专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090128965A1 CPP MAGNETO-RESISTIVE ELEMENT PROVIDED WITH A PAIR OF MAGNETIC LAYERS AND NICR BUFFER LAYER 审中-公开
标题翻译： CPP磁电元件提供一对磁性层和NICR缓冲层
公开(公告)号：US20090128965A1
公开(公告)日：2009-05-21
申请号：US11940511
申请日：2007-11-15
申请人： Tomohito MIZUNO , Yoshihiro TSUCHIYA , Shinji HARA , Koji SHIMAZAWA , Daisuke MIYAUCHI , Takahiko MACHITA , Tsutomu CHOU , Toshiyuki AYUKAWA , Hironobu MATSUZAWA , Tsuyoshi ICHIKI
发明人： Tomohito MIZUNO , Yoshihiro TSUCHIYA , Shinji HARA , Koji SHIMAZAWA , Daisuke MIYAUCHI , Takahiko MACHITA , Tsutomu CHOU , Toshiyuki AYUKAWA , Hironobu MATSUZAWA , Tsuyoshi ICHIKI
IPC分类号： G11B5/33
CPC分类号： G11B5/3912 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3932 , H01L43/10
摘要： A magnetic field detecting element has a stack which includes a NiCr layer, a first magnetic layer whose magnetization direction varies in accordance with an external magnetic field, a non-magnetic spacer layer, and a second magnetic layer whose magnetization direction varies in accordance with the external magnetic field, said NiCr layer, said first magnetic layer, said spacer layer and said second magnetic layer being disposed in this order and being arranged in contact with each other, wherein a sense current is adapted to flow in a direction that is perpendicular to a film surface of said stack; and a bias magnetic layer which is disposed on a side of said stack, said side being opposite to an air bearing surface of said stack, wherein said bias magnetic layer is adapted to apply a bias magnetic field to said stack in a direction that is perpendicular to said air bearing surface. Both first and second magnetic layers have bcc crystalline structures, and said non-magnetic spacer layer has a film configuration in which an insulating layer or a semiconductor layer is inserted into a metal layer.
摘要翻译：磁场检测元件具有堆叠，其包括NiCr层，其磁化方向根据外部磁场变化的第一磁性层，非磁性间隔层和其磁化方向根据外部磁场，所述NiCr层，所述第一磁性层，所述间隔层和所述第二磁性层按此顺序设置并且彼此接触，其中感测电流适于沿垂直于所述堆叠的膜表面; 以及偏置磁性层，其设置在所述堆叠的一侧，所述侧面与所述堆叠的空气支承表面相对，其中所述偏置磁性层适于在垂直方向上向所述堆叠施加偏置磁场到所述空气轴承表面。第一和第二磁性层都具有bcc晶体结构，并且所述非磁性间隔层具有绝缘层或半导体层插入到金属层中的膜结构。

2. 发明申请

US20080204942A1 MAGNETIC THIN FILM HAVING SPACER LAYER THAT CONTAINS CuZn 有权
标题翻译：具有包含CuZn的间隔层的磁薄膜
公开(公告)号：US20080204942A1
公开(公告)日：2008-08-28
申请号：US11678506
申请日：2007-02-23
申请人： Takahiko MACHITA , Tomohito MIZUNO , Yoshihiro TSUCHIYA , Daisuke MIYAUCHI , Shinji HARA
发明人： Takahiko MACHITA , Tomohito MIZUNO , Yoshihiro TSUCHIYA , Daisuke MIYAUCHI , Shinji HARA
IPC分类号： G11B5/127
CPC分类号： G11B5/398 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F41/307 , Y10T29/4903 , Y10T29/49043
摘要： A magnetic thin film has a pinned layer whose magnetization direction is fixed with respect to an external magnetic field, a free layer whose magnetization direction is changed according to the external magnetic field, and a spacer layer which is sandwiched between said pinned layer and said free layer. Sense current is configured to flow in a direction that is perpendicular to film surfaces of said pinned layer, said spacer layer, and said free layer. Said spacer layer has a CuZn metal alloy which includes an oxide region, said oxide region consisting of an oxide of any of Al, Si, Cr, Ti, Hf, Zr, Zn, and Mg.
摘要翻译：磁性薄膜具有相对于外部磁场的磁化方向固定的固定层，其磁化方向根据外部磁场而变化的自由层和夹在所述被钉扎层和所述自由层之间的间隔层层。感应电流被配置为沿着垂直于所述被钉扎层，所述间隔层和所述自由层的膜表面的方向流动。所述间隔层具有包括氧化物区域的CuZn金属合金，所述氧化物区域由Al，Si，Cr，Ti，Hf，Zr，Zn和Mg中的任一种的氧化物组成。

3. 发明申请

US20090109580A1 MAGNETIC FIELD DETECTING ELEMENT INCLUDING TRI-LAYER STACK WITH STEPPED PORTION 有权
标题翻译：磁场检测元件，包括带有步进部分的三层堆叠
公开(公告)号：US20090109580A1
公开(公告)日：2009-04-30
申请号：US11925030
申请日：2007-10-26
申请人： Toshiyuki AYUKAWA , Daisuke MIYAUCHI , Koji SHIMAZAWA , Takahiko MACHITA
发明人： Toshiyuki AYUKAWA , Daisuke MIYAUCHI , Koji SHIMAZAWA , Takahiko MACHITA
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A magnetic field detecting element comprises; a stack including an upper magnetic layer and a lower magnetic layer, and a non-magnetic intermediate layer sandwiched between said upper magnetic layer and said lower magnetic layer, wherein magnetization of said upper magnetic layer and said lower magnetic layer changes in accordance with an external magnetic field; an upper shield electrode layer and a lower shield electrode layer which is provided to sandwich said stack therebetween in a direction of the stacking of said stack, wherein said upper shield electrode layer and said lower shield electrode layer supply sense current in the direction of stacking, and magnetically shield said stack; a bias magnetic layer which is provided on a surface of said stack opposite to an air bearing surface, and wherein said bias magnetic layer applies a bias magnetic field to said upper magnetic layer and said lower magnetic layer in a direction perpendicular to the air bearing surface; and insulating layers which are provided on both sides of said stack in a track width direction thereof, wherein a stepped portion is formed so that a length of said upper magnetic layer in the track width direction is different from that of said lower magnetic layer.
摘要翻译：磁场检测元件包括：包括上磁性层和下磁性层的堆叠以及夹在所述上磁性层和所述下磁性层之间的非磁性中间层，其中所述上磁性层和所述下磁性层的磁化根据外部磁性层而变化磁场; 上屏蔽电极层和下屏蔽电极层，其设置成在堆叠的堆叠方向上夹着所述堆叠，其中所述上屏蔽电极层和所述下屏蔽电极层沿堆叠方向提供感测电流，并且磁屏蔽所述堆叠; 偏置磁性层，其设置在与空气轴承表面相对的所述堆叠的表面上，并且其中所述偏磁层在与所述空气轴承表面垂直的方向上向所述上磁性层和所述下磁性层施加偏置磁场 ; 以及设置在所述堆叠的轨道宽度方向两侧的绝缘层，其中形成台阶部分，使得所述上磁性层在轨道宽度方向上的长度与所述下磁性层的长度不同。

4. 发明申请

US20090207534A1 MAGNETO-RESISTANCE EFFECT ELEMENT INCLUDING STACK WITH DUAL FREE LAYER AND MAGNETIZED SHIELD ELECTRODE LAYERS 审中-公开
标题翻译：磁电阻效应元件，包括具有双层和磁性屏蔽电极层的堆叠
公开(公告)号：US20090207534A1
公开(公告)日：2009-08-20
申请号：US12033292
申请日：2008-02-19
申请人： Daisuke MIYAUCHI , Koji SHIMAZAWA , Tsutomu CHOU , Takahiko MACHITA
发明人： Daisuke MIYAUCHI , Koji SHIMAZAWA , Tsutomu CHOU , Takahiko MACHITA
IPC分类号： G11B5/39 , G11B5/012 , G01R33/09 , G11B5/00
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3912 , G11B5/3932 , G11B5/398 , H01F10/3263 , H01L43/08
摘要： A magneto-resistance effect element comprises; a magneto-resistance effect stack including an upper magnetic layer and a lower magnetic layer in which respective magnetization directions change in accordance with an external magnetic field, a non-magnetic intermediate layer sandwiched between the upper and lower magnetic layers, an upper gap adjustment layer and a lower gap adjustment layer provided at respective ends in the direction of stacking the magneto-resistance effect stack, an upper exchange coupling transmission layer configured to generate exchange coupling between the upper magnetic layer and the upper gap adjustment layer, and a lower exchange coupling transmission layer configured to generate exchange coupling between the lower magnetic layer and the lower gap adjustment layer; an upper shield electrode layer and a lower shield electrode layer which are provided to sandwich the magneto-resistance effect stack therebetween in the direction of stacking the magneto-resistance effect stack, wherein the upper shield electrode layer and the lower shield electrode layer supply sense current in the direction of stacking, and magnetically shield the magneto-resistance effect stack; and a bias magnetic layer which is provided on a surface of the magneto-resistance effect stack opposite to an air bearing surface, and wherein the bias magnetic layer applies a bias magnetic field to the upper and lower magnetic layers in a direction perpendicular to the air bearing surface, wherein the upper and lower shield electrode layers are each magnetized in a track width direction by a magnetization controller, and the upper and lower gap adjustment layers are composed of a material having a higher magnetic permeability and a lower saturation magnetic flux density than the upper and lower shield electrode layers respectively.
摘要翻译：磁阻效应元件包括：包括上磁化层和下磁性层的磁电阻效应堆，其中磁化方向各自根据外部磁场而变化，夹在上下磁层之间的非磁性中间层，上间隙调整层以及设置在层叠磁阻效应堆叠方向的各端的下间隙调整层，被配置为产生上磁性层和上间隙调整层之间的交换耦合的上交换耦合传输层，以及下交换耦合传输层，其被配置为在所述下磁性层和所述下间隙调整层之间产生交换耦合; 上屏蔽电极层和下屏蔽电极层，其被设置成在堆叠磁阻效应堆叠的方向上夹着磁阻效应堆叠，其中上屏蔽电极层和下屏蔽电极层提供感测电流在层叠方向上磁屏蔽磁阻效应堆; 以及设置在与空气轴承表面相对的磁阻效应堆的表面上的偏置磁性层，并且其中偏置磁性层在与空气垂直的方向上向上磁层和下磁层施加偏置磁场其中上下屏蔽电极层通过磁化控制器在磁道宽度方向上磁化，上下间隙调整层由具有较高磁导率和较低饱和磁通密度的材料构成，上，下屏蔽电极层。

5. 发明申请

US20080226948A1 MAGNETO-RESISTANCE EFFECT ELEMENT HAVING DIFFUSION BLOCKING LAYER AND THIN-FILM MAGNETIC HEAD 有权
标题翻译：具有扩散阻挡层和薄膜磁头的磁阻效应元件
公开(公告)号：US20080226948A1
公开(公告)日：2008-09-18
申请号：US11685021
申请日：2007-03-12
申请人： Tomohito MIZUNO , Takahiko MACHITA , Kei HIRATA , Yoshihiro TSUCHIYA , Shinji HARA
发明人： Tomohito MIZUNO , Takahiko MACHITA , Kei HIRATA , Yoshihiro TSUCHIYA , Shinji HARA
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906 , H01F10/3259 , H01F10/3272 , Y10T428/1121
摘要： A magnetoresistance effect element (MR element) for use in a thin-film magnetic head has a buffer layer, an antiferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer that are successively stacked. A sense current flows in a direction perpendicular to layer surfaces via a lower shield layer and an upper shield layer. The pinned layer comprises an outer layer having a fixed magnetization direction, a nonmagnetic intermediate layer, and an inner layer in the form of a ferromagnetic layer. The spacer layer comprises a first nonmagnetic metal layer, a semiconductor layer made of ZnO, and a second nonmagnetic metal layer. The inner layer or the outer layer includes a diffusion blocking layer made of an oxide of an element whose electronegativity is equal to or smaller than Zn, e.g., ZnO, TaO, ZrO, MgO, TiO, or HfO, or made of RuO.
摘要翻译：用于薄膜磁头的磁阻效应元件（MR元件）具有依次层叠的缓冲层，反铁磁层，钉扎层，间隔层，自由层和盖层。感测电流通过下屏蔽层和上屏蔽层在垂直于层表面的方向上流动。被钉扎层包括具有固定磁化方向的外层，非磁性中间层和呈铁磁层形式的内层。间隔层包括第一非磁性金属层，由ZnO制成的半导体层和第二非磁性金属层。内层或外层包括由电负性等于或小于Zn的元素的氧化物（例如ZnO，TaO，ZrO，MgO，TiO或HfO）或由RuO制成的扩散阻挡层。

6. 发明申请

US20080198515A1 THIN FILM MAGNETIC HEAD HAVING A BIAS MAGNETIC LAYER PROVIDED WITH ANTIFERROMAGNETIC LAYER AND A PINNED LAYER PROVIDED WITH HARD MAGNETIC LAYER 有权
标题翻译：具有抗静电层和提供有硬磁层的固定层的偏磁磁层的薄膜磁头
公开(公告)号：US20080198515A1
公开(公告)日：2008-08-21
申请号：US11676961
申请日：2007-02-20
申请人： Daisuke MIYAUCHI , Shinji HARA , Takahiko MACHITA
发明人： Daisuke MIYAUCHI , Shinji HARA , Takahiko MACHITA
IPC分类号： G11B5/127
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A thin film magnetic head has: a spin valve having a pinned layer whose magnetization direction is fixed relative to an external magnetic field, a first nonmagnetic intermediate layer which is disposed on said pinned layer, and a free layer whose magnetization direction is changed according to the external magnetic field, said free layer being disposed on said first nonmagnetic intermediate layer; and bias magnetic layers for applying a bias magnetic field to said free layer, said bias magnetic layers being provided on both sides of said spin valve with regard to a track width direction thereof. The pinned layer has a hard magnetic layer, a second nonmagnetic intermediate layer which is disposed on said hard magnetic layer, and a ferromagnetic layer which is disposed on said second nonmagnetic intermediate layer. The bias magnetic layer has a bias antiferromagnetic layer, and a bias ferromagnetic layer which is disposed on said bias antiferromagnetic layer. The pinned layer is formed in a manner such that a height direction dimension thereof is longer than a track width direction dimension thereof, and is longer than a height direction dimension of said free layer.
摘要翻译：薄膜磁头具有：具有相对于外部磁场固定其磁化方向的钉扎层的自旋阀，设置在所述被钉扎层上的第一非磁性中间层和其磁化方向根据外部磁场，所述自由层设置在所述第一非磁性中间层上; 以及用于向所述自由层施加偏置磁场的偏置磁性层，所述偏置磁性层相对于磁道宽度方向设置在所述自旋阀的两侧。被钉扎层具有硬磁性层，设置在所述硬磁性层上的第二非磁性中间层和设置在所述第二非磁性中间层上的铁磁层。偏置磁性层具有偏置反铁磁层，偏置铁磁层设置在所述偏压反铁磁层上。被钉扎层的高度方向尺寸比轨道宽度方向尺寸长，并且比所述自由层的高度方向尺寸长。

7. 发明申请

US20090034133A1 MAGNETIC FIELD DETECTING ELEMENT HAVING THIN STACK WITH A PLURALITY OF FREE LAYERS AND THICK BIAS MAGNETIC LAYER 有权
标题翻译：具有多层自由层和厚度偏磁磁层的薄层堆叠的磁场检测元件
公开(公告)号：US20090034133A1
公开(公告)日：2009-02-05
申请号：US11830122
申请日：2007-07-30
申请人： Daisuke MIYAUCHI , Takahiko MACHITA
发明人： Daisuke MIYAUCHI , Takahiko MACHITA
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B5/3932 , G11B5/398 , H01L43/12
摘要： A magnetic field detecting element comprising: a stack including an upper magnetic layer, a lower magnetic layer and a non-magnetic intermediate layer sandwiched between said upper magnetic layer and said lower magnetic layer, wherein magnetization directions of said upper magnetic layer and said lower magnetic layer change in accordance with an external magnetic field; an upper shield electrode layer and a lower shield electrode layer which are provided in a manner that they sandwich said stack therebetween in a direction of stacking of said stack, wherein said upper shield electrode layer and said lower shield electrode layer supply sense current in the direction of stacking and magnetically shield said stack; a bias magnetic layer which is provided on a surface of said stack, the surface being opposite to an air bearing surface of said stack, wherein said bias magnetic layer applies a bias magnetic field to said upper magnetic layer and to said lower magnetic layer in a direction perpendicular to the air bearing surface; and insulating films which are provided on both sides of said stack with regard to a track width direction thereof. The bias magnetic layer has a larger thickness than said stack, and said upper shield electrode layer and/or said lower shield electrode layer includes an auxiliary shield layer which fills a stepped portion, the stepped portion being formed by said stack and said bias magnetic layer.
摘要翻译：一种磁场检测元件，包括：包括上磁性层，下磁性层和夹在所述上磁性层和所述下磁性层之间的非磁性中间层的叠层，其中所述上磁层和所述下磁层的磁化方向根据外部磁场的层变化; 上屏蔽电极层和下屏蔽电极层，它们以堆叠方式将堆叠夹在其间的方式设置，其中所述上屏蔽电极层和所述下屏蔽电极层沿所述堆叠方向提供感测电流，堆叠并磁屏蔽所述堆叠; 偏置磁性层，其设置在所述堆叠的表面上，所述表面与所述堆叠的空气轴承表面相对，其中所述偏磁层将偏置磁场施加到所述上磁层和所述下磁层中方向垂直于空气轴承表面; 以及相对于其轨道宽度方向设置在所述叠层的两侧的绝缘膜。所述偏磁层的厚度大于所述叠层，所述上屏蔽电极层和/或所述下屏蔽电极层包括填充阶梯部的辅助屏蔽层，所述层叠部由所述叠层形成，所述偏磁层。

8. 发明申请

US20090034132A1 MAGNETIC FIELD DETECTING ELEMENT HAVING STACK WITH A PLURALITY OF FREE LAYERS AND SIDE SHIELD LAYERS 有权
标题翻译：磁场检测元件具有多层免费层和侧面屏蔽层
公开(公告)号：US20090034132A1
公开(公告)日：2009-02-05
申请号：US11830114
申请日：2007-07-30
申请人： Daisuke MIYAUCHI , Takahiko MACHITA
发明人： Daisuke MIYAUCHI , Takahiko MACHITA
IPC分类号： G11B5/33
CPC分类号： G11B5/3903 , B82Y25/00 , G01R33/093 , G11B5/3912 , H01L43/08
摘要： A magnetic field detecting element comprising: a stack including an upper magnetic layer, a lower magnetic layer and a non-magnetic intermediate layer sandwiched between said upper magnetic layer and said lower magnetic layer, wherein magnetization directions of said upper magnetic layer and said lower magnetic layer change in accordance with an external magnetic field; an upper shield electrode layer and a lower shield electrode layer which are provided in a manner that they sandwich said stack therebetween in a direction of stacking of said stack, wherein said upper shield electrode layer and said lower shield electrode layer supply sense current in the direction of stacking and magnetically shield said stack; a bias magnetic layer which is provided on a surface of said stack, the surface being opposite to an air bearing surface of said stack, wherein said bias magnetic layer applies a bias magnetic field to said upper magnetic layer and to said lower magnetic layer in a direction perpendicular to the air bearing surface; and a pair of side shield layers which are provided on both sides of said stack with regard to a track width direction.
摘要翻译：一种磁场检测元件，包括：包括上磁性层，下磁性层和夹在所述上磁性层和所述下磁性层之间的非磁性中间层的叠层，其中所述上磁层和所述下磁层的磁化方向根据外部磁场的层变化; 上屏蔽电极层和下屏蔽电极层，它们以堆叠方式将堆叠夹在其间的方式设置，其中所述上屏蔽电极层和所述下屏蔽电极层沿所述堆叠方向提供感测电流，堆叠并磁屏蔽所述堆叠; 偏置磁性层，其设置在所述堆叠的表面上，所述表面与所述堆叠的空气轴承表面相对，其中所述偏磁层将偏置磁场施加到所述上磁层和所述下磁层中方向垂直于空气轴承表面; 以及一对侧屏蔽层，其相对于轨道宽度方向设置在所述叠层的两侧。

9. 发明申请

US20110317313A1 MAGNETORESISTIVE ELEMENT AND THIN FILM MAGNETIC HEAD 有权
标题翻译：磁电元件和薄膜磁头
公开(公告)号：US20110317313A1
公开(公告)日：2011-12-29
申请号：US12824725
申请日：2010-06-28
申请人： Daisuke MIYAUCHI , Keita KAWAMORI , Takahiko MACHITA , Tetsuya ROPPONGI
发明人： Daisuke MIYAUCHI , Keita KAWAMORI , Takahiko MACHITA , Tetsuya ROPPONGI
IPC分类号： G11B5/127 , G11B5/48
CPC分类号： G11B5/3912 , B82Y10/00 , B82Y25/00 , G11B5/3932 , G11B2005/3996
摘要： An orthogonalizing bias function part formed at a rear part of an MR part in a DFL structure influencing a substantial orthogonalizing function of first and second ferromagnetic layers in respective magnetization directions thereof, non-magnetic metal layers formed to abut both ends of the MR part in a width direction and separated from both ends of the MR part by respective insulation layers, each of the non-magnetic metal layers being in a two-layer structure configured with a first non-magnetic metal layer positioned at a lower side as a lower layer and a second non-metal layer positioned at an upper side as an upper layer are configured, and relationship R2
摘要翻译：在DFL结构中的MR部分的后部形成有影响第一和第二铁磁层在其各自的磁化方向上的基本正交功能的正交偏置功能部件，形成为邻接MR部件的两端的非磁性金属层宽度方向并且通过相应的绝缘层从MR部分的两端分离开，每个非磁性金属层是由位于下侧的第一非磁性金属层构成的两层结构，作为下层并且配置位于上侧的第二非金属层作为上层，并且满足关系R2

10. 发明申请

US20110232079A1 METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT HAVING A PAIR OF FREE LAYERS 有权
标题翻译：制造具有免费层的磁性元件的方法
公开(公告)号：US20110232079A1
公开(公告)日：2011-09-29
申请号：US12732795
申请日：2010-03-26
申请人： Daisuke MIYAUCHI , Takahiko MACHITA , Keita KAWAMORI
发明人： Daisuke MIYAUCHI , Takahiko MACHITA , Keita KAWAMORI
IPC分类号： G11B5/127
CPC分类号： G11B5/3945 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3912 , G11B5/398 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F41/308 , H01L43/12 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： An MR element includes a first exchange coupling shield layer, an MR stack, and a second exchange coupling shield layer that are arranged in this order from the bottom, and a nonmagnetic layer surrounding the MR stack. The MR stack includes a first free layer, a spacer layer, a second free layer, and a magnetic cap layer that are arranged in this order from the bottom. The magnetization direction of the first free layer is controlled by the first exchange coupling shield layer. The second free layer is magnetically coupled to the second exchange coupling shield layer via the magnetic cap layer for magnetization direction control. In the step of forming the MR stack and the nonmagnetic layer, a protection layer is formed on a layered film that will be the MR stack later, and a mask is then formed on the protection layer. Next, the layered film and the protection layer are etched using the mask and then the nonmagnetic layer is formed. After removal of the mask, the protection layer is removed by wet etching.
摘要翻译： MR元件包括从底部依次排列的第一交换耦合屏蔽层，MR堆叠和第二交换耦合屏蔽层以及围绕MR堆叠的非磁性层。 MR堆叠包括从底部依次排列的第一自由层，间隔层，第二自由层和磁性盖层。第一自由层的磁化方向由第一交换耦合屏蔽层控制。第二自由层通过用于磁化方向控制的磁帽层磁耦合到第二交换耦合屏蔽层。在形成MR堆叠和非磁性层的步骤中，在稍后将成为MR堆叠的分层膜上形成保护层，然后在保护层上形成掩模。接下来，使用掩模蚀刻层状膜和保护层，然后形成非磁性层。去除掩模后，通过湿蚀刻除去保护层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式