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1. 发明申请

US20070010091A1 METHOD FOR PERFORMING CHEMICAL SHRINK PROCESS OVER BARC (BOTTOM ANTI-REFLECTIVE COATING) 失效
标题翻译：用于在BARC（底部防反射涂层）上进行化学收缩过程的方法
公开(公告)号：US20070010091A1
公开(公告)日：2007-01-11
申请号：US11160670
申请日：2005-07-05
申请人： Todd Bailey , Colin Brodsky , Allen Gabor
发明人： Todd Bailey , Colin Brodsky , Allen Gabor
IPC分类号： H01L21/4763
CPC分类号： H01L21/76802 , H01L21/0273 , H01L21/31144 , H01L21/76816 , Y10T428/24322 , Y10T428/24331 , Y10T428/24521 , Y10T428/249953
摘要： A structure and a method for forming the same. The method comprises providing a structure including (a) a hole layer, (b) a BARC (bottom antireflective coating) layer on the top of the hole layer, and (c) a patterned photoresist layer on top of the BARC layer and having a photoresist hole; etching the BARC layer through the photoresist hole to extend the photoresist hole to the hole layer; performing the chemical shrinking process to shrink the extended photoresist hole; and etching the hole layer through the shrunk, extended photoresist hole so as to form a hole in the hole layer.
摘要翻译：一种结构及其形成方法。该方法包括提供一种结构，其包括（a）空穴层，（b）在空穴层顶部的BARC（底部抗反射涂层）层，和（c）在BARC层的顶部上的图案化光致抗蚀剂层，光致抗蚀剂孔; 通过光致抗蚀剂孔蚀刻BARC层以将光致抗蚀剂孔延伸到孔层; 执行化学收缩过程以收缩延伸的光致抗蚀剂孔; 并且通过收缩的延伸的光致抗蚀剂孔蚀刻孔层，以在孔层中形成孔。

2. 发明申请

US20080020198A1 METHOD FOR PERFORMING CHEMICAL SHRINK PROCESS OVER BARC (BOTTOM ANTI-REFLECTIVE COATING) 有权
标题翻译：用于在BARC（底部防反射涂层）上进行化学收缩过程的方法
公开(公告)号：US20080020198A1
公开(公告)日：2008-01-24
申请号：US11831137
申请日：2007-07-31
申请人： Todd Bailey , Colin Brodsky , Allen Gabor
发明人： Todd Bailey , Colin Brodsky , Allen Gabor
IPC分类号： B32B3/26 , B05D5/12 , C23F1/00
CPC分类号： H01L21/76802 , H01L21/0273 , H01L21/31144 , H01L21/76816 , Y10T428/24322 , Y10T428/24331 , Y10T428/24521 , Y10T428/249953
摘要： A structure and a method for forming the same. The method comprises providing a structure including (a) a hole layer, (b) a BARC (bottom antireflective coating) layer on the top of the hole layer, and (c) a patterned photoresist layer on top of the BARC layer and having a photoresist hole; etching the BARC layer through the photoresist hole to extend the photoresist hole to the hole layer; performing the chemical shrinking process to shrink the extended photoresist hole; and etching the hole layer through the shrunk, extended photoresist hole so as to form a hole in the hole layer.
摘要翻译：一种结构及其形成方法。该方法包括提供一种结构，其包括（a）空穴层，（b）在空穴层顶部的BARC（底部抗反射涂层）层，和（c）在BARC层的顶部上的图案化光致抗蚀剂层，光致抗蚀剂孔; 通过光致抗蚀剂孔蚀刻BARC层以将光致抗蚀剂孔延伸到孔层; 执行化学收缩过程以收缩延伸的光致抗蚀剂孔; 并且通过收缩的延伸的光致抗蚀剂孔蚀刻孔层，以在孔层中形成孔。

3. 发明申请

US20070249070A1 TOPOGRAPHY COMPENSATED FILM APPLICATION METHODS 有权
标题翻译：地形补偿膜应用方法
公开(公告)号：US20070249070A1
公开(公告)日：2007-10-25
申请号：US11276707
申请日：2006-03-10
申请人： Colin Brodsky , Scott Bukofsky , Allen Gabor
发明人： Colin Brodsky , Scott Bukofsky , Allen Gabor
IPC分类号： H01L21/66 , H01L21/31
CPC分类号： H01L21/0271 , H01L21/0276
摘要： Methods for applying topographically compensated film in a semiconductor wafer fabrication process are disclosed. The processes include premapping a surface of a wafer so as to determine the local topography (e.g., z-height) of the wafer and then applying a variable depth of a film to the wafer, such that the variable depth is modulated based on the local topography of the wafer. The resultant topography of the applied film and wafer is substantially planar (e.g., within approximately 100 nm) across the wafer.
摘要翻译：公开了在半导体晶片制造工艺中应用地形学补偿膜的方法。这些过程包括预先处理晶片的表面，以便确定晶片的局部形貌（例如，z-高度），然后将薄膜的可变深度施加到晶片，使得可变深度基于本地晶圆的形貌。所施加的膜和晶片的所得形貌在晶片上基本上是平面的（例如在大约100nm内）。

4. 发明申请

US20060003153A1 Film stack having under layer for preventing pinhole defects 有权
标题翻译：薄膜叠层具有防止针孔缺陷的底层
公开(公告)号：US20060003153A1
公开(公告)日：2006-01-05
申请号：US10880818
申请日：2004-06-30
申请人： Colin Brodsky , Wai-Kin Li , Steven Scheer
发明人： Colin Brodsky , Wai-Kin Li , Steven Scheer
IPC分类号： B32B7/02 , B32B27/00
CPC分类号： B32B27/00 , Y10T428/24942 , Y10T428/2495 , Y10T428/265 , Y10T428/31504 , Y10T428/3154 , Y10T428/31544 , Y10T428/31855
摘要： A film stack and method of forming a film stack are provided in which a first film is disposed on a substrate and a second film has an inner surface disposed on the first film. The second film has a thickness smaller than a reference thickness at which the second film would begin to dewet from the substrate if the second film were disposed directly on the substrate. However, the second film is substantially free of dewetting defects because it is disposed overlying the first film which has a first Hamaker constant having a negative value with respect to the substrate.
摘要翻译：提供了一种薄膜叠层和形成薄膜叠层的方法，其中第一薄膜设置在基底上，第二薄膜具有设置在第一薄膜上的内表面。如果第二膜直接设置在基板上，则第二膜的厚度小于第二膜从基板开始露出的基准厚度。然而，第二膜基本上没有脱湿缺陷，因为它被布置在第一膜上，该第一膜具有相对于基底具有负值的第一Hamaker常数。

5. 发明授权

US07917309B2 System and method for detection and prevention of influx of airborne contaminants 失效
标题翻译：用于检测和防止空气污染物流入的系统和方法
公开(公告)号：US07917309B2
公开(公告)日：2011-03-29
申请号：US11954127
申请日：2007-12-11
申请人： Colin Brodsky
发明人： Colin Brodsky
IPC分类号： G01N31/00 , B60H1/00
CPC分类号： G01N33/0031 , B60H1/008 , B60H3/0085
摘要： An apparatus and method for detection of airborne contaminants and prevention of influx of the contaminants into an enclosed space, such as a vehicle cabin. A first sensor array samples exterior air prior to influx of the exterior air into the enclosed space. The first sensor array generates data uniquely corresponding to each contaminant. Data corresponding to predetermined contaminants is stored in computer memory. A user may also cause data corresponding to a contaminant selected by the user to be stored in the computer memory. Upon identification of a contaminant, an actuator is operative to control a position of a valve to prevent influx of the exterior air into the enclosed space.
摘要翻译：一种用于检测空气污染物并防止污染物进入封闭空间（例如车厢）的装置和方法。第一传感器阵列在外部空气流入封闭空间之前对外部空气进行取样。第一传感器阵列产生与每个污染物唯一对应的数据。与预定污染物相对应的数据被存储在计算机存储器中。用户还可以将与用户选择的污染物相对应的数据存储在计算机存储器中。在识别污染物时，致动器可操作以控制阀的位置，以防止外部空气流入封闭空间。

6. 发明申请

US20070243333A1 Method of forming film stack having under layer for preventing pinhole defects 有权
标题翻译：形成具有下层以防止针孔缺陷的薄膜叠层的方法
公开(公告)号：US20070243333A1
公开(公告)日：2007-10-18
申请号：US11820302
申请日：2007-06-18
申请人： Colin Brodsky , Wai-Kin Li , Steven Scheer
发明人： Colin Brodsky , Wai-Kin Li , Steven Scheer
IPC分类号： B05D1/36
CPC分类号： B32B27/00 , Y10T428/24942 , Y10T428/2495 , Y10T428/265 , Y10T428/31504 , Y10T428/3154 , Y10T428/31544 , Y10T428/31855
摘要： A method is provided for forming a film stack in which a first film including a first polymer is formed on a substrate. A second film, which can include a second polymer other than the first polymer, is formed to have an inner surface disposed on the first film. The second film can have a thickness at which a free energy of the second film would be negative if the second film were disposed directly on the substrate. Desirably, the resulting second film is substantially free of dewetting defects.
摘要翻译：提供了一种用于形成膜叠层的方法，其中在基板上形成包括第一聚合物的第一膜。可以包括第一聚合物以外的第二聚合物的第二膜形成为具有设置在第一膜上的内表面。如果第二膜直接设置在基板上，则第二膜可以具有第二膜的自由能为负的厚度。理想地，所得到的第二膜基本上没有脱湿缺陷。

7. 发明申请

US20060160037A1 AUTOMATED SUB-FIELD BLADING FOR LEVELING OPTIMIZATION IN LITHOGRAPHY EXPOSURE TOOL 审中-公开
标题翻译：自动化的子场开采用于平面曝光工具中的优化优化
公开(公告)号：US20060160037A1
公开(公告)日：2006-07-20
申请号：US10905706
申请日：2005-01-18
申请人： Colin Brodsky , Scott Bukofsky , Steven Holmes
发明人： Colin Brodsky , Scott Bukofsky , Steven Holmes
IPC分类号： G03F7/20
CPC分类号： G03F7/70466
摘要： A method of exposing images on a wafer having varying topography during lithographic production of microelectronic devices. The method initially includes determining topography of a wafer, dividing the wafer into two or more separate regions based on the wafer topography, and determining desired focus distance for exposing a desired image on each of the separate regions of the wafer. The method then includes exposing a desired image on one of the regions of the wafer at the desired focus distance while blocking remaining regions and exposing a desired image on another of the regions of the wafer at the desired focus distance while blocking remaining regions. The desired focus distance may be different for each of the separate wafer regions.
摘要翻译：一种在微电子器件的光刻生产期间在具有变化的形貌的晶片上曝光图像的方法。该方法最初包括确定晶片的形貌，基于晶片形貌将晶片分成两个或更多个分离的区域，以及确定用于在晶片的每个分离区域上曝光所需图像的期望焦距。该方法然后包括以期望的聚焦距离在晶片的一个区域上曝光期望的图像，同时阻挡剩余的区域并且以期望的焦距在所需的聚焦距离的另一个区域上曝光期望的图像，同时阻挡剩余的区域。对于每个单独的晶片区域，期望的对焦距离可以是不同的。

8. 发明申请

US20080033675A1 METHOD OF INSPECTING INTEGRATED CIRCUITS DURING FABRICATION 有权
标题翻译：在制造过程中检查集成电路的方法
公开(公告)号：US20080033675A1
公开(公告)日：2008-02-07
申请号：US11872060
申请日：2007-10-15
申请人： Colin Brodsky , MaryJane Brodsky
发明人： Colin Brodsky , MaryJane Brodsky
IPC分类号： G06F19/00
CPC分类号： H01L22/20
摘要： A method, system and a computer program product for inspecting integrated circuit chips during fabrication. The method including: selecting an integrated circuit chip at a selected level of fabrication; determining coordinates of potential failures of the integrated circuit chip based on one or more risk of failure analyses performed ancillary to fabrication of the integrated circuit chip; automatically generating one or more enhanced defect inspection regions for inspecting the integrated circuit chip based on the coordinates; automatically selecting one or more enhanced defect inspection parameters for each of the enhanced defect inspection regions based on the one or more risk of failure analyses; and generating an enhanced defect inspection recipe, the enhanced defect inspection recipe including a location on the integrated circuit chip, an enhanced defect inspection parameter and a value for the enhanced defect inspection parameter for each of the one or more enhanced defect inspection regions.
摘要翻译：一种用于在制造期间检查集成电路芯片的方法，系统和计算机程序产品。该方法包括：以选定的制造水平选择集成电路芯片; 基于集成电路芯片的制造辅助执行的一个或多个故障分析风险来确定集成电路芯片的潜在故障的坐标; 自动生成一个或多个增强的缺陷检查区域，用于基于坐标检查集成电路芯片; 基于一个或多个故障分析的风险，自动地为每个增强缺陷检查区域选择一个或多个增强的缺陷检查参数; 并且生成增强的缺陷检查配方，所述增强缺陷检查配方包括集成电路芯片上的位置，增强的缺陷检查参数和用于所述一个或多个增强缺陷检查区域中的每一个的增强的缺陷检查参数的值。

9. 发明申请

US20070259162A1 Film stack having under layer for preventing pinhole defects 失效
标题翻译：薄膜叠层具有防止针孔缺陷的底层
公开(公告)号：US20070259162A1
公开(公告)日：2007-11-08
申请号：US11827014
申请日：2007-07-10
申请人： Colin Brodsky , Wai-Kin Li , Steven Scheer
发明人： Colin Brodsky , Wai-Kin Li , Steven Scheer
IPC分类号： B32B7/02
CPC分类号： B32B27/00 , Y10T428/24942 , Y10T428/2495 , Y10T428/265 , Y10T428/31504 , Y10T428/3154 , Y10T428/31544 , Y10T428/31855
摘要： A film stack is provided in which a first film including a first polymer directly contacts a surface of a substrate at which a given material is exposed. A second film, which can include a second polymer other than the first polymer, is formed to have an inner surface contacting the first film. The second film can have a thickness at which a free energy of the second film would be negative if the second film were disposed directly on the substrate. Desirably, the resulting second film is substantially free of dewetting defects.
摘要翻译：提供了一种膜叠层，其中包括第一聚合物的第一膜直接接触暴露给定材料的基板的表面。可以包括第一聚合物以外的第二聚合物的第二膜被形成为具有与第一膜接触的内表面。如果第二膜直接设置在基板上，则第二膜可以具有第二膜的自由能为负的厚度。理想地，所得到的第二膜基本上没有脱湿缺陷。

10. 发明申请

US20070085991A1 DENSITY-AWARE DYNAMIC LEVELING IN SCANNING EXPOSURE SYSTEMS 失效
标题翻译：在扫描曝光系统中的密度动态水平
公开(公告)号：US20070085991A1
公开(公告)日：2007-04-19
申请号：US11163409
申请日：2005-10-18
申请人： Bernhard Liegl , Colin Brodsky , Scott Bukofsky , Steven Holmes
发明人： Bernhard Liegl , Colin Brodsky , Scott Bukofsky , Steven Holmes
IPC分类号： G03B27/52
CPC分类号： G03F9/7034 , G03F9/7026
摘要： A method and apparatus are provided for improving the leveling and, consequently, the focusing of a substrate such as a wafer during the photolithography imaging procedure of a semiconductor manufacturing process. The invention performs a pre-scan of the wafer's topography and assigns importance values to different regions of the wafer surface. Exposure focus instructions are calculated based on the topography and importance values of the different regions and the wafer is then scanned and imaged based on the calculated exposure focus instructions.
摘要翻译：提供了一种方法和装置，用于在半导体制造工艺的光刻成像过程期间改进调平，并因此改善诸如晶片的基板的聚焦。本发明对晶片的形貌进行预扫描，并将重要性值分配给晶片表面的不同区域。基于不同区域的形貌和重要度值计算曝光焦点指令，然后基于计算出的曝光聚焦指令对晶片进行扫描和成像。

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