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    • 9. 发明申请
    • Lateral Programmable Polysilicon Structure Incorporating Polysilicon Blocking Diode
    • 结合多晶硅阻挡二极管的横向可编程多晶硅结构
    • US20060208287A1
    • 2006-09-21
    • US11419558
    • 2006-05-22
    • Robert LutzThomas Wong
    • Robert LutzThomas Wong
    • H01L29/76
    • H01L21/84G11C17/16H01L27/11801H01L27/1203H01L29/868Y10S257/91
    • A programmable element includes a diode and a programmable structure formed in a polysilicon layer isolated from a semiconductor substrate by a dielectric layer. The diode includes a first region and a second region of opposite conductivity types. The programmable structure includes a third region and a fourth region of opposite conductivity types. The first region of the diode and the third region of the programmable structure are electrically connected. In operation, the programmable structure is programmed to a low impedance state when a voltage exceeding a first breakdown voltage of the programmable structure is applied to reverse bias the programmable structure. The programmable element can be used to form a programmable array having very low parasitic capacitance, enabling the realization of a large and ultra fast programmable logic array.
    • 可编程元件包括形成在通过电介质层与半导体衬底隔离的多晶硅层中的二极管和可编程结构。 二极管包括第一区域和相反导电类型的第二区域。 可编程结构包括具有相反导电类型的第三区域和第四区域。 二极管的第一区域和可编程结构的第三区域电连接。 在操作中,当施加超过可编程结构的第一击穿电压的电压以将可编程结构反向偏置时,可编程结构被编程为低阻抗状态。 可编程元件可用于形成具有非常低的寄生电容的可编程阵列,使得能够实现大型和超快速可编程逻辑阵列。