专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120115286A1 THIN-FILM TRANSISTOR PRODUCING METHOD 有权
标题翻译：薄膜晶体管生产方法
公开(公告)号：US20120115286A1
公开(公告)日：2012-05-10
申请号：US13382448
申请日：2010-02-17
申请人： Tokuaki Kuniyoshi , Hidehito Kitakado , Tadayoshi Miyamoto , Kazuhide Tomiyasu , Sumio Katoh
发明人： Tokuaki Kuniyoshi , Hidehito Kitakado , Tadayoshi Miyamoto , Kazuhide Tomiyasu , Sumio Katoh
IPC分类号： H01L21/336
CPC分类号： H01L29/78621 , G02F1/1368 , H01L29/4908 , H01L29/66765
摘要： Provided is a thin film transistor manufacture method by which a thin film transistor provided with LDD regions can be produced without increasing the number of photo masks used. An etching stopper layer (35) formed on a polycrystalline silicon film (26) of a TFT (10) is used not only as a mask to protect a channel region (27) when a source electrode and a drain electrode are formed by etching, but also as a mask when ions are implanted to form a source/drain regions (39). Thus, phosphorus, which is ion-implanted in the polycrystalline silicon film (26) to form the source/drain regions (39), is not implanted in the LDD region (38) and, accordingly, it is not necessary to additionally form a resist pattern to be used as a mask when ions are implanted.
摘要翻译：提供了一种薄膜晶体管制造方法，通过该方法可以制造具有LDD区的薄膜晶体管，而不增加所使用的光掩模的数量。形成在TFT（10）的多晶硅膜（26）上的蚀刻停止层（35）不仅用作掩模以在通过蚀刻形成源电极和漏电极时保护沟道区（27）而且当离子被注入以形成源/漏区（39）时也作为掩模。因此，离子注入多晶硅膜（26）中以形成源极/漏极区（39）的磷未被植入LDD区（38）中，因此不需要另外形成当植入离子时用作掩模的抗蚀剂图案。

2. 发明授权

US08492212B2 Thin-film transistor producing method 有权
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US08492212B2
公开(公告)日：2013-07-23
申请号：US13382448
申请日：2010-02-17
申请人： Tokuaki Kuniyoshi , Hidehito Kitakado , Tadayoshi Miyamoto , Kazuhide Tomiyasu , Sumio Katoh
发明人： Tokuaki Kuniyoshi , Hidehito Kitakado , Tadayoshi Miyamoto , Kazuhide Tomiyasu , Sumio Katoh
IPC分类号： H01L29/66765
CPC分类号： H01L29/78621 , G02F1/1368 , H01L29/4908 , H01L29/66765
摘要： Provided is a thin film transistor manufacture method by which a thin film transistor provided with LDD regions can be produced without increasing the number of photo masks used. An etching stopper layer (35) formed on a polycrystalline silicon film (26) of a TFT (10) is used not only as a mask to protect a channel region (27) when a source electrode and a drain electrode are formed by etching, but also as a mask when ions are implanted to form a source/drain regions (39). Thus, phosphorus, which is ion-implanted in the polycrystalline silicon film (26) to form the source/drain regions (39), is not implanted in the LDD region (38) and, accordingly, it is not necessary to additionally form a resist pattern to be used as a mask when ions are implanted.
摘要翻译：提供了一种薄膜晶体管制造方法，通过该方法可以制造具有LDD区的薄膜晶体管，而不增加所使用的光掩模的数量。形成在TFT（10）的多晶硅膜（26）上的蚀刻停止层（35）不仅用作掩模以在通过蚀刻形成源电极和漏电极时保护沟道区（27）而且当离子被注入以形成源/漏区（39）时也作为掩模。因此，离子注入多晶硅膜（26）中以形成源极/漏极区（39）的磷未被植入LDD区（38）中，因此不需要另外形成当植入离子时用作掩模的抗蚀剂图案。

3. 发明申请

US20120242624A1 THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME, SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME, AS WELL AS DISPLAY 审中-公开
标题翻译：薄膜晶体管及其制造方法，半导体器件及其制造方法，作为显示器
公开(公告)号：US20120242624A1
公开(公告)日：2012-09-27
申请号：US13511630
申请日：2010-07-21
申请人： Kazuhide Tomiyasu , Hidehito Kitakado , Tadayoshi Miyamoto
发明人： Kazuhide Tomiyasu , Hidehito Kitakado , Tadayoshi Miyamoto
IPC分类号： G06F3/042 , G09G5/00 , H01L21/336 , H01L31/18 , H01L29/786 , H01L27/146
CPC分类号： G02F1/136227 , H01L27/124 , H01L27/1248 , H01L29/41733 , H01L29/66765 , H01L29/78621
摘要： An object of the present invention is to provide a thin film transistor fabricating method including a simplified step of forming contact holes. This method involves previously removing a gate insulating film (115) on a gate electrode (110) which is not covered with a channel layer (120) in a TFT (100). Hence, an insulating film formed on the gate electrode (110) which is not covered with the channel layer (120) becomes equal in thickness to an insulating film formed on a source region (120a) and a drain region (120b). Therefore, a contact hole (155) reaching a surface of the gate electrode (110) can be formed simultaneously with a contact hole (135a) reaching a surface of the source region (120a) and a contact hole (135b) reaching a surface of the drain region (120b).
摘要翻译：本发明的目的是提供一种包括形成接触孔的简化步骤的薄膜晶体管制造方法。该方法包括预先去除TFT（100）中未被沟道层（120）覆盖的栅电极（110）上的栅极绝缘膜（115）。因此，形成在未被沟道层（120）覆盖的栅极（110）上的绝缘膜的厚度与形成在源极区（120a）和漏极区（120b）上的绝缘膜的厚度相等。因此，到达栅电极（110）的表面的接触孔（155）可以与到达源极区域（120a）的表面的接触孔（135a）同时形成，并且接触孔（135b）到达漏极区域（120b）。

4. 发明申请

US20120200546A1 SEMICONDUCTOR DEVICE, DISPLAY DEVICE PROVIDED WITH SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件，显示器件及其制造方法以及制造半导体器件的方法
公开(公告)号：US20120200546A1
公开(公告)日：2012-08-09
申请号：US13501830
申请日：2010-06-07
申请人： Tadayoshi Miyamoto , Kazuhide Tomiyasu , Sumio Katoh
发明人： Tadayoshi Miyamoto , Kazuhide Tomiyasu , Sumio Katoh
IPC分类号： G06F3/038 , H01L21/20 , H01L29/786
CPC分类号： H01L27/14632 , G02F1/13338 , G02F1/136209 , G02F1/1368 , G02F2202/104 , H01L27/1214 , H01L27/14623 , H01L29/78633
摘要： Disclosed is a semiconductor device including plural types of semiconductor elements having structures that have respective thicknesses suitable for their uses formed in the same process. A semiconductor device (100) includes a TFT (40) and a photodiode (50). A gate electrode (110) of the TFT (40) and a light-shielding layer (60) of the photodiode (50) are formed in the same process. However, because the film thickness of the gate electrode (110) is small, the breakage of an island-shaped silicon layer (120), which will be the channel layer, at the edge of the gate electrode (110) can be prevented. Also, because the film thickness of the light-shielding layer (60) is large, the light entering through a surface of a glass substrate (101) on the side opposite from the surface on which the TFT is formed can be reliably blocked by the light-shielding layer (60). Consequently, the detection sensitivity of the photodiode (50) can be increased.
摘要翻译：公开了一种半导体器件，其包括多种类型的半导体元件，其具有在相同工艺中形成的具有适合其用途的各自厚度的结构。半导体器件（100）包括TFT（40）和光电二极管（50）。以相同的工艺形成TFT（40）的栅电极（110）和光电二极管（50）的遮光层（60）。然而，由于栅电极（110）的膜厚小，所以能够防止栅电极（110）的边缘处的作为沟道层的岛状硅层（120）的破损。此外，由于遮光层（60）的膜厚大，因此通过玻璃基板（101）的与形成有TFT的表面相反一侧的表面进入的光可以被可靠地阻挡遮光层（60）。因此，可以增加光电二极管（50）的检测灵敏度。

5. 发明申请

US20120242923A1 THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE 审中-公开
标题翻译：薄膜晶体管基板，其制造方法和显示装置
公开(公告)号：US20120242923A1
公开(公告)日：2012-09-27
申请号：US13513695
申请日：2010-10-28
申请人： Tadayoshi Miyamoto , Kazuhide Tomiyasu
发明人： Tadayoshi Miyamoto , Kazuhide Tomiyasu
IPC分类号： H01L33/08 , G02F1/136
CPC分类号： H01L27/1225 , G02F1/136227 , H01L27/1248 , H01L29/66969 , H01L29/7869
摘要： An active matrix substrate (20a) includes a gate electrode (11aa), a gate insulating layer (12) covering the gate electrode (11aa), an oxide semiconductor layer (13a) provided on the gate insulating layer (12) and having a channel region (C), a source electrode (16aa) and a drain electrode (16b) provided on the oxide semiconductor layer (13a), an interlayer insulating film (17) covering the oxide semiconductor layer (13a), the source electrode (16aa), and the drain electrode (16b), and a planarization film (18) provided on the interlayer insulating film (17). An opening (Ca) reaching the interlayer insulating film (17) is formed at a portion of the planarization film (18) which is located over the channel region (C).
摘要翻译：有源矩阵基板（20a）包括栅电极（11aa），覆盖栅极电极（11aa）的栅极绝缘层（12），设置在栅极绝缘层（12）上的氧化物半导体层（13a）设置在氧化物半导体层（13a）上的区域（C），源电极（16aa）和漏电极（16b），覆盖氧化物半导体层（13a）的层间绝缘膜（17），漏电极（16b）和设置在层间绝缘膜（17）上的平坦化膜（18）。在位于沟道区域（C）上方的平坦化膜（18）的一部分处形成到达层间绝缘膜（17）的开口（Ca）。

6. 发明授权

US08842229B2 Thin film transistor substrate, method for producing same, and display device 有权
标题翻译：薄膜晶体管基板，其制造方法以及显示装置
公开(公告)号：US08842229B2
公开(公告)日：2014-09-23
申请号：US13640381
申请日：2011-01-12
申请人： Tadayoshi Miyamoto
发明人： Tadayoshi Miyamoto
IPC分类号： G02F1/136 , H01L27/12
CPC分类号： H01L27/1214 , H01L27/1225
摘要： Disclosed is an active matrix substrate (20a) that includes: an insulating substrate (10a); a first thin film transistor (5a) that is formed on the insulating substrate (10a) and that includes a first oxide semiconductor layer (13a) having a first channel region (Ca); a second thin film transistor (5b) that is formed on the insulating substrate (10a) and that includes a second oxide semiconductor layer (13b) having a second channel region (Cb); and an interlayer insulating film (17) that covers the first oxide semiconductor layer (13a) and the second oxide semiconductor layer (13b). A channel protective film (25), which is formed of a material different from that of the interlayer insulating film (17), is provided between the second oxide semiconductor layer (13b) and the interlayer insulating film (17) on the second channel region (Cb) in the second oxide semiconductor layer (13b).
摘要翻译：公开了一种有源矩阵基板（20a），其包括：绝缘基板（10a）; 第一薄膜晶体管（5a），其形成在所述绝缘基板（10a）上并且包括具有第一沟道区域（Ca）的第一氧化物半导体层（13a）; 第二薄膜晶体管（5b），其形成在所述绝缘基板（10a）上并且包括具有第二沟道区域（Cb）的第二氧化物半导体层（13b）; 和覆盖第一氧化物半导体层（13a）和第二氧化物半导体层（13b）的层间绝缘膜（17）。在第二沟道区域上的第二氧化物半导体层（13b）和层间绝缘膜（17）之间设置由不同于层间绝缘膜（17）的材料形成的沟道保护膜（25）（Cb）在第二氧化物半导体层（13b）中。

7. 发明申请

US20110157113A1 DISPLAY PANEL AND DISPLAY DEVICE USING THE SAME 审中-公开
标题翻译：显示面板和使用该显示面板的显示设备
公开(公告)号：US20110157113A1
公开(公告)日：2011-06-30
申请号：US13062077
申请日：2009-06-04
申请人： Tadayoshi Miyamoto , Katsuyuki Suga , Fumiyoshi Yoshioka , Satomi Hasegawa
发明人： Tadayoshi Miyamoto , Katsuyuki Suga , Fumiyoshi Yoshioka , Satomi Hasegawa
IPC分类号： G09G5/00
CPC分类号： H01L27/12 , H01L21/02422 , H01L21/02532 , H01L21/02683 , H01L21/02691 , H01L21/268 , H01L27/1229 , H01L27/1285
摘要： A display panel (100) is provided which allows optimization of the respective characteristics of different semiconductor elements without incurring an increase in manufacturing cost. The display panel (100) includes: pixel TFTs (11) disposed in a display section (101); scanning driver TFTs (12) disposed in a scanning driver (102); and data driver (13) disposed in a data driver (103). A polysilicon film of the pixel TFTs (11), the scanning driver TFTs (12), and the data driver TFTs (13) is polycrystallized by irradiation of laser light so as to have a crystal growth direction that goes along a scanning direction of the laser light. The pixel TFTs (11) are disposed so that the crystal growth direction of the polysilicon film is substantially perpendicular to the directions of current paths of the pixel TFTs (11). The scanning driver TFTs (12) and the data driver TFTs (13) are so that the crystal growth direction of the polysilicon film is substantially parallel to the directions of current paths of the scanning driver TFTs (12) and the data driver TFTs (13).
摘要翻译：提供了显示面板（100），其允许优化不同半导体元件的相应特性，而不会导致制造成本的增加。显示面板（100）包括：设置在显示部（101）中的像素TFT（11）; 设置在扫描驱动器（102）中的扫描驱动TFT（12）; 和数据驱动器（13），其设置在数据驱动器（103）中。像素TFT（11），扫描驱动器TFT（12）和数据驱动器TFT（13）的多晶硅膜通过激光的照射被多晶化，以具有沿着扫描方向的晶体生长方向激光灯。像素TFT（11）被布置成使得多晶硅膜的晶体生长方向基本上垂直于像素TFT（11）的电流路径的方向。扫描驱动器TFT（12）和数据驱动器TFT（13）使得多晶硅膜的晶体生长方向基本上平行于扫描驱动TFT（12）和数据驱动器TFT（13）的电流路径的方向）。

8. 发明授权

US06599790B1 Laser-irradiation method and laser-irradiation device 失效
公开(公告)号：US06599790B1
公开(公告)日：2003-07-29
申请号：US08799202
申请日：1997-02-13
申请人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
发明人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
IPC分类号： H01L2100
CPC分类号： G10L17/22 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H04M3/2281 , H04M3/229 , H04M3/382 , H04M3/385 , H04M2201/40 , H04Q3/0016
摘要： A laser-irradiation method which comprises a process for fabricating a semiconductor device, comprising: a first step of forming a thin film amorphous semiconductor on a substrate having an insulating surface; a second step of modifying the thin film amorphous semiconductor into a crystalline thin film semiconductor by irradiating a pulse-type linear light and/or by applying a heat treatment; a third step of implanting an impurity element which imparts a one conductive type to the crystalline thin film semiconductor; and a fourth step of activating the impurity element by irradiating a pulse-type linear light and/or by applying a heat treatment; wherein the peak value, the peak width at half height, and the threshold width of the laser energy in the second and the fourth steps above are each distributed within a range of approximately ±3% of the standard value. Also claimed is a laser irradiation device which realizes the method above.

9. 发明授权

US06455359B1 Laser-irradiation method and laser-irradiation device 失效
标题翻译：激光照射方法和激光照射装置
公开(公告)号：US06455359B1
公开(公告)日：2002-09-24
申请号：US09298517
申请日：1999-04-22
申请人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
发明人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
IPC分类号： H01L2100
CPC分类号： H01L27/1285 , H01L27/1214 , H01L27/1296 , H01L29/66757 , H01L29/66765 , H01L29/78621
摘要： A laser-irradiation method which comprises a process for fabricating a semiconductor device, comprising: a first step of forming a thin film amorphous semiconductor on a substrate having an insulating surface; a second step of modifying the thin film amorphous semiconductor into a crystalline thin film semiconductor by irradiating a pulse-type linear light and/or by applying a heat treatment; a third step of implanting an impurity element which imparts a one conductive type to the crystalline thin film semiconductor; and a fourth step of activating the impurity element by irradiating a pulse-type linear light and/or by applying a heat treatment; wherein the peak value, the peak width at half height, and the threshold width of the laser energy in the second and the fourth steps above are each distributed within a range of approximately ±3% of the standard value. Also claimed is a laser irradiation device which realizes the method above.
摘要翻译：一种激光照射方法，包括制造半导体器件的工艺，包括：在具有绝缘表面的衬底上形成薄膜非晶半导体的第一步骤; 通过照射脉冲型线性光和/或通过施加热处理将薄膜非晶半导体改性成晶体薄膜半导体的第二步骤; 将赋予一种导电类型的杂质元素注入晶体薄膜半导体的第三步骤; 以及通过照射脉冲型线性光和/或通过施加热处理来激活杂质元素的第四步骤; 其中上述第二和第四步骤中的峰值，半高峰值宽度和激光能量的阈值宽度各自分布在标准值的约±3％的范围内。还要求保护的是实现上述方法的激光照射装置。

10. 发明授权

US6013544A Method for fabricating a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US6013544A
公开(公告)日：2000-01-11
申请号：US610227
申请日：1996-03-04
申请人： Naoki Makita , Tadayoshi Miyamoto , Tsukasa Shibuya
发明人： Naoki Makita , Tadayoshi Miyamoto , Tsukasa Shibuya
IPC分类号： H01L21/205 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/84 , H01L29/78 , H01L29/786
CPC分类号： H01L21/02532 , H01L21/02422 , H01L21/02672 , H01L21/02675 , H01L27/1277
摘要： A method for fabricating a semiconductor device including an active region obtained by utilizing a silicon semiconductor film having crystallinity which is formed on an insulating substrate is disclosed. A crystalline silicon semiconductor film is obtained by introducing catalyst elements for promoting the crystallization into a lower amorphous silicon semiconductor film and then performing a heat treatment onto the lower amorphous silicon semiconductor film. Thereafter, an upper amorphous silicon semiconductor film is formed on the obtained lower crystalline silicon semiconductor film, which is subsequently subjected to a heat treatment so as to obtain an upper crystalline silicon semiconductor film. Then, the upper crystalline silicon semiconductor film is removed. By this process, the catalyst elements remaining in the lower crystalline silicon semiconductor film moves into the upper crystalline silicon semiconductor film. As a result, a concentration of the catalyst elements in the lower crystalline silicon semiconductor film is reduced.
摘要翻译：公开了一种制造半导体器件的方法，该半导体器件包括通过利用形成在绝缘衬底上的具有结晶性的硅半导体膜而获得的有源区。通过将用于促进结晶的催化剂元素引入到下部非晶硅半导体膜中，然后对下部非晶硅半导体膜进行热处理，获得结晶硅半导体膜。此后，在所获得的下部结晶硅半导体膜上形成上部非晶硅半导体膜，随后对其进行热处理，以获得上部结晶硅半导体膜。然后，除去上部晶体硅半导体膜。通过该工艺，残留在下结晶硅半导体膜中的催化剂元素移动到上结晶硅半导体膜中。结果，下层结晶硅半导体膜中的催化剂元素的浓度降低。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式