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1. 发明申请

US20120000421A1 CONTROL APPARATUS FOR PLASMA IMMERSION ION IMPLANTATION OF A DIELECTRIC SUBSTRATE 审中-公开
标题翻译：用于等离子体沉积离子植入基板的控制装置
公开(公告)号：US20120000421A1
公开(公告)日：2012-01-05
申请号：US12829794
申请日：2010-07-02
申请人： Timothy Miller , Vikram Singh , Ludo Godet , Christopher J. Leavitt
发明人： Timothy Miller , Vikram Singh , Ludo Godet , Christopher J. Leavitt
IPC分类号： C23C14/48 , C23C14/50 , C23C14/52 , H05F3/00
CPC分类号： H01J37/32935 , C23C14/48 , C23C14/542 , H01J37/32412
摘要： A control apparatus for plasma immersion ion implantation of a dielectric substrate which includes an electrode disposed above a generated plasma in a plasma chamber. The electrode is biased with negative voltage pulses at a potential that is higher than a potential of a substrate or cathode configured to receive ion implantation. The electrode is more negative to give the electrons generated as secondary electrons from the electrode sufficient energy to overcome the negative voltage of the high voltage sheath around the substrate thereby reaching the substrate. These electrons are accelerated toward the substrate to neutralize charge build-up on the substrate.
摘要翻译：一种用于等离子体浸没离子注入电介质基板的控制装置，其包括设置在等离子体室中产生的等离子体之上的电极。电极以比被配置为接收离子注入的衬底或阴极的电位高的电位的负电压脉冲偏置。电极更为负，从而产生的二次电子产生的电子足够的能量来克服基底周围的高电压护套的负电压，从而到达衬底。这些电子朝向衬底加速，以中和衬底上的电荷积聚。

2. 发明授权

US07820533B2 Multi-step plasma doping with improved dose control 失效
标题翻译：多级等离子体掺杂，改善剂量控制
公开(公告)号：US07820533B2
公开(公告)日：2010-10-26
申请号：US11676069
申请日：2007-02-16
申请人： Timothy Miller , Vikram Singh
发明人： Timothy Miller , Vikram Singh
IPC分类号： H01L21/26
CPC分类号： H01L21/2236 , H01J37/32412 , H01J37/32706
摘要： A method of multi-step plasma doping a substrate includes igniting a plasma from a process gas. A first plasma condition is established for performing a first plasma doping step. The substrate is biased so that ions in the plasma having the first plasma condition impact a surface of the substrate thereby exposing the substrate to a first dose. The first plasma condition transitions to a second plasma condition. The substrate is biased so that ions in the plasma having the second plasma condition impact the surface of the substrate thereby exposing the substrate to a second dose. The first and second plasma conditions are chosen so that the first and second doses combine to achieve a predetermined distribution of dose across at least a portion of the substrate.
摘要翻译：多级等离子体掺杂衬底的方法包括从处理气体点燃等离子体。建立第一等离子体条件用于执行第一等离子体掺杂步骤。衬底被偏置，使得具有第一等离子体状态的等离子体中的离子影响衬底的表面，从而将衬底暴露于第一剂量。第一等离子体条件转变到第二等离子体条件。衬底被偏置，使得具有第二等离子体状态的等离子体中的离子冲击衬底的表面，从而将衬底暴露于第二剂量。选择第一和第二等离子体条件使得第一和第二剂量组合以实现在衬底的至少一部分上的预定剂量分布。

3. 发明申请

US20090104761A1 Plasma Doping System With Charge Control 审中-公开
标题翻译：带充电控制的等离子体掺杂系统
公开(公告)号：US20090104761A1
公开(公告)日：2009-04-23
申请号：US11875062
申请日：2007-10-19
申请人： Yongbae Jeon , Vikram Singh , Timothy Miller , Ziwei Fang , Steven Walther , Atul Gupta
发明人： Yongbae Jeon , Vikram Singh , Timothy Miller , Ziwei Fang , Steven Walther , Atul Gupta
IPC分类号： H01L21/26 , C23C16/513
CPC分类号： H01J37/32642 , H01J37/32412 , H01J37/32935
摘要： A method of plasma doping includes generating a plasma comprising dopant ions proximate to a platen supporting a substrate in a plasma chamber. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. At least one sensor measuring data related to charging conditions favorable for forming an electrical discharge is monitored. At least one plasma process parameter is modified in response to the measured data, thereby reducing a probability of forming an electrical discharge.
摘要翻译：等离子体掺杂的方法包括产生等离子体，该等离子体包括邻近于在等离子体室中支撑衬底的压板的掺杂剂离子。压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。监测至少一个测量与有利于形成放电的充电条件有关的数据的传感器。响应于测量数据修改至少一个等离子体处理参数，从而降低形成放电的可能性。

4. 发明申请

US20080200015A1 MULTI-STEP PLASMA DOPING WITH IMPROVED DOSE CONTROL 失效
标题翻译：具有改进剂量控制的多步等离子体喷射
公开(公告)号：US20080200015A1
公开(公告)日：2008-08-21
申请号：US11676069
申请日：2007-02-16
申请人： Timothy Miller , Vikram Singh
发明人： Timothy Miller , Vikram Singh
IPC分类号： H01L21/04
CPC分类号： H01L21/2236 , H01J37/32412 , H01J37/32706
摘要： A method of multi-step plasma doping a substrate includes igniting a plasma from a process gas. A first plasma condition is established for performing a first plasma doping step. The substrate is biased so that ions in the plasma having the first plasma condition impact a surface of the substrate thereby exposing the substrate to a first dose. The first plasma condition transitions to a second plasma condition. The substrate is biased so that ions in the plasma having the second plasma condition impact the surface of the substrate thereby exposing the substrate to a second dose. The first and second plasma conditions are chosen so that the first and second doses combine to achieve a predetermined distribution of dose across at least a portion of the substrate.
摘要翻译：多级等离子体掺杂衬底的方法包括从处理气体点燃等离子体。建立第一等离子体条件用于执行第一等离子体掺杂步骤。衬底被偏置，使得具有第一等离子体状态的等离子体中的离子影响衬底的表面，从而将衬底暴露于第一剂量。第一等离子体条件转变到第二等离子体条件。衬底被偏置，使得具有第二等离子体状态的等离子体中的离子冲击衬底的表面，从而将衬底暴露于第二剂量。选择第一和第二等离子体条件使得第一和第二剂量组合以实现在衬底的至少一部分上的预定剂量分布。

5. 发明申请

US20050205212A1 RF Plasma Source With Conductive Top Section 审中-公开
标题翻译：射频等离子体源与导电顶部
公开(公告)号：US20050205212A1
公开(公告)日：2005-09-22
申请号：US10905172
申请日：2004-12-20
申请人： Vikram Singh , Harold Persing , Timothy Miller
发明人： Vikram Singh , Harold Persing , Timothy Miller
IPC分类号： H01J37/32 , C23F1/00
CPC分类号： H01J37/32412
摘要： A plasma source includes a chamber that contains a process gas. The chamber has a chamber top comprising a first section formed of a dielectric material that extends in a horizontal direction. A second section of the chamber top is formed of a dielectric material that extends a height from the first section in a vertical direction. A top section of the chamber top is formed of a conductive material that extends a length across the second section in the horizontal direction. A radio frequency antenna is positioned proximate to at least one of the first section and the second section. The radio frequency antenna induces radio frequency currents into the chamber that excite and ionize the process gas so as to generate a plasma in the chamber.
摘要翻译：等离子体源包括含有工艺气体的腔室。该室具有室顶部，其包括由在水平方向上延伸的电介质材料形成的第一部分。腔室顶部的第二部分由在垂直方向上从第一部分延伸高度的电介质材料形成。腔室顶部的顶部由导电材料形成，该导电材料在水平方向上延伸穿过第二部分的长度。无线电频率天线位于第一部分和第二部分中的至少一个附近。射频天线将射频电流引入到腔室中，激发和离子化处理气体，以便在腔室中产生等离子体。

6. 发明申请

US20120111834A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20120111834A1
公开(公告)日：2012-05-10
申请号：US13353993
申请日：2012-01-19
申请人： Ludovic Godet , Timothy Miller , Svetlana Radovanov , Anthony Renau , Vikram Singh
发明人： Ludovic Godet , Timothy Miller , Svetlana Radovanov , Anthony Renau , Vikram Singh
IPC分类号： B44C1/22 , H01L21/02 , H05H1/24 , C23C16/50 , C23C16/52
CPC分类号： H01J37/32623 , C23C14/48
摘要： A plasma processing apparatus includes a process chamber, a platen for supporting a workpiece, a source configured to generate a plasma in the process chamber, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.
摘要翻译：等离子体处理装置包括处理室，用于支撑工件的压板，被配置为在处理室中产生等离子体的源和绝缘改性剂。绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角到工件。

7. 发明申请

US20100255665A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20100255665A1
公开(公告)日：2010-10-07
申请号：US12644103
申请日：2009-12-22
申请人： Ludovic Godet , Timothy Miller , Svetlana Radovanov , Anthony Renau , Vikram Singh
发明人： Ludovic Godet , Timothy Miller , Svetlana Radovanov , Anthony Renau , Vikram Singh
IPC分类号： H01L21/26 , C23F1/00 , C23C16/00 , H01L21/3065
CPC分类号： H01J37/32623 , C23C14/48
摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.
摘要翻译：等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角到工件。

8. 发明申请

US20100252531A1 Enhanced Etch and Deposition Profile Control Using Plasma Sheath Engineering 有权
标题翻译：使用等离子体护套工程的增强蚀刻和沉积轮廓控制
公开(公告)号：US20100252531A1
公开(公告)日：2010-10-07
申请号：US12645638
申请日：2009-12-23
申请人： Ludovic Godet , Timothy Miller , George Papasouliotis , Vikram Singh
发明人： Ludovic Godet , Timothy Miller , George Papasouliotis , Vikram Singh
IPC分类号： B44C1/22 , C23C16/513
CPC分类号： B44C1/227 , C23C16/045 , C23C16/50 , H01J37/32412 , H01J37/32623 , H01J2237/3344 , H01J2237/3345
摘要： A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed. In this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.
摘要翻译：使用等离子体处理工具将材料沉积在工件上。例如，公开了一种用于材料的共形沉积的方法。在该实施例中，等离子体护套形状被修改以允许材料在入射角的范围内冲击工件。通过随时间改变入射角的这个范围，可以沉积各种不同的特征。在另一个实施例中，使用等离子体处理工具来蚀刻工件。在该实施例中，等离子体鞘形状被改变以允许离子在入射角的范围内冲击工件。通过随时间改变入射角的这个范围，可以产生各种不同形状的特征。

9. 发明申请

US20090104719A1 Plasma Doping System with In-Situ Chamber Condition Monitoring 审中-公开
标题翻译：等离子体掺杂系统与原位室状态监测
公开(公告)号：US20090104719A1
公开(公告)日：2009-04-23
申请号：US11877312
申请日：2007-10-23
申请人： Atul Gupta , Timothy Miller , Harold M. Persing , Daniel Distaso , Vikram Singh
发明人： Atul Gupta , Timothy Miller , Harold M. Persing , Daniel Distaso , Vikram Singh
IPC分类号： H01L21/66
CPC分类号： H01L22/20 , H01L22/12
摘要： A method of in-situ monitoring of a plasma doping process includes generating a plasma comprising dopant ions in a chamber proximate to a platen supporting a substrate. A platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A dose of ions attracted to the substrate is measured. At least one sensor measurement is performed to determine the condition of the plasma chamber. In addition, at least one plasma process parameter is modified in response to the measured dose and in response to the at least one sensor measurement.
摘要翻译：等离子体掺杂过程的原位监测方法包括在靠近支撑衬底的压板的腔室中产生包含掺杂剂离子的等离子体。压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。测量吸附到基底的一定剂量的离子。执行至少一个传感器测量以确定等离子体室的状态。此外，至少一个等离子体处理参数响应于测量的剂量并且响应于至少一个传感器测量而被修改。

10. 发明申请

US20050287307A1 Etch and deposition control for plasma implantation 审中-公开
标题翻译：用于等离子体植入的蚀刻和沉积控制
公开(公告)号：US20050287307A1
公开(公告)日：2005-12-29
申请号：US10874944
申请日：2004-06-23
申请人： Vikram Singh , Harold Persing , Timothy Miller , Atul Gupta , Ziwei Fang
发明人： Vikram Singh , Harold Persing , Timothy Miller , Atul Gupta , Ziwei Fang
IPC分类号： C03C15/00 , C23C14/00 , H01L21/223
CPC分类号： H01L21/2236 , H01J37/32412
摘要： A method for ion implantation of a substrate includes forming a plasma from at least one implant material comprising at least one implant species, implanting the at least one implant species into a surface of the substrate, and directing at least one surface-modifying species at the surface to reduce a surface damage associated with the plasma. An apparatus for ion implantation is configured to implement this method.
摘要翻译：用于离子植入衬底的方法包括从至少一种植入材料形成等离子体，所述至少一种植入材料包括至少一种植入物种，将所述至少一种植入物种植入所述基质的表面，以及将所述至少一种表面改性物质表面以减少与等离子体相关的表面损伤。用于离子注入的装置被配置为实现该方法。

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