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    • 3. 发明申请
    • High-power switch
    • 大功率开关
    • US20100013571A1
    • 2010-01-21
    • US12218912
    • 2008-07-18
    • Thomas William ArellHenry Z. Liwinski
    • Thomas William ArellHenry Z. Liwinski
    • H01P1/15
    • H03K17/693H03K17/165H03K2217/0036H03K2217/0054
    • A low-loss Radio Frequency (RF) switch for high-power RF signals. The RF switch includes a first-biasing circuit connected to a first transistor and a second-biasing circuit connected to a second transistor. The RF switch switches its output signal between a first input signal and a second input signal. The first transistor is in a conduction state and the second transistor is in a non-conduction state when the first input signal is to be conducted to the output signal. The first-biasing circuit biases the first transistor at a first voltage for increasing conduction of the first input signal and the second-biasing circuit biases the second transistor at a second voltage for decreasing conduction of the first input signal. Moreover, the second transistor is in a conduction state and the first transistor is in a non-conduction state when the second input signal is to be conducted to the output signal.
    • 用于高功率RF信号的低损耗射频(RF)开关。 RF开关包括连接到第一晶体管的第一偏置电路和连接到第二晶体管的第二偏置电路。 RF开关在第一输入信号和第二输入信号之间切换其输出信号。 当第一输入信号被传导到输出信号时,第一晶体管处于导通状态,第二晶体管处于非导通状态。 第一偏置电路以第一电压偏置第一晶体管以增加第一输入信号的导通,而第二偏置电路以第二电压偏压第二晶体管,以减小第一输入信号的导通。 此外,第二晶体管处于导通状态,并且当第二输入信号要被传导到输出信号时,第一晶体管处于非导通状态。