专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10385453B2 Film forming apparatus 有权
公开(公告)号：US10385453B2
公开(公告)日：2019-08-20
申请号：US15240316
申请日：2016-08-18
申请人： TOKYO ELECTRON LIMITED
发明人： Masato Yonezawa , Shigehiro Miura , Hiroyuki Akama , Koji Yoshii
IPC分类号： C23C16/52 , C23C16/46 , C23C16/455 , C23C16/458
摘要： A film forming apparatus for performing a predetermined film forming process on a substrate mounted on an upper surface of a rotary table installed within a process vessel while rotating the rotary table and heating the substrate by a heating part, includes: a contact type first temperature measuring part configured to measure a temperature of the heating part; a non-contact type second temperature measuring part configured to measure a temperature of the substrate; and a control part configured to control a power supplied to the heating part based on at least one among a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part. The control part changes a method for controlling the power when the predetermined film forming process is performed on the substrate and when the substrate is loaded into or unloaded from the process vessel.

2. 发明授权

US10151031B2 Method for processing a substrate and substrate processing apparatus 有权
公开(公告)号：US10151031B2
公开(公告)日：2018-12-11
申请号：US15617102
申请日：2017-06-08
申请人： Tokyo Electron Limited
发明人： Hitoshi Kato , Jun Sato , Masahiro Murata , Kentaro Oshimo , Tomoko Sugano , Shigehiro Miura
IPC分类号： H01L21/02 , C23C16/458 , C23C16/455 , C23C16/34 , C23C16/507 , C23C16/52
摘要： A method for processing a substrate is provided. According to the method, a process gas is supplied to a surface of a substrate, and then a separation gas is supplied to the surface of the substrate. Moreover, a first plasma processing gas is supplied to the surface of the substrate in a first state in which a distance between the first plasma generation unit and the turntable is set at a first distance, and a second plasma processing gas is supplied to the surface of the substrate in a second state in which a distance between the second plasma generation unit and the turntable is set at a second distance shorter than the first distance. Furthermore, the separation gas is supplied to the surface of the substrate.

3. 发明授权

US09777369B2 Method of depositing a film, recording medium, and film deposition apparatus 有权
公开(公告)号：US09777369B2
公开(公告)日：2017-10-03
申请号：US14303763
申请日：2014-06-13
申请人： Tokyo Electron Limited
发明人： Hitoshi Kato , Masahiro Murata , Kentaro Oshimo , Shigehiro Miura
IPC分类号： C23C16/00 , C23C16/34 , H01J37/32 , C23C16/455
CPC分类号： C23C16/345 , C23C16/45536 , C23C16/45557 , H01J37/321 , H01J37/32449 , H01J37/32623 , H01J37/32651 , H01J37/32715 , H01J37/32779 , H01J37/32816
摘要： A method of depositing a thin film on a substrate inside a vacuum chamber includes a first process that deposits a first film on the substrate, the first process including a process of supplying an active species that is obtained by changing a gas to plasma and is related to a quality of the thin film to the substrate; and a second process that deposits a second film that is the same type as that of the first film on the first film, the second process including a process of supplying the active species to the substrate so that a supply quantity of the active species per a unit film thickness is greater than a first supply quantity of the active species per the unit film thickness in the first process by adjusting a controlled parameter.

4. 发明申请

US20140220260A1 SUBSTRATE PROCESSING APPARATUS AND METHOD OF DEPOSITING A FILM 审中-公开
标题翻译：基板处理装置和沉积膜的方法
公开(公告)号：US20140220260A1
公开(公告)日：2014-08-07
申请号：US14171928
申请日：2014-02-04
申请人： Tokyo Electron Limited
发明人： Jun Yamawaku , Chishio Koshimizu , Mitsuhiro Tachibana , Hitoshi Kato , Takeshi Kobayashi , Shigehiro Miura , Takafumi Kimura
IPC分类号： C23C16/50
CPC分类号： C23C16/45519 , C23C16/4554 , C23C16/45551 , H01J37/32541 , H01J37/32568 , H01J37/32715 , H01J37/32733
摘要： A substrate processing apparatus for performing a plasma process inside a vacuum chamber includes a turntable including substrate mounting portions for the substrates formed along a peripheral direction of the vacuum chamber to orbitally revolve these; a plasma generating gas supplying portion supplying a plasma generating gas into a plasma generating area; an energy supplying portion supplying energy to the plasma generating gas to change the plasma generating gas to plasma; a bias electrode provided on a lower side of the turntable to face the plasma generating area and leads ions in the plasma onto surfaces of the wafers; and an evacuation port evacuating the vacuum chamber, wherein the bias electrode extends from a rotational center of the turntable to an outer edge side, and a width of the bias electrode in a rotational direction is smaller than a distance between adjacent substrate mounting portions.
摘要翻译：用于在真空室内进行等离子体处理的基板处理装置包括转盘，其包括基板安装部，用于沿着真空室的周向形成的基板，以对其进行轨道旋转; 等离子体产生气体供应部分，其将等离子体产生气体供应到等离子体产生区域中; 向所述等离子体发生气体供给能量以将所述等离子体产生气体变更为等离子体的能量供给部; 偏置电极，设置在转台的下侧以面对等离子体产生区域，并将等离子体中的离子引导到晶片的表面上; 以及将真空室抽出的排气口，其中偏置电极从转台的旋转中心延伸到外缘侧，偏置电极的旋转方向的宽度小于相邻的基板安装部之间的距离。

5. 发明申请

US20140017905A1 FILM DEPOSITION APPARATUS AND METHOD OF DEPOSITING FILM 有权
标题翻译：薄膜沉积装置和沉积膜的方法
公开(公告)号：US20140017905A1
公开(公告)日：2014-01-16
申请号：US13936523
申请日：2013-07-08
申请人： Tokyo Electron Limited
发明人： Hitoshi Kato , Shigehiro Miura
IPC分类号： H01L21/02
CPC分类号： H01L21/0228 , C23C16/45508 , C23C16/45551 , C23C16/45587 , C23C16/4584
摘要： A film deposition apparatus that laminates layers of reaction product by repeating cycles of sequentially supplying process gases that mutually reacts in a vacuum atmosphere includes a turntable receiving a substrate, process gas supplying portions supplying mutually different process gases to separated areas arranged in peripheral directions, and a separation gas supplying portion separating the process gases, wherein at least one process gas supplying portion extends between peripheral and central portions of the turntable and includes a gas nozzle discharging one process gas toward the turntable and a current plate provided on an upstream side to allow the separation gas to flow onto its upper surface, wherein a gap between the current plate and the turntable is gradually decreased from a central side of the turntable to a peripheral side of the turntable, and the gap is smaller on the peripheral side by 1 mm or greater.
摘要翻译：一种成膜装置，其通过重复连续地供给在真空气氛中相互反应的处理气体的循环来层叠反应产物层，包括：接收基板的转台，向周向排列的分离区域供给相互不同的处理气体的处理气体供给部;以及分离工艺气体的分离气体供给部分，其中至少一个工艺气体供应部分在转盘的周边部分和中心部分之间延伸，并且包括将一个工艺气体朝向转盘排出的气体喷嘴和设置在上游侧的电流板，以允许分离气体流向其上表面，其中当前板和转盘之间的间隙从转台的中心侧逐渐减小到转盘的周边，并且周边侧的间隙较小或更大。

6. 发明申请

US20130180452A1 FILM DEPOSITION APPARATUS 审中-公开
标题翻译：胶片沉积装置
公开(公告)号：US20130180452A1
公开(公告)日：2013-07-18
申请号：US13742697
申请日：2013-01-16
申请人： Tokyo Electron Limited
发明人： Hitoshi KATO , Toshiyuki Nakatsubo , Shigehiro Miura
IPC分类号： C23C16/458
CPC分类号： C23C16/458 , C23C16/45551 , C23C16/45578 , C23C16/45591
摘要： A film deposition apparatus deposits a thin film on a substrate by repeating a cycle of supplying plural kinds of process gases that react with each other in a vacuum chamber. The film deposition apparatus includes a turntable to hold a substrate thereon and to rotate the substrate, and a plurality of process gas supplying parts. At least one of the process gas supplying parts extends from the center to the periphery and is formed as a gas nozzle including gas discharge holes.The gas discharge holes are formed along a length direction of the gas nozzle. The film deposition apparatus also includes current plates provided on upstream and downstream sides in a rotational direction of the turntable and extending along the length direction of the gas nozzle, and having at least one bent section bent downward from an outer edge of the current plates.
摘要翻译：膜沉积设备通过重复在真空室中反复提供彼此反应的多种处理气体的循环，将薄膜沉积在基板上。成膜装置包括用于在其上保持基板并使基板旋转的转盘和多个处理气体供给部件。至少一个工艺气体供给部件从中心延伸到周边，并且形成为包括气体排出孔的气体喷嘴。气体排出孔沿气体喷嘴的长度方向形成。成膜装置还包括沿转台的旋转方向设置在上游侧和下游侧并沿着气体喷嘴的长度方向延伸的电流板，并且具有从电流板的外边缘向下弯曲的至少一个弯曲部。

7. 发明授权

US11328901B2 Deposition method 有权
公开(公告)号：US11328901B2
公开(公告)日：2022-05-10
申请号：US16826491
申请日：2020-03-23
申请人： Tokyo Electron Limited
发明人： Shigehiro Miura , Masato Yonezawa , Takehiro Fukada , Yoshitaka Enoki , Yuji Sawada
IPC分类号： H01J37/32 , H01L21/02 , C23C16/455 , C23C16/40
摘要： A deposition method performed by a deposition apparatus is provided. The deposition apparatus includes an antenna that forms an inductive magnetic field in a plasma processing region; and a rotary table that revolves a substrate around a rotational center of the rotary table. The method includes: supplying an ignition gas containing a noble gas and an additive gas to the plasma processing region; setting electric power supplied to the antenna to a first predetermined value to form a plasma of the ignition gas; increasing the electric power to a second predetermined value; stopping the supply of the additive gas; switching a gas supplied to the plasma processing region from the ignition gas to a gas for forming the film; and lifting an end of the antenna on a side closer to the rotational center while maintaining a height of another end of the antenna.

8. 发明授权

US11274372B2 Film deposition apparatus 有权
公开(公告)号：US11274372B2
公开(公告)日：2022-03-15
申请号：US15591300
申请日：2017-05-10
申请人： Tokyo Electron Limited
发明人： Shigehiro Miura
IPC分类号： C23C16/458 , H01L21/687 , C23C16/505 , H01L21/683 , H01J37/32 , H01L21/02 , C23C16/40 , C23C16/455 , C23C16/56 , C23C16/24 , C23C16/50 , C23C16/52
摘要： A film deposition apparatus includes a process chamber, a rotary table, a first reaction gas supply part disposed in a first process region and configured to supply a first reaction gas, a second reaction gas supply part disposed in a second process region apart from the first reaction gas supply part in a circumferential direction of the rotary table and configured to supply a second reaction gas, and separation gas supply parts disposed in a separation region between the first reaction gas supply part and the second reaction gas supply part and configured to supply a separation gas for separating the first reaction gas and the second reaction gas. The separation gas supply parts are configured to supply, in addition to the separation gas, an additive gas for controlling adsorption of the first reaction gas or for etching a part of material components included in the first reaction gas.

9. 发明授权

US11118264B2 Plasma processing method and plasma processing apparatus 有权
公开(公告)号：US11118264B2
公开(公告)日：2021-09-14
申请号：US15344674
申请日：2016-11-07
申请人： Tokyo Electron Limited
发明人： Shigehiro Miura
IPC分类号： C23C16/455 , C23C16/50 , C23C16/52
摘要： A plasma processing method is provided. In the plasma processing method, a plurality of types of mixed gases is supplied to a plurality of areas on a film deposited on a surface of a substrate. The plurality of types of mixed gases contains a plurality types of noble gases. The plurality of types of mixed gases has different mix proportions of the plurality types of noble gases from each other. The plurality of types of mixed gases is converted to plasma. A plasma process is performed by using the mixed gases converted to the plasma on the film.

10. 发明授权

US10604837B2 Film deposition apparatus 有权
公开(公告)号：US10604837B2
公开(公告)日：2020-03-31
申请号：US15018987
申请日：2016-02-09
申请人： Tokyo Electron Limited
发明人： Hitoshi Kato , Shigehiro Miura
IPC分类号： C23C16/455 , C23C16/46
摘要： A film deposition apparatus includes a process chamber having a substantially cylindrical shape, and a turntable to receive a substrate thereon provided in the process chamber. At least one gas nozzle extends toward a central axis of the turntable from an inner side wall of the process chamber above the turntable along a radial direction of the turntable. At least one side wall heater is provided to cover at least part of the inner side wall of the process chamber and/or at least part of a surrounding area of the central axis of the turntable in a wall-shaped manner.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式