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1. 发明申请

US20140102638A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20140102638A1
公开(公告)日：2014-04-17
申请号：US14138166
申请日：2013-12-23
申请人： Tokyo Electron Limited
发明人： Yoshinobu Ooya , Akira Tanabe , Yoshinori Yasuta
IPC分类号： H01J37/02
CPC分类号： H01J37/02 , H01J37/32091 , H01J37/32165 , H01J2237/3348
摘要： A plasma processing apparatus capable of optimizing a plasma process is provided. The plasma processing apparatus includes a control unit for controlling a minimum energy and a maximum energy of ions incident onto a substrate independently of each other such that ion energy of the ions are concentrated at a first energy band and a second energy band respectively. In the plasma processing apparatus, the oxide film is etched to form a hole within the oxide film, the first energy band is lower than a first energy value at which the oxide film is etched while the organic film is not etched, and the second energy band is higher than a second energy value at which an etching yield at an inclined surface of the hole is higher than an etching yield of an upper surface of the organic film.
摘要翻译：提供了能够优化等离子体处理的等离子体处理装置。等离子体处理装置包括用于独立地控制入射到衬底上的离子的最小能量和最大能量的控制单元，使得离子的离子能量分别集中在第一能带和第二能带。在等离子体处理装置中，蚀刻氧化膜以在氧化膜内形成空穴，第一能带低于蚀刻氧化膜的第一能量值，而有机膜未被蚀刻，第二能量带高于第二能量值，在该第二能量值处，孔的倾斜表面处的蚀刻产率高于有机膜的上表面的蚀刻产率。

2. 发明授权

US09478387B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US09478387B2
公开(公告)日：2016-10-25
申请号：US14138166
申请日：2013-12-23
申请人： Tokyo Electron Limited
发明人： Yoshinobu Ooya , Akira Tanabe , Yoshinori Yasuta
IPC分类号： H01L21/00 , H01J37/02 , H01J37/32
CPC分类号： H01J37/02 , H01J37/32091 , H01J37/32165 , H01J2237/3348
摘要： A plasma processing apparatus capable of optimizing a plasma process is provided. The plasma processing apparatus includes a control unit for controlling a minimum energy and a maximum energy of ions incident onto a substrate independently of each other such that ion energy of the ions are concentrated at a first energy band and a second energy band respectively. In the plasma processing apparatus, the oxide film is etched to form a hole within the oxide film, the first energy band is lower than a first energy value at which the oxide film is etched while the organic film is not etched, and the second energy band is higher than a second energy value at which an etching yield at an inclined surface of the hole is higher than an etching yield of an upper surface of the organic film.
摘要翻译：提供了能够优化等离子体处理的等离子体处理装置。等离子体处理装置包括用于独立地控制入射到衬底上的离子的最小能量和最大能量的控制单元，使得离子的离子能量分别集中在第一能带和第二能带。在等离子体处理装置中，蚀刻氧化膜以在氧化膜内形成空穴，第一能带低于蚀刻氧化膜的第一能量值，而有机膜未被蚀刻，第二能量带高于第二能量值，在该第二能量值处，孔的倾斜表面处的蚀刻产率高于有机膜的上表面的蚀刻产率。

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