会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明申请
    • LAMINATED INDUCTOR
    • 层压电感器
    • US20130033347A1
    • 2013-02-07
    • US13426404
    • 2012-03-21
    • Hitoshi MATSUURATakayuki ARAIKenji OTAKE
    • Hitoshi MATSUURATakayuki ARAIKenji OTAKE
    • H01F27/02
    • H01F17/0013H01F17/0033
    • A laminated inductor having an internal conductive wire forming region, as well as a top cover region and bottom cover region formed in a manner sandwiching the internal conductive wire forming region between top and bottom; wherein the internal conductive wire forming region has a magnetic part formed with soft magnetic alloy grains, as well as helical internal conductive wires embedded in the magnetic part and constituted by a conductor; and at least one of the top cover region and bottom cover region (or preferably both) is/are formed with soft magnetic alloy grains whose constituent elements are of the same types as those of, and whose average grain size is greater than that of, the soft magnetic alloy grains constituting the magnetic part in the internal conductive wire forming region.
    • 具有内部导电线形成区域的层叠电感器,以及以在顶部和底部之间夹入内部导电线形成区域的方式形成的顶部覆盖区域和底部覆盖区域; 其特征在于,所述内部导线形成区域具有形成有软磁性合金晶粒的磁性部分,以及嵌入在所述磁性部分中并由导体构成的螺旋状内部导电线; 并且顶盖区域和底盖区域(或优选两者)中的至少一个由软磁性合金晶粒形成,其软磁性合金晶粒的组成元素与其平均晶粒尺寸大于其平均晶粒尺寸, 构成内部导线形成区域中的磁性部分的软磁性合金粒子。
    • 9. 发明申请
    • P-CHANNEL POWER MOSFET
    • P沟道功率MOSFET
    • US20110215399A1
    • 2011-09-08
    • US13039294
    • 2011-03-02
    • Hitoshi MATSUURAYoshito Nakazawa
    • Hitoshi MATSUURAYoshito Nakazawa
    • H01L29/78
    • H01L29/7813H01L29/0619H01L29/407H01L29/4983H01L29/78
    • In characteristic test measurements of double-gate-in-trench p-channel power MOSFETs each having a p+ polysilicon gate electrode and a p+ field plate electrode in a trench, which were fabricated according to common design techniques, it has been found that, under conditions where a negative gate bias is applied continuously at high temperature with respect to the substrate, an absolute value of threshold voltage tends to increase steeply after the lapse of a certain period of stress application time. To solve this problem, the present invention provides a p-channel power MOSFET having an n-type polysilicon linear field plate electrode and an n-type polysilicon linear gate electrode in each trench part thereof.
    • 在沟槽中具有p +多晶硅栅电极和p +场板电极的双栅沟槽p沟道功率MOSFET的特性测试测量中,根据常规设计技术制造,已经发现, 在高温下相对于衬底连续施加负栅极偏压的条件下,阈值电压的绝对值在经过一定的压力施加时间之后倾向于急剧增加。 为了解决这个问题,本发明提供一种在其每个沟槽部分中具有n型多​​晶硅线性场极板电极和n型多晶硅线性栅极电极的p沟道功率MOSFET。