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1. 发明申请

US20050133846A1 Deep trench capacitor with buried plate electrode and isolation collar 有权
标题翻译：深沟槽电容器，埋置电极和隔离环
公开(公告)号：US20050133846A1
公开(公告)日：2005-06-23
申请号：US10741203
申请日：2003-12-19
申请人： Thomas Dyer , Chun-Yung Sung , Ravikumar Ramachandran , Ramachandra Divakaruni
发明人： Thomas Dyer , Chun-Yung Sung , Ravikumar Ramachandran , Ramachandra Divakaruni
IPC分类号： H01L21/8242 , H01L29/94 , H01L27/108 , H01L31/119
CPC分类号： H01L27/1087 , H01L29/945
摘要： A deep trench capacitor used in a trench DRAM includes a buried plate and an isolation collar. The deep trench is bottle-shaped, and the isolation collar is formed in upper portion of the wider region of the bottle-shaped trench. The buried plate surrounds the lower portion of the wider part of the bottle-shaped trench, and hemispherical grain polysilicon lines the walls of at least the lower portion of the wider part of the trench. A nitride liner layer lines the inner walls of the oxide collar and prevents diffusion of dopant through the oxide collar into the substrate when the HSG polysilicon and the doped buried plate are formed. The buried plate region is self-aligned to the isolation collar. The depth of the top of the wider part of the bottle shape and the bottom depth of the isolation collar are determined by successive resist deposition and recessing steps.
摘要翻译：在沟槽DRAM中使用的深沟槽电容器包括掩埋板和隔离环。深沟是瓶形的，并且隔离套环形成在瓶形沟槽的较宽区域的上部。掩埋板围绕瓶形沟槽的较宽部分的下部，半球状晶粒多晶硅线路至少沟槽较宽部分的下部的壁。当形成HSG多晶硅和掺杂掩埋板时，氮化物衬垫层线化氧化物环的内壁并防止掺杂剂通过氧化物环到衬底中的扩散。掩埋板区域与隔离套环自对准。通过连续的抗蚀剂沉积和凹陷步骤确定瓶子形状的较宽部分的顶部的深度和隔离环的底部深度。

2. 发明申请

US20070141936A1 Dispersible wet wipes with improved dispensing 审中-公开
标题翻译：可分散的湿抹布，具有改进的分配
公开(公告)号：US20070141936A1
公开(公告)日：2007-06-21
申请号：US11300967
申请日：2005-12-15
申请人： William Bunyard , Kelly Branham , Michael Lostocco , Thomas Dyer , Jeffrey Hockersmith , Kevin Possell
发明人： William Bunyard , Kelly Branham , Michael Lostocco , Thomas Dyer , Jeffrey Hockersmith , Kevin Possell
IPC分类号： B32B27/04 , B32B27/12 , B32B5/02
CPC分类号： A61L15/62 , D04H1/587 , D04H1/64 , Y10T442/2508 , Y10T442/2525 , Y10T442/2738 , Y10T442/60
摘要： The present invention provides a wet wipe with improved sheet-to-sheet adhesion properties. The wet wipe comprises a non-woven web saturated with a wetting composition. In another embodiment, the wet wipe comprises a non-woven web with an anti-blocking composition.
摘要翻译：本发明提供具有改进的片对粘合性能的湿巾。湿巾包括用润湿组合物饱和的无纺网。在另一个实施方案中，湿擦巾包括具有防粘连组合物的无纺网。

3. 发明申请

US20060199320A1 METHOD FOR FORMING SELF-ALIGNED, DUAL SILICON NITRIDE LINER FOR CMOS DEVICES 失效
标题翻译：用于形成用于CMOS器件的自对准的双硅氮化物衬底的方法
公开(公告)号：US20060199320A1
公开(公告)日：2006-09-07
申请号：US10906670
申请日：2005-03-01
申请人： Thomas Dyer , Haining Yang
发明人： Thomas Dyer , Haining Yang
IPC分类号： H01L21/8234
CPC分类号： H01L21/823807 , H01L21/823828 , H01L21/823864 , H01L29/7843
摘要： A method for forming a self-aligned, dual silicon nitride liner for CMOS devices includes forming a first type nitride layer over a first polarity type device and a second polarity type device, and forming a topographic layer over the first type nitride layer. Portions of the first type nitride layer and the topographic layer over the second polarity type device are patterned and removed. A second type nitride layer is formed over the second polarity type device, and over remaining portions of the topographic layer over the first polarity type device so as to define a vertical pillar of second type nitride material along a sidewall of the topographic layer, the second type nitride layer in contact with a sidewall of the first type nitride layer. The topographic layer is removed and the vertical pillar is removed.
摘要翻译：用于形成用于CMOS器件的自对准双氮化硅衬垫的方法包括在第一极性类型器件和第二极性器件上形成第一氮化物层，并在第一氮化物层上形成形貌层。第一类型氮化物层和第二极性类型器件上的形貌层的部分被图案化和去除。在第二极性类型器件上形成第二类型氮化物层，并且在第一极性类型器件上方形成地形层的剩余部分，以沿着地形层的侧壁限定第二类型氮化物材料的垂直柱，第二氮化物层与第一氮化物层的侧壁接触。去除地形层并移除垂直柱。

4. 发明申请

US20060144536A1 Soft and durable tissues made with thermoplastic polymer complexes 审中-公开
标题翻译：用热塑性聚合物复合物制成的柔软耐用的纸巾
公开(公告)号：US20060144536A1
公开(公告)日：2006-07-06
申请号：US11027065
申请日：2004-12-30
申请人： Deborah Nickel , Troy Runge , Gil Bernard Garnier , Thomas Dyer
发明人： Deborah Nickel , Troy Runge , Gil Bernard Garnier , Thomas Dyer
IPC分类号： B31F1/12 , D21H17/36
CPC分类号： D21H27/002 , D21H17/35 , D21H17/36 , D21H17/37 , D21H21/24
摘要： A thermoplastic complex comprises an emulsified hydrophobic thermoplastic polymer and a complexing agent. The thermoplastic complex can formed by pre-mixing an emulsified hydrophobic thermoplastic polymer with a complexing agent to form a paste-like complex. The thermoplastic complex can then be dispersed in a water-fiber suspension in the wet-end section of a tissuemaking process. The fibers in the water-fiber suspension retain a substantial amount of the complex. A fibrous web can be formed comprising the treated fibers, which can then be converted into a tissue product that exhibits improved softness with minimized slough.
摘要翻译：热塑性复合物包括乳化的疏水性热塑性聚合物和络合剂。热塑性复合物可以通过将乳化的疏水性热塑性聚合物与络合剂预混合形成糊状复合物而形成。然后将热塑性复合物分散在组织工艺的湿端部分的水纤维悬浮液中。水纤维悬浮液中的纤维保留了大量的复合物。可以形成包含经处理的纤维的纤维网，然后可以将其转化为以最小化的松弛表现出改善的柔软性的组织产品。

5. 发明申请

US20080305621A1 CHANNEL STRAIN ENGINEERING IN FIELD-EFFECT-TRANSISTOR 有权
标题翻译：场效应晶体管中的通道应变工程
公开(公告)号：US20080305621A1
公开(公告)日：2008-12-11
申请号：US11760056
申请日：2007-06-08
申请人： Thomas Dyer , Rajendran Krishnasamy , Jin-Ping Han , Ernst Demm
发明人： Thomas Dyer , Rajendran Krishnasamy , Jin-Ping Han , Ernst Demm
IPC分类号： H01L21/3205
CPC分类号： H01L29/7845 , H01L21/28026 , H01L21/28079 , H01L21/823807 , H01L29/165 , H01L29/49 , H01L29/665 , H01L29/66545 , H01L29/66553 , H01L29/66636 , H01L29/78 , H01L29/7843 , H01L29/7848
摘要： There is disclosed a method of applying stress to a channel region underneath a gate of a field-effect-transistor, which includes the gate, a source region, and a drain region. The method includes steps of embedding stressors in the source and drain regions of the FET; forming a stress liner covering the gate and the source and drain regions; removing a portion of the stress liner, the portion of the stress liner being located on top of the gate of the FET; removing at least a substantial portion of the gate of a first gate material and thus creating an opening therein; and filling the opening with a second gate material.
摘要翻译：公开了一种对包括栅极，源极区和漏极区的场效应晶体管的栅极下面的沟道区域施加应力的方法。该方法包括以下步骤：将应力源嵌入在FET的源极和漏极区域中; 形成覆盖所述栅极和所述源极和漏极区域的应力衬垫; 去除所述应力衬垫的一部分，所述应力衬垫的所述部分位于所述FET的栅极顶部; 去除第一栅极材料的栅极的至少大部分，从而在其中形成开口; 并用第二栅极材料填充开口。

6. 发明授权

US07442614B1 Silicon on insulator devices having body-tied-to-source and methods of making 失效
标题翻译：硅绝缘体器件具有身体束缚源和制造方法
公开(公告)号：US07442614B1
公开(公告)日：2008-10-28
申请号：US12052807
申请日：2008-03-21
申请人： Thomas Dyer , Jack A. Mandelman , Keith Kwong Hon Wong , Chih-Chao Yang , Haining Sam Yang
发明人： Thomas Dyer , Jack A. Mandelman , Keith Kwong Hon Wong , Chih-Chao Yang , Haining Sam Yang
IPC分类号： H01L21/336
CPC分类号： H01L21/26506 , H01L21/2658 , H01L21/26586 , H01L29/665 , H01L29/6659 , H01L29/66772 , H01L29/7835 , H01L29/78618
摘要： Methods of fabricating silicon on insulator devices having the body-tied-to-source are described. In an embodiment, a method of forming a transistor device comprises: providing a semiconductor topography comprising a gate conductor spaced above a semiconductor layer by a gate dielectric, dielectric sidewall spacers adjacent to sidewalls of the gate conductor, and source and drain junctions laterally spaced apart by a body region in the semiconductor layer; and implanting metallic species in a bottom region of the semiconductor layer to form a conductive implant region to electrically connect the source junction to the body region.
摘要翻译：描述了具有身体绑定到源的绝缘体上的硅的制造方法。在一个实施例中，一种形成晶体管器件的方法包括：提供包括通过栅极电介质在半导体层之上间隔开的栅极导体的半导体形貌，与栅极导体的侧壁相邻的电介质侧壁间隔和横向间隔开的源极和漏极结通过半导体层中的体区; 以及将所述金属物质植入所述半导体层的底部区域中以形成导电注入区域，以将所述源极结电连接到所述身体区域。

7. 发明申请

US20080096339A1 CMOS DEVICES WITH HYBRID CHANNEL ORIENTATIONS AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：具有混合通道方向的CMOS器件及其制造方法
公开(公告)号：US20080096339A1
公开(公告)日：2008-04-24
申请号：US11968479
申请日：2008-01-02
申请人： Thomas Dyer , Xiangdong Chen , James Toomey , Haining Yang
发明人： Thomas Dyer , Xiangdong Chen , James Toomey , Haining Yang
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L21/82385 , H01L21/823857
摘要： The present invention relates to a method of fabricating a semiconductor substrate that includes forming at least first and second device regions, wherein the first device region includes a first recess having interior surfaces oriented along a first set of equivalent crystal planes, and wherein the second device region includes a second recess having interior surfaces oriented along a second, different set of equivalent crystal planes. The semiconductor device structure formed using such a semiconductor substrate includes at least one n-channel field effect transistor (n-FET) formed at the first device region having a channel that extends along the interior surfaces of the first recess, and at least one p-channel field effect transistor (p-FET) formed at the second device region having a channel that extends along the interior surfaces of the second recess.
摘要翻译：本发明涉及一种制造半导体衬底的方法，该方法包括形成至少第一和第二器件区域，其中第一器件区域包括具有沿第一组等效晶面取向的内表面的第一凹槽，并且其中第二器件区域包括具有沿着第二不同组的等效晶面取向的内表面的第二凹部。使用这种半导体衬底形成的半导体器件结构包括形成在第一器件区域处的至少一个n沟道场效应晶体管（n-FET），具有沿着第一凹部的内表面延伸的沟道，以及至少一个p - 沟道场效应晶体管（p-FET），其形成在具有沿着第二凹部的内表面延伸的沟道的第二器件区域处。

8. 发明申请

US20080073046A1 Process for increasing the basis weight of sheet materials 有权
标题翻译：增加片材基重的方法
公开(公告)号：US20080073046A1
公开(公告)日：2008-03-27
申请号：US11818513
申请日：2007-06-14
申请人： Thomas Dyer , Deborah Nickel , Kenneth Zwick , Mike Goulet , Jeffrey Timm , Perry Clough
发明人： Thomas Dyer , Deborah Nickel , Kenneth Zwick , Mike Goulet , Jeffrey Timm , Perry Clough
IPC分类号： D21H19/00 , B31F1/12
CPC分类号： A61K8/0208 , A61K8/8111 , A61K8/8147 , A61Q19/00 , D21H17/35 , D21H17/37 , D21H19/20 , D21H19/22 , D21H21/146 , D21H21/18 , D21H21/20 , D21H21/22 , D21H27/001 , D21H27/002 , D21H27/005 , D21H27/008
摘要： Sheet-like products are disclosed containing an additive composition. In accordance with the present disclosure, the additive composition is applied to a creping surface. A base sheet is then pressed against the creping surface for contact with the additive composition. The base sheet is then creped from the creping surface causing the additive composition to transfer to the base sheet. In particular, the additive composition is transferred to the base sheet in amounts greater than about 1% by weight, such as from about 2% to about 50% by weight. The additive composition can comprise, for instance, a thermoplastic polymer resin containing an aqueous dispersion, a lotion, a debonder, a softener, or mixtures thereof.
摘要翻译：公开了含有添加剂组合物的片状产品。根据本公开，将添加剂组合物施加到起皱表面。然后将基片压在起皱表面上以与添加剂组合物接触。然后将基片从起皱表面起皱，使添加剂组合物转移到基片。特别地，添加剂组合物以大于约1重量％，例如约2重量％至约50重量％的量转移到基材片材。添加剂组合物可以包括例如含有水分散体，洗剂，脱粘剂，软化剂或其混合物的热塑性聚合物树脂。

9. 发明申请

US20070295465A1 WIPING PRODUCTS HAVING ENHANCED CLEANING ABILITIES 有权
标题翻译：具有增强清洁能力的清洗产品
公开(公告)号：US20070295465A1
公开(公告)日：2007-12-27
申请号：US11763283
申请日：2007-06-14
申请人： Thomas Dyer , Michael Lostocco , Deborah Nickel , Troy Runge , Kenneth Zwick , Mike Goulet , Jeffrey Timm , Perry Clough , Michael Rekoske
发明人： Thomas Dyer , Michael Lostocco , Deborah Nickel , Troy Runge , Kenneth Zwick , Mike Goulet , Jeffrey Timm , Perry Clough , Michael Rekoske
IPC分类号： B31F1/12 , D21H17/00
CPC分类号： C11D17/041 , A47K10/16 , B32B5/22 , D21H17/37 , D21H19/20 , D21H21/146 , D21H21/18 , D21H27/002
摘要： Wiping products are disclosed containing an additive composition that enhances the cleaning properties of the product. The additive composition, for instance, comprises an aqueous dispersion containing an alpha-olefin polymer, an ethylene-carboxylic acid copolymer, or mixtures thereof. The alpha-olefin polymer may comprise an interpolymer of ethylene and octene, while the ethylene-carboxylic acid copolymer may comprise ethylene-acrylic acid copolymer. The additive composition may also contain a dispersing agent, such as a fatty acid.
摘要翻译：公开了含有增强产品清洁性能的添加剂组合物的擦拭产品。添加剂组合物例如包含含有α-烯烃聚合物，乙烯 - 羧酸共聚物或其混合物的水分散体。 α-烯烃聚合物可以包含乙烯和辛烯的互聚物，而乙烯 - 羧酸共聚物可以包含乙烯 - 丙烯酸共聚物。添加剂组合物还可以含有分散剂，例如脂肪酸。

10. 发明申请

US20070137809A1 Tissue products containing a polymer dispersion 有权
标题翻译：含有聚合物分散体的组织产品
公开(公告)号：US20070137809A1
公开(公告)日：2007-06-21
申请号：US11303036
申请日：2005-12-15
申请人： Thomas Dyer , Michael Lostocco , Deborah Nickel , Troy Runge
发明人： Thomas Dyer , Michael Lostocco , Deborah Nickel , Troy Runge
IPC分类号： B31F1/12 , D21H17/34
CPC分类号： D21H27/002 , D21H17/35 , D21H17/37 , D21H21/18 , D21H23/50
摘要： Tissue products are disclosed containing an additive composition. The additive composition, for instance, comprises an aqueous dispersion containing an olefin polymer, an ethylene-carboxylic acid copolymer, or mixtures thereof. The olefin polymer may comprise an interpolymer of ethylene and octene, while the ethylene-carboxylic acid copolymer may comprise ethylene-acrylic acid copolymer. The additive composition may also contain a dispersing agent, such as a fatty acid. The additive composition may be incorporated into the tissue web by being combined with the fibers that are used to form the web. Alternatively, the additive composition may be topically applied to the web after the web has been formed. For instance, in one embodiment, the additive composition may be applied to the web as a creping adhesive during a creping operation. The additive composition may improve the strength of the tissue web without substantially affecting the perceived softness of the web in an adverse manner.
摘要翻译：公开了含有添加剂组合物的组织产品。添加剂组合物例如包含含有烯烃聚合物，乙烯 - 羧酸共聚物或其混合物的水分散体。烯烃聚合物可以包含乙烯和辛烯的互聚物，而乙烯 - 羧酸共聚物可以包含乙烯 - 丙烯酸共聚物。添加剂组合物还可以含有分散剂，例如脂肪酸。添加剂组合物可以通过与用于形成纤维网的纤维组合而结合到组织纤维网中。或者，添加剂组合物可以在幅材已经形成之后局部施加到幅材上。例如，在一个实施方案中，添加剂组合物可以在起皱操作期间作为起皱粘合剂施加到幅材上。添加剂组合物可以改善组织织物的强度，而不会以不利的方式基本上影响纤维网的感觉到的柔软度。

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