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1. 发明授权

US08344390B2 Thin film active element group, thin film active element array, organic light emitting device, display apparatus, and thin film active element manufacturing method 有权
标题翻译：薄膜有源元件组，薄膜有源元件阵列，有机发光器件，显示装置和薄膜有源元件制造方法
公开(公告)号：US08344390B2
公开(公告)日：2013-01-01
申请号：US12740287
申请日：2008-10-29
申请人： Tomonori Matsumuro , Kenji Kasahara , Yukiya Nishioka
发明人： Tomonori Matsumuro , Kenji Kasahara , Yukiya Nishioka
IPC分类号： H01L29/786
CPC分类号： H01L51/0545 , H01L27/283 , H01L27/3262 , H01L51/0005
摘要： The objective is to achieve an organic thin film transistor group that can be manufactured more easily and at a lower cost. Provided is a thin film active element group comprising a drive active element having a semiconductor channel layer formed in a channel region between a source electrode and a drain electrode; and a switch active element having a semiconductor channel layer formed in a channel region between a source electrode and a drain electrode, the switch active element switching the drive active element. The drive active element and the switch active element are formed to be separated from each other in a direction of a channel width such that a straight line associated with the channel region of the drive active element and a straight line associated with the channel region of the switch active element are parallel to each other. The channel region of the drive active element and the channel region of the switch active element may be aligned linearly with each other in the direction of the channel width.
摘要翻译：目的是实现更容易且更低成本地制造的有机薄膜晶体管组。提供一种薄膜有源元件组，其包括在源电极和漏电极之间的沟道区域中形成有半导体沟道层的驱动有源元件; 以及开关有源元件，其具有形成在源电极和漏电极之间的沟道区域中的半导体沟道层，所述开关有源元件切换驱动有源元件。驱动有源元件和开关有源元件被形成为在沟道宽度的方向上彼此分离，使得与驱动有源元件的沟道区域相关联的直线和与沟道区域的沟道区域相关联的直线开关有源元件彼此平行。驱动有源元件的沟道区域和开关有源元件的沟道区域可以在沟道宽度的方向上彼此线性对准。

2. 发明申请

US20100264418A1 CONTROL SUBSTRATE AND CONTROL SUBSTRATE MANUFACTURING METHOD 审中-公开
标题翻译：控制基板和控制基板制造方法
公开(公告)号：US20100264418A1
公开(公告)日：2010-10-21
申请号：US12746406
申请日：2008-12-05
申请人： Yukiya Nishioka , Tomonori Matsumuro , Kenji Kasahara
发明人： Yukiya Nishioka , Tomonori Matsumuro , Kenji Kasahara
IPC分类号： H01L33/00 , H01L29/786 , H01L21/336
CPC分类号： H01L29/458 , H01L27/1248 , H01L27/1292 , H01L27/3262 , H01L29/4908 , H01L29/78603
摘要： A control substrate comprising: a substrate main body; a base layer provided on one surface perpendicular to a thickness direction of the substrate main body; and a switching element provided on the base layer's surface located on the opposite side to the substrate main body, so as to perform switching between an electric connection and an electric disconnection, wherein the switching element comprises an electrode formed on the surface of the base layer by an application method, the surface being opposite to the substrate main body, and the base layer is formed of a member whose adhesiveness to the electrode is higher than the adhesiveness of the substrate main body to an electrode when forming the electrode on a base layer side surface of the substrate main body by an application method.
摘要翻译：一种控制基板，包括：基板主体; 基底层，设置在与所述基板主体的厚度方向垂直的一个面上; 以及设置在所述基底层的与所述基板主体相反的一侧的表面上的切换元件，以便进行电连接和断电之间的切换，其中所述开关元件包括形成在所述基底层的表面上的电极通过施加方法，与基板主体相反的表面，并且基底层由在基底层上形成电极时与电极的粘附性高于衬底主体对电极的粘附性的部件形成基板主体的侧表面。

3. 发明申请

US20110018007A1 ELECTRONIC DEVICE, DISPLAY APPARATUS, AND ELECTRONIC DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：电子设备，显示设备和电子设备制造方法
公开(公告)号：US20110018007A1
公开(公告)日：2011-01-27
申请号：US12745451
申请日：2008-11-13
申请人： Kenji Kasahara , Yukiya Nishioka , Tomonori Matsumuro
发明人： Kenji Kasahara , Yukiya Nishioka , Tomonori Matsumuro
IPC分类号： H01L27/15 , H01L23/28 , H01L21/56
CPC分类号： H01L27/3246
摘要： Provided is a solution for narrowing of a light emitting region, increasing of leak current at an edge of a functional layer, peeling of the functional layer, or the like caused by non-uniform thickness of the functional layer at the edges thereof. Provided is an electronic device comprising a substrate; a conductive functional layer formed on the substrate; and an edge covering layer that covers edges of the functional layer, wherein the functional layer includes a functional region that is not covered by the edge covering layer. This functional layer may include a non-functional region that is made non-functional by covering the functional layer with the edge covering layer. The edge covering layer may be adhered to the substrate by an adhesion force that is greater than an adhesion force between the substrate and the functional layer.
摘要翻译：提供了在功能层的边缘处的功能层的不均匀厚度引起的发光区域变窄，功能层边缘处的漏电流增加，功能层剥离等的解决方案。提供了一种包括基板的电子设备; 形成在所述基板上的导电功能层; 以及覆盖所述功能层的边缘的边缘覆盖层，其中所述功能层包括未被所述边缘覆盖层覆盖的功能区域。该功能层可以包括通过用边缘覆盖层覆盖功能层而使其不起作用的非功能区域。边缘覆盖层可以通过大于衬底和功能层之间的粘附力的粘合力粘附到衬底。

4. 发明授权

US08547182B2 Oven controlled crystal oscillator 失效
标题翻译：烤箱控制晶体振荡器
公开(公告)号：US08547182B2
公开(公告)日：2013-10-01
申请号：US13253394
申请日：2011-10-05
申请人： Hiroyuki Murakoshi , Kenji Kasahara , Daisuke Nishiyama
发明人： Hiroyuki Murakoshi , Kenji Kasahara , Daisuke Nishiyama
IPC分类号： H03B5/32 , H03B1/02
CPC分类号： H03L1/028 , H05K1/0271 , H05K3/3442 , H05K2201/09063 , H05K2201/10083 , H05K2201/10636 , Y02P70/611
摘要： Provided is an oven controlled crystal oscillator which can reduce an occurrence of cracks in an applied solder of a large-sized circuit component and improve reliability. It is an oven controlled crystal oscillator in which a slit is formed in a periphery or below a lower surface of a large-sized circuit component provided on the substrate, further, a plurality of small-sized circuit components, which are smaller than the large-sized circuit component, are disposed around the large-sized circuit component, as necessary, and for the plurality of small-sized circuit components, an electronic component, which is electrically connected, and a dummy electronic component, which is not electrically connected, are used.
摘要翻译：本发明提供一种可控制晶体振荡器，其可以减少大尺寸电路元件的焊接中出现的裂缝，提高可靠性。它是一种烤箱控制的晶体振荡器，其中在设置在基板上的大尺寸电路部件的下表面的周边或下方形成有狭缝，此外，多个小型电路部件小于大根据需要设置在大尺寸电路部件周围，对于多个小型电路部件，电连接的电子部件和未电气连接的虚拟电子部件，被使用。

5. 发明授权

US08298839B2 Manufacturing method of a thin film active element 失效
标题翻译：薄膜有源元件的制造方法
公开(公告)号：US08298839B2
公开(公告)日：2012-10-30
申请号：US12681995
申请日：2008-10-09
申请人： Kenji Kasahara
发明人： Kenji Kasahara
IPC分类号： H01L51/56 , H01L51/40
CPC分类号： H01L29/458 , H01L21/0274 , H01L27/3248 , H01L27/3262 , H01L29/41733 , H01L29/66742 , H01L29/78633 , H01L51/0023 , H01L51/0545 , H01L51/102
摘要： There is provided a thin film active element including a light-permeable substrate, a light-shielding source/drain electrode formed on the substrate, a light-permeable source/drain electrode formed on a plane surface to which the light-shielding source/drain electrode belongs, and disposed to have a gap interposed between the light-shielding source/drain electrode and the light-permeable source/drain electrode, a channel layer formed in the gap between the light-shielding source/drain electrode and the light-permeable source/drain electrode, and a gate electrode applying an electric field to the channel layer formed in the gap.
摘要翻译：提供了一种薄膜有源元件，其包括透光性基板，形成在基板上的遮光源极/漏电极，形成在平面上的透光源极/漏电极，光屏蔽源极/漏极并且被设置为在所述遮光源极/漏极和所述透光源极/漏极之间插入间隙，形成在所述遮光源极/漏极之间的间隙中的沟道层和所述透光源极/ 源极/漏极电极和向形成在间隙中的沟道层施加电场的栅电极。

6. 发明申请

US20120200366A1 OSCILLATOR 有权
标题翻译：振荡器
公开(公告)号：US20120200366A1
公开(公告)日：2012-08-09
申请号：US13358818
申请日：2012-01-26
申请人： Daisuke NISHIYAMA , Kenji Kasahara , Hiroyuki Murakoshi
发明人： Daisuke NISHIYAMA , Kenji Kasahara , Hiroyuki Murakoshi
IPC分类号： H03B5/32 , H05K3/34
CPC分类号： H03H9/10 , H03H9/13 , H05K1/111 , H05K3/3442 , H05K2201/09781 , H05K2201/10075 , H05K2201/2036 , Y10T29/42 , Y10T29/49144
摘要： An oscillator that can suppress a solder crack caused by a temperature change by a simple structure at low cost and improve heat cycle resistance performance is provided. The oscillator includes an epoxy resin board and an electronic component mounted on the board. Two-terminal electrode patterns are formed on the board, and connected to terminal electrodes of the electronic component by solder. A projection is formed on each of the electrode patterns at a part connected to a corresponding terminal electrode to create a space between the terminal electrode and the electrode pattern, and the solder forms a fillet in the space. This contributes to enhanced adhesion strength of the solder.
摘要翻译：提供了一种可以通过简单的结构以低成本抑制由温度变化引起的焊料裂纹并提高耐热循环性能的振荡器。振荡器包括环氧树脂板和安装在板上的电子部件。在电路板上形成两端电极图形，并通过焊料与电子部件的端子电极连接。在与相应的端子电极连接的部分上的每个电极图案上形成突起，以在端子电极和电极图案之间形成空间，并且焊料在该空间中形成圆角。这有助于提高焊料的粘附强度。

7. 发明申请

US20120098610A1 OVEN-CONTROLLED CRYSTAL OSCILLATOR AND MANUFACTURING METHOD OF THE SAME 失效
标题翻译：烤炉控制晶体振荡器及其制造方法
公开(公告)号：US20120098610A1
公开(公告)日：2012-04-26
申请号：US13253373
申请日：2011-10-05
申请人： Daisuke NISHIYAMA , Hiroyuki Murakoshi , Kenji Kasahara
发明人： Daisuke NISHIYAMA , Hiroyuki Murakoshi , Kenji Kasahara
IPC分类号： H03B5/32 , B23K1/20 , B23K31/02
CPC分类号： H05K3/3447
摘要： Provided are an oven controlled crystal oscillator in which in a case where a metal lead is soldered to a substrate, even if cracks occur in the solder, its reliability is not reduced, and a production method. That is, an oven controlled crystal oscillator in which pre-tinning solders are formed around openings on a front surface and a rear surface of a substrate in which of a through hole for passing a metal lead therethrough is formed; and in a state where a metal lead including a solder layer (a pre-tinning solder) formed on its surface is inserted into the through hole of the substrate, the metal lead extending from the openings is soldered to the openings on the front surface and the rear surface of the substrate, so as to form a main solder, and a production method of the oven controlled crystal oscillator are provided.
摘要翻译：提供了一种烤箱控制的晶体振荡器，其中在将金属引线焊接到基板的情况下，即使在焊料中发生裂纹，其可靠性也不降低，并且制造方法。也就是说，其中形成有用于使金属引线通过的通孔的基板的前表面和后表面上的开口周围形成预镀锡焊料的烤箱控制晶体振荡器; 并且在其表面上形成有焊锡层（预镀锡）的金属引线插入基板的贯通孔的状态下，从开口部延伸的金属引线焊接到前表面的开口部，基板的后表面，以形成主焊料，并且提供了炉控晶体振荡器的制造方法。

8. 发明授权

US08072279B2 Crystal oscillator with pedestal 失效
标题翻译：水晶振荡器与基座
公开(公告)号：US08072279B2
公开(公告)日：2011-12-06
申请号：US12657907
申请日：2010-01-29
申请人： Kenji Kasahara
发明人： Kenji Kasahara
IPC分类号： H03B5/12
CPC分类号： H05K1/141 , H05K3/305 , H05K3/306 , H05K3/3442 , H05K3/3447 , H05K2201/049 , H05K2201/09036 , H05K2201/09181 , H05K2201/09845 , H05K2201/10075 , H05K2201/2036 , H05K2203/0195 , H05K2203/1446
摘要： An object of the invention is to provide an oscillator with a pedestal that facilitates soldering operations and offers a high level of productivity. A surface mount crystal oscillator with a pedestal comprises a crystal oscillator with lead wires led out from a bottom surface of a metallic base thereof; and a pedestal having a substantially rectangular outer shape in plan view, has insertion holes through which the lead wires pass, and is attached to a bottom surface of the crystal oscillator, and has mount terminals to be electrically connected to the lead wires formed on a bottom surface thereof. The configuration is such that the insertion holes are provided in four corner sections of the pedestal, in the four corner sections of the bottom surface of the pedestal where the insertion holes are formed there is provided a recess with an open outer periphery, and the lead wire is connected to a terminal electrode formed inside the recess, using solder.
摘要翻译：本发明的目的是提供一种具有便于焊接操作的基座的振荡器，并提供高水平的生产率。具有基座的表面贴装晶体振荡器包括：晶体振荡器，其引线从其金属基底的底面引出; 并且在平面图中具有大致矩形的外形的基座具有引线通过的插入孔，并且附接到晶体振子的底面，并且具有安装端子，电连接到形成在其底面。其结构是，在基座的四个角部设置插入孔，在形成有插入孔的基座的底面的四个角部，设置有开口外周的凹部，使用焊料将导线连接到形成在凹部内部的端子电极。

9. 发明授权

US07977750B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07977750B2
公开(公告)日：2011-07-12
申请号：US12636375
申请日：2009-12-11
申请人： Hidehito Kitakado , Ritsuko Kawasaki , Kenji Kasahara
发明人： Hidehito Kitakado , Ritsuko Kawasaki , Kenji Kasahara
IPC分类号： H01L21/00
CPC分类号： H01L29/66765 , G02F1/13454 , H01L27/124 , H01L27/1255 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/78621 , H01L29/78627 , H01L29/78633
摘要： The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, LDD regions in a pixel TFT are arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in an N-channel TFT of a drive circuit is arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in a P-channel TFT of the drive circuit is arranged so as to overlap with a channel protection insulating film and to overlap with the gate electrode.
摘要翻译：本发明提供了一种半导体器件，其中布置在每个电路中的底栅TFT或反向交错TFT适当地构成为与各个电路的功能一致，从而提高了半导体器件的工作效率和可靠性。在该结构中，像素TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。驱动电路的N沟道TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。驱动电路的P沟道TFT中的LDD区域布置成与沟道保护绝缘膜重叠并与栅电极重叠。

10. 发明授权

US07122450B2 Process for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07122450B2
公开(公告)日：2006-10-17
申请号：US10098153
申请日：2002-03-15
申请人： Shunpei Yamazaki , Hisashi Ohtani , Toru Mitsuki , Hideto Ohnuma , Tamae Takano , Kenji Kasahara , Koji Dairiki
发明人： Shunpei Yamazaki , Hisashi Ohtani , Toru Mitsuki , Hideto Ohnuma , Tamae Takano , Kenji Kasahara , Koji Dairiki
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L29/66765 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78675 , H01L29/78678
摘要： A first amorphous semiconductor film is formed on an insulating surface. A catalyst element for promoting crystallization is added thereto. Thereafter, by a first heat treatment in an inert gas, a first crystalline semiconductor film is formed. A barrier layer and a second semiconductor layer are formed on the first crystalline semiconductor film. The second semiconductor layer contains a rare gas element at a concentration of 1×1019 to 2×1022/cm3, preferably 1×1020 to 1×1021/cm3 and oxygen at a concentration of 5×1017 to 1×1021/cm3. Subsequently, by a second treatment in an inert gas, the catalyst element remaining in the first crystalline semiconductor film is moved to the second semiconductor film.
摘要翻译：在绝缘表面上形成第一非晶半导体膜。加入促进结晶的催化剂元素。此后，通过在惰性气体中的第一次热处理，形成第一晶体半导体膜。在第一结晶半导体膜上形成阻挡层和第二半导体层。第二半导体层含有浓度为1×10 19至2×10 22 / cm 3的稀有气体元素，优选为1×10 20，浓度为5×10 17至1×10 21 / cm 3的氧气和1×10 12 / cm 3 ^{3 。随后，通过在惰性气体中的第二次处理，残留在第一结晶半导体膜中的催化剂元素移动到第二半导体膜。}

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