专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06333522B1 Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor 有权
标题翻译：发光元件，半导体发光元件及其制造方法
公开(公告)号：US06333522B1
公开(公告)日：2001-12-25
申请号：US09155420
申请日：1998-09-29
申请人： Tomio Inoue , Kenichi Sanada , Kenichi Koya , Yasuhiko Fukuda
发明人： Tomio Inoue , Kenichi Sanada , Kenichi Koya , Yasuhiko Fukuda
IPC分类号： H01L3300
CPC分类号： H01L33/40 , H01L25/167 , H01L33/32 , H01L33/38 , H01L33/62 , H01L2224/0401 , H01L2224/06102 , H01L2224/13144 , H01L2224/16 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73204 , H01L2224/73265 , H01L2924/01004 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01039 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/181 , H01L2924/19041 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A GaN-based LED element 1 having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element 2 formed in a silicon substrate. Electrical connections are provided via Au microbumps 11 and 12 between a p-side electrode 5 of the GaN-based LED element 1 and an n-side electrode 8 of the Si diode element 2 and between an n-side electrode 6 of the GaN-based LED element 1 and a p-side electrode 7 of the Si diode element 2. The Si diode element 2 functions to protect the LED element 1 from an electrostatic destruction. The Si diode element 2 has a backside electrode 9 connected to a leadframe 13a. The p-side electrode 7 of the Si diode element 2 has a bonding pad portion 10 connected to a leadframe 13b via an Au wire 17.
摘要翻译：在蓝宝石衬底上形成有包括GaN层等的双异质结构的GaN基LED元件1面朝下安装在形成于硅衬底中的Si二极管元件2上。在GaN基LED元件1的p侧电极5和Si二极管元件2的n侧电极8之间以及在GaN基LED元件1的n侧电极6之间的Au微胶片11和12之间提供电连接。基于硅的LED元件1和Si二极管元件2的p侧电极7.Si二极管元件2用于保护LED元件1免受静电破坏。 Si二极管元件2具有连接到引线框13a的背面电极9。 Si二极管元件2的p侧电极7具有通过Au线17与引线框架13b连接的接合焊盘部10。

2. 发明授权

US06642072B2 Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor 有权
公开(公告)号：US06642072B2
公开(公告)日：2003-11-04
申请号：US10014454
申请日：2001-12-14
申请人： Tomio Inoue , Kenichi Sanada , Kenichi Koya , Yasuhiko Fukuda
发明人： Tomio Inoue , Kenichi Sanada , Kenichi Koya , Yasuhiko Fukuda
IPC分类号： H01L2100
CPC分类号： H01L33/40 , H01L25/167 , H01L33/32 , H01L33/38 , H01L33/62 , H01L2224/0401 , H01L2224/06102 , H01L2224/13144 , H01L2224/16 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73204 , H01L2224/73265 , H01L2924/01004 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01039 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/181 , H01L2924/19041 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A GaN-based LED element 1 having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element 2 formed in a silicon substrate. Electrical connections are provided via Au microbumps 11 and 12 between a p-side electrode 5 of the GaN-based LED element 1 and an n-side electrode 8 of the Si diode element 2 and between an n-side electrode 6 of the GaN-based LED element 1 and a p-side electrode 7 of the Si diode element 2. The Si diode element 2 functions to protect the LED element 1 from an electrostatic destruction. The Si diode element 2 has a backside electrode 9 connected to a leadframe 13a. The p-side electrode 7 of the Si diode element 2 has a bonding pad portion 10 connected to a leadframe 13b via an Au wire 17.

3. 发明授权

US06597019B2 Semiconductor light-emitting device comprising an electrostatic protection element 有权
标题翻译：包括静电保护元件的半导体发光器件
公开(公告)号：US06597019B2
公开(公告)日：2003-07-22
申请号：US09984148
申请日：2001-10-29
申请人： Tomio Inoue , Kenichi Sanada , Kenichi Koya , Yasuhiko Fukuda
发明人： Tomio Inoue , Kenichi Sanada , Kenichi Koya , Yasuhiko Fukuda
IPC分类号： H01L3300
CPC分类号： H01L33/40 , H01L25/167 , H01L33/32 , H01L33/38 , H01L33/62 , H01L2224/0401 , H01L2224/06102 , H01L2224/13144 , H01L2224/16 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73204 , H01L2224/73265 , H01L2924/01004 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01039 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/181 , H01L2924/19041 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A GaN-based LED element 1 having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element 2 formed in a silicon substrate. Electrical connections are provided via Au microbumps 11 and 12 between a p-side electrode 5 of the GaN-based LED element 1 and an n-side electrode 8 of the Si diode element 2 and between an n-side electrode 6 of the GaN-based LED element 1 and a p-side electrode 7 of the Si diode element 2. The Si diode element 2 functions to protect the LED element 1 from an electrostatic destruction. The Si diode element 2 has a backside electrode 9 connected to a leadframe 13a. The p-side electrode 7 of the Si diode element 2 has a bonding pad portion 10 connected to a leadframe 13b via an Au wire 17.
摘要翻译：在蓝宝石衬底上形成有包括GaN层等的双异质结构的GaN基LED元件1面朝下安装在形成于硅衬底中的Si二极管元件2上。在GaN基LED元件1的p侧电极5和Si二极管元件2的n侧电极8之间以及在GaN基LED元件1的n侧电极6之间的Au微胶片11和12之间，基于硅的LED元件1和Si二极管元件2的p侧电极7.Si二极管元件2用于保护LED元件1免受静电破坏。 Si二极管元件2具有连接到引线框13a的背面电极9。 Si二极管元件2的p侧电极7具有通过Au线17与引线框架13b连接的接合焊盘部10。

4. 发明申请

US20070229811A1 Method for preparing focus-adjustment data for focusing lens system of optical defect-inspection apparatus, and focus adjustment wafer used in such method 有权
标题翻译：光学缺陷检查装置的聚焦透镜系统的聚焦调整数据的准备方法以及用于该方法的聚焦调整用晶片
公开(公告)号：US20070229811A1
公开(公告)日：2007-10-04
申请号：US11730571
申请日：2007-04-02
申请人： Kenichi Sanada
发明人： Kenichi Sanada
IPC分类号： G01N21/88
CPC分类号： G01N21/9501 , G01N21/956
摘要： In a method for preparing focus-adjustment data for a focusing lens system of an optical defect-inspection apparatus, a wafer having a plurality of defects is positioned in place with respect to a focal plane defined by the focusing lens system at a positioning step, and the detects on the wafer are optically and electronically detected at a detecting step. Then, defects having a predetermined size are extracted among the detected defects at extracting step, and a number of the extracted defects is counted as defect-number data. The positioning, detecting, extracting and counting steps are repeated whenever the focus-adjustment wafer is relatively shifted from the focal plane by a predetermined distance, and a defect-number distribution is produced based on the defect-number data thus obtained.
摘要翻译：在用于准备光学缺陷检查装置的聚焦透镜系统的聚焦调整数据的方法中，具有多个缺陷的晶片相对于由聚焦透镜系统在定位步骤中限定的焦平面位于适当的位置，并且在检测步骤中光学地和电子地检测晶片上的检测。然后，在提取步骤中，在检测到的缺陷中提取具有预定大小的缺陷，并将所提取的缺陷数作为缺陷数数据计数。只要聚焦调整晶片从焦平面相对移位预定距离，就重复定位，检测，提取和计数步骤，并且基于由此获得的缺陷数数据产生缺陷数分布。

5. 发明授权

US07817264B2 Method for preparing focus-adjustment data for focusing lens system of optical defect-inspection apparatus, and focus adjustment wafer used in such method 有权
标题翻译：光学缺陷检查装置的聚焦透镜系统的聚焦调整数据的准备方法以及用于该方法的聚焦调整用晶片
公开(公告)号：US07817264B2
公开(公告)日：2010-10-19
申请号：US11730571
申请日：2007-04-02
申请人： Kenichi Sanada
发明人： Kenichi Sanada
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/956
摘要： In a method for preparing focus-adjustment data for a focusing lens system of an optical defect-inspection apparatus, a wafer having a plurality of defects is positioned in place with respect to a focal plane defined by the focusing lens system at a positioning step, and the detects on the wafer are optically and electronically detected at a detecting step. Then, defects having a predetermined size are extracted among the detected defects at extracting step, and a number of the extracted defects is counted as defect-number data. The positioning, detecting, extracting and counting steps are repeated whenever the focus-adjustment wafer is relatively shifted from the focal plane by a predetermined distance, and a defect-number distribution is produced based on the defect-number data thus obtained.
摘要翻译：在用于准备光学缺陷检查装置的聚焦透镜系统的聚焦调整数据的方法中，具有多个缺陷的晶片相对于由聚焦透镜系统在定位步骤中限定的焦平面位于适当的位置，并且在检测步骤中光学地和电子地检测晶片上的检测。然后，在提取步骤中，在检测到的缺陷中提取具有预定大小的缺陷，并将所提取的缺陷数作为缺陷数数据计数。只要聚焦调整晶片从焦平面相对移位预定距离，就重复定位，检测，提取和计数步骤，并且基于由此获得的缺陷数数据产生缺陷数分布。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式