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    • 10. 发明授权
    • Anisotropic silicide etching process
    • 各向异性硅化物蚀刻工艺
    • US4414057A
    • 1983-11-08
    • US446597
    • 1982-12-03
    • Ronald R. BourassaMichael R. Reeder
    • Ronald R. BourassaMichael R. Reeder
    • H01L21/302H01L21/3065H01L21/3213H01L21/306B44C1/22C03C15/00C23F1/02
    • H01L21/32137
    • A process is described for anisotropically etching semiconductor products which include a lower dielectric layer, an intermediate polysilicon layer, and an upper silicide layer such as titanium silicide. A pattern-defining layer will normally overlie the silicide layer to define target areas to be etched. In a first step, the silicide is etched through using Freon 115 chloro, pentafluoroethane (C.sub.2 ClF.sub.5) in a plasma etching chamber conditioned to provide a reactive ion etch. The etch is completed in the same chamber using a second gas which includes an amount of Cl.sub.2 selected to etch anisotropically through the polysilicon layer without substantially etching the dielectric layer. Preferably, both etches occur after covering inner surfaces of the etching chamber with a material which releases molecules of the character included in the pattern-defining layer, such as Kapton, a polymide, in the disclosed example.
    • 描述了各向异性蚀刻半导体产品的方法,其包括下介电层,中间多晶硅层和诸如硅化钛的上硅化物层。 图案定义层通常覆盖硅化物层以限定待蚀刻的靶区域。 在第一步中,通过在调节为提供反应离子蚀刻的等离子体蚀刻室中使用氟利昂115氯,五氟乙烷(C2ClF5)来蚀刻硅化物。 使用第二气体在相同的室中完成蚀刻,所述第二气体包括选择的量的各向异性蚀刻通过多晶硅层的Cl2,而基本上不蚀刻介电层。 优选地,在所揭示的实施例中,蚀刻室的内表面覆盖蚀刻室的内表面之后,使用释放包括在图案限定层中的字符分子的材料,例如Kapton,Polymide,发生蚀刻。