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1. 发明申请

US20120282762A1 Method For Forming Gallium Nitride Semiconductor Device With Improved Forward Conduction 有权
标题翻译：用于形成具有改进的正向传导的氮化镓半导体器件的方法
公开(公告)号：US20120282762A1
公开(公告)日：2012-11-08
申请号：US13553237
申请日：2012-07-19
申请人： TingGang Zhu
发明人： TingGang Zhu
IPC分类号： H01L21/329 , H01L21/20
CPC分类号： H01L29/2003 , H01L29/0692 , H01L29/417 , H01L29/872
摘要： A method for forming a gallium nitride based semiconductor diode includes forming Schottky contacts on the upper surface of mesas formed in a semiconductor body formed on a substrate. Ohmic contacts are formed on the lower surface of the semiconductor body. In one embodiment, an insulating layer is formed over the Schottky and ohmic contacts and vias are formed in the insulating layer to the Schottky and ohmic contacts to form the anode and cathode electrodes. In another embodiment, vias are formed in the insulating layer to the Schottky contacts and vias are formed in the semiconductor body to the ohmic contacts. An anode electrode is formed in electrical contact with the Schottky contacts. A cathode electrode is formed in electrical contact with the ohmic contacts on the backside of the substrate.
摘要翻译：形成氮化镓基半导体二极管的方法包括在形成在基板上的半导体本体中形成的台面的上表面上形成肖特基触点。在半导体本体的下表面上形成欧姆接触。在一个实施例中，在肖特基和欧姆接触之上形成绝缘层，并且在绝缘层中形成通孔至肖特基和欧姆接触以形成阳极和阴极电极。在另一个实施例中，在绝缘层中形成通孔至肖特基接触，并且在半导体本体中形成通孔至欧姆接触。形成与肖特基接触电接触的阳极电极。阴极电极形成为与衬底背面上的欧姆接触电接触。

2. 发明申请

US20110278589A1 Gallium Nitride Semiconductor Device With Improved Forward Conduction 有权
标题翻译：具有改进的正向传导的氮化镓半导体器件
公开(公告)号：US20110278589A1
公开(公告)日：2011-11-17
申请号：US13191325
申请日：2011-07-26
申请人： TingGang Zhu
发明人： TingGang Zhu
IPC分类号： H01L29/872
CPC分类号： H01L29/2003 , H01L29/0692 , H01L29/417 , H01L29/872
摘要： A gallium nitride based semiconductor diode includes a substrate, a semiconductor body including a first heavily doped GaN layer and a second lightly doped GaN layer. The semiconductor body includes mesas projecting upwardly from a lower surface where each of the mesas includes the second GaN layer and a portion of the first GaN layer. Schottky contacts are formed on the upper surface of the mesas and ohmic contacts are formed on the lower surface of the semiconductor body. An insulating layer is formed over the Schottky and ohmic contacts. Vias are formed in the insulating layer to the Schottky contacts and vias are formed in the semiconductor body to the Ohmic contacts. An anode electrode is formed in a first metal pad in electrical contact with the Schottky contacts. A cathode electrode is formed in a second metal pad in electrical contact with the ohmic contacts.
摘要翻译：氮化镓基半导体二极管包括衬底，包括第一重掺杂GaN层和第二轻掺杂GaN层的半导体本体。半导体主体包括从下表面向上突出的台面，其中每个台面包括第二GaN层和第一GaN层的一部分。在台面的上表面上形成肖特基接触，并且在半导体本体的下表面上形成欧姆接触。绝缘层形成在肖特基和欧姆接触之上。在绝缘层中形成有与肖特基触点相对的通孔，并且在半导体本体中形成通孔至欧姆接触。阳极电极形成在与肖特基接触件电接触的第一金属焊盘中。阴极电极形成在与欧姆接触件电接触的第二金属焊盘中。

3. 发明授权

US08013414B2 Gallium nitride semiconductor device with improved forward conduction 有权
标题翻译：具有改善的正向传导的氮化镓半导体器件
公开(公告)号：US08013414B2
公开(公告)日：2011-09-06
申请号：US12388402
申请日：2009-02-18
申请人： TingGang Zhu
发明人： TingGang Zhu
IPC分类号： H01L27/095 , H01L29/47
CPC分类号： H01L29/2003 , H01L29/0692 , H01L29/417 , H01L29/872
摘要： A gallium nitride based semiconductor diode includes a substrate, a semiconductor body including a first heavily doped GaN layer and a second lightly doped GaN layer. The semiconductor body includes mesas projecting upwardly from a lower surface where each of the mesas includes the second GaN layer and a portion of the first GaN layer. Schottky contacts are formed on the upper surface of the mesas and ohmic contacts are formed on the lower surface of the semiconductor body. An insulating layer is formed over the Schottky and ohmic contacts and vias are formed in the insulating layer to the Schottky and Ohmic contacts. An anode electrode is formed in a first metal pad in electrical contact with the Schottky contacts. A cathode electrode is formed in a second metal pad in electrical contact with the ohmic contacts.
摘要翻译：氮化镓基半导体二极管包括衬底，包括第一重掺杂GaN层和第二轻掺杂GaN层的半导体本体。半导体主体包括从下表面向上突出的台面，其中每个台面包括第二GaN层和第一GaN层的一部分。在台面的上表面上形成肖特基接触，并且在半导体本体的下表面上形成欧姆接触。在肖特基和欧姆接触之上形成绝缘层，并且在绝缘层中形成通孔至肖特基和欧姆接触。阳极电极形成在与肖特基接触件电接触的第一金属焊盘中。阴极电极形成在与欧姆接触件电接触的第二金属焊盘中。

4. 发明申请

US20090035925A1 Gallium Nitride Semiconductor Device 有权
标题翻译：氮化镓半导体器件
公开(公告)号：US20090035925A1
公开(公告)日：2009-02-05
申请号：US12249099
申请日：2008-10-10
申请人： TingGang Zhu , Bryan S. Shelton , Marek K. Pabisz , Mark Gottfried , Linlin Liu , Milan Pophristic , Michael Murphy , Richard A. Stall
发明人： TingGang Zhu , Bryan S. Shelton , Marek K. Pabisz , Mark Gottfried , Linlin Liu , Milan Pophristic , Michael Murphy , Richard A. Stall
IPC分类号： H01L21/425
CPC分类号： H01L29/872 , H01L29/2003 , H01L29/475
摘要： A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.
摘要翻译：由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层，其厚度介于1微米与6微米之间，设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。优化了层厚度和细长指状物的长度和宽度，以实现具有大于500伏特的击穿电压，超过1安培的电流容量和小于3伏特的正向电压的器件。

5. 发明申请

US20130119393A1 Vertical Gallium Nitride Schottky Diode 有权
标题翻译：立式氮化镓肖特基二极管
公开(公告)号：US20130119393A1
公开(公告)日：2013-05-16
申请号：US13294903
申请日：2011-11-11
申请人： TingGang Zhu , Anup Bhalla , Ping Huang , Yueh-se Ho
发明人： TingGang Zhu , Anup Bhalla , Ping Huang , Yueh-se Ho
IPC分类号： H01L29/20 , H01L29/06 , H01L21/20
CPC分类号： H01L29/872 , H01L21/0217 , H01L21/0254 , H01L21/28581 , H01L21/30612 , H01L21/31111 , H01L21/56 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L25/18 , H01L27/0248 , H01L27/0814 , H01L29/0619 , H01L29/0688 , H01L29/2003 , H01L29/402 , H01L29/405 , H01L29/417 , H01L29/66136 , H01L29/66143 , H01L29/66212 , H01L29/861 , H01L29/8611 , H01L2224/0401 , H01L2224/04042 , H01L2224/05016 , H01L2224/05567 , H01L2224/11616 , H01L2224/13017 , H01L2224/13021 , H01L2224/13022 , H01L2924/00014 , H01L2924/1033 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/00012 , H01L2924/00 , H01L2224/05552
摘要： A vertical conduction nitride-based Schottky diode is formed using an insulating substrate which was lifted off after the diode device is encapsulated on the front side with a wafer level molding compound. The wafer level molding compound provides structural support on the front side of the diode device to allow the insulating substrate to be lifted off so that a conductive layer can be formed on the backside of the diode device as the cathode electrode. A vertical conduction nitride-based Schottky diode is thus realized. In another embodiment, a protection circuit for a vertical GaN Schottky diode employs a silicon-based vertical PN junction diode connected in parallel to the GaN Schottky diode to divert reverse bias avalanche current.
摘要翻译：使用绝缘基板形成垂直导电氮化物基肖特基二极管，绝缘基板在二极管器件用晶片级模塑料封装在前侧之后被提起。晶片级成型复合体在二极管器件的前侧提供结构支撑，以允许绝缘基板被提起，使得可以在作为阴极的二极管器件的背面上形成导电层。因此实现了基于垂直导电氮化物的肖特基二极管。在另一个实施例中，用于垂直GaN肖特基二极管的保护电路采用与GaN肖特基二极管并联连接的硅基垂直PN结二极管，以转移反向偏置雪崩电流。

6. 发明授权

US08383499B2 Method for forming gallium nitride semiconductor device with improved forward conduction 有权
标题翻译：用于形成具有改善的正向传导的氮化镓半导体器件的方法
公开(公告)号：US08383499B2
公开(公告)日：2013-02-26
申请号：US13553237
申请日：2012-07-19
申请人： TingGang Zhu
发明人： TingGang Zhu
IPC分类号： H01L21/28 , H01L21/44
CPC分类号： H01L29/2003 , H01L29/0692 , H01L29/417 , H01L29/872
摘要： A method for forming a gallium nitride based semiconductor diode includes forming Schottky contacts on the upper surface of mesas formed in a semiconductor body formed on a substrate. Ohmic contacts are formed on the lower surface of the semiconductor body. In one embodiment, an insulating layer is formed over the Schottky and ohmic contacts and vias are formed in the insulating layer to the Schottky and ohmic contacts to form the anode and cathode electrodes. In another embodiment, vias are formed in the insulating layer to the Schottky contacts and vias are formed in the semiconductor body to the ohmic contacts. An anode electrode is formed in electrical contact with the Schottky contacts. A cathode electrode is formed in electrical contact with the ohmic contacts on the backside of the substrate.
摘要翻译：形成氮化镓基半导体二极管的方法包括在形成在基板上的半导体本体中形成的台面的上表面上形成肖特基触点。在半导体本体的下表面上形成欧姆接触。在一个实施例中，在肖特基和欧姆接触之上形成绝缘层，并且在绝缘层中形成通孔至肖特基和欧姆接触以形成阳极和阴极电极。在另一个实施例中，在绝缘层中形成通孔至肖特基接触，并且在半导体本体中形成通孔至欧姆接触。形成与肖特基接触电接触的阳极电极。阴极电极形成为与衬底背面上的欧姆接触电接触。

7. 发明申请

US20110101371A1 Gallium nitride semiconductor 审中-公开
标题翻译：氮化镓半导体
公开(公告)号：US20110101371A1
公开(公告)日：2011-05-05
申请号：US12930179
申请日：2010-12-30
申请人： TingGang Zhu , Bryan S. Shelton , Marek K. Pabisz , Mark Gottfried , Linlin Liu , Milan Pophristic , Michael Murphy , Rick Stall
发明人： TingGang Zhu , Bryan S. Shelton , Marek K. Pabisz , Mark Gottfried , Linlin Liu , Milan Pophristic , Michael Murphy , Rick Stall
IPC分类号： H01L29/20
CPC分类号： H01L29/872 , H01L29/2003 , H01L29/475
摘要： A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.
摘要翻译：由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层，其厚度介于1微米与6微米之间，设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。优化了层厚度和细长指状物的长度和宽度，以实现具有大于500伏特的击穿电压，超过1安培的电流容量和小于3伏特的正向电压的器件。

8. 发明授权

US07436039B2 Gallium nitride semiconductor device 失效
标题翻译：氮化镓半导体器件
公开(公告)号：US07436039B2
公开(公告)日：2008-10-14
申请号：US11030554
申请日：2005-01-06
申请人： TingGang Zhu , Bryan S. Shelton , Marek K. Pabisz , Mark Gottfried , Linlin Liu , Milan Pophristic , Michael Murphy , Richard A. Stall
发明人： TingGang Zhu , Bryan S. Shelton , Marek K. Pabisz , Mark Gottfried , Linlin Liu , Milan Pophristic , Michael Murphy , Richard A. Stall
IPC分类号： H01L23/58
CPC分类号： H01L29/872 , H01L29/2003 , H01L29/475
摘要： A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.
摘要翻译：由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层，其厚度介于1微米与6微米之间，设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。优化了层厚度和细长指状物的长度和宽度，以实现具有大于500伏特的击穿电压，超过1安培的电流容量和小于3伏特的正向电压的器件。

9. 发明申请

US20060145283A1 Gallium nitride semiconductor device 失效
标题翻译：氮化镓半导体器件
公开(公告)号：US20060145283A1
公开(公告)日：2006-07-06
申请号：US11030554
申请日：2005-01-06
申请人： TingGang Zhu , Bryan Shelton , Marek Pabisz , Mark Gottfried , Linlin Liu , Milan Pophristic , Michael Murphy , Richard Stall
发明人： TingGang Zhu , Bryan Shelton , Marek Pabisz , Mark Gottfried , Linlin Liu , Milan Pophristic , Michael Murphy , Richard Stall
IPC分类号： H01L27/095 , H01L21/338
CPC分类号： H01L29/872 , H01L29/2003 , H01L29/475
摘要： A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.
摘要翻译：由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层，其厚度介于1微米与6微米之间，设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。优化了层厚度和细长指状物的长度和宽度，以实现具有大于500伏特的击穿电压，超过1安培的电流容量和小于3伏特的正向电压的器件。

10. 发明授权

US08772144B2 Vertical gallium nitride Schottky diode 有权
标题翻译：垂直氮化镓肖特基二极管
公开(公告)号：US08772144B2
公开(公告)日：2014-07-08
申请号：US13294903
申请日：2011-11-11
申请人： TingGang Zhu , Anup Bhalla , Ping Huang , Yueh-se Ho
发明人： TingGang Zhu , Anup Bhalla , Ping Huang , Yueh-se Ho
IPC分类号： H01L21/28 , H01L21/44
CPC分类号： H01L29/872 , H01L21/0217 , H01L21/0254 , H01L21/28581 , H01L21/30612 , H01L21/31111 , H01L21/56 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L25/18 , H01L27/0248 , H01L27/0814 , H01L29/0619 , H01L29/0688 , H01L29/2003 , H01L29/402 , H01L29/405 , H01L29/417 , H01L29/66136 , H01L29/66143 , H01L29/66212 , H01L29/861 , H01L29/8611 , H01L2224/0401 , H01L2224/04042 , H01L2224/05016 , H01L2224/05567 , H01L2224/11616 , H01L2224/13017 , H01L2224/13021 , H01L2224/13022 , H01L2924/00014 , H01L2924/1033 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/00012 , H01L2924/00 , H01L2224/05552
摘要： A vertical conduction nitride-based Schottky diode is formed using an insulating substrate which was lifted off after the diode device is encapsulated on the front side with a wafer level molding compound. The wafer level molding compound provides structural support on the front side of the diode device to allow the insulating substrate to be lifted off so that a conductive layer can be formed on the backside of the diode device as the cathode electrode. A vertical conduction nitride-based Schottky diode is thus realized. In another embodiment, a protection circuit for a vertical GaN Schottky diode employs a silicon-based vertical PN junction diode connected in parallel to the GaN Schottky diode to divert reverse bias avalanche current.
摘要翻译：使用绝缘基板形成垂直导电氮化物基肖特基二极管，绝缘基板在二极管器件用晶片级模塑料封装在前侧之后被提起。晶片级成型复合体在二极管器件的前侧提供结构支撑，以允许绝缘基板被提起，使得可以在作为阴极的二极管器件的背面上形成导电层。因此实现了基于垂直导电氮化物的肖特基二极管。在另一个实施例中，用于垂直GaN肖特基二极管的保护电路采用与GaN肖特基二极管并联连接的硅基垂直PN结二极管，以转移反向偏置雪崩电流。

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