a film formed by a vapor deposition method. In the vapor deposition region 101, a pixel region 102 is provided. A TEG 109 is provided in the vapor deposition region 101 having a film formed in a vapor deposition step and outside of the pixel region 102. A measurement terminal portion 110 for measuring the TEG 109 is provided outside of a sealing region 103.
    • 本发明的一个目的是通过测量TEG的电特性来管理由于气相沉积工艺而导致的半导体器件元件的电特性变化。 有源矩阵EL面板的基板100包括具有通过气相沉积法形成的膜的气相沉积区域101。 在蒸镀区域101中设置有像素区域102。 在气相沉积区域101中设置TEG109,其具有在气相沉积步骤中形成的膜并且在像素区域102外部。用于测量TEG 109的测量端子部分110设置在密封区域103的外部。
    • 5. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07479655B2
    • 2009-01-20
    • US11657163
    • 2007-01-24
    • Ryo ArasawaTomoyuki Iwabuchi
    • Ryo ArasawaTomoyuki Iwabuchi
    • H01L21/66
    • H01L22/32H01L27/12H01L2924/0002H01L2924/00
    • An object of the invention is to manage variation of electrical characteristics of an element in a semiconductor device due to a vapor deposition process by measuring electrical characteristics of a TEG. A substrate 100 of an active matrix EL panel includes a vapor deposition region 101 having a film formed by a vapor deposition method. In the vapor deposition region 101, a pixel region 102 is provided. A TEG 109 is provided in the vapor deposition region 101 having a film formed in a vapor deposition step and outside of the pixel region 102. A measurement terminal portion 110 for measuring the TEG 109 is provided outside of a sealing region 103.
    • 本发明的一个目的是通过测量TEG的电特性来管理由于气相沉积工艺而导致的半导体器件元件的电特性变化。 有源矩阵EL面板的基板100包括具有通过气相沉积法形成的膜的气相沉积区域101。 在蒸镀区域101中设置有像素区域102。 在气相沉积区域101中设置TEG109,其具有在气相沉积步骤中形成的膜并且在像素区域102外部。用于测量TEG 109的测量端子部分110设置在密封区域103的外部。
    • 7. 发明授权
    • Display device for partial display
    • 用于部分显示的显示设备
    • US07999800B2
    • 2011-08-16
    • US11494258
    • 2006-07-27
    • Tomoyuki IwabuchiRyo Arasawa
    • Tomoyuki IwabuchiRyo Arasawa
    • G06F3/038
    • G09G3/3291G02F1/13306G09G3/2011G09G3/2022G09G3/2074G09G3/3258G09G3/3614G09G3/3659G09G3/3688G09G2300/0809G09G2300/0814G09G2300/0842G09G2300/0852G09G2300/0857G09G2310/0218G09G2310/0232G09G2310/0251G09G2330/021H01L27/3244
    • In order to achieve lower power consumption, a technique of performing display (partial display) by utilizing only a part of a display area is used. For example, a display area is divided, a plurality of driver circuits for driving the divided display areas independently are provided, and only a region where a fixed pattern is displayed is driven in a power saving mode, thereby partial display is performed; however, display cannot be performed at an arbitrary position. Alternatively, partial display can be performed by inputting a video signal to a pixel in an arbitrary display area; however, a structure of a driver circuit is complicated. The object of the invention is to provide a display device which can perform partial display at an arbitrary position and reduce power consumption. In partial display, operation of a signal line driver circuit is set so as to be stopped and a non-display signal is set so as to be outputted from the signal line driver circuit when a pixel in a non-display area is selected.
    • 为了实现更低的功耗,使用仅利用显示区域的一部分进行显示(部分显示)的技术。 例如,显示区域被分割,用于独立地驱动划分的显示区域的多个驱动电路,并且仅以一个省电模式驱动显示固定图案的区域,从而进行部分显示; 然而,显示不能在任意位置执行。 或者,可以通过将视频信号输入到任意显示区域中的像素来执行部分显示; 然而,驱动电路的结构复杂。 本发明的目的是提供一种能够在任意位置执行部分显示并降低功耗的显示装置。 在部分显示中,当选择非显示区域中的像素时,信号线驱动电路的操作被设置为停止,并且设置非显示信号以便从信号线驱动电路输出。
    • 8. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07947979B2
    • 2011-05-24
    • US12349325
    • 2009-01-06
    • Ryo ArasawaTomoyuki Iwabuchi
    • Ryo ArasawaTomoyuki Iwabuchi
    • H01L23/58
    • H01L22/32H01L27/12H01L2924/0002H01L2924/00
    • An object of the invention is to manage variation of electrical characteristics of an element in a semiconductor device due to a vapor deposition process by measuring electrical characteristics of a TEG. A substrate 100 of an active matrix EL panel includes a vapor deposition region 101 having a film formed by a vapor deposition method. In the vapor deposition region 101, a pixel region 102 is provided. A TEG 109 is provided in the vapor deposition region 101 having a film formed in a vapor deposition step and outside of the pixel region 102. A measurement terminal portion 110 for measuring the TEG 109 is provided outside of a sealing region 103.
    • 本发明的一个目的是通过测量TEG的电特性来管理由于气相沉积工艺而导致的半导体器件元件的电特性变化。 有源矩阵EL面板的基板100包括具有通过气相沉积法形成的膜的气相沉积区域101。 在蒸镀区域101中设置有像素区域102。 在气相沉积区域101中设置TEG109,其具有在气相沉积步骤中形成的膜并且在像素区域102外部。用于测量TEG 109的测量端子部分110设置在密封区域103的外部。
    • 10. 发明申请
    • DISPLAY DEVICE INCLUDING LIGHT EMITTING ELEMENT
    • 显示装置,包括发光元件
    • US20110175862A1
    • 2011-07-21
    • US13006668
    • 2011-01-14
    • Atsushi UmezakiRyo Arasawa
    • Atsushi UmezakiRyo Arasawa
    • G09G5/00
    • G09G3/3233G09G2300/0861
    • Each of a plurality of pixels includes a transistor, a capacitor, and a display element. One terminal of the capacitor is electrically connected to a first line. The other terminal of the capacitor is electrically connected to a gate of the transistor. In a first period, a first terminal of the transistor is electrically connected to the gate of the transistor and the gate of the transistor is electrically connected to a second line. In a second period, the first terminal of the transistor is electrically connected to the gate of the transistor and a second terminal of the transistor is electrically connected to a third line. In a third period, the first terminal of the transistor is electrically connected to the first line and the second terminal of the transistor is electrically connected to the display element.
    • 多个像素中的每一个包括晶体管,电容器和显示元件。 电容器的一个端子电连接到第一线。 电容器的另一个端子电连接到晶体管的栅极。 在第一时段中,晶体管的第一端电连接到晶体管的栅极,并且晶体管的栅极电连接到第二线。 在第二时段中,晶体管的第一端电连接到晶体管的栅极,晶体管的第二端电连接到第三线。 在第三时段中,晶体管的第一端电连接到第一线,并且晶体管的第二端电连接到显示元件。