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    • 2. 发明授权
    • Integrated semiconductor memory with redundant units for memory cells
    • 具有用于存储器单元的冗余单元的集成半导体存储器
    • US06353562B2
    • 2002-03-05
    • US09780326
    • 2001-02-09
    • Thomas BöhmHeinz HönigschmidStefan LammersZoltan Manyoki
    • Thomas BöhmHeinz HönigschmidStefan LammersZoltan Manyoki
    • G11C700
    • G11C29/24G11C29/787
    • An integrated semiconductor memory has memory cells that are combined to form addressable normal units and to form at least one redundant unit for replacing one of the normal units. In addition, the semiconductor memory has an address bus to which an address can be applied, and a redundancy circuit that is connected to the address bus. The redundancy circuit is used to select the redundant unit. An input of a processing unit is connected to a connection of the address bus and also to a connection for a test signal, and the output of the processing unit is connected to an input of the redundancy circuit. The redundant unit can be tested before the repair information is programmed in the redundancy circuit. The circuit complexity required for this is comparatively low.
    • 集成半导体存储器具有被组合以形成可寻址的正常单元并且形成至少一个用于替换正常单元之一的冗余单元的存储单元。 此外,半导体存储器具有可以应用地址的地址总线,以及连接到地址总线的冗余电路。 冗余电路用于选择冗余单元。 处理单元的输入连接到地址总线的连接,也连接到用于测试信号的连接,并且处理单元的输出连接到冗余电路的输入。 在冗余电路中编写修复信息之前,可以对冗余单元进行测试。 所需的电路复杂度相对较低。
    • 10. 发明授权
    • Integrated memory with memory cell array
    • 集成存储器与存储单元阵列
    • US06657916B2
    • 2003-12-02
    • US10054195
    • 2002-01-22
    • Heinz HönigschmidStefan LammersHelmut Kandolf
    • Heinz HönigschmidStefan LammersHelmut Kandolf
    • G11C800
    • G11C8/00G11C8/08
    • An integrated memory has a memory cell array with memory cells which are connected to word lines and bit lines. For the purpose of reading from or writing to one of the memory cells, a first word line can be connected to a supply circuit via a controllable first switching device and a second word line can be connected to the supply circuit via a controllable second switching device. A control circuit can drive the first switching device in dependence of an activation state of the second word line and the second switching device in dependence of an activation state of the first word line. Consequently, existing word lines that are not currently being used can be used for addressing one of the memory cells. As a result, only one wiring plane is required for the word lines.
    • 集成存储器具有存储单元阵列,其存储单元连接到字线和位线。 为了从一个存储单元读取或写入存储单元,第一字线可以通过可控的第一开关器件连接到电源电路,并且第二字线可以经由可控的第二开关器件连接到电源电路 。 根据第一字线的激活状态,控制电路可以根据第二字线和第二开关器件的激活状态来驱动第一开关器件。 因此,当前未使用的现有字线可用于寻址存储单元之一。 结果,字线只需要一个接线面。