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1. 发明申请

US20120156578A1 PHOTOELECTROCHEMICAL CELL AND ENERGY SYSTEM USING SAME 有权
标题翻译：光电化学电池和使用相同的能量系统
公开(公告)号：US20120156578A1
公开(公告)日：2012-06-21
申请号：US13393107
申请日：2011-03-22
申请人： Noboru Taniguchi , Kenichi Tokuhiro , Takahiro Suzuki , Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Satoru Tamura
发明人： Noboru Taniguchi , Kenichi Tokuhiro , Takahiro Suzuki , Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Satoru Tamura
IPC分类号： H01M8/06 , C25B1/04 , C25B9/04
CPC分类号： C25B1/003 , B01J35/004 , C25B11/0442 , H01M8/0656 , Y02E60/366 , Y02E60/368 , Y02P20/135
摘要： A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a conductor (121) and semiconductor layers (122, 123) disposed on the conductor (121); a counter electrode (130) connected electrically to the conductor (121); an electrolyte (140) in contact with surfaces of the semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). A band edge level ECS of a conduction band, a band edge level EVS of a valence band, and a Fermi level EFS in a surface near-field region of the semiconductor layer, and a band edge level ECJ of a conduction band, a band edge level EVJ of a valence band, and a Fermi level EFJ in a junction plane near-field region of the semiconductor layer with the conductor satisfy, relative to a vacuum level, ECS-EFS>ECJ-EFJ, EFS-EVS −4.44 eV, and EVS
摘要翻译：光电化学电池（100）包括：包括导体（121）和设置在导体（121）上的半导体层（122,123）的半导体电极（120）; 与所述导体（121）电连接的对电极（130）; 与所述半导体层（123）和所述对电极（130）的表面接触的电解质（140）; 以及容纳半导体电极（120），对电极（130）和电解质（140）的容器（110）。导带的带边缘电平ECS，价带的带边缘电平EVS和半导体层的表面近场区域中的费米能级EFS，以及导带的带边缘电平ECJ，带 ECS-EFS> ECJ-EFJ，EFS-EVS -4.44eV，EVS <-5.67eV。半导体层的表面近场区域中的费米能级EFS和具有导体的半导体层的结面近场区域中的费米能级EFJ相对于真空度满足-5.67eV

2. 发明授权

US08821700B2 Photoelectrochemical cell and energy system using same 有权
标题翻译：光电化学电池和能量系统使用相同
公开(公告)号：US08821700B2
公开(公告)日：2014-09-02
申请号：US13502322
申请日：2010-11-04
申请人： Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Kenichi Tokuhiro
发明人： Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Kenichi Tokuhiro
IPC分类号： C25B1/04 , C25B5/00 , C25B9/06 , C25B1/00 , C01B3/04 , H01M8/06 , H01M14/00
CPC分类号： C25B1/003 , C01B3/042 , H01M8/0606 , H01M14/005 , Y02E60/364 , Y02E60/366 , Y02E60/50 , Y02P20/135
摘要： A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a conductor (121), a first n-type semiconductor layer (122) having a nanotube array structure, and a second n-type semiconductor layer (123); a counter electrode (130) connected to the conductor (121); an electrolyte (140) in contact with the second n-type semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). Relative to a vacuum level, (I) band edge levels of a conduction band and a valence band in the second n-type semiconductor layer (123), respectively, are higher than band edge levels of a conduction band and a valence band in the first n-type semiconductor layer (122), (II) a Fermi level of the first n-type semiconductor layer (122) is higher than a Fermi level of the second n-type semiconductor layer (123), and (III) a Fermi level of the conductor (121) is higher than the Fermi level of the first n-type semiconductor layer (122).
摘要翻译：光电化学电池（100）包括：包括导体（121），具有纳米管阵列结构的第一n型半导体层（122）和第二n型半导体层（123）的半导体电极（120）连接到导体（121）的对电极（130）; 与第二n型半导体层（123）和对电极（130）接触的电解液（140）; 以及容纳半导体电极（120），对电极（130）和电解质（140）的容器（110）。相对于真空度，第二n型半导体层（123）中的导带和价带的带边缘电平分别高于导带和带隙的带边缘电平，第一n型半导体层（122），（II）第一n型半导体层（122）的费米能级高于第二n型半导体层（123）的费米能级，（III）导体（121）的费米能级高于第一n型半导体层（122）的费米能级。

3. 发明授权

US09157155B2 Photoelectrochemical cell and energy system using same 有权
标题翻译：光电化学电池和能量系统使用相同
公开(公告)号：US09157155B2
公开(公告)日：2015-10-13
申请号：US13393107
申请日：2011-03-22
申请人： Noboru Taniguchi , Kenichi Tokuhiro , Takahiro Suzuki , Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Satoru Tamura
发明人： Noboru Taniguchi , Kenichi Tokuhiro , Takahiro Suzuki , Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Satoru Tamura
IPC分类号： C25B1/06 , B01J35/02 , C25B1/00 , C25B11/04 , B01J35/00 , H01M8/06
CPC分类号： C25B1/003 , B01J35/004 , C25B11/0442 , H01M8/0656 , Y02E60/366 , Y02E60/368 , Y02P20/135
摘要： A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a conductor (121) and semiconductor layers (122, 123) disposed on the conductor (121); a counter electrode (130) connected electrically to the conductor (121); an electrolyte (140) in contact with surfaces of the semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). A band edge level ECS of a conduction band, a band edge level EVS of a valence band, and a Fermi level EFS in a surface near-field region of the semiconductor layer, and a band edge level ECJ of a conduction band, a band edge level EVJ of a valence band, and a Fermi level EFJ in a junction plane near-field region of the semiconductor layer with the conductor satisfy, relative to a vacuum level, ECS−EFS>ECJ−EFJ, EFS−EVS −4.44 eV, and EVS
摘要翻译：光电化学电池（100）包括：包括导体（121）和设置在导体（121）上的半导体层（122,123）的半导体电极（120）; 与所述导体（121）电连接的对电极（130）; 与所述半导体层（123）和所述对电极（130）的表面接触的电解质（140）; 以及容纳半导体电极（120），对电极（130）和电解质（140）的容器（110）。导带的带边缘电平ECS，价带的带边缘电平EVS和半导体层的表面近场区域中的费米能级EFS，以及导带的带边缘电平ECJ，带 ECS-EFS> ECJ-EFJ，EFS-EVS -4.44eV，EVS <-5.67eV。半导体层的表面近场区域中的费米能级EFS和具有导体的半导体层的结面近场区域中的费米能级EFJ相对于真空度满足-5.67eV

4. 发明申请

US20120276464A1 Photoelectrochemical Cell and Energy System Using Same 有权
标题翻译：光电化学电池和能量系统使用相同
公开(公告)号：US20120276464A1
公开(公告)日：2012-11-01
申请号：US13502322
申请日：2010-11-04
申请人： Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Kenichi Tokuhiro
发明人： Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Kenichi Tokuhiro
IPC分类号： C25B11/04 , C25B1/02 , H01M8/06 , C25B9/00 , B82Y99/00
CPC分类号： C25B1/003 , C01B3/042 , H01M8/0606 , H01M14/005 , Y02E60/364 , Y02E60/366 , Y02E60/50 , Y02P20/135
摘要： A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a conductor (121), a first n-type semiconductor layer (122) having a nanotube array structure, and a second n-type semiconductor layer (123); a counter electrode (130) connected to the conductor (121); an electrolyte (140) in contact with the second n-type semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). Relative to a vacuum level, (I) band edge levels of a conduction band and a valence band in the second n-type semiconductor layer (123), respectively, are higher than band edge levels of a conduction band and a valence band in the first n-type semiconductor layer (122), (II) a Fermi level of the first n-type semiconductor layer (122) is higher than a Fermi level of the second n-type semiconductor layer (123), and (III) a Fermi level of the conductor (121) is higher than the Fermi level of the first n-type semiconductor layer (122).
摘要翻译：光电化学电池（100）包括：包括导体（121），具有纳米管阵列结构的第一n型半导体层（122）和第二n型半导体层（123）的半导体电极（120）连接到导体（121）的对电极（130）; 与第二n型半导体层（123）和对电极（130）接触的电解液（140）; 以及容纳半导体电极（120），对电极（130）和电解质（140）的容器（110）。相对于真空度，第二n型半导体层（123）中的导带和价带的带边缘电平分别高于导带和带隙的带边缘电平，第一n型半导体层（122），（II）第一n型半导体层（122）的费米能级高于第二n型半导体层（123）的费米能级，（III）导体（121）的费米能级高于第一n型半导体层（122）的费米能级。

5. 发明申请

US20110203661A1 OPTICALLY PUMPED SEMICONDUCTOR AND DEVICE USING THE SAME 有权
标题翻译：光学泵浦半导体和使用它的器件
公开(公告)号：US20110203661A1
公开(公告)日：2011-08-25
申请号：US13119117
申请日：2010-04-26
申请人： Noboru Taniguchi , Kenichi Tokuhiro , Takahiro Suzuki , Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hatoh
发明人： Noboru Taniguchi , Kenichi Tokuhiro , Takahiro Suzuki , Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hatoh
IPC分类号： H01L31/0328
CPC分类号： B01J35/004 , B01J23/002 , B01J23/08 , B01J23/10 , B01J23/62 , B01J2523/00 , C01B3/042 , C01B13/0207 , C01G25/006 , C01P2002/52 , C01P2002/54 , C01P2002/72 , C01P2002/77 , C01P2002/84 , C01P2004/34 , C01P2006/40 , C25B1/003 , Y02E60/364 , B01J2523/25 , B01J2523/32 , B01J2523/48 , B01J2523/375 , B01J2523/33
摘要： The optically pumped semiconductor according to the present invention is an optically pumped semiconductor that is a semiconductor of a perovskite oxide. The optically pumped semiconductor has a composition represented by a general formula: BaZr1-xMxO3-α, where M denotes at least one element selected from trivalent elements, x denotes a numerical value more than 0 but less than 0.8, and α denotes an amount of oxygen deficiency that is a numerical value more than 0 but less than 1.5. The optically pumped semiconductor has a crystal system of a cubic, tetragonal, or orthorhombic crystal. When lattice constants of the crystal system are referred to as a, b, and c, provided that a≦b≦c, conditions that 0.41727 nm≦a, b, c≦0.42716 nm and a/c≧0.98 are satisfied.
摘要翻译：根据本发明的光泵浦半导体是作为钙钛矿氧化物的半导体的光泵浦半导体。光泵浦半导体具有由通式BaZr1-xMxO3-α表示的组成，其中M表示选自三价元素中的至少一种元素，x表示大于0但小于0.8的数值，α表示氧缺乏是数值超过0但小于1.5的缺氧。光泵浦半导体具有立方晶，四方晶或正交晶体的晶体系。如果晶体系的晶格常数被称为a，b和c，条件是满足0.41727nm＆nlE; a，b，c＆nlE; 0.42716nm和a /c≥0.98的条件。

6. 发明授权

US08663435B2 Optical semiconductor and method for producing the same, optical semiconductor device, photocatalyst, hydrogen producing device, and energy system 有权
标题翻译：光半导体及其制造方法，光半导体装置，光催化剂，制氢装置，能源系统等
公开(公告)号：US08663435B2
公开(公告)日：2014-03-04
申请号：US13482301
申请日：2012-05-29
申请人： Takahiro Suzuki , Takaiki Nomura , Satoru Tamura , Kazuhito Hato , Noboru Taniguchi , Kenichi Tokuhiro , Nobuhiro Miyata
发明人： Takahiro Suzuki , Takaiki Nomura , Satoru Tamura , Kazuhito Hato , Noboru Taniguchi , Kenichi Tokuhiro , Nobuhiro Miyata
IPC分类号： C25B9/00
CPC分类号： C01G33/00 , C01B3/042 , C01B21/0821 , C01B2203/066 , C01P2002/72 , C01P2002/84 , H01M8/0656 , Y02E60/364 , Y02P20/128 , Y02P70/56
摘要： The method for producing the optical semiconductor of the present disclosure includes a mixing step of producing a mixture containing a reduction inhibitor and a niobium compound that contains at least oxygen in its composition; a nitriding step of nitriding the mixture by the reaction between the mixture and a nitrogen compound gas; and a washing step of isolating niobium oxynitride from the material obtained through the nitriding step by dissolving chemical species other than niobium oxynitride with a washing liquid. The optical semiconductor of the present disclosure substantially consists of niobium oxynitride having a crystal structure of baddeleyite and having a composition represented by the composition formula, NbON.
摘要翻译：本公开的光半导体的制造方法包括：混合工序，其制造含有还原抑制剂和至少含有氧的组合物的铌化合物的混合物; 通过混合物和氮化合物气体之间的反应氮化该混合物的氮化步骤; 以及从通过氮化步骤获得的材料通过用洗涤液溶解除了氮氧化铌之外的化学物质来分离氮氧化铌的洗涤步骤。本公开的光半导体基本上由具有菱铁矿晶体结构的NbO的NbO的组成式表示的组成的氮氧化铌组成。

7. 发明申请

US20130075250A1 HYDROGEN PRODUCTION DEVICE 有权
标题翻译：氢生产设备
公开(公告)号：US20130075250A1
公开(公告)日：2013-03-28
申请号：US13702443
申请日：2011-08-26
申请人： Kenichi Tokuhiro , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Satoru Tamura
发明人： Kenichi Tokuhiro , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Satoru Tamura
IPC分类号： C25B11/04
CPC分类号： C25B11/0442 , B01J35/004 , C01B3/042 , C25B1/003 , C25B9/08 , C25B11/03 , Y02E60/364 , Y02E60/368
摘要： The hydrogen production device of the present invention includes: a first electrode (120) including a conductive substrate (101) and a photocatalytic semiconductor layer (102); a second electrode (103) that is electrically connected to the first electrode (120) and disposed in a second region (123) opposite to a first region (122) relative to the first electrode (120), when the first region (122) is defined as a region on a side of a surface of the first electrode (120) in which the photocatalytic semiconductor layer (102) is provided; a water-containing electrolyte solution (106); and a housing (105) containing these. The first electrode (120) is provided with a through-hole (131) at a position and the second electrode (103) is provided with a through-hole (132) at a position corresponding to the position, and the through-holes form a communicating hole (130) for allowing the first region (122) and the second region (123) to communicate with each other. An ion exchange membrane (104) having substantially the same shape as the communicating hole (130) is disposed in the communicating hole (130) to close the communicating hole (130).
摘要翻译：本发明的制氢装置包括：包括导电基板（101）和光催化半导体层（102）的第一电极（120）; 当第一区域（122）与第一电极（120）电连接并且相对于第一电极（120）设置在与第一区域相对的第二区域（123）中时，第二电极（103）被定义为在其中设置有光催化半导体层（102）的第一电极（120）的表面的一侧的区域; 含水电解质溶液（106）; 和包含它们的壳体（105）。第一电极（120）在一个位置处设置有通孔（131），并且第二电极（103）在与该位置相对应的位置处设置有通孔（132），并且通孔形式用于允许第一区域（122）和第二区域（123）彼此连通的连通孔（130）。具有与连通孔（130）大致相同形状的离子交换膜（104）设置在连通孔（130）中以闭合连通孔（130）。

8. 发明申请

US20120080310A1 PHOTOELECTROCHEMICAL CELL 审中-公开
标题翻译：光电化学电池
公开(公告)号：US20120080310A1
公开(公告)日：2012-04-05
申请号：US13375086
申请日：2010-06-01
申请人： Takaiki Nomura , Takahiro Suzuki , Kenichi Tokuhiro , Tomohiro Kuroha , Noboru Taniguchi , Kazuhito Hatoh , Shuzo Tokumitsu
发明人： Takaiki Nomura , Takahiro Suzuki , Kenichi Tokuhiro , Tomohiro Kuroha , Noboru Taniguchi , Kazuhito Hatoh , Shuzo Tokumitsu
IPC分类号： C25B9/00 , C25B1/04
CPC分类号： C01B3/042 , C25B1/003 , Y02E60/364 , Y02E60/366 , Y02P20/135
摘要： A photoelectrochemical cell (1) includes: an optical semiconductor electrode (first electrode) (3) including a conductive substrate (3a) and an n-type semiconductor layer (3b) as an optical semiconductor layer disposed on the conductive substrate (3a); a counter electrode (second electrode) (4) disposed to face the surface of the optical semiconductor electrode (3) on the conductive substrate (3a) side and connected electrically to the conductive substrate (3a); an electrolyte solution (11) containing water and disposed in contact with the surface of the n-type semiconductor layer (3b) and the surface of the counter electrode (4); a container (2) in which the optical semiconductor electrode (3), the counter electrode (4), and the electrolyte solution (11) are disposed; an inlet (5) for supplying water into the container; and an ion passing portion (12) that allows ions to move between the electrolyte solution in a region A on the surface side of the n-type semiconductor layer (3b) and the electrolyte solution in a region B on the opposite side of the region A with respect to the optical semiconductor electrode (3).
摘要翻译：光电化学电池（1）包括：设置在导电基板（3a）上的作为光学半导体层的导电基板（3a）和n型半导体层（3b）的光学半导体电极（第一电极）（3）相对电极（第二电极）（4），与所述导电性基板（3a）侧的所述光半导体电极（3）的表面相对配置并与所述导电性基板（3a）电连接; 包含水并与n型半导体层（3b）的表面和对置电极（4）的表面接触地设置的电解液（11）; 其中设置有光学半导体电极（3），对电极（4）和电解质溶液（11）的容器（2）用于将水供应到所述容器中的入口（5）以及离子通过部分（12），其允许离子在n型半导体层（3b）的表面侧上的区域A中的电解质溶液与该区域的相对侧的区域B中的电解质溶液之间移动 A相对于光半导体电极（3）。

9. 发明授权

US08999119B2 Hydrogen production device 有权
标题翻译：氢气生产装置
公开(公告)号：US08999119B2
公开(公告)日：2015-04-07
申请号：US13702443
申请日：2011-08-26
申请人： Kenichi Tokuhiro , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Satoru Tamura
发明人： Kenichi Tokuhiro , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Satoru Tamura
IPC分类号： C25B1/04 , C25B1/02 , C25B9/00 , C25B9/06 , C25B9/08 , C25B9/10 , C25B13/00 , C25B11/02 , C25B15/00 , C25B11/04 , C01B3/04 , C25B1/00 , C25B11/03 , B01J35/00
CPC分类号： C25B11/0442 , B01J35/004 , C01B3/042 , C25B1/003 , C25B9/08 , C25B11/03 , Y02E60/364 , Y02E60/368
摘要： The hydrogen production device of the present invention includes: a first electrode including a conductive substrate and a photocatalytic semiconductor layer; a second electrode that is electrically connected to the first electrode and disposed in a second region opposite to a first region relative to the first electrode; the first region is defined as a region on a side of a surface of the first electrode in which the photocatalytic semiconductor layer is provided; a water-containing electrolyte solution; and a housing containing these. The first electrode is provided with first through-holes and the second electrode is provided with second through-holes; and the first through-holes and second through-holes form a communicating hole for allowing the first region and the second region to communicate with each other. An ion exchange membrane having substantially the same shape as the communicating hole is disposed in the communicating hole to close the communicating hole.
摘要翻译：本发明的氢制造装置包括：第一电极，其包括导电性基板和光催化性半导体层; 第二电极，其电连接到第一电极并且设置在相对于第一电极与第一区域相反的第二区域中; 第一区域被定义为设置有光催化半导体层的第一电极的表面侧的区域; 含水电解质溶液; 和包含这些的房屋。第一电极设置有第一通孔，第二电极设置有第二通孔; 并且第一通孔和第二通孔形成用于使第一区域和第二区域彼此连通的连通孔。具有与连通孔大致相同形状的离子交换膜设置在连通孔中以闭合连通孔。

10. 发明申请

US20140004435A1 PHOTOELECTRODE AND METHOD FOR PRODUCING SAME, PHOTOELECTROCHEMICAL CELL AND ENERGY SYSTEM USING SAME, AND HYDROGEN GENERATION METHOD 审中-公开
标题翻译：用于制造它们的光电及其制造方法，使用它们的光电化学电池和能量系统以及氢生成方法
公开(公告)号：US20140004435A1
公开(公告)日：2014-01-02
申请号：US14005156
申请日：2012-04-25
申请人： Satoru Tamura , Takaiki Nomura , Takahiro Suzuki , Kenichi Tokuhiro , Noboru Taniguchi , Kazuhito Hato , Nobuhiro Miyata
发明人： Satoru Tamura , Takaiki Nomura , Takahiro Suzuki , Kenichi Tokuhiro , Noboru Taniguchi , Kazuhito Hato , Nobuhiro Miyata
IPC分类号： C25B11/04 , C25B1/00 , H01M8/06
CPC分类号： C25B1/003 , B01J35/004 , C01B3/042 , C25B1/04 , C25B11/0405 , C25B11/0478 , H01G9/2027 , H01M8/0656 , H01M16/003 , Y02E10/542 , Y02E60/364 , Y02E60/366 , Y02P20/135 , Y02P70/521
摘要： A photoelectrode (100) of the present invention includes a conductive layer (12) and a photocatalytic layer (13) provided on the conductive layer (12). The conductive layer (12) is made of a metal nitride. The photocatalytic layer (13) is made of at least one selected from the group consisting of a nitride semiconductor and an oxynitride semiconductor. When the photocatalytic layer (13) is made of a n-type semiconductor, the energy difference between the vacuum level and the Fermi level of the conductive layer (12) is smaller than the energy difference between the vacuum level and the Fermi level of the photocatalytic layer (13).When the photocatalytic layer (13) is made of a p-type semiconductor, the energy difference between the vacuum level and the Fermi level of the conductive layer (12) is larger than the energy difference between the vacuum level and the Fermi level of the photocatalytic layer (13).
摘要翻译：本发明的光电极（100）包括设置在导电层（12）上的导电层（12）和光催化层（13）。导电层（12）由金属氮化物制成。光催化层（13）由选自氮化物半导体和氧氮化物半导体中的至少一种制成。当光催化层（13）由n型半导体制成时，导电层（12）的真空度与费米能级之间的能量差小于真空级与费米能级之间的能量差光催化层（13）。当光催化层（13）由p型半导体制成时，导电层（12）的真空度与费米能级之间的能量差大于真空度与费米能级之间的能量差光催化层（13）。

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