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1. 发明授权

US07708542B2 Device for holding a template for use in imprint lithography 有权
标题翻译：用于保存用于压印光刻的模板的装置
公开(公告)号：US07708542B2
公开(公告)日：2010-05-04
申请号：US10747737
申请日：2003-12-29
申请人： Todd C. Bailey , Byung-Jin Choi , Matthew E. Colburn , Sidlgata V. Sreenivasan , Carlton G. Willson , John G. Ekerdt
发明人： Todd C. Bailey , Byung-Jin Choi , Matthew E. Colburn , Sidlgata V. Sreenivasan , Carlton G. Willson , John G. Ekerdt
IPC分类号： B29C59/02
CPC分类号： G11B5/855 , B29C35/0888 , B29C37/0053 , B29C43/003 , B29C2035/0827 , B29C2043/025 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/00 , Y10S977/887
摘要： Described are imprint lithography templates, methods of forming and using the templates, and a template holder device. An imprint lithography template may include a body with a plurality of recesses on a surface of the body. The body may be of a material that is substantially transparent to activating light. At least a portion of the plurality of recesses may define features having a feature size less than about 250 nm. A template may be formed by obtaining a material that is substantially transparent to activating light and forming a plurality or recesses on a surface of the template. In some embodiments, a template may further include at least one alignment mark. In some embodiments, a template may further include a gap sensing area. An imprint lithography template may be used to form an imprinted layer in a light curable liquid disposed on a substrate. During use, the template may be disposed within a template holder. The template holder may include a body with an opening configured to receive the template, a support plate, and at least one piezo actuator coupled to the body. The piezo actuator may be configured to alter a physical dimension of the template during use.
摘要翻译：描述了压印光刻模板，形成和使用模板的方法以及模板保持装置。压印光刻模板可以包括在主体的表面上具有多个凹部的主体。身体可以是对于激活光是基本上透明的材料。多个凹部的至少一部分可以限定具有小于约250nm的特征尺寸的特征。可以通过获得对于激活光而基本上透明并在模板的表面上形成多个或多个凹陷的材料来形成模板。在一些实施例中，模板还可以包括至少一个对准标记。在一些实施例中，模板还可以包括间隙感测区域。可以使用压印光刻模板来在设置在基板上的可光固化液体中形成印刷层。在使用期间，模板可以设置在模板保持器内。模板保持器可以包括具有构造成接收模板的开口的主体，支撑板和耦合到主体的至少一个压电致动器。压电致动器可以被配置为在使用期间改变模板的物理尺寸。

2. 发明申请

US20090214689A1 Imprint Lithography Templates Having Alignment Marks 审中-公开
标题翻译：印记平版印刷模板具有对齐标记
公开(公告)号：US20090214689A1
公开(公告)日：2009-08-27
申请号：US12437368
申请日：2009-05-07
申请人： Todd C. Bailey , Stephen C. Johnson , Matthew E. Colburn , Byung-Jin Choi , Britain J. Smith , Carlton G. Willson , Sidlgata V. Sreenivasan , John G. Ekerdt
发明人： Todd C. Bailey , Stephen C. Johnson , Matthew E. Colburn , Byung-Jin Choi , Britain J. Smith , Carlton G. Willson , Sidlgata V. Sreenivasan , John G. Ekerdt
IPC分类号： B29C59/16 , B44C1/22
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/00
摘要： One embodiment of the present invention is an imprint template for imprint lithography that comprises alignment marks embedded in bulk material of the imprint template.
摘要翻译：本发明的一个实施例是用于压印光刻的压印模板，其包括嵌入压印模板的散装材料中的对准标记。

3. 发明授权

US07229273B2 Imprint lithography template having a feature size under 250 nm 有权
标题翻译：特征尺寸在250nm以下的压印光刻模板
公开(公告)号：US07229273B2
公开(公告)日：2007-06-12
申请号：US10755997
申请日：2004-01-13
申请人： Todd C. Bailey , Byung-Jin Choi , Matthew E. Colburn , Sidlgata V. Sreenivasan , Carlton G. Willson , John G. Ekerdt
发明人： Todd C. Bailey , Byung-Jin Choi , Matthew E. Colburn , Sidlgata V. Sreenivasan , Carlton G. Willson , John G. Ekerdt
IPC分类号： B29C59/02
CPC分类号： G11B5/855 , B29C35/0888 , B29C37/0053 , B29C43/003 , B29C2035/0827 , B29C2043/025 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/00 , Y10S977/887
摘要： The present invention includes a template comprising a plurality of protrusions and a plurality of recessions with a distance between a zenith of any of the plurality of protrusions and a nadir of any one of the plurality of recessions being less than 250 nm.
摘要翻译：本发明包括一个模板，其包括多个突起和多个凹陷，多个凹陷之间的距离在多个突起中的任一个的顶点之间的距离和多个凹陷中的任一个的最低点之间小于250nm。

4. 发明授权

US08033814B2 Device for holding a template for use in imprint lithography 有权
标题翻译：用于保存用于压印光刻的模板的装置
公开(公告)号：US08033814B2
公开(公告)日：2011-10-11
申请号：US12715915
申请日：2010-03-02
申请人： Todd C. Bailey , Byung-Jin Choi , Matthew E. Colburn , Sidlgata V. Sreenivasan , Carlton Grant Willson , John G. Ekerdt
发明人： Todd C. Bailey , Byung-Jin Choi , Matthew E. Colburn , Sidlgata V. Sreenivasan , Carlton Grant Willson , John G. Ekerdt
IPC分类号： B29C59/02
CPC分类号： G11B5/855 , B29C35/0888 , B29C37/0053 , B29C43/003 , B29C2035/0827 , B29C2043/025 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/00 , Y10S977/887
摘要： An imprint lithography template may be used to form an imprinted layer in a light curable liquid disposed on a substrate. During use, the template may be disposed within a template holder. The template holder may include a body with an opening configured to receive the template, a support plate, and an actuator system coupled to the body. The actuator system may be configured to alter a physical dimension of the template during use.
摘要翻译：可以使用压印光刻模板来在设置在基板上的可光固化液体中形成印刷层。在使用期间，模板可以设置在模板保持器内。模板保持器可以包括具有构造成接收模板的开口的主体，支撑板和联接到主体的致动器系统。致动器系统可以被配置为在使用期间改变模板的物理尺寸。

5. 发明授权

US07186483B2 Method of determining alignment of a template and a substrate having a liquid disposed therebetween 有权
标题翻译：确定模板与其间具有液体的衬底的对准的方法
公开(公告)号：US07186483B2
公开(公告)日：2007-03-06
申请号：US10805916
申请日：2004-03-22
申请人： Sidlgata V. Sreenivasan , Byung-Jin Choi , Matthew E. Colburn , Todd C. Bailey
发明人： Sidlgata V. Sreenivasan , Byung-Jin Choi , Matthew E. Colburn , Todd C. Bailey
IPC分类号： G03C5/00 , G03F9/00
CPC分类号： B29C35/0888 , B29C37/0053 , B29C43/003 , B29C43/021 , B29C2035/0827 , B29C2043/025 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/00 , Y10S101/36 , Y10T428/24802
摘要： The present invention includes a method of aligning a substrate and a template spaced-apart from the substrate with an activating light curable liquid disposed therebetween, the substrate having substrate alignment marks and the template having template alignment marks, the method including, reducing a distance between the substrate and the template to cause a spreading of the activating light curable liquid; and varying an overlay placement of the template with respect to the substrate such that the template alignment marks are substantially aligned with the substrate alignment marks before the spreading causes the activating light curable liquid to cover an area between the substrate alignment marks and the template alignment marks.
摘要翻译：本发明包括一种将衬底和与衬底间隔开的模板与其间设置的活化光可固化液体对准的方法，所述衬底具有衬底对准标记，并且模板具有模板对准标记，该方法包括，基板和模板，以引起活化光可固化液体的扩散; 并且改变模板相对于基板的覆盖布局，使得模板对准标记在扩展之前基本对准基板对准标记，使得激活光可固化液体覆盖基板对准标记和模板对准标记之间的区域。

6. 发明授权

US07303383B1 Imprint lithography system to produce light to impinge upon and polymerize a liquid in superimposition with template overlay marks 有权
标题翻译：压印光刻系统产生光以与模板覆盖标记叠加并聚合液体
公开(公告)号：US07303383B1
公开(公告)日：2007-12-04
申请号：US10864214
申请日：2004-06-09
申请人： Sidlgata V. Sreenivasan , Byung-Jin Choi , Matthew E. Colburn , Todd C. Bailey
发明人： Sidlgata V. Sreenivasan , Byung-Jin Choi , Matthew E. Colburn , Todd C. Bailey
IPC分类号： B29C35/08 , G03C5/00
CPC分类号： B29C35/0888 , B29C37/0053 , B29C43/003 , B29C43/021 , B29C2035/0827 , B29C2043/025 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/00 , Y10S101/36 , Y10T428/24802
摘要： The present invention includes an imprint lithography system for impinging a flux of light upon a liquid to polymerize the liquid, the system including, a source of light producing the flux of light; and a template having overlay marks being disposed between the liquid and the source of light and being opaque to the flux of light, with a pitch of the overlay marks establishing a polarization of the flux of light such that the flux of light impinges upon and polymerizes the liquid in superimposition with the overlay marks.
摘要翻译：本发明包括一种用于将光束照射在液体上以使液体聚合的压印光刻系统，该系统包括产生光通量的光源; 并且具有覆盖标记的模板设置在液体和光源之间，并且对于光通量不透明，叠加标记的间距建立光通量的偏振，使得光束流入并聚合液体与叠加标记叠加。

7. 发明授权

US08901741B2 Interconnect structures with engineered dielectrics with nanocolumnar porosity 有权
标题翻译：互连结构与具有纳米柱孔隙度的工程电介质
公开(公告)号：US08901741B2
公开(公告)日：2014-12-02
申请号：US13531518
申请日：2012-06-23
申请人： Matthew E. Colburn , Satya V. Nitta , Sampath Purushothaman , Charles Black , Kathryn Guarini
发明人： Matthew E. Colburn , Satya V. Nitta , Sampath Purushothaman , Charles Black , Kathryn Guarini
IPC分类号： H01L23/522 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31144 , H01L21/7682 , H01L2924/0002 , H01L2924/00
摘要： A method for forming an interconnect structure with nanocolumnar intermetal dielectric is described involving the construction of an interconnect structure using a solid dielectric, and introducing a regular array of vertically aligned nanoscale pores through stencil formation and etching to form a hole array and subsequently pinching off the tops of the hole array with a cap dielectric. Variations of the method and means to construct a multilevel nanocolumnar interconnect structure are also described.
摘要翻译：描述了一种形成具有纳米柱状金属间电介质的互连结构的方法，涉及使用固体电介质构造互连结构，并通过模板形成和蚀刻引入垂直排列的纳米尺度孔的规则阵列以形成孔阵列并随后夹紧具有盖电介质的孔阵列的顶部。还描述了构建多层纳米柱状互连结构的方法和方法的变化。

8. 发明授权

US08361704B2 Method for reducing tip-to-tip spacing between lines 有权
标题翻译：减少线间距尖端间距的方法
公开(公告)号：US08361704B2
公开(公告)日：2013-01-29
申请号：US12352051
申请日：2009-01-12
申请人： Matthew E. Colburn , Wai-kin Li , Haining S. Yang
发明人： Matthew E. Colburn , Wai-kin Li , Haining S. Yang
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/0337 , H01L21/0338 , H01L21/32139
摘要： This invention provides a method for reducing tip-to-tip spacing between lines using a combination of photolithographic and copolymer self-assembling lithographic techniques. A mask layer is first formed over a substrate with a line structure. A trench opening of a width d is created in the mask layer. A layer of a self-assembling block copolymer is then applied over the mask layer. The block copolymer layer is annealed to form a single unit polymer block of a width or a diameter w which is smaller than d inside the trench opening. The single unit polymer block is selectively removed to form a single opening of a width or a diameter w inside the trench opening. An etch transfer process is performed using the single opening as a mask to form an opening in the line structure in the substrate.
摘要翻译：本发明提供了使用光刻和共聚物自组装光刻技术的组合来减少线之间的尖端到尖端间隔的方法。首先在具有线结构的衬底上形成掩模层。在掩模层中形成宽度为d的沟槽开口。然后将一层自组装嵌段共聚物施加在掩模层上。对嵌段共聚物层进行退火以在沟槽开口内形成宽度或直径w小于d的单一单元聚合物嵌段。选择性地去除单个单元聚合物嵌段以在沟槽开口内形成宽度或直径w的单个开口。使用单个开口作为掩模进行蚀刻转印处理，以在基板中的线结构中形成开口。

9. 发明授权

US08137893B2 Chemical trim of photoresist lines by means of a tuned overcoat 有权
标题翻译：通过调整的外涂层对光致抗蚀剂线进行化学修饰
公开(公告)号：US08137893B2
公开(公告)日：2012-03-20
申请号：US12983297
申请日：2011-01-01
申请人： Sean David Burns , Matthew E. Colburn , Steven John Holmes , Wu-Song Huang
发明人： Sean David Burns , Matthew E. Colburn , Steven John Holmes , Wu-Song Huang
IPC分类号： G03F7/00 , G03F7/004 , G03F7/40
CPC分类号： G03F7/40 , Y10T428/24802
摘要： A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process.
摘要翻译：新的光刻工艺包括在保持光刻工艺窗口的同时降低图像的线宽，并且使用该工艺来制造包括nm阶（例如约22nm）的节点半导体器件的间距分裂结构。该方法包括在基片的表面上施加平版印刷抗蚀剂层，并对平版印刷抗蚀剂层进行图形化和显影，以形成具有初始线宽的nm阶节点图像。用酸性聚合物覆盖nm阶节点图像产生酸性聚合物涂层图像。加热酸性聚合物涂覆的图像给图像上的热处理涂层，加热在足以将初始线宽降低到随后变窄的线宽的温度和时间内进行。显影加热处理的涂层将其从图像中去除，从而在基底上产生独立的修整光刻特征。可选地，重复前述步骤进一步减小了变窄线的线宽。本发明还包括通过该方法生产的产品。

10. 发明授权

US08129286B2 Reducing effective dielectric constant in semiconductor devices 有权
标题翻译：降低半导体器件中的有效介电常数
公开(公告)号：US08129286B2
公开(公告)日：2012-03-06
申请号：US12139803
申请日：2008-06-16
申请人： Daniel C. Edelstein , Matthew E. Colburn , Edward C. Cooney, III , Timothy J. Dalton , John A. Fitzsimmons , Jeffrey P. Gambino , Elbert E. Huang , Michael W. Lane , Vincent J. McGahay , Lee M. Nicholson , Satyanarayana V. Nitta , Sampath Purushothaman , Sujatha Sankaran , Thomas M. Shaw , Andrew H. Simon , Anthony K. Stamper
发明人： Daniel C. Edelstein , Matthew E. Colburn , Edward C. Cooney, III , Timothy J. Dalton , John A. Fitzsimmons , Jeffrey P. Gambino , Elbert E. Huang , Michael W. Lane , Vincent J. McGahay , Lee M. Nicholson , Satyanarayana V. Nitta , Sampath Purushothaman , Sujatha Sankaran , Thomas M. Shaw , Andrew H. Simon , Anthony K. Stamper
IPC分类号： H01L21/302 , B44C1/22
CPC分类号： B82Y30/00 , H01L21/0332 , H01L21/31111 , H01L21/31144 , H01L21/7682 , H01L21/76829 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , Y10S438/947 , H01L2924/00
摘要： Method of manufacturing a semiconductor device structure, including the steps of providing a structure having an insulator layer with at least one interconnect, forming a sub lithographic template mask over the insulator layer, and selectively etching the insulator layer through the sub lithographic template mask to form sub lithographic features spanning to a sidewall of the at least one interconnect.
摘要翻译：制造半导体器件结构的方法，包括以下步骤：提供具有至少一个互连的绝缘体层的结构，在该绝缘体层上形成次级光刻模板掩模，以及通过次级光刻模板掩模选择性地蚀刻绝缘体层以形成亚光刻特征跨越至少一个互连的侧壁。

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