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1. 发明授权

US5048038A Ion-implanted planar-buried-heterostructure diode laser 失效
标题翻译：离子注入平面埋置异质结二极管激光器
公开(公告)号：US5048038A
公开(公告)日：1991-09-10
申请号：US469996
申请日：1990-01-25
申请人： Thomas M. Brennan , Burrell E. Hammons , David R. Myers , Gregory A. Vawter
发明人： Thomas M. Brennan , Burrell E. Hammons , David R. Myers , Gregory A. Vawter
IPC分类号： H01S5/20 , H01S5/227 , H01S5/32 , H01S5/34
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/227 , H01S5/2059 , H01S5/2275 , H01S5/3211 , H01S5/3215 , H01S5/3409 , H01S5/3428
摘要： A Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding layer 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an ion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.
摘要翻译：平面埋置异质结构，分级折射率，分离限制 - 异质结半导体二极管激光器10包括设置在p型组成梯度III-V族包层14和第二组III-V包层14之间的单量子阱或多量子阱有源条纹12。 n型成分分级的III-V族包层16.激光器10包括在p型包层14内的离子注入的n型区域28，并且在n型包层内还包括离子注入的p型区域26 离子注入区域被设置用于限定活性条纹的横向范围。

2. 发明授权

US5102825A Method of making an ion-implanted planar-buried-heterostructure diode laser 失效
标题翻译：制造离子注入平面埋置异质结构二极管激光器的方法
公开(公告)号：US5102825A
公开(公告)日：1992-04-07
申请号：US676486
申请日：1991-03-28
申请人： Thomas M. Brennan , Burrell E. Hammons , David R. Myers , Gregory A. Vawter
发明人： Thomas M. Brennan , Burrell E. Hammons , David R. Myers , Gregory A. Vawter
IPC分类号： H01S5/20 , H01S5/227 , H01S5/32 , H01S5/34
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/227 , H01S5/2059 , H01S5/2275 , H01S5/3211 , H01S5/3215 , H01S5/3409 , H01S5/3428 , Y10S148/095
摘要： Planar-buried-heterostructure, graded-index, separate-confinement-heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding lever 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an iion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.
摘要翻译：平面埋置异质结构，分级折射率，分离约束异质结半导体二极管激光器10包括设置在p型成分分级的III-V族包层杆14和n型组合之间的单量子阱或多量子阱有源条12 型成分分级的III-V族包层16.激光器10包括在p型包层14内的注入n型区域28，并且在n型包覆层内还包括离子注入的p型区域26 设置离子注入区域以限定活性条纹的横向范围。

3. 发明授权

US4470603A Archery target 失效
标题翻译：射箭目标
公开(公告)号：US4470603A
公开(公告)日：1984-09-11
申请号：US477757
申请日：1983-03-22
申请人： David R. Myers
发明人： David R. Myers
IPC分类号： F41J3/00 , F41J7/04
CPC分类号： F41J3/0004 , F41J7/04
摘要： A silhouette archery target includes one or more support legs which are supportably received in respective support holes in a base member. The legs and holes are cross-sectionally configured to preclude rotation of the leg in the hole. A rear pivot block is secured to the leg at the base member top surface and has a rearward bottom edge which is located below the center of gravity of the target and serves as a target pivot axis. The forward-facing side of the leg is cut away from just below the top surface of the base member in a manner which permits backward rotation of the target and leg out of the support hole and about the target pivot axis. By selecting the front-to-back depth dimension of the pivot block, one can select the required impact force which causes the target to rotate out of the support hole and topple over. A forward bias block is secured to the leg at the base member top surface to prevent wind directed at the back of the target from toppling the target out of the base member. The blocks may be magnetically or otherwise secured to the leg to permit interchange of different sized blocks and thereby adjust the sensitivity of the target to both arrow impact and wind.
摘要翻译：剪影射箭靶包括一个或多个支撑腿，其可支撑地容纳在基座构件中的相应支撑孔中。腿和孔的横截面构造以防止腿在孔中的旋转。后枢转块在基部构件顶表面处固定到腿部，并且具有位于靶的重心下方并用作目标枢转轴线的后底边缘。腿部的前向侧以允许目标和腿部从支撑孔和关于目标枢转轴线向后旋转的方式从基部构件的顶表面的正下方切割。通过选择枢轴块的前后深度尺寸，可以选择所需的冲击力，使冲击力使目标从支撑孔旋出并倾倒。正向偏置块在基部构件顶表面处固定到腿部，以防止指向目标物后部的风将目标物从基部构件翻倒。块可以磁性地或以其他方式固定到腿部，以允许不同大小的块的交换，从而调整目标对箭头冲击和风的敏感性。

4. 发明授权

US5092957A Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching 失效
标题翻译：使用光化学蚀刻的半导体的载流子寿命控制选择性蚀刻工艺
公开(公告)号：US5092957A
公开(公告)日：1992-03-03
申请号：US441025
申请日：1989-11-24
申请人： Carol I. H. Ashby , David R. Myers
发明人： Carol I. H. Ashby , David R. Myers
IPC分类号： H01L21/306 , H01L21/3065 , H01L21/465
CPC分类号： H01L21/30604 , H01L21/30612 , H01L21/30621 , H01L21/3065 , H01L21/465
摘要： The minority carrier lifetime is significantly much shorter in semiconductor materials with very high impurity concentrations than it is in semiconductor materials with lower impurity concentration levels. This phenomenon of reduced minority carrier lifetime in semiconductor materials having high impurity concentration is utilized to advantage for permitting highly selective semiconductor material etching to be achieved using a carrier-driven photochemical etching reaction. Various means may be employed for increasing the local impurity concentration level in specific near-surface regions of a semiconductor prior to subjecting the semiconductor material to a carrier-driven photochemical etching reaction. The regions having the localized increased impurity concentration form a self-aligned mask inhibiting photochemical etching at such localized regions while the adjacent regions not having increased impurity concentrations are selectively photochemically etched. Liquid- or gas-phase etching may be performed.
摘要翻译：与具有较低杂质浓度水平的半导体材料相比，杂质浓度非常高的半导体材料的少数载流子寿命明显短得多。利用具有高杂质浓度的半导体材料中的少数载流子寿命降低的现象被用于允许使用载流子驱动的光化学蚀刻反应来实现高选择性半导体材料蚀刻。在半导体材料进行载流子驱动的光化学蚀刻反应之前，可以采用各种方法来增加半导体的特定近表面区域中的局部杂质浓度水平。具有局部增加的杂质浓度的区域形成抑制这种局部区域的光化学蚀刻的自对准掩模，而不增加杂质浓度的相邻区域被选择性光刻蚀刻。可以进行液相或气相蚀刻。

5. 发明授权

US5449945A Silicon metal-semiconductor-metal photodetector 失效
标题翻译：硅金属 - 半导体 - 金属光电探测器
公开(公告)号：US5449945A
公开(公告)日：1995-09-12
申请号：US4803
申请日：1993-01-15
申请人： Steven R. J. Brueck , David R. Myers , Ashwani K. Sharma
发明人： Steven R. J. Brueck , David R. Myers , Ashwani K. Sharma
IPC分类号： H01L31/108 , H01L27/14 , H01L29/48
CPC分类号： H01L31/1085
摘要： Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.
摘要翻译：通过改变通过离子注入的晶体Si的吸收特性来产生在可见光到近红外光谱范围内对辐射敏感的硅MSM光电二极管。注入在硅的表面下方产生缺陷区域，其底部具有最高的缺陷浓度，其作用是减少形成在缺陷层下方的电荷载流子的贡献。由缺陷层的上部区域中的辐射产生的电荷载体在形成用于光电二极管的金属 - 半导体 - 金属结构的偏置肖特基势垒电极之间非常快速地收集。

6. 外观设计

USD271731S Folding wall-mounted seat 失效
公开(公告)号：USD271731S
公开(公告)日：1983-12-13
申请号：US307175
申请日：1981-09-30
申请人： Michael J. Chamberlain , David R. Myers , Donald R. Furlong
设计人： Michael J. Chamberlain , David R. Myers , Donald R. Furlong

7. 发明授权

US08026485B2 Chitin-based cantilever bimorphs and readout devices 有权
标题翻译：基于壳多糖的悬臂双压电晶片和读出装置
公开(公告)号：US08026485B2
公开(公告)日：2011-09-27
申请号：US12725115
申请日：2010-03-16
申请人： Michael T. Mueller , Albert P. Pisano , Robert Azevedo , David C. Walther , David R. Myers , Matthew Wasilik
发明人： Michael T. Mueller , Albert P. Pisano , Robert Azevedo , David C. Walther , David R. Myers , Matthew Wasilik
IPC分类号： G01J5/20
CPC分类号： G01J5/40
摘要： An infrared sensor with at least one cantilever beam functionalized with chitin, chitosan or their derivatives that can be tailored to be sensitive to certain IR bands for detection and does not require cooling is described. The functional layers expand differently than the structural layer of the cantilever beam causing the beam to bend in response to exposure to infrared radiation. The sensor can be adapted to optical, piezoresistive, capacitive and piezoelectric methods of detect beam deflection. Sensitivity can be increased with a reflective layer to increase the absorption of infrared radiation by the functional layer.
摘要翻译：一种红外传感器，其具有至少一个功能化的甲壳质，壳聚糖或其衍生物的悬臂梁，其可被定制为对某些IR带进行检测并且不需要冷却是敏感的。功能层与悬臂梁的结构层不同地扩展，导致光束响应于暴露于红外辐射而弯曲。该传感器可适用于检测光束偏转的光学，压阻，电容和压电方法。可以用反射层增加灵敏度，以增加功能层对红外辐射的吸收。

8. 发明授权

US4866498A Integrated circuit with dissipative layer for photogenerated carriers 失效
标题翻译：具有消光层的集成电路，用于光电载体
公开(公告)号：US4866498A
公开(公告)日：1989-09-12
申请号：US183807
申请日：1988-04-20
申请人： David R. Myers
发明人： David R. Myers
IPC分类号： H01L27/105
CPC分类号： H01L27/105 , Y10S257/906
摘要： The sensitivity of an integrated circuit to single-event upsets is decreased by providing a dissiThe U.S. Government has rights in this invention pursuant to Contract No. DE-ACO4-76DP00789 between the Department of Energy and AT&T Technologies, Inc.
摘要翻译：通过在硅衬底和有源器件之间提供氮化硅的耗散层，降低了集成电路对单事件抖动的灵敏度。在衬底之间产生的自由载流子在它们可以在有源器件上建立电荷之前被层消散。

9. 发明授权

US4746189A Optical fiber adhesive joint tube 失效
标题翻译：光纤胶接头管
公开(公告)号：US4746189A
公开(公告)日：1988-05-24
申请号：US787951
申请日：1985-10-16
申请人： John P. Arrington , Nelson M. Shen , Wendell W. Moyer , David R. Myers , David E. James
发明人： John P. Arrington , Nelson M. Shen , Wendell W. Moyer , David R. Myers , David E. James
IPC分类号： G02B6/38
CPC分类号： G02B6/3801 , G02B6/3803
摘要： An article suitable for use in the adhesive joining of two optical fibers with low light loss comprises a tubular container an inner surface of which is coated with a release agent and/or is composed of an inherently releasing material, which is larger in cross-section at the ends than at a central region, the smaller central region being where the ends of the fibers are joined.
摘要翻译：适合用于低光损失的两根光纤的粘合剂接合的制品包括管状容器，其内表面涂覆有脱模剂和/或由固有释放材料构成，其横截面较大在端部处比在中心区域处，较小的中心区域是纤维的端部连接的位置。

10. 发明申请

US20100243904A1 CHITIN-BASED CANTILEVER BIMORPHS AND READOUT DEVICES 有权
标题翻译：基于CHITIN的CANTILEVER BIMORPHS和READOUT设备
公开(公告)号：US20100243904A1
公开(公告)日：2010-09-30
申请号：US12725115
申请日：2010-03-16
申请人： Michael T. Mueller , Albert P. Pisano , Robert Azevedo , David C. Walther , David R. Myers , Matthew Wasilik
发明人： Michael T. Mueller , Albert P. Pisano , Robert Azevedo , David C. Walther , David R. Myers , Matthew Wasilik
IPC分类号： G01J5/02 , G01J5/10 , G01J5/00 , G01J5/34 , G01J5/08
CPC分类号： G01J5/40
摘要： An infrared sensor with at least one cantilever beam functionalized with chitin, chitosan or their derivatives that can be tailored to be sensitive to certain IR bands for detection and does not require cooling is described. The functional layers expand differently than the structural layer of the cantilever beam causing the beam to bend in response to exposure to infrared radiation. The sensor can be adapted to optical, piezoresistive, capacitive and piezoelectric methods of detect beam deflection. Sensitivity can be increased with a reflective layer to increase the absorption of infrared radiation by the functional layer.
摘要翻译：一种红外传感器，其具有至少一个功能化的甲壳质，壳聚糖或其衍生物的悬臂梁，其可被定制为对某些IR带进行检测并且不需要冷却是敏感的。功能层与悬臂梁的结构层不同地扩展，导致光束响应于暴露于红外辐射而弯曲。该传感器可适用于检测光束偏转的光学，压阻，电容和压电方法。可以用反射层增加灵敏度，以增加功能层对红外辐射的吸收。

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