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1. 发明申请

US20100102240A1 SEMICONDUCTOR RADIATION DETECTION APPARATUS 有权
标题翻译：半导体辐射检测装置
公开(公告)号：US20100102240A1
公开(公告)日：2010-04-29
申请号：US12607348
申请日：2009-10-28
申请人： Tomonori FUKUCHI , Shinji Motomura , Shuichi Enomoto , Yousuke Kanayama
发明人： Tomonori FUKUCHI , Shinji Motomura , Shuichi Enomoto , Yousuke Kanayama
IPC分类号： G01T1/29
CPC分类号： G01T1/2928
摘要： The apparatus has an energy calculation section 32 that calculates energy deposit values of interactions based on signals obtained from segmented electrodes 11, 12 provided on two opposite surfaces of a semiconductor crystal, a reference waveform storing section 33 that stores beforehand waveforms that will be obtained from the segmented electrodes when a single interaction occurs for multiple positions in the crystal, a waveform synthesis section 34 that synthesizes reference waveforms corresponding to arbitrary two points in the crystal as candidate points of interaction at a ratio equal to a ratio of their energy deposit values, and a comparison section 35 that compares a measured waveform and the synthesized waveforms. The candidate points from which the synthesized waveform most similar to the measured waveform is obtained is determined to be the positions of interactions. Thus, even in cases where multiple interactions occur, the positions of the interactions can be detected.
摘要翻译：该装置具有能量计算部32，该能量计算部32基于从设置在半导体晶体的两个相对面的分割电极11,12获得的信号来计算相互作用的能量存储值，基准波形存储部33预先存储将从当晶体中的多个位置发生单个相互作用时的分段电极;波形合成部分34，其以与等于其能量沉积值的比率的比率合成与晶体中的任意两个点相对应的参考波形作为候选交互点，比较测量波形和合成波形的比较部分35。获得与测量波形最相似的合成波形的候选点被确定为相互作用的位置。因此，即使在发生多次相互作用的情况下，也可以检测相互作用的位置。

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