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1. 发明授权

US5674576A Liquid crystalline optical device operable at a low drive voltage 失效
标题翻译：液晶光学器件可在低驱动电压下工作
公开(公告)号：US5674576A
公开(公告)日：1997-10-07
申请号：US526778
申请日：1995-09-12
申请人： Tomohisa Gotoh , Taisaku Nakata , Hideya Murai , Etsuo Hasegawa
发明人： Tomohisa Gotoh , Taisaku Nakata , Hideya Murai , Etsuo Hasegawa
IPC分类号： C09K19/54 , G02F1/137
CPC分类号： C09K19/3477 , C09K19/32 , C09K19/542 , G02F1/13718 , C09K19/3405 , C09K2019/0448 , C09K2019/3408 , C09K2019/3422 , G02F2001/13775 , Y10T428/1005 , Y10T428/24917
摘要： In a liquid crystalline optical device, a light modulating layer composed of a liquid crystal and a high polymer resin is sandwiched between two substrates having electrode layers, at least one of the substrates being transparent. The polymer is a compound which is obtained by photopolymerization of a prepolymer containing a (meth)acryloyl compound having a stilbene skeleton, or a (meth)acryloyl compound including dioxane group or dioxolane group. The liquid crystalline optical device can be driven with a lower applied voltage and exhibits a reduced hysteresis.
摘要翻译：在液晶光学器件中，将由液晶和高分子树脂组成的光调制层夹在具有电极层的两个基板之间，至少一个基板是透明的。聚合物是通过含有具有二苯乙烯骨架的（甲基）丙烯酰基化合物的预聚物或包含二烷基或二氧戊环的（甲基）丙烯酰基化合物的光聚合而获得的化合物。液晶光学器件可以以较低的施加电压驱动并且具有减小的滞后。

2. 发明授权

US09372034B2 Cool-storage type heat exchanger 有权
标题翻译：冷藏型热交换器
公开(公告)号：US09372034B2
公开(公告)日：2016-06-21
申请号：US12584843
申请日：2009-09-11
申请人： Naoki Yokoyama , Yoshio Miyata , Etsuo Hasegawa , Masahiro Shimoya , Jun Abei , Ryoichi Sanada , Takashi Andoh , Seiji Inoue , Katsutoshi Enomoto
发明人： Naoki Yokoyama , Yoshio Miyata , Etsuo Hasegawa , Masahiro Shimoya , Jun Abei , Ryoichi Sanada , Takashi Andoh , Seiji Inoue , Katsutoshi Enomoto
IPC分类号： F28D17/00 , F28D20/00 , F28D1/053 , F28D20/02 , B60H1/00 , F28D21/00
CPC分类号： F28D20/00 , B60H1/005 , F28D1/05383 , F28D20/02 , F28D2020/0013 , F28D2021/0071 , F28F2275/04 , Y02E60/142 , Y02E60/145
摘要： An object of the invention is to provide an effective cooling-energy storing performance and a stable cooling-energy radiating performance and to realize a high productivity. An evaporator has a plurality of refrigerant tubes arranged at almost equal intervals to form therebetween accommodating spaces. A plurality of cooling-storage containers are arranged in some of the accommodating spaces and fins are arranged in the remaining accommodating spaces. A cooling-storage unit is formed by one cooling-storage container and two refrigerant tubes arranged at both sides of the cooling-storage container. Each of the cooling-storage container has projections extending from one wall portion to the other wall portion to form heat exchange portions. The cooling-storage container is connected to the refrigerant tubes by soldering material.
摘要翻译：本发明的目的是提供有效的冷却能量储存性能和稳定的冷却能量辐射性能并实现高生产率。蒸发器具有以几乎等间隔布置的多个制冷剂管，以在其间形成容纳空间。在一些容纳空间中布置有多个冷却储存容器，并且翅片布置在剩余的容纳空间中。冷却存储单元由一个冷却储存容器和布置在冷却储存容器的两侧的两个制冷剂管形成。每个冷却储存容器具有从一个壁部分延伸到另一个壁部分的突起，以形成热交换部分。冷却储存容器通过焊接材料连接到制冷剂管。

3. 发明授权

US07849915B2 Heat exchange tube having multiple fluid paths 有权
标题翻译：具有多个流体路径的换热管
公开(公告)号：US07849915B2
公开(公告)日：2010-12-14
申请号：US10850596
申请日：2004-05-19
申请人： Masaaki Kawakubo , Etsuo Hasegawa , Yoshiki Katoh , Ken Muto
发明人： Masaaki Kawakubo , Etsuo Hasegawa , Yoshiki Katoh , Ken Muto
IPC分类号： F28F1/00
CPC分类号： F28F1/022 , F28D2021/0073 , Y10T29/4935
摘要： A heat exchange tube having a flat shape includes a plurality of fluid paths having a circular cross section and extending in a longitudinal direction of the tube. Each fluid path is parallel to each other fluid path. The tube is dimensioned such that a distance between two adjacent fluid paths is defined as Wt, and a circumferential thickness between a surface of the tube and an outermost fluid path is defined as Ht. The distance Wt and the circumferential thickness Ht have a relationship as 0.42≦Ht/Wt≦0.98.
摘要翻译：具有平坦形状的热交换管包括具有圆形横截面并在管的纵向方向上延伸的多个流体路径。每个流体路径平行于彼此的流体路径。该管的尺寸使得两个相邻流体路径之间的距离被定义为Wt，并且管的表面和最外侧流体路径之间的圆周厚度被定义为Ht。距离Wt和圆周厚度Ht的关系为0.42＆nlE; Ht / Wt＆nlE; 0.98。

4. 发明申请

US20070107887A1 Internal heat exchanger 有权
标题翻译：内部热交换器
公开(公告)号：US20070107887A1
公开(公告)日：2007-05-17
申请号：US11649319
申请日：2007-01-03
申请人： Ken Muto , Etsuo Hasegawa , Masaaki Kawakubo , Yoshiki Katoh
发明人： Ken Muto , Etsuo Hasegawa , Masaaki Kawakubo , Yoshiki Katoh
IPC分类号： F28D7/02
CPC分类号： F25B40/00 , F25B9/008 , F25B2309/061 , F28D7/0008 , F28F7/02
摘要： In an internal heat exchanger, when a corresponding diameter of a high pressure passage 5a is Ψh, a passage length Lh of the high pressure passage (5a) is so set as to satisfy the relation 9.16/{LN(4.5−Ψh+1.03)}
摘要翻译：在内部热交换器中，当高压通道5a的相应直径为Psih时，高压通道（5a）的通道长度Lh被设定为满足关系9.16 / {LN（4.5 < -Psih1.03）} > = Ah> = 100×（500xPsih <1.2）-1（0.04xPsih + 1.7），通道截面积AI 低压通路5c被设定为满足关系1.65 / PsiI <0.67 。

5. 发明申请

US20060151159A1 Heat exchanger 有权
公开(公告)号：US20060151159A1
公开(公告)日：2006-07-13
申请号：US11348435
申请日：2006-02-06
申请人： Masaaki Kawakubo , Norihide Kawachi , Ken Muto , Ken Yamamoto , Etsuo Hasegawa , Yoshiki Katoh
发明人： Masaaki Kawakubo , Norihide Kawachi , Ken Muto , Ken Yamamoto , Etsuo Hasegawa , Yoshiki Katoh
IPC分类号： F28F9/02
CPC分类号： F28D1/05375 , F25B9/008 , F28D2021/0071 , F28D2021/0073 , F28F9/0224 , F28F9/0278 , F28F9/182 , F28F9/185 , F28F2225/08
摘要： There is provides a heat exchanger comprising: a plurality of tubes (110) stacked on each other; and a pair of header tanks (140), each header tank (140) having a flow section (151) in which fluid flows, extending in a direction of stack of the tubes (110), wherein both end sections (111) of the tubes (110) in the longitudinal direction are joined to the pair of header tanks (140), the flow section (151) of each header tank (140) and the inside of each tube (110) are communicated with each other, a tip position (a) of the tube end section (111) is arranged in an outside region of the flow section (151), and an inner wall width size (b) of the flow section (151) is smaller than a size (c) in the width direction of the header tank (140) at the tube end section (111).

6. 发明授权

US07044208B2 Heat exchanger 有权
标题翻译：热交换器
公开(公告)号：US07044208B2
公开(公告)日：2006-05-16
申请号：US10361657
申请日：2003-02-10
申请人： Masaaki Kawakubo , Norihide Kawachi , Ken Muto , Ken Yamamoto , Etsuo Hasegawa , Yoshiki Katoh
发明人： Masaaki Kawakubo , Norihide Kawachi , Ken Muto , Ken Yamamoto , Etsuo Hasegawa , Yoshiki Katoh
IPC分类号： F28F9/02
CPC分类号： F28D1/05375 , F25B9/008 , F28D2021/0071 , F28D2021/0073 , F28F9/0224 , F28F9/0278 , F28F9/182 , F28F9/185 , F28F2225/08
摘要： There is provides a heat exchanger comprising: a plurality of tubes (110) stacked on each other; and a pair of header tanks (140), each header tank (140) having a flow section (151) in which fluid flows, extending in a direction of stack of the tubes (110), wherein both end sections (111) of the tubes (110) in the longitudinal direction are joined to the pair of header tanks (140), the flow section (151) of each header tank (140) and the inside of each tube (110) are communicated with each other, a tip position (a) of the tube end section (111) is arranged in an outside region of the flow section (151), and an inner wall width size (b) of the flow section (151) is smaller than a size (c) in the width direction of the header tank (140) at the tube end section (111).
摘要翻译：提供了一种热交换器，包括：彼此堆叠的多个管（110）; 和一对集水箱（140），每个集管箱（140）具有流体流动的流动部分（151），所述流动部分沿着管（110）的堆叠方向延伸，其中，纵向上的管（110）连接到一对集水箱（140），每个集水箱（140）的流动部分（151）和每个管（110）的内部彼此连通，管端部（111）的位置（a）配置在流路部（151）的外侧区域，流路部（151）的内壁宽度尺寸（b）小于（c）在管端部（111）处的集水箱（140）的宽度方向上。

7. 发明授权

US06924079B2 Resist resin, chemical amplification type resist, and method of forming of pattern with the same 失效
标题翻译：抗蚀树脂，化学放大型抗蚀剂，以及与其形成图案的方法
公开(公告)号：US06924079B2
公开(公告)日：2005-08-02
申请号：US10240404
申请日：2001-07-02
申请人： Katsumi Maeda , Shigeyuki Iwasa , Kaichiro Nakano , Etsuo Hasegawa
发明人： Katsumi Maeda , Shigeyuki Iwasa , Kaichiro Nakano , Etsuo Hasegawa
IPC分类号： C08F34/02 , C08F220/10 , C08F222/06 , C08G61/06 , C08G61/08 , C08G61/12 , G03F7/039 , H01L21/027 , H01L21/312
CPC分类号： G03F7/0392 , C08G61/06 , C08G61/08 , C08G61/12 , C08G61/125 , G03F7/0395 , G03F7/0397 , H01L21/312 , Y10S430/106 , Y10S430/111
摘要： The present invention relates to a resist resin having an acid-decomposable group, which gives rise to decomposition of the acid-decomposable group to show an increased solubility to an aqueous alkali solution by the action of an acid, wherein the resist resin has, in the main chain, an alicyclic lactone structure represented by the following general formula (1). According to the present invention, a positive-type chemically amplified resist can be obtained which has high transparency to a far-ultraviolet light having a wavelength of about 220 nm or less, excellent etching resistance, and excellent adhesion to substrate; and a fine pattern required in production of semiconductor device can be formed. (wherein Z is an alicyclic hydrocarbon group having a lactone structure).
摘要翻译：本发明涉及具有酸分解性基团的抗蚀剂树脂，该抗蚀剂树脂引起酸分解基团的分解，以通过酸的作用使碱溶液的溶解度增加，其中抗蚀剂树脂具有主链，由以下通式（1）表示的脂环族内酯结构。根据本发明，可以获得对具有约220nm或更小的波长的远紫外光具有高透明度，优异的耐蚀刻性和对基底的优异粘附性的正型化学放大抗蚀剂; 并且可以形成半导体器件的制造所需的精细图案。（其中Z为具有内酯结构的脂环族烃基）。

8. 发明授权

US5994025A Photoresist, compounds for composing the photoresist, and method of forming pattern by using the photoresist 失效
标题翻译：光致抗蚀剂，用于构成光致抗蚀剂的化合物，以及通过使用光致抗蚀剂形成图案的方法
公开(公告)号：US5994025A
公开(公告)日：1999-11-30
申请号：US763054
申请日：1996-12-10
申请人： Shigeyuki Iwasa , Kaichiro Nakano , Katsumi Maeda , Takeshi Ohfuji , Etsuo Hasegawa
发明人： Shigeyuki Iwasa , Kaichiro Nakano , Katsumi Maeda , Takeshi Ohfuji , Etsuo Hasegawa
IPC分类号： C08F220/04 , C08F220/06 , C08F220/10 , C08F220/18 , C08F220/26 , C08F220/28 , C09D133/04 , C09D133/14 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/11 , Y10S430/111
摘要： There is provided a photoresist including (a) a resin composed of a polymer represented with the following general formula [1], and (b) a photo acid generator which produces acid when exposed to a light: ##STR1## wherein each of R.sup.1, R.sup.3 and R.sup.7 represents one of a hydrogen atom and a methyl group, R.sup.2 represents a hydrocarbon group including a bridged cyclic hydrocarbon group and having a carbon number in the range of 7 to 13 both inclusive, R.sup.4 represents one of a hydrogen atom and a hydrocarbon group having a carbon number of 1 or 2, R.sup.5 represents a hydrocarbon group having a carbon number of 1 or 2, R.sup.6 represents one of (a) a hydrocarbon group having a carbon number in the range of 1 to 12 both inclusive, (b) a hydrocarbon group having a carbon number in the range of 1 to 12 both inclusive and replaced with an alkoxy group having a carbon number in the range of 1 to 12 both inclusive, and (c) a hydrocarbon group having a carbon number in the range of 1 to 12 both inclusive and replaced with an acyl group having a carbon number in the range of 1 to 13 both inclusive, x+y+z=1, x is in the range of 0.1 to 0.9, y is in the range of 0.1 to 0.7, and z is in the range of 0 to 0.7. The resin has a weight percent in the range of 75 to 99.8 both inclusive, and the photo acid generator has a weight percent in the range of 0.2 to 25 both inclusive. The above mentioned photoresist produces no extra polymer by side reaction. Thus, the photoresist has high resolution to thereby make it possible to form a fine pattern without resist residue.
摘要翻译：提供了包含（a）由以下通式[1]表示的聚合物构成的树脂的光致抗蚀剂，（b）暴露于光时产生酸的光酸产生剂：其中R1，R3和R7 表示氢原子和甲基中的一个，R 2表示包含桥连环烃基并且碳数为7〜13的碳原子的烃基，R4表示氢原子和具有碳原子数1或2，R 5表示碳数为1或2的烃基，R 6表示（a）碳原子数为1〜12的烃基，（b）烃碳数为1〜12的碳原子数为2〜12的碳原子数为2〜12的烷氧基，（c）碳数为1以上的烃基到12，并用a替代碳原子数为1〜13的碳原子，x + y + z = 1，x在0.1〜0.9的范围内，y在0.1〜0.7的范围内，z在范围为0〜0.7。树脂的重量百分比在75〜99.8之间，光酸产生剂的重量百分比在0.2〜25的范围内。上述光致抗蚀剂通过副反应不产生额外的聚合物。因此，光致抗蚀剂具有高分辨率，从而可以形成没有抗蚀剂残留物的精细图案。

9. 发明授权

US5691111A Photosensitive resin composition useful as resist for deep UV lithography containing sulfonium salts 失效
标题翻译：适用于含有锍盐的深UV光刻抗蚀剂的光敏树脂组合物
公开(公告)号：US5691111A
公开(公告)日：1997-11-25
申请号：US502251
申请日：1995-07-13
申请人： Shigeyuki Iwasa , Kaichiro Nakano , Etsuo Hasegawa
发明人： Shigeyuki Iwasa , Kaichiro Nakano , Etsuo Hasegawa
IPC分类号： C07C381/12 , C08L101/00 , C08L101/12 , C09K9/02 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/122
摘要： The invention provides a photosensitive resin composition useful as a photoresist of chemical amplification type for deep UV lithography such as ArF excimer laser lithography. The resin composition contains, as an acid generator, an alkylsulfonium salt of the general formula (I), wherein R.sup.1 is a C.sub.7 to C.sub.12 alkyl having a bridged alicyclic structure or a C.sub.5 to C.sub.7 monocyclic alkyl, R.sup.2 is an alkyl, R.sup.3 is a C.sub.5 to C.sub.7 .beta.-oxomonocyclic alkyl or a C.sub.7 to C.sub.10 bridged cyclic alkyl having oxo group at the .beta.-position. The general formula (I) is inclusive of novel alkylsulfonium salts in which R.sup.1 is norbornyl group, adamantyl group or cyclohexyl group, R.sup.2 is methyl group and R.sup.3 is .beta.-oxocyclohexyl group or .beta.-oxonorbornane-2-yl group. ##STR1##
摘要翻译：本发明提供了一种光敏树脂组合物，其用作用于深UV光刻（例如ArF准分子激光光刻）的化学放大型光致抗蚀剂。树脂组合物含有作为酸产生剂的通式（I）的烷基锍盐，其中R 1是具有桥连脂环结构的C 7〜C 12烷基或C 5〜C 7单环烷基，R 2为烷基，R 3为 C5至C7β-氧代环烷基或在β-位具有氧代基的C7至C10桥连环烷基。通式（I）包括其中R1是降冰片基，金刚烷基或环己基，R2是甲基，R3是β-氧代环己基或β-氧代降冰片烷-2-基的新的烷基锍盐。（一）

10. 发明授权

US5665518A Photoresist and monomer and polymer for composing the photoresist 失效
标题翻译：用于构成光致抗蚀剂的光致抗蚀剂和单体和聚合物
公开(公告)号：US5665518A
公开(公告)日：1997-09-09
申请号：US588607
申请日：1996-01-19
申请人： Katsumi Maeda , Kaichiro Nakano , Takeshi Ohfuji , Etsuo Hasegawa
发明人： Katsumi Maeda , Kaichiro Nakano , Takeshi Ohfuji , Etsuo Hasegawa
IPC分类号： C07C61/35 , C07C69/00 , C07C69/753 , C07C69/757 , C07D307/20 , C07D309/10 , C07D309/12 , C08F20/26 , C08F20/28 , C08K5/00 , C08L33/04 , C08L33/14 , G03F7/004 , G03F7/039 , H01L21/027 , C07C69/54
CPC分类号： C07C69/00 , C07C69/753 , C07D307/20 , C07D309/10 , C08F20/28 , G03F7/0045 , G03F7/039 , C07C2103/00
摘要： The present invention provides a vinylmonomer represented with the following general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a dihydric, bridged cyclic hydrocarbon group having a carbon number in the range of 7 to 13 both inclusive, R.sup.3 represents a group to be decomposed by acid or a hydrogen atom, X represents an alkylene group or a coupling group composed of an oxygen-carbon bond, and Y represents an alkylene group or a coupling group composed of a carbon-carbon bond. A photoresist obtained by polymerizing a monomer in accordance with the invention has a high transparency to FUV having a wavelength of at greatest 220 nm, high sensitivity and resolution to FUV, and a high dry etching resistance, and hence is suitable for exposure light such as FUV having a wavelength of at greatest 220 nm and, in particular, ArF excimer laser. The photoresist makes it possible to carry out fine patterning required for the fabrication of a semiconductor element.
摘要翻译：本发明提供由以下通式（I）表示的乙烯基单体：om或甲基，R 2表示碳原子数为7〜13的二羟基桥连环状烃基，其中R3表示被酸或氢原子分解，X表示亚烷基或由氧 - 碳键组成的偶合基团，Y表示亚烷基或由碳 - 碳键组成的偶合基团。通过使根据本发明的单体聚合而获得的光致抗蚀剂对波长为最大220nm，对FUV的高灵敏度和分辨率以及高耐干蚀刻性的FUV具有高透明度，因此适用于曝光光具有波长最大为220nm的FUV，特别是ArF准分子激光。光致抗蚀剂使得可以进行制造半导体元件所需的精细图案。

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