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    • 10. 发明授权
    • Method of fabricating a microelectronic structure of a semiconductor on insulator type with different patterns
    • 制造具有不同图案的绝缘体半导体微电子结构的方法
    • US07879690B2
    • 2011-02-01
    • US12413130
    • 2009-03-27
    • Emmanuel AugendreThomas ErnstMarek KostrzewaHubert Moriceau
    • Emmanuel AugendreThomas ErnstMarek KostrzewaHubert Moriceau
    • H01L21/30H01L21/46
    • H01L21/76254
    • A microstructure of the semiconductor on insulator type with different patterns is produced by forming a stacked uniform structure including a plate forming a substrate, a continuous insulative layer and a semiconductor layer. The continuous insulative layer is a stack of at least three elementary layers, including a bottom elementary layer, at least one intermediate elementary layer, and a top elementary layer overlying the semiconductor layer, where at least one of the bottom elementary layer and the top elementary layer being of an insulative material. In the stacked uniform structure, at least two patterns are differentiated by modifying at least one of the elementary layers in one of the patterns so that the elementary layer has a significantly different physical or chemical property between the two patterns, where at least one of the bottom and top elementary layer is an insulative material that remains unchanged.
    • 通过形成包括形成衬底的板,连续绝缘层和半导体层的层叠均匀结构,来产生具有不同图案的绝缘体半导体型微结构。 连续绝缘层是至少三个基本层的堆叠,包括底部基本层,至少一个中间基本层和覆盖半导体层的顶部基本层,其中底部基本层和顶部基本层中的至少一个 层是绝缘材料。 在层叠的均匀结构中,通过修改其中一个图案中的至少一个基本层来区分至少两个图案,使得元件层在两个图案之间具有显着不同的物理或化学性质,其中至少一个 底部和顶部基本层是保持不变的绝缘材料。