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1. 发明授权

US5407710A Laser interconnection of circuits on transparent substrate 失效
标题翻译：电路在透明基板上的激光互连
公开(公告)号：US5407710A
公开(公告)日：1995-04-18
申请号：US101653
申请日：1993-08-04
申请人： Thomas H. Baum , Paul B. Comita , Carl E. Larson , George W. Tyndall, III
发明人： Thomas H. Baum , Paul B. Comita , Carl E. Larson , George W. Tyndall, III
IPC分类号： G02F1/1343 , C23C16/04 , G02F1/13 , H05K3/14 , H05K3/22 , H05K3/32 , B05D3/06
CPC分类号： H05K3/146 , C23C16/047 , G02F1/1309
摘要： The present invention relates to a method for the interconnection/repair of circuits on a transparent substrate at ambient temperature using laser induced chemical vapor deposition.
摘要翻译：本发明涉及使用激光诱导化学气相沉积在环境温度下在透明基板上互连/修复电路的方法。

2. 发明授权

US5525392A Magnetic recording medium having a fluorinated polymeric protective layer formed by an ion beam 失效
标题翻译：具有由离子束形成的氟化聚合物保护层的磁记录介质
公开(公告)号：US5525392A
公开(公告)日：1996-06-11
申请号：US514476
申请日：1995-08-11
申请人： Thomas H. Baum , Paul B. Comita , Mark S. Crowder , George W. Tyndall, III
发明人： Thomas H. Baum , Paul B. Comita , Mark S. Crowder , George W. Tyndall, III
IPC分类号： G11B5/725 , G11B5/84 , G11B5/00
CPC分类号： G11B5/8408 , G11B5/725 , G11B5/84 , Y10S428/90 , Y10T428/30 , Y10T428/3154
摘要： The present invention relates to a process for coating a magnetic recording device with a lubricating polymeric film using an ion beam generator.
摘要翻译：本发明涉及使用离子束发生器涂覆带有润滑聚合物膜的磁记录装置的方法。

3. 发明授权

US5246745A Laser-induced chemical vapor deposition of thin-film conductors 失效
标题翻译：激光诱导化学气相沉积的薄膜导体
公开(公告)号：US5246745A
公开(公告)日：1993-09-21
申请号：US812686
申请日：1991-12-23
申请人： Thomas H. Baum , Paul B. Comita , John R. Lankard Sr. , Thoams F. Redmond , Thomas A. Wassick , Robert L. Jackson
发明人： Thomas H. Baum , Paul B. Comita , John R. Lankard Sr. , Thoams F. Redmond , Thomas A. Wassick , Robert L. Jackson
IPC分类号： C23C16/04 , H01L21/48 , H01L21/768 , H05K3/22
CPC分类号： H05K3/225 , C23C16/047 , H01L21/485 , H01L21/76894 , H05K2203/107 , H05K2203/1338 , H05K2203/173
摘要： Control of the local environment during pulsed laser removal of thin film circuit metallurgy is used to change the nature of the top surfaces. Interconnecting such laser treated surfaces with LCVD films results in different growth morphologies, dependent on the nature of the surface created and the debris generated during the ablation process. Flowing helium across the surface during the ablation process results in improved growth morphologies for the same laser writing conditions. A low power laser scan is used to induce metal deposition on the substrate without surface damage. This is followed by several scans at an intermediate laser power to deposit the desired thickness of metal (e.g., about 8 .mu.m). Lastly, a high power laser scan is used, either at the points of intersection between the existing metallurgy and the metal repair or across the entire deposit area. Thermal spreading or blooming is reduced by modulating the intensity of the laser source.
摘要翻译：在薄膜电路冶金的脉冲激光去除期间对局部环境的控制被用于改变顶表面的性质。将这种激光处理的表面与LCVD膜相互连接导致不同的生长形态，这取决于所产生的表面的性质和消融过程中产生的碎屑。在消融过程中，流过氦气的表面会导致相同激光写入条件下的生长形态的改善。使用低功率激光扫描来诱导基板上的金属沉积而没有表面损伤。随后在中间激光功率下进行多次扫描以沉积所需厚度的金属（例如，约8μm）。最后，使用大功率激光扫描，无论是在现有冶金和金属修复之间或整个沉积区域的交点处。通过调制激光源的强度来降低散热或开花。

4. 发明授权

US4880959A Process for interconnecting thin-film electrical circuits 失效
标题翻译：互连薄膜电路的工艺
公开(公告)号：US4880959A
公开(公告)日：1989-11-14
申请号：US263103
申请日：1988-10-26
申请人： Thomas H. Baum , Paul B. Comita , Robert L. Jackson
发明人： Thomas H. Baum , Paul B. Comita , Robert L. Jackson
IPC分类号： H05K3/40 , H01L21/70 , H05K3/02 , H05K3/22 , H05K3/46
CPC分类号： H05K3/225 , H01L21/707 , H05K3/467 , H05K2201/0317 , H05K2203/0361 , H05K2203/107 , H05K2203/1338 , H05K2203/173 , H05K3/027
摘要： Thin-film electrical circuits are interconnected by a process comprising the steps of partially ablating the existing thin-film conductor at the connection point(s) by means of a pulsed laser and depositing a thin-film metal interconnection over the desired area, which includes the area(s) of the existing thin-film circuit that were exposed the pulsed laser.

5. 发明授权

US07643146B2 Methods and apparatus for reducing noise in scatterometry measurements 有权
标题翻译：用于降低散射测量中噪声的方法和装置
公开(公告)号：US07643146B2
公开(公告)日：2010-01-05
申请号：US11336388
申请日：2006-01-20
申请人： Evan F. Cromwell , Steven C. Miller , Robert T. Trujillo , Paul B. Comita
发明人： Evan F. Cromwell , Steven C. Miller , Robert T. Trujillo , Paul B. Comita
IPC分类号： G01N21/47
CPC分类号： B01L3/50853 , B01L2200/0684 , B01L2300/0654 , B01L2300/0829 , G01N21/0303 , G01N21/49
摘要： Methods and apparatus for performing scatterometry measurements of biological samples as described herein. A substrate having formed therein one or more sample wells is provided. Each sample well is configured to hold a sample solution containing objects that are to be characterized based on their light scattering properties. One or more sample solutions are dispensed into the sample wells. A specular reflection reducing element is applied to at least some of the sample solutions in the sample wells to decrease reflections of light into one or more detectors. A light beam is directed from a light source onto the objects in the sample wells. Light scattered by the objects in the sample wells is collected and transmitted to one or more detectors. The signal from the detectors is analyzed to detect the one or more characteristics of the one or more samples.
摘要翻译：如本文所述进行生物样品的散射测量的方法和装置。提供了其中形成有一个或多个样品阱的衬底。每个样品孔构造成容纳含有根据其光散射性质进行表征的物体的样品溶液。将一种或多种样品溶液分配到样品孔中。将镜面反射减少元件应用于样品阱中的至少一些样品溶液以减少光反射到一个或多个检测器中。将光束从光源引导到样品孔中的物体上。被样品孔中的物体散射的光被收集并传输到一个或多个检测器。分析来自检测器的信号以检测一个或多个样品的一个或多个特性。

6. 发明授权

US07540920B2 Silicon-containing layer deposition with silicon compounds 有权
标题翻译：含硅层沉积与硅化合物
公开(公告)号：US07540920B2
公开(公告)日：2009-06-02
申请号：US10688797
申请日：2003-10-17
申请人： Kaushal K. Singh , Paul B. Comita , Lance A. Scudder , David K. Carlson
发明人： Kaushal K. Singh , Paul B. Comita , Lance A. Scudder , David K. Carlson
IPC分类号： C30B21/02
CPC分类号： C07F7/0896 , C01B33/04 , C01B33/107 , C07F7/12 , C23C16/24 , C23C16/30
摘要： Embodiments of the invention generally provide a composition of silicon compounds and methods for using the silicon compounds to deposit a silicon-containing film. The processes employ introducing the silicon compound to a substrate surface and depositing a portion of the silicon compound, the silicon motif, as the silicon-containing film. The ligands are another portion of the silicon compound and are liberated as an in-situ etchant. The in-situ etchants supports the growth of selective silicon epitaxy. Silicon compounds include SiRX6, Si2RX6, Si2RX8, wherein X is independently hydrogen or halogen and R is carbon, silicon or germanium. Silicon compound also include compounds comprising three silicon atoms, fourth atom of carbon, silicon or germanium and atoms of hydrogen or halogen with at least one halogen, as well as, comprising four silicon atoms, fifth atom of carbon, silicon or germanium and atoms of hydrogen or halogen with at least one halogen.
摘要翻译：本发明的实施方案通常提供硅化合物的组合物和使用硅化合物沉积含硅膜的方法。该方法采用将硅化合物引入衬底表面，并将一部分硅化合物硅基体作为含硅膜沉积。配体是硅化合物的另一部分，并且被释放为原位蚀刻剂。原位蚀刻剂支持选择性硅外延的生长。硅化合物包括SiRX6，Si2RX6，Si2RX8，其中X独立地是氢或卤素，R是碳，硅或锗。硅化合物还包括包含三个硅原子，第四碳原子，硅或锗的氢原子或卤原子与至少一个卤素的化合物，以及包含四个硅原子，第五个碳原子，硅或锗的化合物和氢或卤素与至少一个卤素。

7. 发明申请

US20080174842A1 Time dependent fluorescence measurements 有权
标题翻译：时间依赖荧光测量
公开(公告)号：US20080174842A1
公开(公告)日：2008-07-24
申请号：US12072047
申请日：2008-02-22
申请人： Evan F. Cromwell , Johann F. Adam , Andrei Brunfeld , Paul B. Comita , Christopher J. Seipert
发明人： Evan F. Cromwell , Johann F. Adam , Andrei Brunfeld , Paul B. Comita , Christopher J. Seipert
IPC分类号： G02B26/08
CPC分类号： G01N21/6452 , G01N21/6408 , G01N21/6445 , G01N21/6458 , G01N2021/6484 , G02B21/0048 , G02B21/0068 , G02B21/0076 , G02B21/16
摘要： Methods and apparatus, including computer program products, implementing and using techniques for collecting optical data pertaining to one or more characteristics of a sample. The apparatus has a light source, one or more illumination optical elements, a scanner, one or more collection optical elements, and a device forming an aperture that limits detection of light from the sample. The illumination optical elements direct a light beam from the light source onto the sample. The scanner scans the light beam across the sample. The collection optical elements collect light from the sample and transmit the collected light to a detector. None of the collection optical elements are included among the illumination optical elements. The device forming an aperture limits detection of light from the sample to light associated with a limited vertical depth within the sample, and is one of the collection optical elements.
摘要翻译：方法和装置，包括计算机程序产品，用于收集与样品的一个或多个特征有关的光学数据的实施和使用技术。该装置具有光源，一个或多个照明光学元件，扫描器，一个或多个收集光学元件，以及形成限制来自样品的光的检测的孔径的装置。照明光学元件将来自光源的光束引导到样品上。扫描仪扫描样品上的光束。收集光学元件收集来自样品的光并将收集的光传输到检测器。在照明光学元件中不包括收集光学元件。形成孔径的装置将从样品的光的检测限制到与样品内的有限垂直深度相关联的光，并且是收集光学元件之一。

8. 发明授权

US06685779B2 Method and a system for sealing an epitaxial silicon layer on a substrate 有权
标题翻译：用于密封衬底上的外延硅层的方法和系统
公开(公告)号：US06685779B2
公开(公告)日：2004-02-03
申请号：US10076250
申请日：2002-02-11
申请人： David K Carlson , Paul B. Comita , Norma B. Riley , Dale R. Du Bois
发明人： David K Carlson , Paul B. Comita , Norma B. Riley , Dale R. Du Bois
IPC分类号： C23C1600
CPC分类号： H01L21/67167 , C01B13/10 , C30B29/06 , C30B33/005 , H01L21/67017 , H01L21/67201 , H01L21/67745 , Y10S414/139
摘要： According to one aspect of the invention, a method of processing a wafer is provided. The wafer is located in a wafer processing chamber of a system for processing a wafer. A silicon layer is then formed on the wafer while the wafer is located in the wafer processing chamber. The wafer is then transferred from the wafer processing chamber to a loadlock chamber of the system. Communication between the processing chamber and the loadlock chamber is closed off. The wafer is then exposed to ozone gas while located in the loadlock chamber, whereafter the wafer is removed from the loadlock chamber out of the system.
摘要翻译：根据本发明的一个方面，提供了一种处理晶片的方法。晶片位于用于处理晶片的系统的晶片处理室中。然后在晶片上形成硅层，同时晶片位于晶片处理室中。然后将晶片从晶片处理室转移到系统的负载锁定室。处理室和负载锁定室之间的通信被关闭。然后将晶片暴露于臭氧气体，同时位于负载锁定室中，此后将晶片从负载锁定室移出系统外。

9. 发明授权

US07576862B2 Measuring time dependent fluorescence 有权
标题翻译：测量时间依赖荧光
公开(公告)号：US07576862B2
公开(公告)日：2009-08-18
申请号：US10928484
申请日：2004-08-26
申请人： Evan F. Cromwell , Johann F. Adam , Andrei Brunfeld , Paul B. Comita , Christopher J. Seipert
发明人： Evan F. Cromwell , Johann F. Adam , Andrei Brunfeld , Paul B. Comita , Christopher J. Seipert
IPC分类号： G01N21/55
CPC分类号： G01N21/6452 , G01N21/6408 , G01N21/6445 , G01N21/6458 , G01N2021/6484 , G02B21/0048 , G02B21/0068 , G02B21/0076 , G02B21/16
摘要： Methods and apparatus, including computer program products, implementing and using techniques for collecting optical data pertaining to one or more characteristics of a sample. A light beam of a first frequency is scanned onto a sample surface using one or more illumination optical elements. Light of a second frequency is collected from a scan line on the sample surface using one or more collection optical elements. None of the one or more collection optical elements are included among the one or more illumination optical elements. The collected light is transmitted to a detector.
摘要翻译：方法和装置，包括计算机程序产品，用于收集与样品的一个或多个特征有关的光学数据的实施和使用技术。使用一个或多个照明光学元件将第一频率的光束扫描到样品表面上。使用一个或多个收集光学元件从样品表面上的扫描线收集第二频率的光。在一个或多个照明光学元件中不包括一个或多个收集光学元件。所收集的光被传送到检测器。

10. 发明授权

US06876442B2 Method of calibrating and using a semiconductor processing system 失效
标题翻译：校准和使用半导体处理系统的方法
公开(公告)号：US06876442B2
公开(公告)日：2005-04-05
申请号：US10078071
申请日：2002-02-13
申请人： Jean R. Vatus , David K. Carlson , Arkadii V. Samoilov , Lance A. Scudder , Paul B. Comita , Annie A. Karpati
发明人： Jean R. Vatus , David K. Carlson , Arkadii V. Samoilov , Lance A. Scudder , Paul B. Comita , Annie A. Karpati
IPC分类号： C23C16/52 , H01L21/205 , H01L21/66 , G01J5/48 , G01R31/26
CPC分类号： H01L22/20
摘要： A method is provided wherein a temperature reading error of a pyrometer is avoided. An upper pyrometer is used to detect infrared radiation from a test layer formed on a test substrate under standard processing conditions. The infrared radiation from the test layer has a period having a length which is indicative of growth rate of the layer. The period is generally inversely proportional to the growth rate. The growth rate is directly related to the temperature.
摘要翻译：提供了避免高温计的温度读数误差的方法。在标准处理条件下，使用上高温计来检测在测试基板上形成的测试层的红外辐射。来自测试层的红外辐射具有指示层的生长速率的长度的周期。这个时期通常与增长率成反比。生长速度与温度直接相关。

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