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1. 发明申请

US20060002183A1 Magnetic memory with structure providing reduced coercivity 有权
标题翻译：结构提供降低矫顽力的磁记忆体
公开(公告)号：US20060002183A1
公开(公告)日：2006-01-05
申请号：US11222623
申请日：2005-09-09
申请人： Thomas Anthony , Manoj Bhattacharyya , Darrel Bloomquist , Judy Bloomquist
发明人： Thomas Anthony , Manoj Bhattacharyya , Darrel Bloomquist , Judy Bloomquist
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： Embodiments of the present invention provide a magnetic memory. In one embodiment, the magnetic memory comprises a magnetic memory cell and a conductor configured to provide a magnetic field to write the magnetic memory cell. Structure is configured to direct the magnetic field and reduce coercivity of the magnetic memory cell.
摘要翻译：本发明的实施例提供一种磁存储器。在一个实施例中，磁存储器包括磁存储单元和配置成提供磁场以写入磁存储单元的导体。结构被配置为引导磁场并降低磁存储单元的矫顽力。

2. 发明申请

US20050111254A1 Magnetic memory device and methods for making same 有权
公开(公告)号：US20050111254A1
公开(公告)日：2005-05-26
申请号：US11021268
申请日：2004-12-23
申请人： Thomas Anthony , Darrel Bloomquist , Manoj Bhattacharyya , Judy Bloomquist
发明人： Thomas Anthony , Darrel Bloomquist , Manoj Bhattacharyya , Judy Bloomquist
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L43/08 , G11C11/00
CPC分类号： G11C11/15
摘要： In one embodiment, a memory device includes a plurality of magnetic data cells and a magnetic reference cell extending uninterrupted along more than one of the plurality of data cells.

3. 发明授权

US06564742B2 Over-temperature warning device 有权
标题翻译：超温报警装置
公开(公告)号：US06564742B2
公开(公告)日：2003-05-20
申请号：US09921145
申请日：2001-08-03
申请人： Frederick A Perner , Thomas Anthony , Manoj Bhattacharyya
发明人： Frederick A Perner , Thomas Anthony , Manoj Bhattacharyya
IPC分类号： G01K1106
CPC分类号： G01K11/06
摘要： A critical temperature warning apparatus and method to monitor the thermal history of a product such as a memory card. The apparatus comprises a critical temperature indicator, which is externally attached to a product to be monitored. The indicator indicates if the product has experienced a critical temperature. The critical temperature indicator may comprise a patterned array of wax, the wax having a melting point equal to the critical temperature. If the pattern of wax has been destroyed leaving a molten wax residue, then this indicates that the product has experienced a critical temperature. The critical temperature indicator may also include thermographic inks for indicating that a critical temperature has been experienced.
摘要翻译：一种用于监测诸如存储卡的产品的热历史的临界温度警告装置和方法。该装置包括临时温度指示器，其外部附接到要监视的产品。该指示器指示产品是否经历了临界温度。临界温度指示器可以包括蜡的图案化阵列，蜡的熔点等于临界温度。如果蜡的图案被破坏，留下熔融的蜡残留物，则表明该产品已经经历了临界温度。临界温度指示器还可以包括用于指示经历了临界温度的热成像油墨。

4. 发明授权

US06236590B1 Optimal write conductors layout for improved performance in MRAM 有权
标题翻译：最佳写导体布局，以提高MRAM的性能
公开(公告)号：US06236590B1
公开(公告)日：2001-05-22
申请号：US09624134
申请日：2000-07-21
申请人： Manoj Bhattacharyya , Thomas Anthony
发明人： Manoj Bhattacharyya , Thomas Anthony
IPC分类号： G11C1115
CPC分类号： G11C11/16 , G11C11/15 , H01L27/222
摘要： An optimal write conductor layout structure for improved MRAM performance is disclosed. A write conductor layout structure for a magnetic memory cell includes a data storage layer having a first layer width in a first direction and a second layer width in a second direction. The data storage layer is positioned between a first conductor having a first width in the first direction and a second conductor having a second width in the second direction. The first and second conductors cross the data storage layer in the first and second directions respectively. The first width of the first conductor is less than the first layer width of the data storage layer and the first width of the first conductor is positioned so that the first layer width overlaps the entirety of the first width of the first conductor. The second width of the second conductor is less than the second layer width of the data storage layer and the second width of the second conductor is positioned so that the second layer width overlaps the entirety of the second width of the second conductor. The narrow widths of the first and second conductors eliminates misalignment between the conductors and the data storage layer, reduces leakage of a write magnetic field generated by currents applied to the first and second conductors, and can generate the write magnetic field with less current thereby reducing power consumption in the memory cell.
摘要翻译：公开了一种用于改进MRAM性能的最佳写导体布局结构。用于磁存储单元的写导体布局结构包括在第一方向具有第一层宽度和在第二方向上具有第二层宽度的数据存储层。数据存储层位于第一方向具有第一宽度的第一导体和第二方向上具有第二宽度的第二导体之间。第一和第二导体分别在第一和第二方向上与数据存储层交叉。第一导体的第一宽度小于数据存储层的第一层宽度，并且第一导体的第一宽度被定位成使得第一层宽度与第一导体的整个第一宽度重叠。第二导体的第二宽度小于数据存储层的第二层宽度，并且第二导体的第二宽度被定位成使得第二层宽度与第二导体的整个第二宽度重叠。第一和第二导体的窄宽度消除了导体和数据存储层之间的不对准，减少了由施加到第一和第二导体的电流产生的写磁场的泄漏，并且可以以较小的电流产生写入磁场，从而减少存储单元中的功耗。

5. 发明申请

US20060017126A1 Thermally written magnetic memory device 有权
标题翻译：热写磁存储器件
公开(公告)号：US20060017126A1
公开(公告)日：2006-01-26
申请号：US10898279
申请日：2004-07-23
申请人： Manoj Bhattacharyya , Thomas Anthony
发明人： Manoj Bhattacharyya , Thomas Anthony
IPC分类号： H01L43/00
CPC分类号： H01L27/222 , G11C11/16 , G11C11/1675
摘要： A thermally written magnetic memory device is disclosed. The thermally written magnetic memory device includes a plurality of thermally written magnetic tunnel junction devices. Each thermally written magnetic tunnel junction device includes a super-paramagnetically stable data layer. The data layer includes a high coercivity at a read temperature such that a bit of data previously written to the data layer at a higher write temperature can be read from the data layer at the read temperature. The data layer has a low coercivity at the higher write temperature and data is written to the data layer at the higher write temperature. Therefore, at the lower read temperature, the thermally written magnetic memory device is a read only non-volatile memory and the data stored therein can be read many times but new data cannot be written to the data layer at the read temperature.
摘要翻译：公开了一种热写磁存储器件。热写磁存储器件包括多个热写磁力隧道结器件。每个热写磁隧道结器件包括一个超顺磁性稳定的数据层。数据层在读取温度下包括高矫顽力，使得可以在读取温度下从数据层读取先前写入数据层的写入温度较高的数据位。数据层在写入温度较高时具有较低的矫顽力，并且数据在写入温度较高时被写入数据层。因此，在较低的读取温度下，热写磁存储器件是只读非易失性存储器，并且其中存储的数据可以被读取多次，但是在读取温度下不能将新数据写入数据层。

6. 发明申请

US20050101035A1 Method for constructing a magneto-resistive element 审中-公开
标题翻译：用于构造磁阻元件的方法
公开(公告)号：US20050101035A1
公开(公告)日：2005-05-12
申请号：US10846101
申请日：2004-11-10
申请人： Janice Nickel , Thomas Anthony , Manish Sharma , Manoj Bhattacharyya
发明人： Janice Nickel , Thomas Anthony , Manish Sharma , Manoj Bhattacharyya
IPC分类号： H01L21/00 , H01L43/12
CPC分类号： H01L43/12
摘要： A magneto-resistive element is constructed. A ferromagnetic sense layer is deposited on a surface. The ferromagnetic sense layer is patterned. An etch is performed in preparation for depositing a dielectric layer. The dielectric layer is deposited over the sense layer. A ferromagnetic pinned layer is deposited over the dielectric layer.
摘要翻译：构造了一个磁阻元件。铁磁感应层沉积在表面上。铁磁感应层被图案化。进行蚀刻以准备沉积介电层。介电层沉积在感应层上。在电介质层上沉积铁磁钉扎层。

7. 发明授权

US06756239B1 Method for constructing a magneto-resistive element 有权
标题翻译：用于构造磁阻元件的方法
公开(公告)号：US06756239B1
公开(公告)日：2004-06-29
申请号：US10414325
申请日：2003-04-15
申请人： Janice H. Nickel , Thomas Anthony , Manish Sharma , Manoj Bhattacharyya
发明人： Janice H. Nickel , Thomas Anthony , Manish Sharma , Manoj Bhattacharyya
IPC分类号： H01L2100
CPC分类号： H01L43/12
摘要： A magneto-resistive element is constructed. A ferromagnetic sense layer is deposited on a surface. The ferromagnetic sense layer is patterned. An etch is performed in preparation for depositing a dielectric layer. The dielectric layer is deposited over the sense layer. A ferromagnetic pinned layer is deposited over the dielectric layer.
摘要翻译：构造了一个磁阻元件。铁磁感应层沉积在表面上。铁磁感应层被图案化。进行蚀刻以准备沉积介电层。介电层沉积在感应层上。在电介质层上沉积铁磁钉扎层。

8. 发明申请

US20050195649A1 Multi-bit MRAM device with switching nucleation sites 有权
标题翻译：具有开关成核位置的多位MRAM器件
公开(公告)号：US20050195649A1
公开(公告)日：2005-09-08
申请号：US11112815
申请日：2005-04-21
申请人： Janice Nickel , Manoj Bhattacharyya
发明人： Janice Nickel , Manoj Bhattacharyya
IPC分类号： G11C11/15 , G11C11/16 , G11C11/56 , G11C11/00
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , G11C2211/5615 , G11C2211/5616
摘要： A magnetic memory cell includes a first magneto-resistive device and a second magneto-resistive device. The first magneto-resistive device has a first sense layer. The second magneto-resistive device is connected in series with the first magneto-resistive device. The second magneto-resistive device has a second sense layer. At least one controlled nucleation site is placed on at least one of the first sense layer and the second sense layer.
摘要翻译：磁存储单元包括第一磁阻装置和第二磁阻装置。第一磁阻装置具有第一感测层。第二磁阻装置与第一磁阻装置串联连接。第二磁阻装置具有第二感测层。至少一个控制的成核位置放置在第一感测层和第二感测层中的至少一个上。

9. 发明授权

US06919594B2 Magneto resistive storage device having a magnetic field sink layer 有权
标题翻译：具有磁场吸收层的磁阻存储装置
公开(公告)号：US06919594B2
公开(公告)日：2005-07-19
申请号：US10696991
申请日：2003-10-30
申请人： Manish Sharma , Thomas C. Anthony , Manoj Bhattacharyya
发明人： Manish Sharma , Thomas C. Anthony , Manoj Bhattacharyya
IPC分类号： H01L27/105 , G11C11/16 , H01L21/8246 , H01L43/08 , H01L29/76
CPC分类号： G11C11/16 , G11C11/161
摘要： An electro-magnetic device, such as magnetic memory device, is disclosed that includes means for structuring, attenuating or eliminating stray fields at the boundaries that produce an offset in the magneto-resistive response. The device comprises a conductive first layer and the attenuating means comprises a sink layer, electro-magnetically coupled to the first layer, to attenuate the stray boundary magneto-resistive offset at a boundary of the first layer during electrical operation.
摘要翻译：公开了一种诸如磁存储器件的电磁器件，其包括用于在产生磁阻响应中的偏移的边界处构造，衰减或消除杂散场的装置。该装置包括导电第一层，并且衰减装置包括电磁耦合到第一层的吸收层，以在电操作期间衰减第一层边界处的杂散边界磁阻偏移。

10. 发明申请

US20050104146A1 THIN FILM DEVICE AND A METHOD OF PROVIDING THERMAL ASSISTANCE THEREIN 有权
标题翻译：薄膜装置及其提供热辅助的方法
公开(公告)号：US20050104146A1
公开(公告)日：2005-05-19
申请号：US10713510
申请日：2003-11-14
申请人： Janice Nickel , Manoj Bhattacharyya , Frederick Perner
发明人： Janice Nickel , Manoj Bhattacharyya , Frederick Perner
IPC分类号： H01L27/105 , G11C11/14 , G11C11/16 , H01L21/8229 , H01L21/8246 , H01L27/22 , H01L29/76 , H01L29/82 , H01L43/00 , H01L43/08
CPC分类号： H01L27/222 , G11C11/16 , G11C11/1675 , H01L43/08
摘要： A thin film device and a method of providing thermal assistance therein is disclosed. Accordingly, a heater material is utilized to thermally assist in the operation of the thin film device. By utilizing a heater material to thermally assist in the operation of the thin film device, a substantial improvement in the accuracy and performance of the thin film device is achieved. A first aspect of the present invention is a thin film device. The thin film device includes at least one patterned thin film layer, a heater material coupled to the at least one patterned thin film layer for providing thermal assistance to the at least one of the patterned thin film layers and a conductor coupled to the heater material for supplying energy to the heater material.
摘要翻译：公开了薄膜装置及其中提供热辅助的方法。因此，使用加热器材料来热辅助薄膜器件的操作。通过利用加热材料热辅助薄膜器件的操作，实现了薄膜器件的精度和性能的显着提高。本发明的第一方面是一种薄膜器件。所述薄膜器件包括至少一个图案化薄膜层，耦合到所述至少一个图案化薄膜层的加热器材料，用于向所述图案化薄膜层中的至少一个提供热辅助，以及耦合到所述加热器材料的导体，向加热器材料供应能量。

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