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2. 发明授权

US4518979A Semiconductor transistor with graded base and collector 失效
标题翻译：具有分级基极和集电极的半导体晶体管
公开(公告)号：US4518979A
公开(公告)日：1985-05-21
申请号：US393923
申请日：1982-06-30
申请人： William P. Dumke , Jerry M. P. Woodall
发明人： William P. Dumke , Jerry M. P. Woodall
IPC分类号： H01L31/10 , H01L29/737 , H01L31/11 , H01L31/18 , H01L27/14
CPC分类号： H01L31/1844 , H01L29/7371 , H01L31/1105 , Y02E10/544
摘要： A semiconductor processor for signals such as are conveyed by fiber optics wherein the processor structure accommodates lattice mismatch and minimizes the effect of misfit dislocations. The structure permits using materials having favorable absorption properties at the 1 micrometer wavelength of optical signals. A binary semiconductor is employed with graded regions produced by adding a different third ingredient in two places so that a wide band optically transparent emitter with a graded base and graded collector are provided. The ingredients impart a strong absorption in the optical signal wavelength together with superior semiconductor carrier transit time. A structure for a silicon and germanium oxide based optical signal fiber uses a GaAlAs emitter, a base that is graded to Ga.sub.0.25 In.sub.0.75 As at the collector and then back to GaAs at the substrate.
摘要翻译：用于诸如由光纤传送的信号的半导体处理器，其中处理器结构适应晶格失配并且使失配位错的影响最小化。该结构允许使用在1微米波长的光信号上具有良好吸收特性的材料。二元半导体被用于通过在两个位置添加不同的第三成分而产生的分级区域，从而提供具有渐变基极和分级集电极的宽带光学透明发射体。这些成分赋予光信号波长强的吸收以及优异的半导体载体传输时间。用于基于硅和锗氧化物的光信号光纤的结构使用GaAlAs发射极，其在集电极处分级为Ga 0.25 In 0.75 As，然后在衬底处回到GaAs。

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