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1. 发明申请

US20130001712A1 ACCELERATION SENSOR 有权
标题翻译：加速传感器
公开(公告)号：US20130001712A1
公开(公告)日：2013-01-03
申请号：US13612042
申请日：2012-09-12
申请人： Thoralf Kautzsch , Bernhard Winkler , Dirk Meinhold , Ben Rosam , Bernd Foeste , Andreas Thamm , Boris Binder
发明人： Thoralf Kautzsch , Bernhard Winkler , Dirk Meinhold , Ben Rosam , Bernd Foeste , Andreas Thamm , Boris Binder
IPC分类号： H01L29/84 , H01L21/02
CPC分类号： G01P15/125 , B81B2201/0235 , B81C1/00182 , G01P15/0802
摘要： A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense movement of the mass element.
摘要翻译：半导体器件包括半导体衬底和配置为响应于所施加的加速度而移动的半导体质量元件。质量元件由蚀刻到半导体衬底中的沟槽和质量元件下方的空腔限定。半导体器件包括感测元件，其被配置为感测质量元件的移动。

2. 发明授权

US08266962B2 Acceleration sensor 有权
标题翻译：加速度传感器
公开(公告)号：US08266962B2
公开(公告)日：2012-09-18
申请号：US12361212
申请日：2009-01-28
申请人： Thoralf Kautzsch , Bernhard Winkler , Dirk Meinhold , Ben Rosam , Bernd Foeste , Andreas Thamm , Boris Binder
发明人： Thoralf Kautzsch , Bernhard Winkler , Dirk Meinhold , Ben Rosam , Bernd Foeste , Andreas Thamm , Boris Binder
IPC分类号： G01P15/125 , H01L29/84 , H01L21/02
CPC分类号： G01P15/125 , B81B2201/0235 , B81C1/00182 , G01P15/0802
摘要： A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense movement of the mass element and a complementary metal-oxide-semiconductor (CMOS) circuit formed on the substrate.
摘要翻译：半导体器件包括半导体衬底和配置为响应于所施加的加速度而移动的半导体质量元件。质量元件由蚀刻到半导体衬底中的沟槽和质量元件下方的空腔限定。半导体器件包括感测元件，其被配置为感测质量元件的移动和形成在衬底上的互补金属氧化物半导体（CMOS）电路。

3. 发明申请

US20100186511A1 ACCELERATION SENSOR 有权
标题翻译：加速传感器
公开(公告)号：US20100186511A1
公开(公告)日：2010-07-29
申请号：US12361212
申请日：2009-01-28
申请人： Thoralf Kautzsch , Bernhard Winkler , Dirk Meinhold , Ben Rosam , Bernd Foeste , Andreas Thamm , Boris Binder
发明人： Thoralf Kautzsch , Bernhard Winkler , Dirk Meinhold , Ben Rosam , Bernd Foeste , Andreas Thamm , Boris Binder
IPC分类号： G01P15/125 , H01L29/84 , H01L21/02
CPC分类号： G01P15/125 , B81B2201/0235 , B81C1/00182 , G01P15/0802
摘要： A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense movement of the mass element and a complementary metal-oxide-semiconductor (CMOS) circuit formed on the substrate.
摘要翻译：半导体器件包括半导体衬底和配置为响应于所施加的加速度而移动的半导体质量元件。质量元件由蚀刻到半导体衬底中的沟槽和质量元件下方的空腔限定。半导体器件包括感测元件，其被配置为感测质量元件的移动和形成在衬底上的互补金属氧化物半导体（CMOS）电路。

4. 发明授权

US08627720B2 Acceleration sensor 有权
标题翻译：加速度传感器
公开(公告)号：US08627720B2
公开(公告)日：2014-01-14
申请号：US13612042
申请日：2012-09-12
申请人： Thoralf Kautzsch , Bernhard Winkler , Dirk Meinhold , Ben Rosam , Bernd Foeste , Andreas Thamm , Boris Binder
发明人： Thoralf Kautzsch , Bernhard Winkler , Dirk Meinhold , Ben Rosam , Bernd Foeste , Andreas Thamm , Boris Binder
IPC分类号： G01P15/125 , H01L29/84 , H01L21/02
CPC分类号： G01P15/125 , B81B2201/0235 , B81C1/00182 , G01P15/0802
摘要： A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense movement of the mass element.
摘要翻译：半导体器件包括半导体衬底和配置为响应于所施加的加速度而移动的半导体质量元件。质量元件由蚀刻到半导体衬底中的沟槽和质量元件下方的空腔限定。半导体器件包括感测元件，其被配置为感测质量元件的移动。

5. 发明授权

US09266719B2 Methods of manufacture MEMS devices 有权
标题翻译：制造MEMS器件的方法
公开(公告)号：US09266719B2
公开(公告)日：2016-02-23
申请号：US13406069
申请日：2012-02-27
申请人： Florian Schoen , Wolfgang Raberg , Bernhard Winkler , Werner Weber
发明人： Florian Schoen , Wolfgang Raberg , Bernhard Winkler , Werner Weber
IPC分类号： H01L41/00 , B81C1/00 , H01L41/09
CPC分类号： B81C1/00182 , B81B2201/0271 , H01L41/0933 , Y10S977/732
摘要： Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.
摘要翻译：公开了微机电系统（MEMS）装置及其制造方法。在一个实施例中，MEMS器件包括第一半导体材料和设置在第一半导体材料中的至少一个沟槽，所述至少一个沟槽具有侧壁。绝缘材料层设置在第一半导体材料中的至少一个沟槽的侧壁的上部上方，以及靠近侧壁的第一半导体材料的顶表面的一部分之上。第二半导体材料或导电材料设置在至少一个沟槽内，并且至少在绝缘材料层的上方设置在靠近侧壁的第一半导体材料的顶表面的部分之上。

6. 发明授权

US09021887B2 Micromechanical semiconductor sensing device 有权
标题翻译：微机械半导体感测装置
公开(公告)号：US09021887B2
公开(公告)日：2015-05-05
申请号：US13329618
申请日：2011-12-19
申请人： Franz-Peter Kalz , Horst Theuss , Bernhard Winkler , Khalil Hosseini , Joachim Mahler , Manfred Mengel
发明人： Franz-Peter Kalz , Horst Theuss , Bernhard Winkler , Khalil Hosseini , Joachim Mahler , Manfred Mengel
IPC分类号： G01B7/16 , B81B7/02 , G01L9/00 , G01L19/00
CPC分类号： B81B7/02 , B81B3/0021 , B81B3/0072 , B81B2201/0235 , B81B2201/0264 , B81C2203/0154 , G01L1/18 , G01L9/0072 , G01L19/0092 , G01L19/02
摘要： Micromechanical semiconductor sensing device comprises a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, said piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.
摘要翻译：微机械半导体感测装置包括被配置为产生电感测信号的微机械感测结构和设置在微机械感测结构中的压阻感测装置，所述压阻感测装置被布置成感测扰动电感测信号的机械应力，并被配置为基于感测到的电感测信号的机械应力产生电干扰信号。

7. 发明授权

US08618620B2 Pressure sensor package systems and methods 有权
标题翻译：压力传感器封装系统和方法
公开(公告)号：US08618620B2
公开(公告)日：2013-12-31
申请号：US12835111
申请日：2010-07-13
申请人： Bernhard Winkler , Rainer Leuschner , Horst Theuss
发明人： Bernhard Winkler , Rainer Leuschner , Horst Theuss
IPC分类号： H01L29/84
CPC分类号： B81B7/0058 , B81B2201/025 , B81B2201/0264 , B81B2207/012 , B81B2207/015 , B81C2203/0154 , G01L9/0054 , G01L15/00 , G01L19/141 , G01L19/148 , H01L29/84 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48465 , H01L2924/1461 , H01L2924/181 , H01L2924/1815 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Embodiments relate to integrated circuit (IC) sensors and sensing systems and methods. In an embodiment, an IC sensor device includes at least one sensing element; a framing element disposed around the at least one sensing element at a wafer-level; and a package having at least one port predefined at the wafer-level by the framing element, the at least one port configured to expose at least a portion of the at least one sensing element to an ambient environment.
摘要翻译：实施例涉及集成电路（IC）传感器和感测系统和方法。在一个实施例中，IC传感器装置包括至少一个感测元件; 在晶片级周围设置在所述至少一个感测元件周围的框架元件; 以及封装，其具有通过框架元件在晶片级预定义的至少一个端口，所述至少一个端口被配置为将所述至少一个感测元件的至少一部分暴露于周围环境。

8. 发明申请

US20130152696A1 MICROMECHANICAL SEMICONDUCTOR SENSING DEVICE 有权
标题翻译：微电子半导体传感器件
公开(公告)号：US20130152696A1
公开(公告)日：2013-06-20
申请号：US13329618
申请日：2011-12-19
申请人： Franz-Peter Kalz , Horst Theuss , Bernhard Winkler , Khalil Hosseini , Joachim Mahler , Manfred Mengel
发明人： Franz-Peter Kalz , Horst Theuss , Bernhard Winkler , Khalil Hosseini , Joachim Mahler , Manfred Mengel
IPC分类号： G01B7/16
CPC分类号： B81B7/02 , B81B3/0021 , B81B3/0072 , B81B2201/0235 , B81B2201/0264 , B81C2203/0154 , G01L1/18 , G01L9/0072 , G01L19/0092 , G01L19/02
摘要： Micromechanical semiconductor sensing device comprises a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, said piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.
摘要翻译：微机械半导体感测装置包括被配置为产生电感测信号的微机械感测结构和设置在微机械感测结构中的压阻感测装置，所述压阻感测装置被布置成感测扰动电感测信号的机械应力，并被配置为基于感测到的电感测信号的机械应力产生电干扰信号。

9. 发明申请

US20120211805A1 CAVITY STRUCTURES FOR MEMS DEVICES 审中-公开
标题翻译： MEMS器件的CAVITY结构
公开(公告)号：US20120211805A1
公开(公告)日：2012-08-23
申请号：US13032334
申请日：2011-02-22
申请人： Bernhard Winkler , Andreas Zankl , Klemens Pruegl , Stefan Kolb
发明人： Bernhard Winkler , Andreas Zankl , Klemens Pruegl , Stefan Kolb
IPC分类号： H01L29/84 , H01L21/02
CPC分类号： B81B7/008 , B81B2201/0264 , B81B2203/0315 , B81B2207/015 , B81C1/00158 , B81C1/00246 , B81C2203/0707 , B81C2203/0714 , B81C2203/0735 , B81C2203/0771 , H01L27/0611
摘要： Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective.
摘要翻译：实施例涉及MEMS器件，特别是与单个晶片上的相关电气器件集成的MEMS器件。实施例利用模块化工艺流程概念作为MEMS首要方法的一部分，使得能够使用新颖的腔体密封过程。因此，通过MEMS处理对电气装置的影响和潜在的有害影响被减少或消除。同时，提供了一种高度灵活的解决方案，可以实现各种测量原理，包括电容式和压阻式。因此，可以在提高性能和质量的同时解决各种传感器应用，同时保持成本效益。

10. 发明授权

US07851875B2 MEMS devices and methods of manufacture thereof 有权
标题翻译： MEMS器件及其制造方法
公开(公告)号：US07851875B2
公开(公告)日：2010-12-14
申请号：US12013174
申请日：2008-01-11
申请人： Florian Schoen , Wolfgang Raberg , Bernhard Winkler , Werner Weber
发明人： Florian Schoen , Wolfgang Raberg , Bernhard Winkler , Werner Weber
IPC分类号： H01L29/84
CPC分类号： B81C1/00182 , B81B2201/0271 , H01L41/0933 , Y10S977/732
摘要： Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.
摘要翻译：公开了微机电系统（MEMS）装置及其制造方法。在一个实施例中，MEMS器件包括第一半导体材料和设置在第一半导体材料中的至少一个沟槽，所述至少一个沟槽具有侧壁。绝缘材料层设置在第一半导体材料中的至少一个沟槽的侧壁的上部上方，以及靠近侧壁的第一半导体材料的顶表面的一部分之上。第二半导体材料或导电材料设置在至少一个沟槽内，并且至少在绝缘材料层的上方设置在靠近侧壁的第一半导体材料的顶表面的部分之上。

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