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1. 发明授权

US07462890B1 Nanotube transistor integrated circuit layout 失效
标题翻译：纳米管晶体管集成电路布局
公开(公告)号：US07462890B1
公开(公告)日：2008-12-09
申请号：US11466893
申请日：2006-08-24
申请人： Thomas W. Tombler, Jr. , Brian Y. Lim
发明人： Thomas W. Tombler, Jr. , Brian Y. Lim
IPC分类号： H01L31/036
CPC分类号： H01L51/0558 , B82Y10/00 , H01L51/0048 , H01L51/057 , Y10S977/742 , Y10S977/936
摘要： An integrated circuit layout of a carbon nanotube transistor device includes a first and second conductive material. The first conductive material is connected to ends of single-walled carbon nanotubes below (or above) the first conductive material. The second conductive material is not electrically connected to the nanotubes below (or above) the second conductive material. The first conductive material may be metal, and the second conductive material may be polysilicon or metal. The nanotubes are perpendicular to the first conductive material. In one implementation, the first and second conductive materials form interdigitated fingers. In another implementation, the first conductive material forms a serpentine track.
摘要翻译：碳纳米管晶体管器件的集成电路布局包括第一和第二导电材料。第一导电材料连接到第一导电材料下方（或上方）的单壁碳纳米管的端部。第二导电材料不与第二导电材料的下方（或更上方）电连接到纳米管。第一导电材料可以是金属，第二导电材料可以是多晶硅或金属。纳米管垂直于第一导电材料。在一个实施方案中，第一和第二导电材料形成叉指。在另一实施方案中，第一导电材料形成蛇形轨迹。

2. 发明授权

US07943418B2 Removing undesirable nanotubes during nanotube device fabrication 失效
标题翻译：在纳米管器件制造过程中去除不需要的纳米管
公开(公告)号：US07943418B2
公开(公告)日：2011-05-17
申请号：US11467058
申请日：2006-08-24
申请人： Thomas W. Tombler, Jr.
发明人： Thomas W. Tombler, Jr.
IPC分类号： H01L51/40
CPC分类号： H01L51/057 , B82Y10/00 , B82Y40/00 , H01L51/0048
摘要： Fabricating single-walled carbon nanotube transistor devices includes removing undesirable types of nanotubes. These undesirable types of nanotubes may include nonsemiconducting nanotubes, multiwalled nanotubes, and others. The undesirable nanotubes may be removed electrically using voltage or current, or a combination of these. This approach to removing undesirable nanotubes is sometimes referred to as “burn-off.” The undesirable nanotubes may be removed chemically or using radiation. The undesirable nanotubes of an integrated circuit may be removed in sections or one transistor (or a group of transistors) at a time in order to reduce the electrical current used or prevent damage to the integrated circuit during burn-off.
摘要翻译：制造单壁碳纳米管晶体管器件包括去除不想要的类型的纳米管。这些不期望的类型的纳米管可以包括非半导体纳米管，多壁纳米管等。可以使用电压或电流或这些的组合来电除去不需要的纳米管。这种去除不需要的纳米管的方法有时被称为“燃烧”。不期望的纳米管可以化学去除或使用辐射。集成电路的不期望的纳米管可以在一段时间内去除部分或一个晶体管（或一组晶体管），以便减少所使用的电流或防止在烧坏期间对集成电路的损坏。

3. 发明授权

US07622732B1 Heterostructure nanotube devices 失效
标题翻译：异质结构纳米管器件
公开(公告)号：US07622732B1
公开(公告)日：2009-11-24
申请号：US11462497
申请日：2006-08-04
申请人： Thomas W. Tombler, Jr.
发明人： Thomas W. Tombler, Jr.
IPC分类号： H01L29/12 , H01L29/161 , H01L21/336 , D01F9/12
CPC分类号： H01L51/0048 , B82Y10/00 , H01L27/283 , H01L51/057 , Y10S257/90 , Y10S977/843 , Y10S977/938 , Y10S977/962
摘要： Heterostructure devices incorporate carbon nanotube technology to implement rectifying devices including diodes, rectifiers, silicon-controlled rectifiers, varistors, and thyristors. In a specific implementation, a rectifying device includes carbon nanotube and nanowire elements. The carbon nanotubes may be single-walled carbon nanotubes. The devices may be formed using parallel pores of a porous structure. The porous structure may be anodized aluminum oxide or another material. A device of the invention may be especially suited for high power applications.
摘要翻译：异质结构器件采用碳纳米管技术来实现整流器件，包括二极管，整流器，硅控整流器，变阻器和晶闸管。在具体实施方式中，整流装置包括碳纳米管和纳米线元件。碳纳米管可以是单壁碳纳米管。可以使用多孔结构的平行孔形成装置。多孔结构可以是阳极化氧化铝或另一种材料。本发明的装置可以特别适用于大功率应用。

4. 发明授权

US07926440B1 Nanostructure synthesis apparatus and method 失效
标题翻译：纳米结构合成装置及方法
公开(公告)号：US07926440B1
公开(公告)日：2011-04-19
申请号：US11288951
申请日：2005-11-28
申请人： Thomas W. Tombler, Jr. , Jon W. Lai , Brian Y. Lim , Borys Kolasa
发明人： Thomas W. Tombler, Jr. , Jon W. Lai , Brian Y. Lim , Borys Kolasa
IPC分类号： B05C13/00 , D01F9/133 , D01F9/127
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/15 , C23C16/4557 , C23C16/46 , C23C16/52
摘要： Apparatus and method for synthesizing nanostructures in a controlled process. An embodiment of the apparatus comprises a stage or substrate holder that is heated, e.g., resistively, and is the primary source of heating for the substrate for nanostructure synthesis. The substrate and substrate heater are enclosed in a chamber, e.g., a metal chamber, which is ordinarily at a lower temperature than are the substrate and substrate heater during synthesis. Some embodiments of the invention are particularly useful for chemical vapor deposition (CVD), low pressure CVD (LPCVD), metal organic CVD (MOCVD), and general vapor deposition techniques. Some embodiments of the present invention allow for in situ characterization and treatment of the substrate and nanostructures.
摘要翻译：在控制过程中合成纳米结构的装置和方法。该装置的一个实施例包括阶段或衬底保持器，其被加热，例如电阻地，并且是衬底用于纳米结构合成的主要加热源。衬底和衬底加热器封闭在例如金属室的室中，其通常在合成期间通常处于比衬底和衬底加热器更低的温度。本发明的一些实施例对于化学气相沉积（CVD），低压CVD（LPCVD），金属有机CVD（MOCVD）和一般气相沉积技术是特别有用的。本发明的一些实施方案允许原位表征和处理底物和纳米结构。

5. 发明授权

US07732290B2 Carbon nanotube transistor process with transferred carbon nanotubes 失效
标题翻译：碳纳米管晶体管工艺与转移碳纳米管
公开(公告)号：US07732290B2
公开(公告)日：2010-06-08
申请号：US11870897
申请日：2007-10-11
申请人： Thomas W. Tombler, Jr. , Brian Y. Lim
发明人： Thomas W. Tombler, Jr. , Brian Y. Lim
IPC分类号： H01L21/336
CPC分类号： H01L51/0048 , B82Y10/00 , H01L27/283 , H01L51/057 , Y10S257/90 , Y10S977/843 , Y10S977/938 , Y10S977/962
摘要： During fabrication of single-walled carbon nanotube transistor devices, a porous template with numerous parallel pores is used to hold the single-walled carbon nanotubes. The porous template or porous structure may be anodized aluminum oxide or another material. A gate region may be provided one end or both ends of the porous structure. The gate electrode may be formed and extend into the porous structure.
摘要翻译：在制造单壁碳纳米管晶体管器件期间，使用具有多个平行孔的多孔模板来保持单壁碳纳米管。多孔模板或多孔结构可以是阳极氧化的氧化铝或另一种材料。可以在多孔结构的一端或两端设置栅极区域。栅电极可以形成并延伸到多孔结构中。

6. 发明授权

US07648177B2 Apparatus and method for actuating or maintaining a seal by differential pressure 失效
标题翻译：用压差驱动或保持密封的装置和方法
公开(公告)号：US07648177B2
公开(公告)日：2010-01-19
申请号：US10654599
申请日：2003-09-02
申请人： Thomas W. Tombler, Jr. , Brian Y. Lim , Jon W. Lai
发明人： Thomas W. Tombler, Jr. , Brian Y. Lim , Jon W. Lai
IPC分类号： F16L17/02
CPC分类号： F16L17/10 , F16J15/164 , F16L2201/30 , Y10T29/49826
摘要： An apparatus that facilitates tight sealing between a first space and a second space. The second space is at least partially enclosed by a member. The apparatus includes or performs creating or maintaining a pressure difference between a pressure in a third space at a seal assembly and pressure in each of the first space and the second space; and pushing, caused by the pressure difference, against a seal in the seal assembly to tighten sealing provided by the seal.
摘要翻译：一种促进第一空间和第二空间之间的密封的装置。第二个空间至少部分地由一个成员封闭。该设备包括或执行在密封组件中的第三空间中的压力和第一空间和第二空间中的每一个中的压力之间产生或维持压力差; 并且由压力差引起的压力抵靠密封组件中的密封件以紧固由密封件提供的密封。

7. 发明授权

US07736943B2 Carbon nanotube transistor fabrication 失效
标题翻译：碳纳米管晶体管制造
公开(公告)号：US07736943B2
公开(公告)日：2010-06-15
申请号：US11870872
申请日：2007-10-11
申请人： Thomas W. Tombler, Jr. , Brian Y. Lim
发明人： Thomas W. Tombler, Jr. , Brian Y. Lim
IPC分类号： H01L21/44
CPC分类号： H01L51/0048 , B82Y10/00 , H01L27/283 , H01L51/057 , Y10S257/90 , Y10S977/843 , Y10S977/938 , Y10S977/962
摘要： During fabrication of single-walled carbon nanotube transistor devices, a porous template with numerous parallel pores is used to hold the single-walled carbon nanotubes. The porous template or porous structure may be anodized aluminum oxide or another material. A gate region may be provided one end or both ends of the porous structure. The gate electrode may be formed and extend into the porous structure.
摘要翻译：在制造单壁碳纳米管晶体管器件期间，使用具有多个平行孔的多孔模板来保持单壁碳纳米管。多孔模板或多孔结构可以是阳极氧化的氧化铝或另一种材料。可以在多孔结构的一端或两端设置栅极区域。栅电极可以形成并延伸到多孔结构中。

8. 发明授权

US07607321B2 Apparatus and method for single-sided loading of a furnace or other process station 失效
标题翻译：用于单面装载炉或其他处理站的装置和方法
公开(公告)号：US07607321B2
公开(公告)日：2009-10-27
申请号：US10773755
申请日：2004-02-06
申请人： Jon W. Lai , Thomas W. Tombler, Jr. , Brian Y. Lim
发明人： Jon W. Lai , Thomas W. Tombler, Jr. , Brian Y. Lim
IPC分类号： C03B23/00
CPC分类号： F27D3/06 , F27B17/02
摘要： Solutions permit or facilitate faster and/or easier processing involving loading or unloading of a work module into a process station. For example, the work module may be a processing tube or the like and the process station may be a heating station such as a tube furnace or the like. In one embodiment, the loading is from a single side of a process station. In one embodiment, the work module includes inlets and outlets for fluid flow, with both inlets and outlets being closer toward one side of the work module than the other side.
摘要翻译：解决方案允许或促进将工作模块加载或卸载到处理站中的更快和/或更容易的处理。例如，工作模块可以是处理管等，并且处理站可以是诸如管式炉等的加热站。在一个实施例中，加载来自处理站的单个侧面。在一个实施例中，工作模块包括用于流体流动的入口和出口，两个入口和出口比另一侧更靠近工作模块的一侧。

9. 发明授权

US07345296B2 Nanotube transistor and rectifying devices 失效
标题翻译：纳米管晶体管和整流装置
公开(公告)号：US07345296B2
公开(公告)日：2008-03-18
申请号：US11162548
申请日：2005-09-14
申请人： Thomas W. Tombler, Jr. , Brian Y. Lim
发明人： Thomas W. Tombler, Jr. , Brian Y. Lim
IPC分类号： H01L29/06 , H01L29/08 , H01L29/80 , H01L21/336 , H01L21/76
CPC分类号： H01L51/0048 , B82Y10/00 , H01L27/283 , H01L51/057 , Y10S257/90 , Y10S977/843 , Y10S977/938 , Y10S977/962
摘要： Single-walled carbon nanotube transistor and rectifying devices, and associated methods of making such devices include a porous structure for the single-walled carbon nanotubes. The porous structure may be anodized aluminum oxide or another material. Electrodes for source and drain of a transistor are provided at opposite ends of the single-walled carbon nanotube devices. A gate region may be provided one end or both ends of the porous structure. The gate electrode may be formed into the porous structure. A transistor of the invention may be especially suited for power transistor or power amplifier applications.
摘要翻译：单壁碳纳米管晶体管和整流装置以及制造这种器件的相关方法包括用于单壁碳纳米管的多孔结构。多孔结构可以是阳极化氧化铝或另一种材料。用于晶体管的源极和漏极的电极设置在单壁碳纳米管器件的相对端。可以在多孔结构的一端或两端设置栅极区域。栅电极可以形成为多孔结构。本发明的晶体管可以特别适用于功率晶体管或功率放大器应用。

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