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1. 发明授权

US07579669B2 Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof 失效
标题翻译：包括功率MOS场效应晶体管和其驱动电路驱动的半导体器件
公开(公告)号：US07579669B2
公开(公告)日：2009-08-25
申请号：US11549297
申请日：2006-10-16
申请人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita , Akio Nakagawa
发明人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita , Akio Nakagawa
IPC分类号： H01L27/00
CPC分类号： H02M3/158 , H01L27/0922 , H01L29/41758 , H01L29/41775 , H01L29/42368 , H01L29/42376 , H01L29/4238 , H01L29/7813 , H01L29/7835 , H01L2924/0002 , H02M1/08 , H02M7/003 , H01L2924/00
摘要： A semiconductor device comprises a high side switching element, a driver circuit, and a low side switching element. The high side switching element is formed on a first semiconductor substrate, has a current path to one end of which an input voltage is supplied, and the other end of the current path is connected to an inductance. The driver circuit is formed on the first semiconductor substrate, on which the high side switching element is formed, and drives the high side switching element. The low side switching element is formed on a second semiconductor substrate separate from the first semiconductor substrate, and has a drain connected to the inductance and a source supplied with a reference potential.
摘要翻译：半导体器件包括高侧开关元件，驱动电路和低侧开关元件。高侧开关元件形成在第一半导体基板上，其一端具有输入电压的电流通路，电流路径的另一端与电感连接。驱动电路形成在形成有高侧开关元件的第一半导体基板上，驱动高侧开关元件。低侧开关元件形成在与第一半导体衬底分离的第二半导体衬底上，并且具有连接到电感的漏极和被提供参考电位的源极。

2. 发明授权

US07138698B2 Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof 失效
公开(公告)号：US07138698B2
公开(公告)日：2006-11-21
申请号：US11007254
申请日：2004-12-09
申请人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita , Akio Nakagawa
发明人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita , Akio Nakagawa
IPC分类号： H01L23/58
CPC分类号： H02M3/158 , H01L27/0922 , H01L29/41758 , H01L29/41775 , H01L29/42368 , H01L29/42376 , H01L29/4238 , H01L29/7813 , H01L29/7835 , H01L2924/0002 , H02M1/08 , H02M7/003 , H01L2924/00
摘要： A semiconductor device comprises a high side switching element, a driver circuit, and a low side switching element. The high side switching element is formed on a first semiconductor substrate, has a current path to one end of which an input voltage is supplied, and the other end of the current path is connected to an inductance. The driver circuit is formed on the first semiconductor substrate, on which the high side switching element is formed, and drives the high side switching element. The low side switching element is formed on a second semiconductor substrate separate from the first semiconductor substrate, and has a drain connected to the inductance and a source supplied with a reference potential.

3. 发明申请

US20100006936A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100006936A1
公开(公告)日：2010-01-14
申请号：US12476147
申请日：2009-06-01
申请人： Tomoko Matsudai , Norio Yasuhara , Kazutoshi Nakamura
发明人： Tomoko Matsudai , Norio Yasuhara , Kazutoshi Nakamura
IPC分类号： H01L29/78
CPC分类号： H01L29/7835 , H01L21/266 , H01L29/0847 , H01L29/1045 , H01L29/1083 , H01L29/1087 , H01L29/66659
摘要： A semiconductor device includes a semiconductor layer of a first conductivity type; a deep well of a second conductivity type formed in a portion of an upper layer portion of the semiconductor layer; a well of the first conductivity type formed in a portion of an upper layer portion of the deep well; a source layer of the second conductivity type formed in the well; a drain layer of the second conductivity type formed in the well apart from the source layer; and a contact layer of the second conductivity type formed outside the well in an upper layer portion of the deep well and connected to the drain layer. The drain layer is electrically connected to the deep well via the well by applying a driving voltage between the source layer and the drain layer.
摘要翻译：半导体器件包括第一导电类型的半导体层; 形成在半导体层的上层部分的一部分中的第二导电类型的深阱; 形成在深井的上层部分的一部分中的第一导电类型的阱; 在井中形成的第二导电类型的源极层; 第二导电类型的漏极层形成在远离源极的阱中; 以及在阱的上层部分中形成在阱外部并连接到漏极层的第二导电类型的接触层。通过在源极层和漏极层之间施加驱动电压，漏极层通过阱与深阱电连接。

4. 发明申请

US20110133818A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20110133818A1
公开(公告)日：2011-06-09
申请号：US13022611
申请日：2011-02-07
申请人： Tomoko MATSUDAI , Norio Yasuhara , Kazutoshi Nakamura
发明人： Tomoko MATSUDAI , Norio Yasuhara , Kazutoshi Nakamura
IPC分类号： H03K3/01 , H01L29/78
CPC分类号： H01L29/7835 , H01L21/266 , H01L29/0847 , H01L29/1045 , H01L29/1083 , H01L29/1087 , H01L29/66659
摘要： A semiconductor device includes a semiconductor layer of a first conductivity type; a deep well of a second conductivity type formed in a portion of an upper layer portion of the semiconductor layer; a well of the first conductivity type formed in a portion of an upper layer portion of the deep well; a source layer of the second conductivity type formed in the well; a drain layer of the second conductivity type formed in the well apart from the source layer; and a contact layer of the second conductivity type formed outside the well in an upper layer portion of the deep well and connected to the drain layer. The drain layer is electrically connected to the deep well via the well by applying a driving voltage between the source layer and the drain layer.
摘要翻译：半导体器件包括第一导电类型的半导体层; 形成在半导体层的上层部分的一部分中的第二导电类型的深阱; 形成在深井的上层部分的一部分中的第一导电类型的阱; 在井中形成的第二导电类型的源极层; 第二导电类型的漏极层形成在远离源极的阱中; 以及在阱的上层部分中形成在阱外部并连接到漏极层的第二导电类型的接触层。通过在源极层和漏极层之间施加驱动电压，漏极层通过阱与深阱电连接。

5. 发明授权

US08212310B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08212310B2
公开(公告)日：2012-07-03
申请号：US13022611
申请日：2011-02-07
申请人： Tomoko Matsudai , Norio Yasuhara , Kazutoshi Nakamura
发明人： Tomoko Matsudai , Norio Yasuhara , Kazutoshi Nakamura
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7835 , H01L21/266 , H01L29/0847 , H01L29/1045 , H01L29/1083 , H01L29/1087 , H01L29/66659
摘要： A semiconductor device includes a semiconductor layer of a first conductivity type; a deep well of a second conductivity type formed in a portion of an upper layer portion of the semiconductor layer; a well of the first conductivity type formed in a portion of an upper layer portion of the deep well; a source layer of the second conductivity type formed in the well; a drain layer of the second conductivity type formed in the well apart from the source layer; and a contact layer of the second conductivity type formed outside the well in an upper layer portion of the deep well and connected to the drain layer. The drain layer is electrically connected to the deep well via the well by applying a driving voltage between the source layer and the drain layer.
摘要翻译：半导体器件包括第一导电类型的半导体层; 形成在半导体层的上层部分的一部分中的第二导电类型的深阱; 形成在深井的上层部分的一部分中的第一导电类型的阱; 在井中形成的第二导电类型的源极层; 第二导电类型的漏极层形成在远离源极的阱中; 以及在阱的上层部分中形成在阱外部并连接到漏极层的第二导电类型的接触层。通过在源极层和漏极层之间施加驱动电压，漏极层通过阱与深阱电连接。

6. 发明授权

US08110924B2 Semiconductor device and method for manufacturing same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08110924B2
公开(公告)日：2012-02-07
申请号：US12408390
申请日：2009-03-20
申请人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Daisuke Minohara
发明人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Daisuke Minohara
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/585 , H01L23/522 , H01L23/552 , H01L24/11 , H01L2224/0231 , H01L2224/0401 , H01L2224/1132 , H01L2224/1191 , H01L2224/13022 , H01L2224/13025 , H01L2224/13099 , H01L2224/1411 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01051 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/19041 , H01L2924/19042 , H01L2924/30105 , H01L2924/30107 , H01L2924/351 , H01L2924/00
摘要： In a DC-DC converter, a multilayer wiring layer is provided on a silicon substrate, and a control circuit configured to control an input circuit and an output circuit is formed in the silicon substrate and the multilayer wiring layer. Moreover, a sealing resin layer covering the multilayer wiring layer and a connecting member connected to an uppermost wiring of the multilayer wiring layer, penetrating the sealing resin layer and having an upper end portion protruding from an upper surface of the sealing resin layer are provided. The upper end portion of the connecting member is formed from a protruding electrode. Horizontal cross-sectional area of the connecting member connected to terminals of the output circuit is larger than horizontal cross-sectional area of the connecting member connected to terminals of the control circuit.
摘要翻译：在DC-DC转换器中，在硅衬底上设置多层布线层，并且在硅衬底和多层布线层中形成控制输入电路和输出电路的控制电路。此外，设置覆盖多层布线层的密封树脂层和连接到多层布线层的最上布线的连接构件，其穿透密封树脂层并具有从密封树脂层的上表面突出的上端部。连接构件的上端部由突出电极形成。与输出电路的端子连接的连接构件的水平横截面面积大于与控制电路的端子连接的连接构件的水平截面积。

7. 发明授权

US07906808B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07906808B2
公开(公告)日：2011-03-15
申请号：US12476147
申请日：2009-06-01
申请人： Tomoko Matsudai , Norio Yasuhara , Kazutoshi Nakamura
发明人： Tomoko Matsudai , Norio Yasuhara , Kazutoshi Nakamura
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7835 , H01L21/266 , H01L29/0847 , H01L29/1045 , H01L29/1083 , H01L29/1087 , H01L29/66659
摘要： A semiconductor device includes a semiconductor layer of a first conductivity type; a deep well of a second conductivity type formed in a portion of an upper layer portion of the semiconductor layer; a well of the first conductivity type formed in a portion of an upper layer portion of the deep well; a source layer of the second conductivity type formed in the well; a drain layer of the second conductivity type formed in the well apart from the source layer; and a contact layer of the second conductivity type formed outside the well in an upper layer portion of the deep well and connected to the drain layer. The drain layer is electrically connected to the deep well via the well by applying a driving voltage between the source layer and the drain layer.
摘要翻译：半导体器件包括第一导电类型的半导体层; 形成在半导体层的上层部分的一部分中的第二导电类型的深阱; 形成在深井的上层部分的一部分中的第一导电类型的阱; 在井中形成的第二导电类型的源极层; 第二导电类型的漏极层形成在远离源极的阱中; 以及在阱的上层部分中形成在阱外部并连接到漏极层的第二导电类型的接触层。通过在源极层和漏极层之间施加驱动电压，漏极层通过阱与深阱电连接。

8. 发明申请

US20060097292A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20060097292A1
公开(公告)日：2006-05-11
申请号：US11261531
申请日：2005-10-31
申请人： Kazutoshi Nakamura , Tomoko Matsudai , Norio Yasuhara
发明人： Kazutoshi Nakamura , Tomoko Matsudai , Norio Yasuhara
IPC分类号： H01L29/76
CPC分类号： H01L29/0847 , H01L29/1045 , H01L29/42368 , H01L29/7835
摘要： A semiconductor device includes a second conductivity type layer selectively formed by changing impurity concentrations on a semiconductor substrate, a first conductivity type source region formed on the second conductivity type layer, a first conductivity type drain region formed on the second conductivity type layer apart from the first conductivity type source region, a gate electrode formed between the first conductivity type source region and the first conductivity type drain region across an insulation film, and a second conductivity type contact layer formed adjacent to the first conductivity type source region, wherein the second conductivity type layer in the source region side has a higher impurity concentration than the impurity concentration of the second conductivity type layer in the drain region side.
摘要翻译：半导体器件包括通过改变半导体衬底上的杂质浓度选择性地形成的第二导电类型层，形成在第二导电类型层上的第一导电型源极区，形成在第二导电类型层上的第一导电类型漏极区，第一导电型源极区，形成在绝缘膜之间的第一导电型源极区域和第一导电型漏极区域之间的栅电极和与第一导电型源极区域相邻形成的第二导电型接触层，其中第二导电型源极区域源极区侧的杂质浓度比漏区侧的第二导电型层的杂质浓度高。

9. 发明申请

US20070063307A1 Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof 失效
标题翻译：包括功率MOS场效应晶体管和其驱动电路驱动的半导体器件
公开(公告)号：US20070063307A1
公开(公告)日：2007-03-22
申请号：US11549297
申请日：2006-10-16
申请人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita , Akio Nakagawa
发明人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita , Akio Nakagawa
IPC分类号： H01L23/58
CPC分类号： H02M3/158 , H01L27/0922 , H01L29/41758 , H01L29/41775 , H01L29/42368 , H01L29/42376 , H01L29/4238 , H01L29/7813 , H01L29/7835 , H01L2924/0002 , H02M1/08 , H02M7/003 , H01L2924/00
摘要： A semiconductor device comprises a high side switching element, a driver circuit, and a low side switching element. The high side switching element is formed on a first semiconductor substrate, has a current path to one end of which an input voltage is supplied, and the other end of the current path is connected to an inductance. The driver circuit is formed on the first semiconductor substrate, on which the high side switching element is formed, and drives the high side switching element. The low side switching element is formed on a second semiconductor substrate separate from the first semiconductor substrate, and has a drain connected to the inductance and a source supplied with a reference potential.
摘要翻译：半导体器件包括高侧开关元件，驱动电路和低侧开关元件。高侧开关元件形成在第一半导体基板上，其一端具有输入电压的电流通路，电流路径的另一端与电感连接。驱动电路形成在形成有高侧开关元件的第一半导体基板上，驱动高侧开关元件。低侧开关元件形成在与第一半导体衬底分离的第二半导体衬底上，并且具有连接到电感的漏极和被提供参考电位的源极。

10. 发明申请

US20050179472A1 Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof 失效
标题翻译：包括功率MOS场效应晶体管和其驱动电路驱动的半导体器件
公开(公告)号：US20050179472A1
公开(公告)日：2005-08-18
申请号：US11007254
申请日：2004-12-09
申请人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita , Akio Nakagawa
发明人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita , Akio Nakagawa
IPC分类号： H01L29/00 , H01L29/78 , H02M1/08 , H02M3/00 , H02M3/158 , H02M7/00 , H03B1/00
CPC分类号： H02M3/158 , H01L27/0922 , H01L29/41758 , H01L29/41775 , H01L29/42368 , H01L29/42376 , H01L29/4238 , H01L29/7813 , H01L29/7835 , H01L2924/0002 , H02M1/08 , H02M7/003 , H01L2924/00
摘要： A semiconductor device comprises a high side switching element, a driver circuit, and a low side switching element. The high side switching element is formed on a first semiconductor substrate, has a current path to one end of which an input voltage is supplied, and the other end of the current path is connected to an inductance. The driver circuit is formed on the first semiconductor substrate, on which the high side switching element is formed, and drives the high side switching element. The low side switching element is formed on a second semiconductor substrate separate from the first semiconductor substrate, and has a drain connected to the inductance and a source supplied with a reference potential.
摘要翻译：半导体器件包括高侧开关元件，驱动电路和低侧开关元件。高侧开关元件形成在第一半导体基板上，其一端具有输入电压的电流通路，电流路径的另一端与电感连接。驱动电路形成在形成有高侧开关元件的第一半导体基板上，驱动高侧开关元件。低侧开关元件形成在与第一半导体衬底分离的第二半导体衬底上，并且具有连接到电感的漏极和被提供参考电位的源极。

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