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    • 6. 发明申请
    • SOLID STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 固态成像装置及其制造方法
    • US20090250728A1
    • 2009-10-08
    • US12416506
    • 2009-04-01
    • Ikuo MizunoTohru Yamada
    • Ikuo MizunoTohru Yamada
    • H01L27/148H01L21/28
    • H01L27/14818
    • A solid state imaging device has a plurality of photodetector parts 11 arranged in matrix, a plurality of vertical charge transfer electrodes 13 that read out signal charge from the photodetector parts and transfer the signal charge in the vertical direction, and a first light-shielding film 5 that shields the plural vertical charge transfer parts from incident light. Each of the vertical charge transfer electrodes includes: a transfer channel 12 provided along the vertical array of the plural photodetector parts, a plurality of first transfer electrodes 3a that are formed on the transfer channel so as to traverse the transfer channel and that is coupled in the horizontal direction in spacing between the photodetector parts; and second transfer electrodes 3b provided on the transfer channel and arranged between the first transfer electrodes. The first light-shielding film is formed continuously in the horizontal direction and has openings formed on the photodetector parts. Isolation regions having electroconductivity are formed between the photodetector parts and connected electrically to the second transfer electrode. Thereby, a shunt wiring structure capable of a high-speed transfer at a high sensitivity and with reduced smearing is obtained.
    • 固态成像装置具有多个以矩阵形式布置的光电检测器部分11,多个垂直电荷转移电极13,其从光电检测器部分读出信号电荷并在垂直方向上传送信号电荷;以及第一遮光膜 5从入射光屏蔽多个垂直电荷转移部分。 每个垂直电荷转移电极包括:沿着多个光电检测器部分的垂直阵列设置的传输通道12,多个第一传输电极3a,其形成在传送通道上,以穿过传输通道并耦合在 光电检测器部分之间的间隔的水平方向; 以及设置在传送通道上并布置在第一传输电极之间的第二传输电极3b。 第一遮光膜在水平方向上连续地形成并且在光电检测器部分上形成有开口。 在光检测器部分之间形成具有导电性的隔离区,并与第二转印电极电连接。 由此,可以获得能够以高灵敏度高速转印并且减少拖尾的并联布线结构。
    • 7. 发明授权
    • Solid-state imaging device
    • 固态成像装置
    • US07541631B2
    • 2009-06-02
    • US11854077
    • 2007-09-12
    • Tohru YamadaMichiyo IchikawaMamoru HonjoAtsuo Nakagawa
    • Tohru YamadaMichiyo IchikawaMamoru HonjoAtsuo Nakagawa
    • H01L31/062H01L31/113
    • H01L27/14837H01L27/14812
    • A solid-state imaging device including: a plurality of photodiode parts (1); a plurality of vertical charge transfer parts (2) each of which reads out a signal charge and transfers the signal charge in a vertical direction; and a plurality of shade films (5) that have conductivity, which supplies a transfer pulse via the shade film (5), is used. The vertical charge transfer parts (2) respectively have transfer channels (13) and transfer electrodes (3). The shade film (5) is formed above the corresponding vertical charge transfer part (2) via an insulation layer (21) that insulates the shade film (5) from the transfer electrodes (3). The insulation layer (21) has a thick part (8) in a part of the insulation layer (21) where the shade film (5) is overlapped on a side of the photodiode part (1) that is a subject to be read out by the vertical charge transfer part (2).
    • 一种固态成像装置,包括:多个光电二极管部分(1); 多个垂直电荷转移部分(2),每个垂直电荷转移部分(2)读出信号电荷并在垂直方向上传送信号电荷; 并且使用具有导电性的多个遮光膜(5),其通过遮光膜(5)提供转印脉冲。 垂直电荷转移部分(2)分别具有转移通道(13)和转移电极(3)。 遮光膜(5)通过使遮光膜(5)与转印电极(3)绝缘的绝缘层(21)形成在相应的垂直电荷转移部分(2)的上方。 绝缘层(21)在绝缘层(21)的一部分中具有厚度部分(8),其中遮光膜(5)重叠在作为待读取对象的光电二极管部分(1)的一侧 通过垂直电荷转移部分(2)。
    • 10. 发明授权
    • Charge coupled device image sensor and method of driving the same
    • 电荷耦合器件图像传感器及其驱动方法
    • US5895944A
    • 1999-04-20
    • US963928
    • 1997-11-04
    • Tohru Yamada
    • Tohru Yamada
    • H01L21/339H01L27/148H01L29/762H01L29/768
    • H01L27/14843H01L27/14812
    • There is provided an imager sensor including a semiconductor substrate, a plurality of photodiode regions arranged on the semiconductor substrate in row and column directions, a plurality of charge transfer regions each disposed at a space between the photodiode regions in the row direction, the charge transfer regions transferring in the row direction signal charges generated from the photodiode regions, and an electrically conductive photoshield film covering the charge transfer regions therewith. Each of the charge transfer regions includes at least three independent transfer electrodes per a photodiode region. At least one of the three independent transfer electrodes is surrounded by the photodiode region to thereby have an isolated island shape, the rest of the transfer electrodes extend through a space between the photodiode regions in the column direction, and make electrical connection with a bus line disposed outside the semiconductor substrate. The electrically conductive photoshield film makes electrical connection with both the island-shaped transfer electrodes and the bus line. The image sensor has the less number of steps and more excellent optical characteristics than conventional ones.
    • 提供一种成像传感器,其包括半导体衬底,在行和列方向上布置在半导体衬底上的多个光电二极管区域,多个电荷转移区域,各自设置在行方向上的光电二极管区域之间的空间,电荷转移 在行方向上传输信号的区域从光电二极管区域产生的电荷以及覆盖电荷转移区域的导电性遮光膜。 每个电荷转移区域每个光电二极管区域包括至少三个独立的转移电极。 三个独立转移电极中的至少一个被光电二极管区域包围,从而具有孤立的岛状,其余的转移电极在列方向上延伸穿过光电二极管区域之间的空间,并与总线电连接 设置在半导体衬底之外。 导电性遮光膜与岛状转印电极和总线线路电连接。 图像传感器具有比传统的更少的步数和更优异的光学特性。