专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20230090881A1 FILM-FORMING METHOD AND FILM-FORMING SYSTEM 有权
公开(公告)号：US20230090881A1
公开(公告)日：2023-03-23
申请号：US17932341
申请日：2022-09-15
申请人： Tokyo Electron Limited
发明人： Masato ARAKI , Tadahiro ISHIZAKA , Kohichi SATOH
IPC分类号： C23C16/16 , C23C16/56
摘要： A film-forming method of embedding ruthenium in a substrate having a recess includes: (a) providing the substrate in a processing container; (b) supplying a gas containing a ruthenium raw material gas into the processing container to form a ruthenium layer; (c) annealing the ruthenium layer; and (d) supplying a gas containing an ozone gas into the processing container to etch the ruthenium layer, wherein (b), (c), and (d) are repeatedly executed in this order.

2. 发明申请

US20210054503A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
公开(公告)号：US20210054503A1
公开(公告)日：2021-02-25
申请号：US16996426
申请日：2020-08-18
申请人： Tokyo Electron Limited
发明人： Masato ARAKI , Kohichi SATOH , Tadahiro ISHIZAKA , Takashi SAKUMA
IPC分类号： C23C16/40 , C23C16/52
摘要： There is provided a substrate processing method which includes placing a substrate on a stage provided inside a processing container, and forming a ruthenium film on the substrate, wherein forming the ruthenium film includes repeating a cycle including: supplying a ruthenium-containing gas and a CO gas into the processing container; and stopping the supply of the ruthenium-containing gas and the CO gas into the processing container and exhausting a gas within the processing container.

3. 发明申请

US20200083098A1 Embedding Method and Processing System 审中-公开
公开(公告)号：US20200083098A1
公开(公告)日：2020-03-12
申请号：US16556977
申请日：2019-08-30
申请人： TOKYO ELECTRON LIMITED
发明人： Kohichi SATOH , Tadahiro ISHIZAKA
IPC分类号： H01L21/768 , C23C16/06 , C23C16/46 , C23C16/02
摘要： An embedding method includes: supplying a ruthenium-containing gas to a process chamber; and embedding ruthenium in a recess, which is formed in an insulating layer formed on a substrate, starting from a bottom portion of the recess using the ruthenium-containing gas, the bottom portion of the recess having a metal layer.

4. 发明申请

US20150004784A1 Copper Wiring Forming Method 有权
标题翻译：铜线形成方法
公开(公告)号：US20150004784A1
公开(公告)日：2015-01-01
申请号：US14316251
申请日：2014-06-26
申请人： TOKYO ELECTRON LIMITED
发明人： Osamu YOKOYAMA , Cheonsoo HAN , Takashi SAKUMA , Chiaki YASUMURO , Tatsuo HIRASAWA , Tadahiro ISHIZAKA , Kenji SUZUKI
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , H01L21/2885 , H01L21/76834 , H01L21/76843 , H01L21/76867 , H01L21/76876 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Provided is a method of forming a copper (Cu) wiring in a recess formed to have a predetermined pattern in an insulating film formed on a surface of a substrate. The method includes: forming a barrier film at least on a surface of the recess, the barrier film serving as a barrier for blocking diffusion of Cu; forming a Ru film on the barrier film by Chemical Mechanical Deposition (CVD); forming a Cu alloy film on the Ru film by Physical Vapor Deposition (PVD) to bury the recess; forming a Cu wiring using the Cu alloy film buried in the recess; and forming a dielectric film on the Cu wiring.
摘要翻译：提供了在形成在基板表面上的绝缘膜中形成为具有预定图案的凹部中形成铜（Cu）布线的方法。所述方法包括：至少在所述凹部的表面上形成阻挡膜，所述阻挡膜用作阻挡Cu的扩散的阻挡层; 通过化学机械沉积（CVD）在阻挡膜上形成Ru膜; 通过物理气相沉积（PVD）在Ru膜上形成Cu合金膜以埋藏凹槽; 使用埋在凹部中的Cu合金膜形成Cu布线; 并在Cu布线上形成电介质膜。

5. 发明公开

US20240363405A1 Substrate Processing Method, Apparatus, and System 审中-公开
公开(公告)号：US20240363405A1
公开(公告)日：2024-10-31
申请号：US18634671
申请日：2024-04-12
申请人： Tokyo Electron Limited
发明人： Masato SAKAMOTO , Tadahiro ISHIZAKA
IPC分类号： H01L21/768 , C23C16/02 , C23C16/06 , C23C16/52 , H01J37/32
CPC分类号： H01L21/76862 , C23C16/0227 , C23C16/06 , C23C16/52 , H01J37/32137 , H01J37/32449 , H01J37/32568 , H01L21/7685 , H01L21/76867 , H01L21/76877 , H01J2237/335
摘要： Provided is a substrate processing method for processing a substrate including a metal layer, the method comprising: supplying a halogen-containing gas to the substrate and reducing a metal oxide film formed on a surface of the metal layer; and supplying a reducing gas to the substrate and decreasing a residue remaining on the metal layer by supplying the halogen-containing gas.

6. 发明申请

US20230096191A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM 有权
公开(公告)号：US20230096191A1
公开(公告)日：2023-03-30
申请号：US17947545
申请日：2022-09-19
申请人： Tokyo Electron Limited
发明人： Takeshi ITATANI , Einosuke TSUDA , Tadahiro ISHIZAKA , Satoshi TAKEDA
IPC分类号： H01L21/285 , C23C16/16 , C23C16/54
摘要： A method of forming a ruthenium film on a substrate by supplying a ruthenium-containing gas includes: forming an adsorption inhibition layer that inhibits adsorption of the ruthenium-containing gas by supplying an adsorption inhibition gas to an end portion and a rear surface of the substrate; transferring the substrate to a chamber; and forming the ruthenium film on the substrate by supplying the ruthenium-containing gas to the chamber.

7. 发明申请

US20180012844A1 RUTHENIUM WIRING AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20180012844A1
公开(公告)日：2018-01-11
申请号：US15637780
申请日：2017-06-29
申请人： TOKYO ELECTRON LIMITED
发明人： Tadahiro ISHIZAKA , Toshiaki FUJISATO , Cheonsoo HAN
IPC分类号： H01L23/532 , H01L21/768 , H01L23/528
CPC分类号： H01L23/53209 , H01L21/28556 , H01L21/28562 , H01L21/76802 , H01L21/7684 , H01L21/76843 , H01L21/76856 , H01L21/76877 , H01L21/76879 , H01L21/76883 , H01L23/528 , H01L23/53252
摘要： There is provided a ruthenium wiring, including: a TiON film formed as a base film in a recess formed in a predetermined film on a surface of a substrate; and a ruthenium film formed on the TiON film so as to fill the recess.

8. 发明申请

US20160276218A1 METHOD OF MANUFACTURING Cu WIRING 审中-公开
标题翻译：铜线制造方法
公开(公告)号：US20160276218A1
公开(公告)日：2016-09-22
申请号：US15072165
申请日：2016-03-16
申请人： Tokyo Electron Limited
发明人： Kenji MATSUMOTO , Tadahiro ISHIZAKA , Peng CHANG , Osamu YOKOYAMA , Takashi SAKUMA , Hiroyuki NAGAI
IPC分类号： H01L21/768 , H01L23/532
CPC分类号： H01L23/53238 , H01L21/28556 , H01L21/76826 , H01L21/76831 , H01L21/76843
摘要： In a Cu wiring manufacturing method, a MnOx film which becomes a self-formed barrier film by reaction with an interlayer insulating film of a substrate is formed on a surface of a recess formed in the interlayer insulating film by ALD. A hydrogen radical process is performed on a surface of the MnOx film to reduce the surface of the MnOx film. A Ru film is formed by CVD on the surface of the MnOx film which has been reduced by the hydrogen radical process. A Cu-based film is formed on the Ru film by PVD to be filled in the recess. When the Ru film is formed, a film-formation condition of the MnOx film and a condition of the hydrogen radical process are set such that nucleus formation is facilitated and the Ru film is formed in a state where a surface smoothness is high.
摘要翻译：在Cu布线制造方法中，通过ALD形成在层间绝缘膜的凹部的表面上，形成通过与基板的层间绝缘膜反应而成为自形成的阻挡膜的MnO x膜。在MnO x膜的表面上进行氢自由基处理以减少MnO x膜的表面。在通过氢自由基还原的MnO x膜的表面上通过CVD形成Ru膜。通过PVD在Ru膜上形成Cu基膜以填充在凹部中。当形成Ru膜时，设定MnO x膜的成膜条件和氢自由基工艺的条件，使得形成核容易，并且在表面光滑度高的状态下形成Ru膜。

9. 发明申请

US20150332961A1 Cu Wiring Fabrication Method and Storage Medium 有权
标题翻译：铜线制造方法和存储介质
公开(公告)号：US20150332961A1
公开(公告)日：2015-11-19
申请号：US14701555
申请日：2015-05-01
申请人： TOKYO ELECTRON LIMITED
发明人： Tadahiro ISHIZAKA , Tatsuo HIRASAWA , Takashi SAKUMA , Osamu YOKOYAMA
IPC分类号： H01L21/768
CPC分类号： H01L21/76882 , H01L21/2855 , H01L21/76843 , H01L21/76876 , H01L21/76883
摘要： Cu wiring fabrication method for fabricating Cu wiring with respect to substrate having interlayer dielectric film having trench formed thereon, includes: forming barrier film on surface of the trench; forming Ru film on surface of the barrier film by CVD; burying the trench by forming Cu film or Cu alloy film on the Ru film; forming Cu film or Cu alloy film at corners of bottom of the trench while re-sputtering the formed Cu film or Cu alloy film in a condition where first formed Cu film or Cu alloy film re-sputtered by an ion action of the plasma generation gas; and subsequently burying the Cu film or the Cu alloy film in the trench in condition where the Cu film or the Cu alloy film is formed on field portion of the substrate, and reflows in the trench by an ion action of the plasma generation gas.
摘要翻译：涉及在其上形成有沟槽的具有沟槽的层间绝缘膜的衬底制造Cu布线的Cu布线制造方法包括：在沟槽的表面上形成阻挡膜; 通过CVD在阻挡膜的表面上形成Ru膜; 通过在Ru膜上形成Cu膜或Cu合金膜来掩埋沟槽; 在沟槽底部的角落处形成Cu膜或Cu合金膜，同时在通过等离子体发生气体的离子作用重新溅射的第一次形成的Cu膜或Cu合金膜的条件下再溅射形成的Cu膜或Cu合金膜 ; 并且随后在衬底的场部形成Cu膜或Cu合金膜的状态下将Cu膜或Cu合金膜埋入沟槽中，并且通过等离子体产生气体的离子作用在沟槽中回流。

10. 发明申请

US20140287163A1 METHOD OF FORMING COPPER WIRING AND METHOD AND SYSTEM FOR FORMING COPPER FILM 审中-公开
标题翻译：形成铜线的方法和形成铜膜的方法和系统
公开(公告)号：US20140287163A1
公开(公告)日：2014-09-25
申请号：US14297726
申请日：2014-06-06
申请人： TOKYO ELECTRON LIMITED
发明人： Tadahiro ISHIZAKA , Atsushi GOMI , Takara FUKUSHIMA , Osamu YOKOYAMA , Takashi SAKUMA , Chiaki YASUMURO , Hiroyuki TOSHIMA , Tatsuo HATANO , Yasushi MIZUSAWA , Masamichi HARA , Kenzi SUZUKI
IPC分类号： H01L21/02
CPC分类号： H01L21/02104 , C23C14/025 , C23C14/046 , C23C14/345 , C23C14/541 , C23C14/5806 , C23C16/16 , H01J37/32899 , H01J37/34
摘要： A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.
摘要翻译：提供了一种在衬底中形成的沟槽或孔中形成Cu布线的方法。该方法包括在沟槽或孔的表面上形成阻挡膜，在阻挡膜上形成Ru膜，并且通过在使衬底退火的同时在PVD膜上形成Cu膜而将Cu嵌入沟槽或孔中，使得发生铜进入沟槽或孔的迁移。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式