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1. 发明授权

US08101995B2 Integrated MOSFET and Schottky device 有权
标题翻译：集成MOSFET和肖特基器件
公开(公告)号：US08101995B2
公开(公告)日：2012-01-24
申请号：US12028239
申请日：2008-02-08
申请人： Timothy Henson , Dev Alok Girdhar
发明人： Timothy Henson , Dev Alok Girdhar
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/41766 , H01L29/42368 , H01L29/456 , H01L29/66727 , H01L29/66734 , H01L29/7806
摘要： A power semiconductor device that includes a trench power MOSFET with deep source field electrodes and an integrated Schottky diode.
摘要翻译：一种功率半导体器件，包括具有深源场电极的沟槽功率MOSFET和集成肖特基二极管。

2. 发明授权

US07998808B2 Semiconductor device fabrication using spacers 有权
标题翻译：使用间隔物的半导体器件制造
公开(公告)号：US07998808B2
公开(公告)日：2011-08-16
申请号：US12409077
申请日：2009-03-23
申请人： Vijay Viswanathan , Dev Alok Girdhar , Timothy Henson , David Paul Jones
发明人： Vijay Viswanathan , Dev Alok Girdhar , Timothy Henson , David Paul Jones
IPC分类号： H01L21/8242 , H01L21/20 , H01L21/76
CPC分类号： H01L29/7813 , H01L21/2815 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42376 , H01L29/66719 , H01L29/66727 , H01L29/66734
摘要： A process for fabrication of a semiconductor device that includes forming a first trench in a semiconductor body, forming spaced spacers in the first trench, and forming a narrower second trench at the bottom of the first trench using the spacers as a mask.
摘要翻译：一种制造半导体器件的方法，包括在半导体本体中形成第一沟槽，在第一沟槽中形成间隔开的间隔物，并且使用间隔物作为掩模，在第一沟槽的底部形成较窄的第二沟槽。

3. 发明申请

US20090263952A1 SEMICONDUCTOR DEVICE FABRICATION USING SPACERS 有权
标题翻译：半导体器件制造使用间隔
公开(公告)号：US20090263952A1
公开(公告)日：2009-10-22
申请号：US12409077
申请日：2009-03-23
申请人： Vijay Viswanathan , Dev Alok Girdhar , Timothy Henson , David Paul Jones
发明人： Vijay Viswanathan , Dev Alok Girdhar , Timothy Henson , David Paul Jones
IPC分类号： H01L21/44
CPC分类号： H01L29/7813 , H01L21/2815 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42376 , H01L29/66719 , H01L29/66727 , H01L29/66734
摘要： A process for fabrication of a semiconductor device that includes forming a first trench in a semiconductor body, forming spaced spacers in the first trench, and forming a narrower second trench at the bottom of the first trench using the spacers as a mask.
摘要翻译：一种半导体器件的制造方法，其包括在半导体本体中形成第一沟槽，在第一沟槽中形成间隔开的间隔物，并且使用间隔物作为掩模，在第一沟槽的底部形成较窄的第二沟槽。

4. 发明申请

US20080191274A1 INTEGRATED MOSFET AND SCHOTTKY DEVICE 有权
标题翻译：集成MOSFET和肖特基二极管器件
公开(公告)号：US20080191274A1
公开(公告)日：2008-08-14
申请号：US12028239
申请日：2008-02-08
申请人： Timothy Henson , Dev Alok Girdhar
发明人： Timothy Henson , Dev Alok Girdhar
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/41766 , H01L29/42368 , H01L29/456 , H01L29/66727 , H01L29/66734 , H01L29/7806
摘要： A power semiconductor device that includes a trench power MOSFET with deep source field electrodes and an integrated Schottky diode.
摘要翻译：一种功率半导体器件，包括具有深源场电极的沟槽功率MOSFET和集成肖特基二极管。

5. 发明申请

US20080191273A1 MOSFET DEVICE HAVING IMPROVED AVALANCHE CAPABILITY 审中-公开
标题翻译：具有改进的AVALANCHE能力的MOSFET器件
公开(公告)号：US20080191273A1
公开(公告)日：2008-08-14
申请号：US12028101
申请日：2008-02-08
申请人： Timothy Henson , Dev Alok Girdhar
发明人： Timothy Henson , Dev Alok Girdhar
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/41766 , H01L2924/0002 , H01L2924/00
摘要： A power MOSFET that includes deep source field electrodes, the power MOSFET including one trench that includes an insulated gate and another trench that does not include an insulated gate, both trenches including a source field electrode, a source region adjacent the one trench and no source region adjacent the another trench, and a high conductivity contact region between the two trenches and disposed to divert at least a portion of the avalanche current away from regions under the source region and toward the high conductivity contact region.
摘要翻译：一种功率MOSFET，其包括深源场电极，功率MOSFET包括包括绝缘栅极的一个沟槽和不包括绝缘栅极的另一个沟槽，两个沟槽包括源场电极，与该沟槽相邻的源极区域和无源极区域，以及两个沟槽之间的高电导率接触区域，并设置成将至少一部分雪崩电流从源极区域下方转移到高电导率接触区域。

6. 发明申请

US20090278198A1 Deep source electrode MOSFET 审中-公开
标题翻译：深源电极MOSFET
公开(公告)号：US20090278198A1
公开(公告)日：2009-11-12
申请号：US12460434
申请日：2009-07-16
申请人： Jianjun Cao , Timothy Henson
发明人： Jianjun Cao , Timothy Henson
IPC分类号： H01L29/78
CPC分类号： H01L29/7811 , H01L21/2815 , H01L29/407 , H01L29/41766 , H01L29/456 , H01L29/66727 , H01L29/66734 , H01L29/7813
摘要： A power semiconductor device that includes a plurality of source trenches that extend to a depth below the gate electrodes and a termination region that includes a termination trench that is as deep as the source trenches.
摘要翻译：一种功率半导体器件，包括延伸到栅极电极下方深度的多个源极沟槽，以及包括与源沟槽一样深的端接沟槽的端接区域。

7. 发明申请

US20080035993A1 Termination design for deep source electrode MOSFET 有权
标题翻译：深源电极MOSFET的端接设计
公开(公告)号：US20080035993A1
公开(公告)日：2008-02-14
申请号：US11890849
申请日：2007-08-08
申请人： Jianjun Cao , Timothy Henson
发明人： Jianjun Cao , Timothy Henson
IPC分类号： H01L29/78
CPC分类号： H01L29/7811 , H01L21/2815 , H01L29/407 , H01L29/41766 , H01L29/456 , H01L29/66727 , H01L29/66734 , H01L29/7813
摘要： A power semiconductor device that includes a plurality of source trenches that extend to a depth below the gate electrodes and a termination region that includes a termination trench that is as deep as the source trenches.
摘要翻译：一种功率半导体器件，包括延伸到栅极电极下方深度的多个源极沟槽，以及包括与源沟槽一样深的端接沟槽的端接区域。

8. 发明申请

US20060033154A1 MOSgated power semiconductor device with source field electrode 有权
公开(公告)号：US20060033154A1
公开(公告)日：2006-02-16
申请号：US11110467
申请日：2005-04-20
申请人： Jianjun Cao , Timothy Henson , Naresh Thapar , Paul Harvey , David Kent
发明人： Jianjun Cao , Timothy Henson , Naresh Thapar , Paul Harvey , David Kent
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L29/7828 , H01L29/407 , H01L29/66666
摘要： A power semiconductor device which includes a source field electrode, and at least one insulated gate electrode adjacent a respective side of the source field electrode, the source field electrode and the gate electrode being disposed in a common trench, and a method for fabricating the device.

9. 发明授权

US06919599B2 Short channel trench MOSFET with reduced gate charge 有权
标题翻译：具有减少栅极电荷的短通道沟槽MOSFET
公开(公告)号：US06919599B2
公开(公告)日：2005-07-19
申请号：US10603461
申请日：2003-06-25
申请人： Timothy Henson
发明人： Timothy Henson
IPC分类号： H01L29/06 , H01L29/08 , H01L29/10 , H01L29/78 , H01L29/772
CPC分类号： H01L29/7813 , H01L29/0623 , H01L29/0634 , H01L29/0878 , H01L29/1095
摘要： A trench-type MOSgated device including high conductivity regions formed at the bottom of its trenches and field relief regions at or below the bottom of its channel region.
摘要翻译：一种沟槽型MOS器件，其包括在其沟槽底部形成的高导电性区域和位于其沟道区域底部或底部的场解除区域。

10. 发明授权

US07671441B2 Trench MOSFET with sidewall spacer gates 有权
标题翻译：沟槽MOSFET与侧壁间隔栅极
公开(公告)号：US07671441B2
公开(公告)日：2010-03-02
申请号：US11396759
申请日：2006-04-03
申请人： Timothy Henson
发明人： Timothy Henson
IPC分类号： H01L21/20
CPC分类号： H01L29/7813 , H01L21/2815 , H01L29/0878 , H01L29/41766 , H01L29/4236 , H01L29/4933 , H01L29/66734
摘要： A semiconductor power device includes a semiconductor body with a plurality of gate trenches formed therein. Disposed within each gate trench is a spacer gate that extends along at least a portion of the sidewalls of the gate trench but not along at least a portion of the bottom surface of the trench. The spacer gate of each gate trench may also include a layer of silicide along outer surfaces thereof. The semiconductor body may include a channel region and each gate trench may extend through the channel region and into the semiconductor body. Formed at the bottom of each gate trench within the semiconductor body may be a tip implant of the same conductivity as the semiconductor body. In addition, a deep body implant of the same conductivity as the channel region may be formed at the base of the channel region.
摘要翻译：半导体功率器件包括其中形成有多个栅极沟槽的半导体本体。在每个栅极沟槽内设置间隔栅极，其沿栅极沟槽的至少一部分侧壁延伸，但不沿着沟槽的底表面的至少一部分延伸。每个栅极沟槽的间隔栅极还可以包括沿着其外表面的硅化物层。半导体主体可以包括沟道区，并且每个栅极沟槽可以延伸穿过沟道区并进入半导体本体。在半导体本体内的每个栅极沟槽的底部形成可以是与半导体本体相同导电性的尖端植入物。此外，可以在沟道区域的基部形成与沟道区相同导电性的深体植入物。

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