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    • 8. 发明申请
    • Highly sensitive, fast pixel for use in an image sensor
    • 用于图像传感器的高灵敏度,快速像素
    • US20070034779A1
    • 2007-02-15
    • US11503524
    • 2006-08-11
    • Thierry OggierMichael LehmannBernhard Buttgen
    • Thierry OggierMichael LehmannBernhard Buttgen
    • H01L27/00
    • H01L31/02024G01J3/2803H01L27/14603
    • The pixel (1) for use in an image sensor comprises a plurality of small-sized radiation-sensitive elements (2.1-2.9) for converting incident radiation into electric signals, the radiation-sensitive elements (2.1-2.9) being properly interconnected to form a larger radiation-sensitive area. The pixel (1) further comprises a plurality of storage elements (3A-3D) for storing the electric signals. The pixel further comprises transfer means for transferring the electric signals from the radiation-sensitive elements (2.1-2.9) to any selected one of the storage elements (3A-3D). The pixel (1) exhibits a high optical sensitivity and a high demodulation speed, and is especially suited for distance-measuring sensors based on the time-of-flight (TOF) principle or interferometry.
    • 用于图像传感器的像素(1)包括用于将入射辐射转换成电信号的多个小尺寸的辐射敏感元件(2.1-2.9),所述辐射敏感元件(2.1-2.9)被正确互连以形成 更大的辐射敏感区域。 像素(1)还包括用于存储电信号的多个存储元件(3A-3D)。 像素还包括用于将来自辐射敏感元件(2.1-2.9)的电信号传送到存储元件(3A-3D)中的任何选定的一个的传送装置。 像素(1)具有高的光学灵敏度和高的解调速度,并且特别适用于基于飞行时间(TOF)原理或干涉测量的距离测量传感器。
    • 10. 发明申请
    • On-chip time-based digital conversion of pixel outputs
    • 片上基于时间的数字转换像素输出
    • US20090021617A1
    • 2009-01-22
    • US12175091
    • 2008-07-17
    • Thierry OggierMichael LehmannBernhard Buettgen
    • Thierry OggierMichael LehmannBernhard Buettgen
    • H04N5/335
    • G01S17/89
    • An integrated sensor chip comprises at least one pixel. The at least one pixel comprises: one or several integration regions for receiving and storing photogenerated charges; a modulation region that moves the photogenerated charges to be stored in the at least two integration regions; and sense nodes, in which each of the sense nodes is associated with one of the integration regions, into which the photogenerated charges are moved from the integration regions during a readout stage. The chip comprises: at least one function generator for generating a time-varying function that is applied to the integration regions during the readout cycle to move the photogenerated changes to the sense nodes; a counter generates a count during the generation of the time-varying function; and registers, in which each of the registers is associated with one of the sense nodes during read out, for storing digital values; wherein the registers store the count in response to the associated sense node receiving photogenerated charges from the associated integration regions.
    • 集成传感器芯片包括至少一个像素。 所述至少一个像素包括:用于接收和存储光生电荷的一个或几个积分区域; 调制区域,其移动要存储在所述至少两个积分区域中的光生电荷; 以及感测节点,其中每个感测节点与所述积分区域之一相关联,所述积分区域在读出阶段期间从所述积分区域移动所述光生电荷。 该芯片包括:至少一个功能发生器,用于产生在读出周期期间应用于积分区域的时变功能,以将光生变化移动到感测节点; 在产生时变功能期间,计数器产生计数; 和寄存器,其中每个寄存器在读出期间与感测节点之一相关联,用于存储数字值; 其中所述寄存器响应于所述相关联的感测节点从相关联的积分区域接收光生电荷而存储所述计数。