专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07732301B1 Bonded intermediate substrate and method of making same 有权
标题翻译：粘合中间基材及其制备方法
公开(公告)号：US07732301B1
公开(公告)日：2010-06-08
申请号：US12081702
申请日：2008-04-18
申请人： Thomas Henry Pinnington , James M. Zahler , Young-Bae Park , Corinne Ladous , Sean Olson
发明人： Thomas Henry Pinnington , James M. Zahler , Young-Bae Park , Corinne Ladous , Sean Olson
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46 , H01L21/28 , H01L21/44
CPC分类号： H01L21/2654 , H01L21/76254 , H01L33/0079 , H01L2924/0002 , H01L2924/00
摘要： A method of making a bonded intermediate substrate includes forming a weak interface in a GaN source substrate by implanting ions into an N-terminated surface of the GaN source substrate, bonding the N-terminated surface of the GaN source substrate to a handle substrate, and exfoliating a thin GaN single crystal layer from the source substrate such that the thin GaN exfoliated single crystal layer remains bonded to the handle substrate and a Ga-terminated surface of the thin GaN single crystal layer is exposed. The method further includes depositing a capping layer directly onto the exposed surface of the thin GaN single crystal layer, and annealing the thin GaN single crystal layer in a nitrogen containing atmosphere after depositing the capping layer. The in-plane strain present in the thin GaN single crystal layer after the annealing is reduced relative to an in-plane strain present in said layer prior to the annealing.
摘要翻译：制造粘合的中间衬底的方法包括：通过将离子注入到GaN源衬底的N端接表面中，在GaN源衬底中形成弱界面，将GaN源极衬底的N端接表面接合到处理衬底上，以及从源极衬底剥离薄的GaN单晶层，使得薄的GaN剥离的单晶层保持结合到手柄衬底，并且暴露出薄的GaN单晶层的Ga封端的表面。该方法还包括将覆盖层直接沉积到薄GaN单晶层的暴露表面上，并且在沉积覆盖层之后在含氮气氛中退火薄GaN单晶层。在退火之前，存在于薄GaN单晶层中的面内应变相对于退火前存在于所述层中的面内应变而降低。

2. 发明申请

US20090278233A1 BONDED INTERMEDIATE SUBSTRATE AND METHOD OF MAKING SAME 审中-公开
标题翻译：粘结的中间基底及其制造方法
公开(公告)号：US20090278233A1
公开(公告)日：2009-11-12
申请号：US12178838
申请日：2008-07-24
申请人： Thomas Henry PINNINGTON , James M. Zahler , Young-Bae Park , Corinne Ladous , Sean Olson
发明人： Thomas Henry PINNINGTON , James M. Zahler , Young-Bae Park , Corinne Ladous , Sean Olson
IPC分类号： H01L29/20 , H01L21/20 , H01L29/30
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/0262 , H01L21/02658 , H01L21/76254 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A method includes growing a first epitaxial layer of III-nitride material, forming a damaged region by implanting ions into an exposed surface of the first epitaxial layer, and growing a second epitaxial layer of III-nitride material on the exposed surface of the first epitaxial layer. A level of defects present in the second epitaxial layer is less than a level of defects present in the first epitaxial layer.
摘要翻译：一种方法包括生长III族氮化物材料的第一外延层，通过将离子注入到第一外延层的暴露表面中形成损伤区域，以及在第一外延层的暴露表面上生长III族氮化物材料的第二外延层层。存在于第二外延层中的缺陷水平小于存在于第一外延层中的缺陷水平。

3. 发明授权

US08101498B2 Bonded intermediate substrate and method of making same 有权
标题翻译：粘合中间基材及其制备方法
公开(公告)号：US08101498B2
公开(公告)日：2012-01-24
申请号：US11408239
申请日：2006-04-21
申请人： Thomas Henry Pinnington , James M. Zahler , Young-Bae Park , Charles Tsai , Corinne Ladous , Harry A. Atwater, Jr. , Sean Olson
发明人： Thomas Henry Pinnington , James M. Zahler , Young-Bae Park , Charles Tsai , Corinne Ladous , Harry A. Atwater, Jr. , Sean Olson
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L33/0079 , B82Y20/00 , H01L21/2007 , H01L33/145 , H01L33/32 , H01L33/405 , H01L2924/0002 , H01L2924/00
摘要： An intermediate substrate includes a handle substrate bonded to a thin layer suitable for epitaxial growth of a compound semiconductor layer, such as a III-nitride semiconductor layer. The handle substrate may be a metal or metal alloy substrate, such as a molybdenum or molybdenum alloy substrate, while the thin layer may be a sapphire layer. A method of making the intermediate substrate includes forming a weak interface in the source substrate, bonding the source substrate to the handle substrate, and exfoliating the thin layer from the source substrate such that the thin layer remains bonded to the handle substrate.
摘要翻译：中间基板包括结合到适合于诸如III族氮化物半导体层的化合物半导体层的外延生长的薄层的手柄基板。手柄基板可以是金属或金属合金基板，例如钼或钼合金基板，而薄层可以是蓝宝石层。制造中间基板的方法包括在源极基板中形成弱界面，将源极基板接合到手柄基板，以及将薄层从源极基板剥离，使得薄层保持结合到手柄基板上。

4. 发明申请

US20110117726A1 BONDED INTERMEDIATE SUBSTRATE AND METHOD OF MAKING SAME 审中-公开
标题翻译：粘结的中间基底及其制造方法
公开(公告)号：US20110117726A1
公开(公告)日：2011-05-19
申请号：US13012336
申请日：2011-01-24
申请人： Thomas Henry Pinnington , James M. Zahler , Young-Bae Park , Corinne Ladous , Sean Olson
发明人： Thomas Henry Pinnington , James M. Zahler , Young-Bae Park , Corinne Ladous , Sean Olson
IPC分类号： H01L21/30
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/0262 , H01L21/02658 , H01L21/76254 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A method includes growing a first epitaxial layer of III-nitride material, forming a damaged region by implanting ions into an exposed surface of the first epitaxial layer, and growing a second epitaxial layer of III-nitride material on the exposed surface of the first epitaxial layer. A level of defects present in the second epitaxial layer is less than a level of defects present in the first epitaxial layer.
摘要翻译：一种方法包括生长III族氮化物材料的第一外延层，通过将离子注入到第一外延层的暴露表面中形成损伤区域，以及在第一外延层的暴露表面上生长III族氮化物材料的第二外延层层。存在于第二外延层中的缺陷水平小于存在于第一外延层中的缺陷水平。

5. 发明申请

US20060255341A1 Bonded intermediate substrate and method of making same 有权
标题翻译：粘合中间基材及其制备方法
公开(公告)号：US20060255341A1
公开(公告)日：2006-11-16
申请号：US11408239
申请日：2006-04-21
申请人： Thomas Pinnington , James Zahler , Young-Bae Park , Charles Tsai , Corinne Ladous , Harry Atwater , Sean Olson
发明人： Thomas Pinnington , James Zahler , Young-Bae Park , Charles Tsai , Corinne Ladous , Harry Atwater , Sean Olson
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , B82Y20/00 , H01L21/2007 , H01L33/145 , H01L33/32 , H01L33/405 , H01L2924/0002 , H01L2924/00
摘要： An intermediate substrate includes a handle substrate bonded to a thin layer suitable for epitaxial growth of a compound semiconductor layer, such as a III-nitride semiconductor layer. The handle substrate may be a metal or metal alloy substrate, such as a molybdenum or molybdenum alloy substrate, while the thin layer may be a sapphire layer. A method of making the intermediate substrate includes forming a weak interface in the source substrate, bonding the source substrate to the handle substrate, and exfoliating the thin layer from the source substrate such that the thin layer remains bonded to the handle substrate.
摘要翻译：中间基板包括结合到适合于诸如III族氮化物半导体层的化合物半导体层的外延生长的薄层的手柄基板。手柄基板可以是金属或金属合金基板，例如钼或钼合金基板，而薄层可以是蓝宝石层。制造中间基板的方法包括在源极基板中形成弱界面，将源极基板接合到手柄基板，以及将薄层从源极基板剥离，使得薄层保持结合到手柄基板上。

6. 发明授权

US09001541B2 Switch control circuit, power factor corrector including the same, and driving method of the power factor corrector 有权
标题翻译：开关控制电路，功率因数校正器包括相同的功率因数校正器和驱动方法
公开(公告)号：US09001541B2
公开(公告)日：2015-04-07
申请号：US13584408
申请日：2012-08-13
申请人： Gye-Hyun Cho , Hyun-Chul Eom , Seunguk Yang , Young-Bae Park
发明人： Gye-Hyun Cho , Hyun-Chul Eom , Seunguk Yang , Young-Bae Park
IPC分类号： H02M7/539 , H02M1/42
CPC分类号： H02M1/4258 , H02M1/4208 , Y02B70/126 , Y02P80/112
摘要： The present invention relates to a switch control circuit, a power factor corrector including the same, and a driving method thereof. According to an exemplary embodiment of the present invention, a turn-on time of a power switch is controlled according to a zero crossing voltage to sense a voltage of both terminals of the power switch, and a turn-off time of the power switch is controlled according to a feedback voltage corresponding to the output voltage. At this time, the switching frequency of the power switch is sensed by the zero crossing voltage and the switching frequency is restricted by a predetermined threshold frequency.
摘要翻译：本发明涉及开关控制电路，包括该开关控制电路的功率因数校正器及其驱动方法。根据本发明的示例性实施例，根据过零电压来控制电源开关的接通时间以感测电源开关的两端的电压，并且电源开关的关断时间为根据与输出电压对应的反馈电压进行控制。此时，电源开关的开关频率由过零电压感测，开关频率被限制在预定的阈值频率。

7. 发明申请

US20130329150A1 COLUMN SPACER DESIGN FOR A DISPLAY INCORPORATING A THIRD METAL LAYER 有权
标题翻译：用于展示第三金属层的显示器的圆柱形空间设计
公开(公告)号：US20130329150A1
公开(公告)日：2013-12-12
申请号：US13605918
申请日：2012-09-06
申请人： Kyung-Wook KIM , Shih Chang Chang , Cheng Chen , Young-Bae Park , John Z. Zhong
发明人： Kyung-Wook KIM , Shih Chang Chang , Cheng Chen , Young-Bae Park , John Z. Zhong
IPC分类号： G02F1/136 , H01L33/08
CPC分类号： G02F1/13394 , G02F1/13338 , G02F1/133514 , G02F1/134309 , G02F1/134363 , G02F1/13439 , G02F1/136286 , G02F1/1368 , G02F2001/133302 , G02F2001/13396 , G02F2001/134372 , G02F2201/121 , G02F2201/123 , G06F3/0412 , G06F3/044
摘要： A display that contains a column spacer arrangement which takes advantage of a protrusion on a TFT substrate is provided. One set of column spacers is disposed on top of the protrusion, while a second set of column spacers of substantially the same height as the first set of column spacers are disposed throughout the display. In this way, the display is adequately protected against deformation from external forces while at the same maintaining enough room to allow for a liquid crystal to spread out during the manufacturing process.
摘要翻译：提供了包含利用TFT基板上的突起的柱间隔件布置的显示器。一组柱间隔件设置在突起的顶部上，而在整个显示器上设置与第一组柱间隔件基本上相同高度的第二组柱间隔物。以这种方式，显示器被充分地保护免受来自外部力的变形，同时保持足够的空间以允许液晶在制造过程中展开。

8. 发明授权

US08395715B2 Displays with minimized crosstalk 有权
标题翻译：显示最小的串扰
公开(公告)号：US08395715B2
公开(公告)日：2013-03-12
申请号：US12975284
申请日：2010-12-21
申请人： Cheng Ho Yu , Ming Xu , Young-Bae Park , Zhibing Ge , Daisuke Nozu , Cheng Chen , Abbas Jamshidi Roudbari , Shih Chang Chang , Shawn R. Gettemy
发明人： Cheng Ho Yu , Ming Xu , Young-Bae Park , Zhibing Ge , Daisuke Nozu , Cheng Chen , Abbas Jamshidi Roudbari , Shih Chang Chang , Shawn R. Gettemy
IPC分类号： G02F1/141 , G02F1/133
CPC分类号： G09G3/18 , G02F1/13338 , G02F2001/134318 , G09G3/3648 , G09G3/3655 , G09G2300/043 , G09G2310/0224 , G09G2310/0283 , G09G2320/0209
摘要： Display ground plane structures may contain slits. Image pixel electrodes in the display may be arranged in rows and columns. Image pixels in the display may be controlled using gate lines that are associated with the rows and data lines that are associated with the columns. An electric field may be produced by each image pixel electrode that extends through a liquid crystal layer to an associated portion of the ground plane. The slits in the ground plane may have a slit width. Data lines may be located sufficiently below the ground plane and sufficiently out of alignment with the slits to minimize crosstalk from parasitic electric fields. A three-column inversion scheme may be used when driving data line signals into the display, so that pairs of pixels that straddle the slits are each driven with a common polarity. Gate line scanning patterns may be used that enhance display uniformity.
摘要翻译：显示接地平面结构可能包含狭缝。显示器中的图像像素电极可以以行和列布置。可以使用与与列相关联的行和数据行相关联的门线来控制显示器中的图像像素。可以通过延伸穿过液晶层的每个图像像素电极产生电场到接地平面的相关部分。接地平面中的狭缝可以具有狭缝宽度。数据线可以充分地位于接地平面的下方，并且与狭缝充分地不对齐，以使来自寄生电场的串扰最小化。当将数据线信号驱动到显示器中时，可以使用三列反转方案，使得跨越狭缝的像素对各自以共同的极性驱动。可以使用增强显示均匀性的栅极线扫描图案。

9. 发明授权

US08174961B2 Switch control device 失效
标题翻译：开关控制装置
公开(公告)号：US08174961B2
公开(公告)日：2012-05-08
申请号：US11804468
申请日：2007-05-18
申请人： Gwan-Bon Koo , Young-Bae Park , Sung-Won Yun
发明人： Gwan-Bon Koo , Young-Bae Park , Sung-Won Yun
IPC分类号： H04J7/00 , H03M3/00 , H03K7/08
CPC分类号： H03K17/0822 , H03K2017/0806
摘要： The present invention relates to a switch controlling apparatus. The switch controlling apparatus controls a main switch by using a first signal that corresponds to a current flowing to the main switch. The switch controlling apparatus includes a PWM controller for generating a control signal to control turning on/off of the main switch by using the first signal and a clock signal, and a TSD unit for changing the control signal corresponding to heat generated from the main switch. The TSD unit changes a response speed for the heat of the main switch by using the clock signal and the control signal.
摘要翻译：开关控制装置技术领域本发明涉及开关控制装置。开关控制装置通过使用与流过主开关的电流对应的第一信号来控制主开关。开关控制装置包括：PWM控制器，用于通过使用第一信号和时钟信号产生控制主开关的导通/截止的控制信号;以及TSD单元，用于改变与从主开关产生的热相对应的控制信号。 TSD单元通过使用时钟信号和控制信号来改变主开关的热量的响应速度。

10. 发明申请

US20110256626A1 METHOD FOR PRODUCING INDUCED PLURIPOTENT STEM CELLS WITH HIGH EFFICIENCY AND INDUCED POLURIPOTENT STEM CELLS PROUCED THEREBY 有权
标题翻译：用于生产具有高效率和诱导性的潜在干细胞的诱导型脑干细胞的方法
公开(公告)号：US20110256626A1
公开(公告)日：2011-10-20
申请号：US13120331
申请日：2010-09-17
申请人： Young-Bae Park , Hyo-Soo Kim , Yoo-Wook Kwon , Hyun-Jai Cho , Jae-Seung Paek
发明人： Young-Bae Park , Hyo-Soo Kim , Yoo-Wook Kwon , Hyun-Jai Cho , Jae-Seung Paek
IPC分类号： C12N5/071
CPC分类号： C12N5/16 , C12N5/0696 , C12N2500/44 , C12N2500/84 , C12N2501/235 , C12N2506/00
摘要： The present invention provides a method for producing customized pluripotent stem cells. Specifically, the present invention comprises following steps: extracting proteins from any of the dedifferentiated stem cells or induced pluripotent stem cells, the said dedifferentiated or pluripotent stem cells being prepared by any known method; introducing the protein extract into the adult somatic cells; and culturing the adult somatic cells to produce pluripotent stem cells having the same pluripotency as that of embryonic stem cells. In addition, pluripotent stem cells produced according to the present method and cell therapeutics comprising the same are provided. The method allows pluripotent stem cells to be produced very easily and at a significantly higher yield, compared to typical methods.
摘要翻译：本发明提供一种生产定制多能干细胞的方法。具体地说，本发明包括以下步骤：从任何去分化干细胞或诱导多能干细胞中提取蛋白质，所述去分化或多能干细胞通过任何已知方法制备; 将蛋白质提取物引入成体体细胞; 并培养成体细胞以产生具有与胚胎干细胞相同多能性的多能干细胞。此外，提供了根据本发明方法产生的多能干细胞和包含其的细胞治疗剂。与典型的方法相比，该方法允许非常容易地和以显着更高的产量制造多能干细胞。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式